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    • 24. 发明申请
    • SILICON NITRIDE SINTER AND PROCESS FOR PRODUCING THE SAME
    • 硅氮化硅及其制造方法
    • WO1996020144A1
    • 1996-07-04
    • PCT/JP1995002679
    • 1995-12-26
    • SUMITOMO ELECTRIC INDUSTRIES, LTD.NAKAHATA, SeijiTAKEUCHI, HisaoYAMAKAWA, Akira
    • SUMITOMO ELECTRIC INDUSTRIES, LTD.
    • C04B35/591
    • C04B35/591
    • A dense, high-strength silicon nitride (Si3N4) sinter produced by reaction sintering with a shortened nitridation time and an improved productivity. The sinter has an unpaired electron concentration of 10 -10 /cm and is obtained by the reaction sintering of a silicon powder having an unpaired electron concentration of 10 -10 /cm and obtained by annealing a commercially available silicon powder in an atmosphere of other than nitrogen at a temperature of 300-800 DEG C for 3-5 hours. The production process comprises conducting the reaction sintering by mixing the starting powder with a sintering aid and a nitrogen pore forming agent comprising an element having a valency of, especially, +1, to +3 and satisfying the following relationship between RM (the radius of covalent bond of the element) and RSi (the radius of covalent bond of silicon): (RM-RSi)/RSi
    • 通过反应烧结制备的致密的高强度氮化硅(Si 3 N 4)烧结体,其具有缩短的氮化时间和提高的生产率。 该烧结体具有不成对的电子浓度为10 15 -10 21 / cm 3,并且是通过使不成对电子浓度为10 15 -10 20 / cm 3的硅粉的反应烧结获得的 3,通过在氮气气氛下在300-800℃的温度下将市售的硅粉末退火3-5小时获得。 该制备方法包括通过将起始粉末与烧结助剂混合进行反应烧结,以及包含具有特别是+1至+3的元素的氮成孔剂,并满足RM(半径 元素的共价键)和RSi(硅的共价键的半径):(RM-RSi)/ RSi <0.5。