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41. 发明申请

WO2007149487A3 OPTO-ELECTRONIC AND ELECTRONIC DEVICES USING N-FACE OR M-PLANE GAN SUBSTRATE PREPARED WITH AMMONOTHERMAL GROWTH 审中-公开
标题翻译：利用氨热法生长制备的N面或M面GAN衬底的光电和电子器件
公开(公告)号：WO2007149487A3
公开(公告)日：2008-11-13
申请号：PCT/US2007014383
申请日：2007-06-20
申请人： UNIV CALIFORNIA , JAPAN SCIENCE & TECH AGENCY , HASHIMOTO TADAO , SATO HITOSHI , NAKAMURA SHUJI
发明人： HASHIMOTO TADAO , SATO HITOSHI , NAKAMURA SHUJI
IPC分类号： H01L29/04 , H01L33/16
CPC分类号： H01L29/045 , C30B7/10 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L29/2003 , H01L33/16 , Y10S438/973 , Y10T117/1064
摘要： A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane 3Gallium Nitride films and bulk GaN.
摘要翻译：一种使用氨热生长技术生长具有N面或M面的III-V氮化物膜的方法。该方法包括使用高压釜，加热高压釜，并将氨引入高压釜以产生光滑的N面或M面3G氮化镓膜和块状GaN。

42. 发明申请

WO2007149487A8 OPTO-ELECTRONIC AND ELECTRONIC DEVICES USING N-FACE OR M-PLANE GAN SUBSTRATE PREPARED WITH AMMONOTHERMAL GROWTH 审中-公开
标题翻译：光电子和电子设备使用N面或M-平面甘油底物制备与热成长
公开(公告)号：WO2007149487A8
公开(公告)日：2008-05-29
申请号：PCT/US2007014383
申请日：2007-06-20
申请人： UNIV CALIFORNIA , JAPAN SCIENCE & TECH AGENCY , HASHIMOTO TADAO , SATO HITOSHI , NAKAMURA SHUJI
发明人： HASHIMOTO TADAO , SATO HITOSHI , NAKAMURA SHUJI
IPC分类号： C30B23/06 , H01L29/04 , H01L33/16
CPC分类号： H01L29/045 , C30B7/10 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L29/2003 , H01L33/16 , Y10S438/973 , Y10T117/1064
摘要： A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane 3Gallium Nitride films and bulk GaN.
摘要翻译：使用氨热生长技术生长具有N面或M面的III-V族氮化物膜的方法。该方法包括使用高压釜，加热高压釜，并将氨引入高压釜中以产生平滑的N面或M面氮化镓镓膜和体GaN。

43. 发明申请

WO2007056354A2 HIGH LIGHT EXTRACTION EFFICIENCY LIGHT EMITTING DIODE (LED) 审中-公开
标题翻译：高光提取效率发光二极管（LED）
公开(公告)号：WO2007056354A2
公开(公告)日：2007-05-18
申请号：PCT/US2006043317
申请日：2006-11-06
申请人： DENBAARS STEVEN P , NAKAMURA SHUJI , MASUI HISASHI , FELLOWS NATALIE N , MURAI AKIHIKO
发明人： DENBAARS STEVEN P , NAKAMURA SHUJI , MASUI HISASHI , FELLOWS NATALIE N , MURAI AKIHIKO
IPC分类号： H01L33/00 , H01L33/20 , H01L33/26 , H01L33/58 , H01L33/60
CPC分类号： H01L33/58 , H01L33/007 , H01L33/20 , H01L33/26 , H01L33/60
摘要： Ail (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED) combined with a shaped plastic optical element, in which the directional light from the ZnO cone, or from any high refractive index material in contact with the LED surface, entering the shaped plastic optical element is extracted to air.
摘要翻译： Ail（Al，Ga，In）N和ZnO直接晶片键合发光二极管（LED）结合成形塑料光学元件，其中来自ZnO锥体的定向光或来自与LED接触的任何高折射率材料表面，进入成形的塑料光学元件被提取到空气中。

