专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明申请

WO2012154747A4 HIGH PRESSURE BEVEL ETCH PROCESS 审中-公开
标题翻译：高压斜面蚀刻工艺
公开(公告)号：WO2012154747A4
公开(公告)日：2013-03-14
申请号：PCT/US2012036954
申请日：2012-05-08
申请人： LAM RES CORP , FANG TONG , KIM YUNSANG S , FISCHER ANDREAS
发明人： FANG TONG , KIM YUNSANG S , FISCHER ANDREAS
IPC分类号： H01L21/3065
CPC分类号： H01L21/02087 , H01J37/32366 , H01J37/32385 , H01L21/02021 , H01L21/3065 , H01L21/32136 , H01L21/32138
摘要： A method of bevel edge processing a semiconductor in a bevel plasma processing chamber in which the semiconductor substrate is supported on a semiconductor substrate support is provided. The method comprises evacuating the bevel etcher to a pressure of 3 to 100 Torr and maintaining RF voltage under a threshold value; flowing a process gas into the bevel plasma processing chamber; energizing the process gas into a plasma at a periphery of the semiconductor substrate; and bevel processing the semiconductor substrate with the plasma.
摘要翻译：提供了一种在斜面等离子体处理室中对半导体进行斜面边缘处理的方法，其中半导体衬底支撑在半导体衬底支撑件上。该方法包括将斜面蚀刻机抽空至3至100托的压力并将RF电压维持在阈值以下; 使处理气体流入斜面等离子体处理室; 在半导体衬底的周边处将处理气体激励成等离子体; 用等离子体对半导体衬底进行斜面加工。

32. 发明申请

WO2012154747A3 HIGH PRESSURE BEVEL ETCH PROCESS 审中-公开
标题翻译：高压水洗工艺
公开(公告)号：WO2012154747A3
公开(公告)日：2013-01-17
申请号：PCT/US2012036954
申请日：2012-05-08
申请人： LAM RES CORP , FANG TONG , KIM YUNSANG S , FISCHER ANDREAS
发明人： FANG TONG , KIM YUNSANG S , FISCHER ANDREAS
IPC分类号： H01L21/3065
CPC分类号： H01L21/02087 , H01J37/32366 , H01J37/32385 , H01L21/02021 , H01L21/3065 , H01L21/32136 , H01L21/32138
摘要： A method of bevel edge processing a semiconductor in a bevel plasma processing chamber in which the semiconductor substrate is supported on a semiconductor substrate support is provided. The method comprises evacuating the bevel etcher to a pressure of 3 to 100 Torr and maintaining RF voltage under a threshold value; flowing a process gas into the bevel plasma processing chamber; energizing the process gas into a plasma at a periphery of the semiconductor substrate; and bevel processing the semiconductor substrate with the plasma.
摘要翻译：提供了一种在半导体衬底支撑在半导体衬底支撑件上的斜面等离子体处理室中斜面加工半导体的方法。该方法包括将斜面蚀刻机抽空至3至100托的压力并将RF电压维持在阈值以下; 将工艺气体流入斜面等离子体处理室; 使所述工艺气体在所述半导体衬底的外围处于等离子体中; 并用等离子体对半导体衬底进行斜面加工。

