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11. 发明申请

WO2011013523A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：WO2011013523A1
公开(公告)日：2011-02-03
申请号：PCT/JP2010/062029
申请日：2010-07-12
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , YAMAZAKI, Shunpei , SAKATA, Junichiro , OHARA, Hiroki , KUWABARA, Hideaki
发明人： YAMAZAKI, Shunpei , SAKATA, Junichiro , OHARA, Hiroki , KUWABARA, Hideaki
IPC分类号： H01L29/786
CPC分类号： H01L27/3262 , G06F1/163 , H01L21/02614 , H01L27/1218 , H01L27/1222 , H01L27/1225 , H01L29/04 , H01L29/24 , H01L29/66969 , H01L29/78603 , H01L29/7869 , H01L29/78696 , H04B1/16
摘要： One object is to provide a semiconductor device with a structure which enables reduction in parasitic capacitance sufficiently between wirings. In a bottom-gate type thin film transistor including a stacked layer of a first layer which is a metal thin film oxidized partly or entirely and an oxide semiconductor layer, the following oxide insulating layers are formed together: an oxide insulating layer serving as a channel protective layer which is over and in contact with a part of the oxide semiconductor layer overlapping with a gate electrode layer; and an oxide insulating layer which covers a peripheral portion and a side surface of the stacked oxide semiconductor layer.
摘要翻译：一个目的是提供具有能够在布线之间充分降低寄生电容的结构的半导体器件。在包括作为部分或全部氧化的金属薄膜的第一层的堆叠层和氧化物半导体层的底栅型薄膜晶体管中，形成以下氧化物绝缘层：作为沟道的氧化物绝缘层与氧化物半导体层的与栅电极层重叠的部分结合并接触的保护层; 以及覆盖层叠的氧化物半导体层的周边部分和侧面的氧化物绝缘层。

12. 发明申请

WO2007100020A1 LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, LIGHTING DEVICE, AND ELECTRONIC APPLIANCE 审中-公开
标题翻译：发光元件，发光装置，照明装置和电子设备
公开(公告)号：WO2007100020A1
公开(公告)日：2007-09-07
申请号：PCT/JP2007/053843
申请日：2007-02-22
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , OHARA, Hiroki , SAKATA, Junichiro , NAKAMURA, Yasuo
发明人： OHARA, Hiroki , SAKATA, Junichiro , NAKAMURA, Yasuo
IPC分类号： H05B33/14 , C09K11/00 , C09K11/54 , C09K11/56 , C09K11/59 , C09K11/62 , C09K11/64 , C09K11/78 , C09K11/84 , C09K11/88 , H01L51/50
CPC分类号： C09K11/612 , H01L51/5012 , H05B33/145
摘要： The light-emitting layer contains a light-emitting base including a chalcogenide compound, and a light-emitting center including two kinds of halogen compounds. The chalcogenide compound contains a chalcogen element and an element selected from elements belonging to Group 2 to Group 13 of the periodic table, and the halogen compound contains a halogen element and an element selected from typical metal elements, transition metal elements, or rare earth elements.
摘要翻译：发光层含有包含硫属化合物的发光基质和包含两种卤素化合物的发光中心。硫族化合物含有硫属元素和选自元素周期表第2族至第13族的元素的元素，卤素化合物含有卤素元素和选自典型金属元素，过渡金属元素或稀土元素的元素。

13. 发明申请

WO2010103935A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：WO2010103935A1
公开(公告)日：2010-09-16
申请号：PCT/JP2010/053015
申请日：2010-02-19
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , OHARA, Hiroki , SASAKI, Toshinari
发明人： OHARA, Hiroki , SASAKI, Toshinari
IPC分类号： H01L29/786 , C01G15/00 , G09F9/30 , H01L21/28 , H01L21/316 , H01L21/336 , H01L21/363 , H01L21/768 , H01L23/522 , H01L29/417
CPC分类号： H01L29/66969 , C01G15/006 , C01G45/006 , C01G49/009 , C01G51/006 , C01G53/006 , C01P2002/52 , C01P2006/40 , H01L21/02164 , H01L21/02178 , H01L21/02183 , H01L21/02266 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/441 , H01L21/477 , H01L27/1225 , H01L29/66742 , H01L29/7869
摘要： An object is to provide a semiconductor device including a semiconductor element which has favorable characteristics. A manufacturing method of the present invention includes the steps of: forming a first conductive layer which functions as a gate electrode over a substrate; forming a first insulating layer to cover the first conductive layer; forming a semiconductor layer over the first insulating layer so that part of the semiconductor layer overlaps with the first conductive layer; forming a second conductive layer to be electrically connected to the semiconductor layer; forming a second insulating layer to cover the semiconductor layer and the second conductive layer; forming a third conductive layer to be electrically connected to the second conductive layer; performing first heat treatment after forming the semiconductor layer and before forming the second insulating layer; and performing second heat treatment after forming the second insulating layer.
摘要翻译：目的是提供一种具有有利特性的半导体元件的半导体器件。本发明的制造方法包括以下步骤：在衬底上形成用作栅电极的第一导电层; 形成第一绝缘层以覆盖所述第一导电层; 在所述第一绝缘层上形成半导体层，使得所述半导体层的一部分与所述第一导电层重叠; 形成与半导体层电连接的第二导电层; 形成覆盖半导体层和第二导电层的第二绝缘层; 形成与第二导电层电连接的第三导电层; 在形成半导体层之后并在形成第二绝缘层之前进行第一热处理; 以及在形成所述第二绝缘层之后进行第二热处理。

