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21. 发明申请

WO2012096961A1 SUBSTRATE IDENTIFICATION AND TRACKING THROUGH SURFACE REFLECTANCE 审中-公开
标题翻译：通过表面反射识别和跟踪基板
公开(公告)号：WO2012096961A1
公开(公告)日：2012-07-19
申请号：PCT/US2012/020783
申请日：2012-01-10
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , RIORDON, Benjamin, B. , LOW, Russell, J.
发明人： RIORDON, Benjamin, B. , LOW, Russell, J.
IPC分类号： G06K9/00 , H01L31/18 , H04N7/32
CPC分类号： H01L31/0682 , G06K9/00577 , H01L31/1876 , Y02E10/547 , Y02P70/521
摘要： A method of identifying Individual silicon substrates, and particularly solar cells, is disclosed. Every solar cell possesses a unique set of optical properties. The method identifies these properties and stores them in a database, where they can be associated to a particular solar cell. Unlike conventional tracking techniques, the present method requires no dedicated space on the surface of the silicon substrate. This method allows substrates to be tracked through the manufacturing process, as well as throughout the life of the substrate.
摘要翻译：公开了一种识别单个硅衬底，特别是太阳能电池的方法。每个太阳能电池都具有独特的光学特性。该方法识别这些属性并将其存储在数据库中，并将其与特定的太阳能电池相关联。与传统跟踪技术不同，本方法不需要硅衬底表面上的专用空间。该方法允许通过制造过程以及在基板的整个寿命期间跟踪基板。

22. 发明申请

WO2012044533A1 INTEGRATED SHADOW MASK/CARRIER FOR PATTERN ION IMPLANTATION 审中-公开
标题翻译：集成阴影掩模/载体为模式离子植入
公开(公告)号：WO2012044533A1
公开(公告)日：2012-04-05
申请号：PCT/US2011/052970
申请日：2011-09-23
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , BATEMAN, Nicholas, P., T. , DANIELS, Kevin, M. , GUPTA, Atul , LOW, Russell, J. , RIORDON, Benjamin, D. , MITCHELL, Robert, J. , ANELLA, Steven, M.
发明人： BATEMAN, Nicholas, P., T. , DANIELS, Kevin, M. , GUPTA, Atul , LOW, Russell, J. , RIORDON, Benjamin, D. , MITCHELL, Robert, J. , ANELLA, Steven, M.
IPC分类号： H01L21/677 , H01J37/317 , H01L21/687
CPC分类号： H01L21/677 , H01J37/3171 , H01J2237/31711 , H01L21/68735 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An improved, lower cost method of processing substrates, such as to create solar cells is disclosed. In addition, a modified substrate carrier is disclosed. The carriers typically used to carry the substrates are modified so as to serve as shadow masks for a patterned implant. In some embodiments, various patterns cart be created using the carriers such that different process steps can be performed on the substrate by changing the carrier or the position with the carrier, in addition, since the alignment of the substrate to the carrier is critical, the carrier may contain alignment features to insure that the substrate is positioned properly on the carrier, in some embodiments, gravity is used to held the substrate on the carrier, and therefore, the ions are directed so that the ion beam travels upward toward the bottom side of the carrier.
摘要翻译：公开了一种改进的，低成本的处理衬底的方法，例如制造太阳能电池。此外，公开了改进的基板载体。通常用于承载衬底的载体被修改为用作图案化植入物的荫罩。在一些实施例中，可以使用载体创建各种图案，使得可以通过用载体改变载体或位置来在基板上执行不同的工艺步骤，此外，由于基板与载体的对准是关键的，因此载体可以包含对准特征以确保基底适当地定位在载体上，在一些实施例中，重力用于将基底保持在载体上，因此离子被引导以使得离子束向下朝向底侧的承运人。