33. 发明申请

WO2011003932A2 METHOD FOR THE DIRECT AMINATION OF HYDROCARBONS INTO AMINO HYDROCARBONS, INCLUDING ELECTROCHEMICAL SEPARATION OF HYDROGEN 审中-公开
标题翻译：直接处理烃与氢的电化学分离AMINOKOHLENWASSERSTOFFEN
公开(公告)号：WO2011003932A2
公开(公告)日：2011-01-13
申请号：PCT/EP2010059709
申请日：2010-07-07
申请人： BASF SE , KUBANEK PETR , PANCHENKO ALEXANDER , FISCHER ANDREAS , HEIDEMANN THOMAS
发明人： KUBANEK PETR , PANCHENKO ALEXANDER , FISCHER ANDREAS , HEIDEMANN THOMAS
IPC分类号： C07C209/02
CPC分类号： B01D53/229 , B01D2256/16 , C25B3/00
摘要： Disclosed is a method for the direct amination of hydrocarbons into amino hydrocarbons by reacting a feedstock stream E containing at least one hydrocarbon and at least one amination reagent so as to obtain a reaction mixture R containing amino hydrocarbons and hydrogen in a reaction zone RZ, and electrochemically separating at least some of the hydrogen produced during the reaction from the reaction mixture R by means of a gas-tight membrane-electrode assembly comprising at least one membrane selectively conducting protons and at least one electrode catalyst on each side of the membrane, wherein at least some of the hydrogen is oxidized to protons on the anode catalyst on the retentate side of the membrane, and the protons are reduced to hydrogen on the cathode catalyst on the permeate side after penetrating the membrane.
摘要翻译：一种用于通过反应物料流E反应烃Aminokohlenwasserstoffen的直接胺化过程中，含有至少一种烃和至少一种胺化试剂，含有Aminokohlenwasserstoffe和氢在反应区RZ的反应混合物的R，并将该反应氢期间形成的至少一部分的电化学分离将反应混合物R包括气密膜电极组件，所述至少一个选择性质子传导膜和在所述膜的至少一个电极催化剂的每一侧，其中，在所述阳极催化剂至少一个氢的一部分被氧化成质子在膜和质子的滞留物侧通过膜后减少到阴极催化剂的渗透侧，以氢。

34. 发明申请

WO2010117970A3 MULTIFREQUENCY CAPACITIVELY COUPLED PLASMA ETCH CHAMBER 审中-公开
标题翻译：多功能电容耦合等离子体蚀刻室
公开(公告)号：WO2010117970A3
公开(公告)日：2011-01-13
申请号：PCT/US2010030020
申请日：2010-04-06
申请人： LAM RES CORP , MARAKHTANOV ALEXEI , DHINDSA RAJINDER , KOSHIISHI AKIRA , FISCHER ANDREAS
发明人： MARAKHTANOV ALEXEI , DHINDSA RAJINDER , KOSHIISHI AKIRA , FISCHER ANDREAS
IPC分类号： H01L21/3065 , H05H1/34 , H05H1/36
CPC分类号： H01L21/2633 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01J37/32532 , H01J37/32577
摘要： A plasma processing system for use with a gas. The plasma processing system comprises a first electrode, a second electrode, a gas input port, a power source and a passive circuit. The gas input port is operable to provide the gas between the first electrode and the second electrode. The power source is operable to ignite plasma from the gas between the first electrode and the second electrode. The passive circuit is coupled to the second electrode and is configured to adjust one or more of an impedance, a voltage potential, and a DC bias potential of the second electrode. The passive radio frequency circuit comprises a capacitor arranged in parallel with an inductor.
摘要翻译：一种与气体一起使用的等离子体处理系统。等离子体处理系统包括第一电极，第二电极，气体输入端口，电源和无源电路。气体输入端口可操作以在第一电极和第二电极之间提供气体。电源可操作地从第一电极和第二电极之间的气体点燃等离子体。无源电路耦合到第二电极，并且被配置为调节第二电极的阻抗，电压电位和DC偏置电位中的一个或多个。无源射频电路包括与电感器并联布置的电容器。

35. 发明申请

WO2010133989A2 ARRANGEMENTS AND METHODS FOR IMPROVING BEVEL ETCH REPEATABILITY AMONG SUBSTRATES 审中-公开
标题翻译：改善基质中水分可重复性的安排和方法
公开(公告)号：WO2010133989A2
公开(公告)日：2010-11-25
申请号：PCT/IB2010051945
申请日：2010-05-04
申请人： LAM RES CORP , LAM RES AG , FISCHER ANDREAS , SHIN NEUNGHO , CAMARGO FRANSISCO
发明人： FISCHER ANDREAS , SHIN NEUNGHO , CAMARGO FRANCISCO
IPC分类号： H01L21/3065
CPC分类号： H01L22/20 , H01L22/12
摘要： A method, performed in connection with bevel etching of a substrate, for improving bevel- etch repeatability among substrates, is disclosed. The method includes providing an optical arrangement and ascertaining at least one bevel edge characteristic of a bevel edge of said substrate. The method also includes deriving at least one compensation factor from said at least one bevel edge characteristic, said at least one compensation factor pertaining to an adjustment in a bevel etch process parameter. The method further includes performing said bevel etching utilizing said at least one compensation factor.
摘要翻译：公开了一种与衬底的斜面蚀刻相关的方法，用于改善衬底之间的斜面蚀刻可重复性。该方法包括提供光学布置并且确定所述基板的斜边缘的至少一个斜边缘特性。该方法还包括从所述至少一个斜面边缘特性导出至少一个补偿因子，所述至少一个补偿因子属于斜面蚀刻工艺参数中的调整。该方法还包括利用所述至少一个补偿因子执行所述斜面蚀刻。