44. 发明申请

WO2007065005A3 IMPROVED HORIZONTAL EMITTING, VERTICAL EMITTING, BEAM SHAPED, DISTRIBUTED FEEDBACK (DFB) LASERS FABRICATED BY GROWTH OVER A PATTERNED SUBSTRATE WITH MULTIPLE OVERGROWTH 审中-公开
标题翻译：改进的水平发射，垂直发射，光束形状，分布式反馈（DFB）激光通过具有多重扩展的图形基板生长而形成
公开(公告)号：WO2007065005A3
公开(公告)日：2009-04-23
申请号：PCT/US2006046257
申请日：2006-12-04
申请人： UNIV CALIFORNIA , WEISBUCH CLAUDE C A , NAKAMURA SHUJI
发明人： WEISBUCH CLAUDE C A , NAKAMURA SHUJI
IPC分类号： H01L29/06
CPC分类号： H01S5/34333 , B82Y20/00 , G02B6/1225 , H01L21/02647 , H01L33/007 , H01S5/105 , H01S5/12 , H01S5/1206 , H01S5/1215 , H01S5/1225 , H01S5/1231 , H01S5/18 , H01S5/187 , H01S5/20 , H01S5/2004 , H01S2304/12
摘要： A structure using integrated optical elements is comprised of a substrate, a buffer layer grown on the substrate, one or more first patterned layers deposited on top of the buffer layer, wherein each of the first patterned layers is comprised of a bottom lateral epitaxial overgrowth (LEO) mask layer and a LEO nitride layer filling holes in the bottom LEO mask layer, one or more active layers formed on the first patterned layers, and one or more second patterned layers deposited on top of the active layer, wherein each of the second patterned layers is comprised of a top LEO mask layer and a LEO nitride layer filling holes in the top LEO mask layer, wherein the top and/or bottom LEO mask layers act as a mirror, optical confinement layer, grating, wavelength selective element, beam shaping element or beam directing element for the active layers.
摘要翻译：使用集成光学元件的结构包括衬底，在衬底上生长的缓冲层，沉积在缓冲层顶部上的一个或多个第一图案化层，其中每个第一图案化层由底部侧向外延生长（ LEO）掩模层和LEO氮化物层填充底部LEO掩模层中的孔，形成在第一图案化层上的一个或多个有源层和沉积在有源层顶部上的一个或多个第二图案化层，其中第二个图案化层由顶部LEO掩模层和顶部LEO掩模层中的LEO氮化物层填充孔组成，其中顶部和/或底部LEO掩模层用作反射镜，光限制层，光栅，波长选择元件，光束用于有源层的成形元件或光束引导元件。

45. 发明申请

WO2007133766A2 ELECTRICALLY-PUMPED (GA,IN, AI) N VERTICAL-CAVITY SURFACE-EMITTING LASER 审中-公开
标题翻译：电动泵（GA，IN，AI）N垂直表面发射激光
公开(公告)号：WO2007133766A2
公开(公告)日：2007-11-22
申请号：PCT/US2007011614
申请日：2007-05-15
申请人： UNIV CALIFORNIA , FEEZELL DANIEL F , COHEN DANIEL A , FARRELL ROBERT M , ISHIDA MASAHIRO , NAKAMURA SHUJI
发明人： FEEZELL DANIEL F , COHEN DANIEL A , FARRELL ROBERT M , ISHIDA MASAHIRO , NAKAMURA SHUJI
IPC分类号： A61K9/127 , A61K31/70
CPC分类号： H01S5/18341 , H01S5/0207 , H01S5/0421 , H01S5/0425 , H01S5/18308 , H01S5/18388 , H01S5/32341
摘要： A vertical-cavity surface-emitting laser (VCSEL) comprising a low-loss thin metal contact and current spreading layer within the optical cavity that provides for improved ohmic contact and lateral current distribution, a substrate including a plano concave optical cavity, a (Ga5In5Al)N multiple quantum well (MQW) active region contained within the optical cavity that generates light when injected by an electrical current, and an integrated micromirror fabricated onto the substrate that provides for optical mode control of the light generated by the active region. A relatively simple process is used to fabricate the VCSEL.
摘要翻译：一种垂直腔表面发射激光器（VCSEL），其包括光腔内的低损耗薄金属接触和电流扩散层，其提供改善的欧姆接触和横向电流分布;衬底，包括平凹光学腔，（Ga5In5Al ）N多量子阱（MQW）有源区，其包含在通过电流注入时产生光的光学腔内;以及集成微镜，其制造在衬底上，用于对由有源区产生的光进行光学模式控制。使用相对简单的过程来制造VCSEL。