23. 发明申请

WO2010088503A2 A TECHNIQUE FOR PROCESSING A SUBSTRATE 审中-公开
标题翻译：加工基材的技术
公开(公告)号：WO2010088503A2
公开(公告)日：2010-08-05
申请号：PCT/US2010/022564
申请日：2010-01-29
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES , LOW, Russell, J. , WEAVER, William, T. , BATEMAN, Nicholas, P.T. , GUPTA, Atul
发明人： LOW, Russell, J. , WEAVER, William, T. , BATEMAN, Nicholas, P.T. , GUPTA, Atul
IPC分类号： H01L21/265 , H01L21/266
CPC分类号： H01L21/266 , H01J37/09 , H01J37/3171 , H01J2237/0458 , H01J2237/31711 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate. The method may comprise ion implanting a substrate disposed downstream of the ion source with ions generated in an ion source; and disposing a first portion of a mask in front of the substrate to expose the first portion of the mask to the ions, the mask being supported by the first and second mask holders, the mask further comprising a second portion wound in the first mask holder.
摘要翻译：公开了一种用于处理衬底的改进技术。在一个特定的示例性实施例中，该技术可以被实现为用于处理衬底的方法。该方法可以包括利用离子源中产生的离子离子注入设置在离子源下游的衬底; 和在所述衬底的正面上设置掩模的第一部分以暴露所述掩模的离子的第一部分，所述掩模由所述第一和第二荫罩支持件支持，所述掩模还包括卷绕在所述第一掩模保持器的第二部分

24. 发明申请

WO2010085439A3 SELF-ALIGNED SELECTIVE EMITTER FORMED BY COUNTERDOPING 审中-公开
公开(公告)号：WO2010085439A3
公开(公告)日：2010-07-29
申请号：PCT/US2010/021354
申请日：2010-01-19
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES , BLAKE, Julian, G. , LOW, Russell, J.
发明人： BLAKE, Julian, G. , LOW, Russell, J.
IPC分类号： H01L31/042 , H01L21/265
摘要： An improved method of doping substrates, such as a solar cell, is disclosed. Conductors, such as metai lines, are often deposited on the surface of a substrate. In some embodiments, the conductivity of the substrate beneath the conductors is different than the conductivity of other regions of the substrate. Therefore, the conductors can serve as the mask for a subsequent blanket doping, which changes the conductivity of the surface of the substrate, except beneath the conductors. In some embodiments, an initia! blanket doping is performed prior to the deposition of the conductors to create an initial uniformly doped region.

25. 发明申请

WO2008136858A3 TECHNIQUES FOR REMOVING MOLECULAR FRAGMENTS FROM AN ION IMPLANTER 审中-公开
标题翻译：从离子植入物中去除分子碎片的技术
公开(公告)号：WO2008136858A3
公开(公告)日：2009-04-30
申请号：PCT/US2007084102
申请日：2007-11-08
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , HATEM CHRISTOPHER R , SCHEUER JAY THOMAS , LOW RUSSELL J , EVANS MORGAN D , ENGLAND JONATHAN GERALD
发明人： HATEM CHRISTOPHER R , SCHEUER JAY THOMAS , LOW RUSSELL J , EVANS MORGAN D , ENGLAND JONATHAN GERALD
IPC分类号： H01J7/18 , C01B3/00 , H01J27/02 , H01J37/317
CPC分类号： C23C14/48 , C01B3/0026 , C01B3/0031 , C01B3/0036 , C01B3/0047 , C01B3/0068 , C23C14/564 , H01J37/08 , H01J37/3171 , H01J2237/022 , H01J2237/31705 , Y02E60/327
摘要： Techniques for removing molecular fragments from an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for removing molecular fragments from an ion implanter. The apparatus may comprise a supply mechanism configured to couple to an ion source chamber and to supply a feed material to the ion source chamber. The apparatus may also comprise one or more hydrogen-absorbing materials placed in a flow path of the feed material, to prevent at least one portion of hydrogen-containing molecular fragments in the feed material from entering the ion source chamber.
摘要翻译：公开了从离子注入机去除分子碎片的技术。在一个特定的示例性实施例中，这些技术可以被实现为用于从离子注入机去除分子碎片的装置。该装置可以包括配置成耦合到离子源室并且将进料材料供应到离子源室的供给机构。该装置还可以包括放置在进料材料的流动路径中的一种或多种吸氢材料，以防止进料中至少一部分含氢分子碎片进入离子源室。