36. 发明申请

WO2006114277A3 DOSAGE FORM WITH IMPROVED RELEASE OF CEFUROXIMAXETIL 审中-公开
标题翻译：与CEFUROXIMAXETIL改进释放药物FORM
公开(公告)号：WO2006114277A3
公开(公告)日：2007-05-24
申请号：PCT/EP2006003814
申请日：2006-04-25
申请人： GRUENENTHAL GMBH , ZIEGLER IRIS , FISCHER ANDREAS
发明人： ZIEGLER IRIS , FISCHER ANDREAS
IPC分类号： A61K9/20 , A61K9/28 , A61K31/43
CPC分类号： A61K9/5047 , A61K9/1611 , A61K9/1652 , A61K31/43 , A61K31/546
摘要： The invention relates to a pharmaceutical composition which comprises cefuroximaxetil and at least one carrageenan selected from the group including ?-carrageenan, ?-carrageenan and ?-carrageenan. The invention also relates to pellets, to a multiparticulate, pharmaceutical dosage form and to a novel crystalline modification of cefuroximaxetil.
摘要翻译：本发明涉及选自由以下组成的组中选择的药物组合物，包括头孢呋辛酯和至少一个角叉菜胶κ-卡拉胶,?κ-卡拉胶和κ-卡拉胶。此外，本发明涉及粒料，一种多，药物Darreichungsforrn和头孢呋辛酯的新结晶变。

37. 发明申请

WO2006044198A3 HEAT TRANSFER SYSTEM FOR IMPROVED SEMICONDUCTOR PROCESSING UNIFORMITY 审中-公开
标题翻译：用于改进半导体加工均匀性的热传递系统
公开(公告)号：WO2006044198A3
公开(公告)日：2006-06-22
申请号：PCT/US2005035751
申请日：2005-10-06
申请人： LAM RES CORP , FISCHER ANDREAS
发明人： FISCHER ANDREAS
IPC分类号： C23C16/00
CPC分类号： C03C15/00 , C03C17/23 , C03C2217/213 , C03C2218/33 , H01J2237/2001 , H01L21/31116 , H01L21/67103 , H01L21/67109 , H01L21/68742 , H01L21/6875 , H01L21/68778
摘要： A plasma processing system and methods for processing a substrate using a heat transfer system are provided. The heat transfer system, which is capable of producing a high degree of processing uniformity across the surface of a substrate, comprises a uniformity pedestal supported on and in good thermal contact with a heat transfer member. The uniformity pedestal includes a pin array which provides a conformal substrate support surface (i.e., contact surface) that can conform to the profile of a backside surface of a substrate during processing. To uniformly cool a substrate, a large thermal gradient can be established between the uniformity pedestal and the heat transfer member during the processing of a substrate.
摘要翻译：提供了一种等离子体处理系统和使用传热系统处理衬底的方法。能够在基板的表面上产生高度的加工均匀性的传热系统包括支撑在热传递部件上并与热传递部件良好热接触的均匀性基座。均匀性基座包括引脚阵列，该引脚阵列提供在加工过程中能够符合衬底的背面的轮廓的共形衬底支撑表面（即，接触表面）。为了均匀地冷却基板，可以在基板的加工期间在均匀性基座和传热构件之间建立大的热梯度。

