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    • 21. 发明申请
    • OPTICALLY PUMPED SOLID-STATE LASER AND LIGHTING SYSTEM COMPRISING SAID SOLID-STATE LASER
    • 包括固体激光器的光学抽吸固体激光和照明系统
    • WO2010109365A1
    • 2010-09-30
    • PCT/IB2010/051092
    • 2010-03-15
    • KONINKLIJKE PHILIPS ELECTRONICS N.V.PHILIPS INTELLECTUAL PROPERTY & STANDARDS GMBHWEICHMANN, UlrichRONDA, Cornelis, R.OPITZ, JoachimSCHMIDT, Peter, J.
    • WEICHMANN, UlrichRONDA, Cornelis, R.OPITZ, JoachimSCHMIDT, Peter, J.
    • H01S3/16
    • H01S3/16H01S3/1605H01S3/1606H01S3/1613H01S3/1615H01S3/1616H01S3/163H01S3/164
    • The invention relates to a solid-state laser device (1) comprising a gain medium (10) essentially having a main phase of a solid state host material (15) which is doped with rare-earth ions. According to the invention at least a portion of the rare-earth ions are Ce 3+ -ions (19) with at least one 4f-state (16, 17) and at least one 5d-band (18) energetically located between the highest valence state and the lowest conduction state of the host material (15), wherein : the highest 4f-state (17) and the bottom edge of the 5d-band (18) have a first energy- level difference (Δ1), and - the lowest 4f-state (16) and the upper edge of the 5d-band (18) have a second energy-level difference (Δ2); and wherein the host material (15) is selected such that the resulting gain medium (10) has an energy range (20) devoid of unoccupied states for disabling excited state absorption, the energy range (20) being located between : a lower energy (21) which is by the value of the first energy level difference (Δ1) above the bottom edge of the 5d-band (18) and - a higher energy (22) which is by the value of the second energy level difference possible host materials are Y 3 Alga 4 O 12 , Ca 3 Sc 2 Si 3 O 12 .(Δ2) above the upper edge of the 5d-band (18). The invention further relates to a corresponding lighting system comprising at least one solid-state laser device (1).
    • 本发明涉及一种固态激光器件(1),其包括基本上具有掺杂有稀土离子的固态主体材料(15)的主相的增益介质(10)。 根据本发明,稀土离子的至少一部分是具有至少一个4f状态(16,17)和至少一个5d带(18)的Ce 3+(19),其能量位于最高价态之间 和主体材料(15)的最低导通状态,其中:最高4f状态(17)和5d带(18)的底边具有第一能级差(α1),并且 最低4f状态(16),并且5d带(18)的上边缘具有第二能级差(α2); 并且其中选择所述主体材料(15)使得所得到的增益介质(10)具有不具有用于禁用激发态吸收的空闲状态的能量范围(20),所述能量范围(20)位于:较低能量 21),其是通过在5d频带(18)的底边缘之上的第一能级差(α1)的值和 - 通过第二能级差可能主机的值的较高能量(22) 材料是在5d带(18)的上边缘上方的Y3 Alga4 O12,Ca3Sc2Si3O12(?2)。 本发明还涉及一种包括至少一个固体激光装置(1)的对应照明系统。