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31. 发明申请

WO2012112379A1 LIGHT EMITTING DIODE (LED) ARRAYS INCLUDING DIRECT DIE ATTACH AND RELATED ASSEMBLIES 审中-公开
标题翻译：发光二极管（LED）阵列包括直接连接和相关组件
公开(公告)号：WO2012112379A1
公开(公告)日：2012-08-23
申请号：PCT/US2012/024580
申请日：2012-02-10
申请人： CREE, INC. , DONOFRIO, Matthew , EDMOND, John Adam , KONG, Hua-Shuang , ANDREWS, Peter S. , EMERSON, David Todd
发明人： DONOFRIO, Matthew , EDMOND, John Adam , KONG, Hua-Shuang , ANDREWS, Peter S. , EMERSON, David Todd
IPC分类号： H01L33/20
CPC分类号： H01L25/0753 , H01L33/505 , H01L33/62 , H01L2224/16
摘要： An electronic device may include a packaging substrate having a packaging substrate face with a plurality of electrically conductive pads on the packaging substrate face. A first light emitting diode die may bridge first and second ones of the electrically conductive pads. More particularly, the first light emitting diode die may include first anode and cathode contacts respectively coupled to the first and second electrically conductive pads using metallic bonds. Moreover, widths of the metallic bonds between the first anode contact and the first pad and between the first cathode contact and the second pad may be at least 60 percent of a width of the first light emitting diode die. A second light emitting diode die may bridge third and fourth ones of the electrically conductive pads.
摘要翻译：电子设备可以包括具有包装基板面的封装基板，在封装基板面上具有多个导电焊盘。第一发光二极管管芯可以桥接第一和第二导电焊盘。更具体地，第一发光二极管管芯可以包括使用金属接合分别耦合到第一和第二导电焊盘的第一阳极和阴极触点。此外，第一阳极接触件和第一焊盘之间以及第一阴极接触件和第二焊盘之间的金属接合的宽度可以是第一发光二极管管芯的宽度的至少60％。第二发光二极管管芯可以桥接第三和第四导电焊盘。

32. 发明申请

WO2012106110A2 REFLECTIVE MOUNTING SUBSTRATES FOR FLIP-CHIP MOUNTED HORIZONTAL LEDS 审中-公开
标题翻译：用于倒装芯片安装的水平LED的反射安装基板
公开(公告)号：WO2012106110A2
公开(公告)日：2012-08-09
申请号：PCT/US2012/021631
申请日：2012-01-18
申请人： CREE, INC. , DONOFRIO, Matthew , EDMOND, John Adam , ANDREWS, Peter Scott , CHANG, David Der Chi
发明人： DONOFRIO, Matthew , EDMOND, John Adam , ANDREWS, Peter Scott , CHANG, David Der Chi
IPC分类号： H01L33/50 , H01L33/58
CPC分类号： H01L33/60 , H01L25/0753 , H01L33/20 , H01L33/486 , H01L33/505 , H01L33/62 , H01L2224/16
摘要： A light emitting device includes a mounting substrate having a reflective layer that defines spaced apart anode and cathode pads, and a gap between them. A light emitting diode die is flip-chip mounted on the mounting substrate, such that the anode contact of the LED die is bonded to the anode pad and the cathode contact of the LED die is bonded to the cathode pad. A lens extends from the mounting substrate to surround the LED die. The reflective layer extends on the mounting substrate to cover substantially all of the mounting substrate that lies beneath the lens, excluding the gap, and may also extend beyond the lens.
摘要翻译：发光器件包括具有限定间隔开的阳极和阴极焊盘以及它们之间的间隙的反射层的安装基板。将发光二极管管芯倒装安装在安装基板上，使得LED管芯的阳极接触件接合到阳极焊盘，并将LED管芯的阴极接触件接合到阴极焊盘。透镜从安装基板延伸以围绕LED管芯。反射层在安装基板上延伸以覆盖位于透镜下方的基本上所有的安装基板，不包括间隙，并且还可以延伸超出透镜。