38. 发明申请

WO02066666A3 METHOD FOR PRODUCING D-PANTOTHENIC ACID AND/OR SALTS THEREOF AS AN ADDITIVE FOR ANIMAL FEED 审中-公开
标题翻译：用于生产D-泛酸和/或它的盐除了动物饲料
公开(公告)号：WO02066666A3
公开(公告)日：2003-07-17
申请号：PCT/EP0201766
申请日：2002-02-20
申请人： BASF AG , BALDENIUS KAI-UWE , BECK CHRISTINE , FISCHER ANDREAS , HARZ HANS-PETER , LOHSCHEIDT MARKUS , LEEMANN MARTIN
发明人： BALDENIUS KAI-UWE , BECK CHRISTINE , FISCHER ANDREAS , HARZ HANS-PETER , LOHSCHEIDT MARKUS , LEEMANN MARTIN
IPC分类号： C12P13/00 , A23K10/12 , A23K20/174 , C12P13/02 , C12R1/10 , A23K1/00
CPC分类号： C12P13/02 , A23K10/12 , A23K20/174
摘要： The invention relates to an improved method for producing D-pantothenic acid and/or salts thereof and to the use thereof as an additive for animal feed.
摘要翻译：本发明涉及一种用于制备vervessertes D-Pantothensaüreun7oder它们的盐以及它们作为添加剂，以动物饲料使用。

39. 发明申请

WO02078062A3 ACOUSTIC DETECTION OF DECHUCKING AND APPARATUS THEREFOR 审中-公开
标题翻译：声音检测及其设备
公开(公告)号：WO02078062A3
公开(公告)日：2003-03-13
申请号：PCT/US0206649
申请日：2002-03-21
申请人： LAM RES CORP , FISCHER ANDREAS
发明人： FISCHER ANDREAS
IPC分类号： H01L21/3065 , G01N29/12 , H01L21/205 , H01L21/683 , H01L21/00
CPC分类号： G03F7/707 , G01N29/12 , G01N2291/02827 , G01N2291/2698 , H01L21/67259 , H01L21/6831
摘要： In a vacuum processing chamber, a monitoring arrangement for detecting when a substrate is sufficiently dechucked by an electrostatic clamp to allow safe movement thereof by a transfer mechanism such as a pin lifter. The monitoring arrangement includes an acoustic generator which outputs a sound wave at the resonant frequency of the substrate and the dechucking condition is detected when the sound wave is adsorbed by the substrate. The arrangement can be used during processing of wafers such as plasma etching or chemical vapor deposition.
摘要翻译：在真空处理室中，用于检测基板是否被静电夹具充分地卡住以便通过诸如针式升降器的传送机构的安全移动的监视装置。监视装置包括：声发生器，其输出基板的谐振频率处的声波，并且当声波被基板吸附时检测脱扣状态。该布置可以在诸如等离子体蚀刻或化学气相沉积的晶片的处理期间使用。

40. 发明申请

WO2011150905A4 METHOD AND ARRANGEMENT FOR DETECTING BIOLOGICAL AND/OR CHEMICAL SUBSTANCES 审中-公开
标题翻译：方法和系统检测生物和/或化学物质
公开(公告)号：WO2011150905A4
公开(公告)日：2012-03-01
申请号：PCT/DE2011000445
申请日：2011-04-25
申请人： JENOPTIK POLYMER SYSTEMS GMBH , FISCHER ANDREAS
发明人： FISCHER ANDREAS
IPC分类号： G01N21/77
CPC分类号： G01N21/554 , G01N2201/0628
摘要： The invention relates to a method and at least one arrangement for detecting biological and/or chemical substances. A light beam or a light bundle generated by a pumped light energy source with an excitation wavelength ?? is directed onto a carrier substrate, on which an optical function structure in the form of an organic luminous means is situated, on which in turn the substance(s) to be detected is/are deposited in a suitable form, such that the difference wavelength ??? or XR produced as a result of absorption and changed diffraction optical properties is captured using a suitable receiver, and an evaluation unit that is coupled thereto is used to detect the substances on the basis of a data comparison system. The organic phosphor is preferably at least one organic distributed feedback laser (DFB laser). The method and a special arrangement can also be used to detect a specific substance using individual laser pixels (2P).
摘要翻译：本发明涉及一种方法和至少一个阵列，用于检测生物和/或化学物质。甲从泵浦光能量源的光束或用激发波长的光束产生的?? 是作为转向到载体衬底，和其上的光学功能结构是有机荧光材料的形式，在其上，反过来，待检测/ N物质/ s的是在适当的形式施加，从而使吸收衍射光学特性的改变的结果而产生的差的波长 ??? 或XR由合适的接收器检测到，并且该物质的检测经由耦合到其上的数据比较系统的基础上的分析单元执行。优选地，所述有机荧光的至少一个有机分布式反馈激光器是（DFB激光器）。该方法和一种特殊的布置也可以用于检测在各个激光像素（2P）的特定物质的都可以使用。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式