26. 发明申请

WO2009026340A3 INSULATED CONDUCTING DEVICE WITH MULTIPLE INSULATION SEGMENTS 审中-公开
标题翻译：具有多个绝缘部分的绝缘导体装置
公开(公告)号：WO2009026340A3
公开(公告)日：2009-04-23
申请号：PCT/US2008073674
申请日：2008-08-20
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , TEKLETSADIK KASEGN D , KRAUSE STEPHEN E , HERMANSON ERIC D , LOW RUSSELL J
发明人： TEKLETSADIK KASEGN D , KRAUSE STEPHEN E , HERMANSON ERIC D , LOW RUSSELL J
IPC分类号： H01B17/56 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/09 , H01J2237/2001 , H01J2237/26
摘要： Insulated conducting devices and related methods are disclosed. An insulated conducting device for a voltage structure comprises: a conductor connected to a voltage; and multiple insulation segments enclosing the conductor, the multiple insulation segments interfacing with one another.
摘要翻译：公开了绝缘导电装置及相关方法。一种用于电压结构的绝缘导电装置包括：连接到电压的导体; 以及包围导体的多个绝缘段，多个绝缘段彼此接合。

27. 发明申请

WO2009026340A2 INSULATED CONDUCTING DEVICE WITH MULTIPLE INSULATION SEGMENTS 审中-公开
标题翻译：带有多个绝缘部分的绝缘导电装置
公开(公告)号：WO2009026340A2
公开(公告)日：2009-02-26
申请号：PCT/US2008/073674
申请日：2008-08-20
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , TEKLETSADIK, Kasegn, D. , KRAUSE, Stephen, E. , HERMANSON, Eric, D. , LOW, Russell, J.
发明人： TEKLETSADIK, Kasegn, D. , KRAUSE, Stephen, E. , HERMANSON, Eric, D. , LOW, Russell, J.
IPC分类号： H01B17/56 , H01J37/31
CPC分类号： H01J37/3171 , H01J37/09 , H01J2237/2001 , H01J2237/26
摘要： Insulated conducting devices and related methods are disclosed. An insulated conducting device for a voltage structure comprises: a conductor connected to a voltage; and multiple insulation segments enclosing the conductor, the multiple insulation segments interfacing with one another.
摘要翻译：公开了绝缘导电装置和相关方法。一种用于电压结构的绝缘导电装置，包括：连接到电压的导体; 以及包围导体的多个绝缘段，多个绝缘段彼此连接。

28. 发明申请

WO2008086066A2 POWER SUPPLY FOR AN ION IMPLANTATION SYSTEM 审中-公开
标题翻译：用于离子植入系统的电源
公开(公告)号：WO2008086066A2
公开(公告)日：2008-07-17
申请号：PCT/US2008/050062
申请日：2008-01-03
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , LUBICKI, Piotr, R. , LOW, Russell, J. , KRAUSE, Stephen, E. , HERMANSON, Eric
发明人： LUBICKI, Piotr, R. , LOW, Russell, J. , KRAUSE, Stephen, E. , HERMANSON, Eric
IPC分类号： H02M7/10
CPC分类号： H02M7/103
摘要： A power supply system for an ion implantation system. In one particular exemplary embodiment, the system may be realized as a power supply system that includes a low frequency power inverter, a stack driver and a high voltage power generation unit that receives source power from the power inverter. The high voltage generation unit may include a high voltage transformer for providing an output power that is multiplied to a desired output level and delivered to an input terminal of an ion beam accelerator. The power supply system may also include a dielectric enclosure that encases at least a portion of the high voltage power generation unit, thereby preventing variation in the break down strength of the internal components.
摘要翻译：一种用于离子注入系统的电源系统。在一个特定示例性实施例中，该系统可以被实现为包括低功率逆变器，堆栈驱动器和从电力逆变器接收电力源的高压发电单元的电源系统。高电压生成单元可以包括高压变压器，用于提供乘以期望输出电平并被输送到离子束加速器的输入端的输出功率。供电系统还可以包括封装高压发电单元的至少一部分的电介质外壳，从而防止内部组件的分解强度的变化。