33. 发明申请

WO2010059456A1 SEMICONDUCTOR LIGHT EMITTING APPARATUS INCLUDING ELONGATED HOLLOW WAVELENGTH CONVERSION TUBES AND METHODS OF ASSEMBLING SAME 审中-公开
标题翻译：半导体发光装置，包括中长波长转换管及其组装方法
公开(公告)号：WO2010059456A1
公开(公告)日：2010-05-27
申请号：PCT/US2009/063804
申请日：2009-11-10
申请人： CREE, INC. , HUSSELL, Christopher, P. , EDMOND, John, Adam
发明人： HUSSELL, Christopher, P. , EDMOND, John, Adam
IPC分类号： F21V8/00 , G02B6/00
CPC分类号： F21V15/01 , F21K9/00 , F21K9/61 , F21K9/64 , F21V29/70 , F21Y2115/10 , G02B6/0003 , G02B6/001 , G02B6/0035 , G02B6/005 , G02B6/0096
摘要： A semiconductor light emitting apparatus includes an elongated hollow wavelength conversion tube that includes an elongated wavelength conversion tube wall having wavelength conversion material, such as phosphor, dispersed therein. A semiconductor light emitting device is oriented to emit light inside the elongated hollow wavelength conversion tube to impinge upon the elongated wavelength conversion tube wall and the wavelength conversion material dispersed therein. The elongated hollow wavelength conversion tube may have an open end, a crimped end, a reflective end, and/or other configurations. Multiples tubes and/or multiple semiconductor light emitting devices may also be used in various configurations. Related assembling methods are also described.
摘要翻译：半导体发光装置包括细长的中空波长转换管，其包括分散在其中的具有波长转换材料（例如磷光体）的细长波长转换管壁。半导体发光器件被定向以在细长的中空波长转换管内发光，以照射到分散在其中的细长波长转换管壁和波长转换材料。细长的中空波长转换管可以具有开口端，压接端，反射端和/或其它构造。多个管和/或多个半导体发光器件也可以以各种配置使用。还描述了相关的组装方法。

34. 发明申请

WO2009123726A3 EMISSION TUNING METHODS AND DEVICES FABRICATED UTILIZING METHODS 审中-公开
公开(公告)号：WO2009123726A3
公开(公告)日：2009-10-08
申请号：PCT/US2009/002039
申请日：2009-03-31
申请人： CREE, INC. , CHITNIS, Ashay , EDMOND, John , BRITT, Jeffrey, C. , KELLER, Bernd, P. , EMERSON, David, T. , BERGMANN, Michael, John , CABALU, Jasper, S.
发明人： CHITNIS, Ashay , EDMOND, John , BRITT, Jeffrey, C. , KELLER, Bernd, P. , EMERSON, David, T. , BERGMANN, Michael, John , CABALU, Jasper, S.
IPC分类号： H01L33/50
摘要： A method for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs, typically on a wafer, and coating the LEDs with a conversion material so that at least some light from the LEDs passes through the conversion material and is converted. The light emission from the LED chips comprises light from the conversion material, typically in combination with LED light. The emission characteristics of at least some of the LED chips is measured and at least some of the conversion material over the LEDs is removed to alter the emission characteristics of the LED chips. The invention is particularly applicable to fabricating LED chips on a wafer where the LED chips have light emission characteristics that are within a range of target emission characteristics. This target range can fall within an emission region on a CIE curve to reduce the need for binning of the LEDs from the wafer. The emission characteristics of the LED chips in the wafer can be tuned to the desired range by micro-machining the conversion material over the LEDs.

