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31. 发明申请

WO2004061981A1 BORON PHOSPHIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREOF 审中-公开
标题翻译：基于磷光体的半导体发光器件及其生产方法
公开(公告)号：WO2004061981A1
公开(公告)日：2004-07-22
申请号：PCT/JP2003/016816
申请日：2003-12-25
申请人： SHOWA DENKO K. K. , UDAGAWA, Takashi
发明人： UDAGAWA, Takashi
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L21/02381 , H01L21/02458 , H01L21/02461 , H01L21/0254 , H01L21/02543 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/28575 , H01L33/145 , H01L33/16 , H01L33/30
摘要： A boron phosphide-based semiconductor light-emitting device, comprising: a crystalline substrate; a first semiconductor layer formed on said crystalline substrate, said first semiconductor layer including a light-emitting layer, serving as a base layer and having a first region and a second region different from the first region; a boron phosphide-based semiconductor amorphous layer formed on said first region of said first semiconductor layer, said boron phosphide-based semiconductor amorphous layer including a high-resistance boron phosphide-based semiconductor amorphous layer or a first boron phosphide-based semiconductor amorphous layer having a conduction type opposite to that of said first semiconductor layer; a pad electrode formed on said high-resistance or opposite conductivity-type boron phosphide-based semiconductor amorphous layer for establishing wire bonding; and a conductive boron phosphide-based crystalline layer formed on said second region of said first semiconductor layer, said conductive boron phosphide-based crystalline layer extending optionally to a portion of said boron phosphide-based semiconductor amorphous layer, wherein said pad electrode is in contact with said boron phosphide-based semiconductor crystalline layer at a portion of said pad electrode above the bottom of said pad electrode.
摘要翻译：一种磷化硼基半导体发光器件，包括：晶体衬底; 形成在所述结晶基板上的第一半导体层，所述第一半导体层包括作为基底层的发光层，具有与所述第一区域不同的第一区域和第二区域; 形成在所述第一半导体层的所述第一区域上的磷化硅基半导体非晶层，所述磷化磷基半导体非晶层包括高电阻磷化硼基半导体非晶层或第一磷化硼基半导体非晶层，与所述第一半导体层相反的导电类型; 形成在所述高电阻或相反导电型磷化硅基半导体非晶层上的焊盘电极，用于建立引线键合; 以及形成在所述第一半导体层的所述第二区域上的导电磷化硼基晶体层，所述导电磷化硼基晶体层任选地延伸到所述磷化硼基半导体非晶层的一部分，其中所述焊盘电极接触所述磷化硅基半导体晶体层在所述焊盘电极的位于所述焊盘电极的底部之上的部分处。

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