29. 发明申请

WO2006084143A8 WAFER-SCANNING ION IMPLANTER HAVING FAST BEAM DEFLECTION APPARATUS FOR BEAM GLITCH RECOVERY 审中-公开
标题翻译：具有快速光束偏转装置的波束扫描离子植绒装置用于光束恢复
公开(公告)号：WO2006084143A8
公开(公告)日：2008-02-14
申请号：PCT/US2006003863
申请日：2006-02-03
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , LOW RUSSELL J , ANGEL GORDON C
发明人： LOW RUSSELL J , ANGEL GORDON C
IPC分类号： H01J37/317 , H01J37/147 , H01J37/304
CPC分类号： H01J37/304 , H01J37/147 , H01J37/3171 , H01J2237/043 , H01J2237/15 , H01J2237/1501 , H01J2237/20228 , H01J2237/3045 , H01J2237/30472
摘要： An analyzer module of an ion implanter includes beam deflection apparatus adjacent to a resolving opening from which a terminal ion beam portion of an ion beam emanates. In response to a beam deflection voltage of a first value of substantially zero volts in a first operating condition, the beam deflection apparatus directs a source ion beam portion of the ion beam toward the resolving opening to generate the terminal ion beam portion. When the beam deflection voltage has a high second value in a second operating condition, the beam deflection apparatus directs the species of the source ion beam portion away from the resolving opening such that the terminal ion beam portion is substantially extinguished. Beam control circuitry is operative during the second operating condition to transition the ion implanter to the first operating condition by rapidly switching the beam deflection voltage from the second value to the first value. An implantation method employs the features of the implanter to recover from glitches during implantation and thereby improve the yield of implanted wafers.
摘要翻译：离子注入机的分析器模块包括与分离开口相邻的光束偏转装置，离子束的末端离子束部分从该分离开口发射。响应于在第一操作条件下基本为零伏的第一值的光束偏转电压，光束偏转装置将离子束的源离子束部分引向分辨开口以产生端子离子束部分。当光束偏转电压在第二操作条件下具有高的第二值时，光束偏转装置引导源离子束部分的种类远离分辨开口，使得末端离子束部分基本上熄灭。光束控制电路在第二操作条件期间操作，以通过将光束偏转电压从第二值快速切换到第一值来将离子注入机转换到第一操作状态。植入方法采用注入机的特征从植入期间的毛刺恢复，从而提高植入晶片的产量。

30. 发明申请

WO2012024173A3 MECHANISM AND METHOD FOR ALIGNING A WORKPIECE TO A SHADOW MASK 审中-公开
公开(公告)号：WO2012024173A3
公开(公告)日：2012-02-23
申请号：PCT/US2011/047528
申请日：2011-08-12
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , WEAVER, William, T. , LOW, Russell, J. , ANELLA, Steven, M. , MITCHELL, Robert, J.
发明人： WEAVER, William, T. , LOW, Russell, J. , ANELLA, Steven, M. , MITCHELL, Robert, J.
IPC分类号： H01J37/20 , H01J37/317
摘要： A workpiece support (300) is disclosed in which the platen (310), and thus the workpiece (320), can be tilted about at least two axis (318, 345), which allows gravity to align the workpiece (330) with a shadow mask (320) in two orthogonal directions. In some embodiments, the workpiece support utilizes an axis of rotation that is orthogonal to the surface of the workpiece, in conjunction with a second axis that is parallel to the surface of the workpiece. Additionally, a method of aligning the workpiece using this workpiece support is also disclosed. Further, the workpiece support can be utilized to remove the workpiece from the support after implantation with an ion beam (350) is completed.

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