46. 发明申请

WO2008057454A8 GROWTH AND MANUFACTURE OF REDUCED DISLOCATION DENSITY AND FREE-STANDING ALUMINUM NITRIDE FILMS BY HYDRIDE VAPOR PHASE EPITAXY 审中-公开
标题翻译：氢化物气相外延生长和制备降低位错密度和氮化亚铁薄膜的研究
公开(公告)号：WO2008057454A8
公开(公告)日：2008-09-25
申请号：PCT/US2007023209
申请日：2007-11-02
申请人： UNIV CALIFORNIA , JAPAN SCIENCE & TECH AGENCY , KAMBER DERRICK S , NAKAMURA SHUJI , SPECK JAMES S
发明人： KAMBER DERRICK S , NAKAMURA SHUJI , SPECK JAMES S
IPC分类号： C01B21/072 , H01L21/20
CPC分类号： C30B29/403 , C30B25/183 , H01L21/0237 , H01L21/0254 , H01L21/02639 , H01L21/0265
摘要： A Group Ill-nitride semiconductor film containing aluminum, and methods for growing this film. A film is grown by patterning a substrate, and growing the Group Ill-nitride semiconductor film containing aluminum on the substrate at a temperature designed to increase the mobility of aluminum atoms to increase a lateral growth rate of the Group Ill-nitride semiconductor film. The film optionally includes a substrate patterned with elevated stripes separated by trench regions, wherein the stripes have a height chosen to allow the Group Ill-nitride semiconductor film to coalesce prior to growth from the bottom of the trenches reaching the top of the stripes, the temperature being greater than 1075 °C, the Group Ill-nitride semiconductor film being grown using hydride vapor phase epitaxy, the stripes being oriented along a (1-100) direction of the substrate or the growing film, and a dislocation density of the grown film being less than 10 7 cm -2 .
摘要翻译：含有铝的III族氮化物半导体膜，以及用于生长该膜的方法。通过图案化衬底来生长膜，并且在设计为提高铝原子的迁移率的温度下在衬底上生长包含铝的III族氮化物半导体膜，以增加III族氮化物半导体膜的横向生长速率。所述膜任选地包括图案化为具有由沟槽区域分离的升高的条纹的衬底，其中所述条纹的高度被选择为允许III族氮化物半导体膜在从沟槽的底部生长到达条纹的顶部之前聚结，温度高于1075℃时，使用氢化物气相外延生长III族氮化物半导体膜，所述条纹沿着衬底或生长膜的（1-100）方向取向，生长的位错密度电影小于10 cm ^{-2 。}

47. 发明申请

WO2008057454A3 GROWTH AND MANUFACTURE OF REDUCED DISLOCATION DENSITY AND FREE-STANDING ALUMINUM NITRIDE FILMS BY HYDRIDE VAPOR PHASE EPITAXY 审中-公开
标题翻译：通过液相蒸发相外观降低离散密度和自由放置的氮化铝膜的生长和制造
公开(公告)号：WO2008057454A3
公开(公告)日：2008-07-03
申请号：PCT/US2007023209
申请日：2007-11-02
申请人： UNIV CALIFORNIA , JANPAN SCIENCE AND TECHNOLOGY , KAMBER DERRICK S , NAKAMURA SHUJI , SPECK JAMES S
发明人： KAMBER DERRICK S , NAKAMURA SHUJI , SPECK JAMES S
IPC分类号： C01B21/072 , H01L21/20
CPC分类号： C30B29/403 , C30B25/183 , H01L21/0237 , H01L21/0254 , H01L21/02639 , H01L21/0265
摘要： A Group Ill-nitride semiconductor film containing aluminum, and methods for growing this film. A film is grown by patterning a substrate, and growing the Group Ill-nitride semiconductor film containing aluminum on the substrate at a temperature designed to increase the mobility of aluminum atoms to increase a lateral growth rate of the Group Ill-nitride semiconductor film. The film optionally includes a substrate patterned with elevated stripes separated by trench regions, wherein the stripes have a height chosen to allow the Group Ill-nitride semiconductor film to coalesce prior to growth from the bottom of the trenches reaching the top of the stripes, the temperature being greater than 1075 °C, the Group Ill-nitride semiconductor film being grown using hydride vapor phase epitaxy, the stripes being oriented along a (1-100) direction of the substrate or the growing film, and a dislocation density of the grown film being less than 10 7 cm -2 .
摘要翻译：含有铝的III族氮化物半导体膜及其生长方法。通过图案化衬底生长膜，并且在设计为增加铝原子的迁移率以增加III族氮化物半导体膜的横向生长速率的温度下，在衬底上生长含有铝的III族氮化物半导体膜。膜可选地包括用沟槽区域分隔开的高条纹图案化的衬底，其中条纹具有选择的高度以允许III族氮化物半导体膜在从沟槽的底部到达条纹的顶部的生长之前聚结，温度大于1075℃时，使用氢化物气相外延生长III族氮化物半导体膜，条纹沿着衬底或生长膜的（1-100）方向取向，并且生长的位错密度薄膜的面积小于10 -7 cm -2。

48. 发明申请

WO2007117689A2 METHOD FOR GROWING LARGE SURFACE AREA GALLIUM NITRIDE CRYSTALS IN SUPERCRITICAL AMMONIA AND LARGE SURFACE AREA GALLIUM NITRIDE CRYSTALS 审中-公开
标题翻译：在超临界氨氮和大面积氮化钠晶体中生长大面积氮化钠晶体的方法
公开(公告)号：WO2007117689A2
公开(公告)日：2007-10-18
申请号：PCT/US2007008743
申请日：2007-04-06
申请人： UNIV CALIFORNIA , JAPAN SCIENCE & TECH AGENCY , HASHIMOTO TADAO , NAKAMURA SHUJI , SAITO MAKOTO
发明人： HASHIMOTO TADAO , NAKAMURA SHUJI , SAITO MAKOTO
IPC分类号： C30B7/00 , C30B11/00
CPC分类号： C30B29/406 , C30B7/10 , C30B9/00
摘要： A method for growing gallium nitride (GaN) crystals in supercritical ammonia using an autoclave is disclosed. Large surface area GaN crystals are created, which may include calcium, magnesium or vanadium or less than 1% indium.
摘要翻译：公开了一种使用高压釜在超临界氨中生长氮化镓（GaN）晶体的方法。产生大面积的GaN晶体，其可包括钙，镁或钒或小于1％的铟。

