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    • 53. 发明申请
    • SEMICONDUCTOR AVALANCHE PHOTODETECTOR WITH VACUUM OR GASEOUS GAP ELECTRON ACCELERATION REGION
    • 具有真空或气体间隙电子加速区的半导体雪崩光电检测器
    • WO2005017973A2
    • 2005-02-24
    • PCT/US2004/026862
    • 2004-08-17
    • NANOSOURCE, INC.LIPSON, Jan
    • LIPSON, Jan
    • H01L
    • B82Y10/00H01L31/0352H01L31/107
    • A semiconductor avalanche photodiode (APD) with very high current gain utilizes a small vacuum or gas filled gap, which is used as a region to accelerate electrons to high energies. The APD has an absorption layer, a gap, and a multiplication layer. The absorption layer is adapted to generate electron-hole pairs upon absorbing light. The APD is adapted to generate an electric field in the gap and at an interface between the absorption layer and the gap. The electric field extracts electrons from the absorption layer into the gap and accelerates the extracted electrons while in the gap. The multiplication layer is adapted so that said accelerated electrons impinge on and cause a flow of secondary electrons within the multiplication layer.
    • 具有非常高电流增益的半导体雪崩光电二极管(APD)利用小的真空或气体填充间隙,其被用作将电子加速到高能量的区域。 APD具有吸收层,间隙和倍增层。 吸收层适于在吸收光时产生电子 - 空穴对。 APD适于在间隙中和吸收层和间隙之间的界面处产生电场。 电场将电子从吸收层提取到间隙中,并在间隙中加速提取的电子。 倍增层被适配为使得所述加速电子撞击并导致倍增层内的二次电子流动。