35. 发明申请

WO2008130823A1 TRANSPARENT OHMIC CONTACTS ON LIGHT EMITTING DIODES WITH CARRIER SUBSTRATES 审中-公开
标题翻译：具有载体基板的发光二极管的透明OHMIC接触
公开(公告)号：WO2008130823A1
公开(公告)日：2008-10-30
申请号：PCT/US2008/059390
申请日：2008-04-04
申请人： CREE, INC. , EDMOND, John, A. , SLATER, Jr, David, B. , BERGMANN, Michael, J.
发明人： EDMOND, John, A. , SLATER, Jr, David, B. , BERGMANN, Michael, J.
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/0079 , H01L33/20 , H01L33/22
摘要： A light emitting diode is disclosed that includes an active structure formed of at least p-type and n-type epitaxial layers of Group III nitride on a conductive carrier substrate. A conductive bonding system joins the active structure to the conductive carrier substrate. A first transparent ohmic contact is on the active structure adjacent the conductive carrier substrate, a second transparent ohmic contact is on the active structure opposite the conductive carrier substrate, and a third ohmic contact is on the conductive carrier substrate opposite from the active structure.
摘要翻译：公开了一种发光二极管，其包括由导电载体衬底上的III族氮化物的至少p型和n型外延层形成的有源结构。导电接合系统将有源结构连接到导电载体衬底。第一透明欧姆接触在与导电载体衬底相邻的有源结构上，第二透明欧姆接触在与导电载体衬底相对的有源结构上，并且第三欧姆接触位于与有源结构相反的导电载体衬底上。

36. 发明申请

WO2008130821A2 TRANSPARENT OHMIC CONTACTS ON LIGHT EMITTING DIODES WITH GROWTH SUBSTRATES 审中-公开
标题翻译：具有生长基底的发光二极管的透明OHMIC接触
公开(公告)号：WO2008130821A2
公开(公告)日：2008-10-30
申请号：PCT/US2008/059381
申请日：2008-04-04
申请人： CREE, INC. , EDMOND, John, A. , SLATER, JR, David, B. , BERGMANN, Michael, J.
发明人： EDMOND, John, A. , SLATER, JR, David, B. , BERGMANN, Michael, J.
IPC分类号： H01L33/00 , H01L33/22 , H01L33/42
CPC分类号： H01L33/42 , H01L33/0079 , H01L33/22
摘要： A light emitting diode is disclosed that includes a growth substrate, a substantially transparent ohmic contact on a first surface of the growth substrate, a Group III nitride, light-emitting active region on a second surface of the growth substrate, a p-type Group III nitride contact layer on the active region that transmits light generated in the active region, and a substantially transparent ohmic contact on the p-type contact layer,
摘要翻译：公开了一种发光二极管，其包括生长衬底，生长衬底的第一表面上的基本上透明的欧姆接触，生长衬底的第二表面上的III族氮化物，发光有源区，p型组 III族氮化物接触层，其在有源区域上透射在有源区域中产生的光，以及在p型接触层上实质上是透明的欧姆接触，

37. 发明申请

WO2006036582A1 HIGH OUTPUT SMALL AREA GROUP III NITRIDE LEDS 审中-公开
标题翻译：高输出小区III类氮化物LED
公开(公告)号：WO2006036582A1
公开(公告)日：2006-04-06
申请号：PCT/US2005/033013
申请日：2005-09-15
申请人： CREE, INC. , EDMOND, John, Adam
发明人： EDMOND, John, Adam
IPC分类号： H01L33/00 , H01L27/15
CPC分类号： H01L33/405 , H01L33/20 , H01L33/32 , H01L2224/48247 , H01L2924/181 , H01L2924/00012
摘要： A light emitting diode is disclosed with advantageous output on a per unit area basis. The diode includes an area of less than 100,000 square microns, operates at a forward voltage of less than 4.0 volts, produces a radiant flux of at least 24 milliwatts at 20 milliamps drive current, and emits at a dominant wavelength between about 395 and 540 nanometers.
摘要翻译：公开了一种以每单位面积为基础的有利输出的发光二极管。二极管包括小于100,000平方微米的面积，在小于4.0伏特的正向电压下工作，在20毫安驱动电流下产生至少24毫瓦的辐射通量，并以约395和540纳米之间的主波长发射。