49. 发明申请

WO2009039398A1 GALLIUM NITRIDE BULK CRYSTALS AND THEIR GROWTH METHOD 审中-公开
标题翻译：氮化钾块状晶体及其生长方法
公开(公告)号：WO2009039398A1
公开(公告)日：2009-03-26
申请号：PCT/US2008077056
申请日：2008-09-19
申请人： UNIV CALIFORNIA , HASHIMOTO TADAO , NAKAMURA SHUJI
发明人： HASHIMOTO TADAO , NAKAMURA SHUJI
IPC分类号： C30B23/02
CPC分类号： C30B29/406 , C30B7/10
摘要： A gallium nitride crystal with a polyhedron shape having exposed {10-10} m- planes and an exposed (000-1) N-polar c-plane, wherein a surface area of the exposed (000-1) N-polar c-plane is more than 10 mm2 and a total surface area of the exposed {10-10} m-planes is larger than half of the surface area of (000-1) N-polar c-plane. The GaN bulk crystals were grown by an ammonothermal method with a higher temperature and temperature difference than is used conventionally, and using an autoclave having a high-pressure vessel with an upper region and a lower region. The temperature of the lower region of the high-pressure vessel is at or above 55O0C, the temperature of the upper region of the high-pressure vessel is set at or above 5000C, and the temperature difference between the lower and upper regions is maintained at or above 3O0C. GaN seed crystals having a longest dimension along the c-axis and exposed large area m-planes are used.
摘要翻译：具有暴露的{10-10} m面的多面体形状和暴露的（000-1）N-极性c面的氮化镓晶体，其中暴露（000-1）N-极性c-面的表面积，平面大于10平方毫米，暴露的{10-10} m面的总表面积大于（000-1）N极C面的表面积的一半。通过具有比常规使用的更高的温度和温度差的氨热法生长GaN块状晶体，并且使用具有上部区域和下部区域的高压容器的高压釜。高压容器的下部区域的温度为550℃以上，高压容器的上部区域的温度为500℃以上，下部和上部区域之间的温度差保持在或高于30℃。使用沿着c轴具有最长尺寸和暴露的大面积m面的GaN晶种。

50. 发明申请

WO2007133766A8 ELECTRICALLY-PUMPED (GA,IN, AI) N VERTICAL-CAVITY SURFACE-EMITTING LASER 审中-公开
标题翻译：电动泵（GA，IN，AI）N垂直表面发射激光
公开(公告)号：WO2007133766A8
公开(公告)日：2008-03-13
申请号：PCT/US2007011614
申请日：2007-05-15
申请人： UNIV CALIFORNIA , FEEZELL DANIEL F , COHEN DANIEL A , FARRELL ROBERT M , ISHIDA MASAHIRO , NAKAMURA SHUJI
发明人： FEEZELL DANIEL F , COHEN DANIEL A , FARRELL ROBERT M , ISHIDA MASAHIRO , NAKAMURA SHUJI
IPC分类号： H01S5/00 , H01S3/04
CPC分类号： H01S5/18341 , H01S5/0207 , H01S5/0421 , H01S5/0425 , H01S5/18308 , H01S5/18388 , H01S5/32341
摘要： A vertical-cavity surface-emitting laser (VCSEL) comprising a low-loss thin metal contact and current spreading layer within the optical cavity that provides for improved ohmic contact and lateral current distribution, a substrate including a plano concave optical cavity, a (Ga,In,A1)N multiple quantum well (MQW) active region contained within the optical cavity that generates light when injected by an electrical current, and an integrated micromirror fabricated onto the substrate that provides for optical mode control of the light generated by the active region. A relatively simple process is used to fabricate the VCSEL.
摘要翻译：一种垂直腔表面发射激光器（VCSEL），其包括光腔内的低损耗薄金属接触和电流扩散层，其提供改善的欧姆接触和横向电流分布;衬底，包括平凹光学腔，（Ga ，In，Al）N多量子阱（MQW）有源区，其包含在通过电流注入时产生光的光学腔内;以及集成微镜，其被制造到衬底上，该微镜提供由活性物质产生的光的光学模式控制地区。使用相对简单的过程制造VCSEL。

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