会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 32. 发明申请
    • A VARIABLE TRANSFORMER
    • 可变变压器
    • WO00072337A1
    • 2000-11-30
    • PCT/EP2000/005227
    • 2000-05-25
    • H01F29/12H01F21/04
    • H01F29/12H01F2029/143
    • A transformer or reactor comprises a main winding (3) wound around a magnetic flux carrier (1), a regulating winding (4) connected to said main winding and wound around a part of said magnetic flux carrier between a first limb and a second limb of said carrier, and a flux control winding (5) wound around said first and second limbs. The effective proportion of the flux control winding (5) wound around one of said first and second limbs is variable between 0 and 100%, to vary the voltage induced in said regulating winding (4).
    • 变压器或电抗器包括缠绕在磁通量载体(1)上的主绕组(3),连接到所述主绕组的调节绕组(4),并缠绕在所述磁通量载体的一部分之间,在第一分支和第二分支之间 以及围绕所述第一和第二肢体缠绕的磁通控制绕组(5)。 卷绕在所述第一和第二肢体之一上的磁通控制绕组(5)的有效比例在0和100%之间变化,以改变在所述调节绕组(4)中感应的电压。
    • 34. 发明申请
    • LOW CEILING TEMPERATURE PROCESS FOR A PLASMA REACTOR WITH HEATED SOURCE OF A POLYMER-HARDENING PRECURSOR MATERIAL
    • 用于聚合物硬化前体材料的加热源的等离子体反应器的低天花板温度过程
    • WO99036931A2
    • 1999-07-22
    • PCT/US1998/027046
    • 1998-12-17
    • H01L21/3065C23C16/517H01J37/32H01L21/311H01L21/683H01J
    • H01J37/32871C23C16/517H01F2029/143H01J37/32082H01J37/321H01J37/32146H01J37/32165H01J37/32458H01J37/32467H01J37/32522H01J37/32688H01J37/32706H01J2237/3343H01J2237/3345H01J2237/3346H01J2237/3382H01L21/31116H01L21/6831
    • A high plasma density etch process for etching an oxygen-containing layer overlying a non-oxygen containing layer on a workpiece in a plasma reactor chamber, by providing a chamber ceiling overlying the workpiece and containing a semiconductor material, supplying into the chamber a process gas containing etchant precursor species, polymer precursor species and hydrogen, applying plasma source power into the chamber, and cooling the ceiling to a temperature range at or below about 150 degrees C. The etchant and polymer precursor species contain fluorine, and the chamber ceiling semiconductor material includes a fluorine scavenger precursor material. Preferably, the process gas includes at least one of CHF3 and CH2F2. Preferably, the process gas further includes a species including an inert gas, such as HeH2 or Ar. If the chamber is of the type including a heated fluorine scavenger precursor material, this material is heated to well above the polymer condensation temperature, while the ceiling is cooled. In some cases, the plasma source power applicator is an inductive antenna overlying the semiconductor ceiling, and the ceiling has a cooling/heating apparatus contacting the ceiling through semiconductor rings. The inductive antenna in this case constitutes inductive elements between adjacent ones of the semiconductor rings.
    • 一种高等离子体密度蚀刻工艺,用于在等离子体反应器腔室中蚀刻覆盖在工件上的非含氧层的含氧层,通过提供覆盖在工件上并容纳半导体材料的室顶部,向腔室供应工艺气体 包含蚀刻剂前体物质,聚合物前体物质和氢气,将等离子体源功率施加到室中,并将天花板冷却到约150℃或以下的温度范围。蚀刻剂和聚合物前体物质含有氟,并且室顶部半导体材料 包括氟清除剂前体材料。 优选地,工艺气体包括CHF 3和CH 2 F 2中的至少一种。 优选地,处理气体还包括包含惰性气体的物质,例如HeH 2或Ar。 如果室是包括加热的氟清除剂前体材料的类型,则将该材料加热到高于聚合物冷凝温度,同时天花板被冷却。 在一些情况下,等离子体源功率施加器是覆盖半导体天花板的感应天线,天花板具有通过半导体环与天花板接触的冷却/加热设备。 在这种情况下,感应天线在相邻的半导体环之间构成感应元件。
    • 40. 发明申请
    • MAGNETIC VALVE
    • 磁阀
    • WO1991006110A1
    • 1991-05-02
    • PCT/EP1990001725
    • 1990-10-12
    • SCHULZE, Eckehart
    • H01F07/16
    • H01F7/1607H01F2029/143
    • In a magnetic valve with a control magnet arrangement, consisting of a stator of magnetisable material, an armature of magnetisable material, pole-pieces fitted at the fronts of the sator, two control windings coaxially surrounding the armature and fitted side by side in the stator, return springs holding the armature in a basic position and a valve connected to the control magnet arrangement with a valve body connected to the armature and movable longitudinally in a valve housing, a shorter response time of the valve to a change in the control current is achieved in that the two control windings have a control current flowing through them in such a way that they set up opposing fields and have a permanent non-zero steady current flowing through them, and, with the armature in the operative position, at least one of the control windings has a working current flowing through it which is different from the steady current but of the same polarity.