38. 发明申请

WO2006036566A1 HIGH EFFICIENCY GROUP III NITRIDE-SILICON CARBIDE LIGHT EMITTING DIODE 审中-公开
标题翻译：高效III族氮化硅碳化硅发光二极管
公开(公告)号：WO2006036566A1
公开(公告)日：2006-04-06
申请号：PCT/US2005/032896
申请日：2005-09-15
申请人： CREE, INC. , EDMOND, John, Adam , BHARATHAN, Jayesh , SLATER, David, Beardsley, Jr.
发明人： EDMOND, John, Adam , BHARATHAN, Jayesh , SLATER, David, Beardsley, Jr.
IPC分类号： H01L33/00
CPC分类号： H01L33/36 , H01L33/007
摘要： A method and resulting structures are disclosed for fabricating a high efficiency high extraction light emitting diode suitable for packaging. The method includes the steps of adding a light emitting active portion of wide-bandgap semiconductor material to a conductive silicon carbide substrate, joining the added active portion to a conductive sub-mounting structure, and removing a portion of the silicon carbide substrate opposite the added active portion to thereby reduce the overall thickness of the joined substrate, active portion and sub-mounting structure. The resulting the sub-mounting structure can be joined to a lead frame with the active portion positioned between the silicon carbide substrate and the sub-mounting structure to thereby use the sub-mounting structure to separate the active portion from the lead frame and avoid undesired electrical contact between the active portion and the lead frame.
摘要翻译：公开了用于制造适用于包装的高效率高抽提发光二极管的方法和结果。该方法包括以下步骤：将宽带隙半导体材料的发光有源部分添加到导电碳化硅基板，将添加的有源部分接合到导电子安装结构，以及将与添加的相邻的碳化硅基板相对的一部分从而减小接合基板，有源部分和副安装结构的整体厚度。所产生的子安装结构可以被连接到引线框架，其中有源部分位于碳化硅基板和子安装结构之间，从而使用子安装结构将活动部分与引线框架分开，并避免不期望的有源部分和引线框架之间的电接触。

39. 发明申请

WO2005020308A1 LOCALIZED ANNEALING OF METAL-SILICON CARBIDE OHMIC CONTACTS AND DEVICES SO FORMED 审中-公开
标题翻译：金属硅碳化物接触的局部化退火和形成的器件
公开(公告)号：WO2005020308A1
公开(公告)日：2005-03-03
申请号：PCT/US2004/026210
申请日：2004-08-12
申请人： CREE, INC. , SLATER, David, B, Jr. , EDMOND, John, A. , DONOFRIO, Matthew
发明人： SLATER, David, B, Jr. , EDMOND, John, A. , DONOFRIO, Matthew
IPC分类号： H01L21/28
CPC分类号： H01L33/40 , H01L21/0272 , H01L21/0485 , H01L21/2636 , H01L21/268 , H01L33/0095 , H01L33/34 , H01L2924/0002 , H01L2924/00
摘要： A contact for a semiconductor device can be formed by forming a metal on a Silicon Carbide (SiC) substrate and annealing an interface location of the metal and the SiC substrate to form a metal-SiC material thereat and avoiding annealing at a location on the SiC substrate to avoid forming the metal-SiC material thereat.
摘要翻译：半导体器件的接触可以通过在碳化硅（SiC）衬底上形成金属并退火金属和SiC衬底的界面位置以形成金属SiC材料，并避免在SiC上的位置退火而形成衬底以避免在其上形成金属-SiC材料。

40. 发明申请

WO2004075307A3 GROUP III NITRIDE CONTACT STRUCTURES FOR LIGHT EMITTING DEVICES 审中-公开
公开(公告)号：WO2004075307A3
公开(公告)日：2004-09-02
申请号：PCT/US2004/001518
申请日：2004-01-21
申请人： CREE, INC. , EDMOND, John, Adam , DOVERSPIKE, Kathleen, Marie , BERGMANN, Nichael, John , KONG, Hua-Shuang
发明人： EDMOND, John, Adam , DOVERSPIKE, Kathleen, Marie , BERGMANN, Nichael, John , KONG, Hua-Shuang
IPC分类号： H01L33/00
摘要： A superlattice contact structure for light emitting devices includes a plurality of contiguous p-type Group III nitride layers. The contact structure may be formed of p-type indium nitride, aluminum indium nitride, or indium gallium nitride. Also disclosed is a light emitting device that incorporates the disclosed contact structures.

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