14. 发明申请

WO2012073844A1 OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：氧化物半导体膜和半导体器件
公开(公告)号：WO2012073844A1
公开(公告)日：2012-06-07
申请号：PCT/JP2011/077292
申请日：2011-11-21
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , YAMAZAKI, Shunpei , TSUBUKU, Masashi , AKIMOTO, Kengo , OHARA, Hiroki , HONDA, Tatsuya , OMATA, Takatsugu , NONAKA, Yusuke , TAKAHASHI, Masahiro , MIYANAGA, Akiharu
发明人： YAMAZAKI, Shunpei , TSUBUKU, Masashi , AKIMOTO, Kengo , OHARA, Hiroki , HONDA, Tatsuya , OMATA, Takatsugu , NONAKA, Yusuke , TAKAHASHI, Masahiro , MIYANAGA, Akiharu
IPC分类号： H01L21/363 , C01G15/00 , C23C14/08 , H01L29/786
CPC分类号： H01L29/78696 , H01L29/045 , H01L29/1033 , H01L29/247 , H01L29/7869 , H01L29/78693
摘要： An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.
摘要翻译：提供了具有更稳定的导电性的氧化物半导体膜。此外，通过使用氧化物半导体膜提供具有稳定的电特性和高可靠性的半导体器件。氧化物半导体膜包括结晶区域，并且结晶区域包括其中a-b平面基本上平行于膜的表面并且c轴基本上垂直于膜的表面的晶体; 氧化物半导体膜具有稳定的导电性，并且相对于可见光，紫外线等的照射而言更加电稳定。通过使用这种用于晶体管的氧化物半导体膜，可以提供具有稳定电特性的高可靠性半导体器件。

15. 发明申请

WO2011105268A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：WO2011105268A1
公开(公告)日：2011-09-01
申请号：PCT/JP2011/053311
申请日：2011-02-09
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , YAMAZAKI, Shunpei , OHARA, Hiroki
发明人： YAMAZAKI, Shunpei , OHARA, Hiroki
IPC分类号： H01L29/786 , H01L21/336 , H01L21/425 , H01L21/8242 , H01L21/8247 , H01L27/108 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L21/02521 , H01L27/1225 , H01L29/66742 , H01L29/7869
摘要： It is an object to provide a highly reliable semiconductor device, a semiconductor device with low power consumption, a semiconductor device with high productivity, and a method for manufacturing such a semiconductor device. Impurities left remaining in an oxide semiconductor layer are removed without generating oxygen deficiency, and the oxide semiconductor layer is purified to have an extremely high purity. Specifically, after oxygen is added to the oxide semiconductor layer, heat treatment is performed on the oxide semiconductor layer to remove the impurities. In order to add oxygen, it is preferable to use a method in which oxygen having high energy is added by an ion implantation method, an ion doping method, or the like.
摘要翻译：本发明的目的是提供一种高度可靠的半导体器件，具有低功耗的半导体器件，高生产率的半导体器件及其制造方法。残留在氧化物半导体层中的杂质被除去而不产生氧缺陷，氧化物半导体层被纯化成具有非常高的纯度。具体地说，在向氧化物半导体层添加氧之后，对氧化物半导体层进行热处理以除去杂质。为了添加氧，优选使用通过离子注入法，离子掺杂法等添加具有高能量的氧的方法。

16. 发明申请

WO2008108254A1 LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DEVICE 审中-公开
标题翻译：发光元件和发光装置
公开(公告)号：WO2008108254A1
公开(公告)日：2008-09-12
申请号：PCT/JP2008/053455
申请日：2008-02-21
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , OHARA, Hiroki
发明人： OHARA, Hiroki
IPC分类号： H05B33/14
CPC分类号： H05B33/14 , C09K11/08
摘要： An object is to provide a light-emitting element and a light-emitting device each of which consumes less power and has high emission efficiency, high performance, and high reliability. A light-emitting element has an EL layer provided with a light-emitting layer, which includes an inorganic light-emitting material containing a mixed-valence compound, between a pair of electrode layers. When an element in a given compound has a plurality of valences, this element is in a state that is referred to as a mixed-valence state and this compound is referred to as a mixed-valence compound. The mixed-valence compound affects charge mobility and emission color, and a light-emitting device having such a light-emitting element consumes less power, has high reliability and high image quality, and emits various colors of light.
摘要翻译：本发明的目的是提供一种发光元件和发光装置，每个发光元件和发光器件消耗较少的功率并且具有高发光效率，高性能和高可靠性。发光元件具有在一对电极层之间设置有包含含有混合化合物的无机发光材料的发光层的EL层。当给定化合物中的元素具有多个价数时，该元素处于被称为混合价态的状态，该化合物被称为混合价化合物。混合化合物影响电荷迁移率和发光颜色，并且具有这种发光元件的发光器件消耗更少的功率，具有高可靠性和高图像质量，并且发出各种颜色的光。

17. 发明申请

WO2008075615A1 LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DEVICE 审中-公开
标题翻译：发光元件和发光装置
公开(公告)号：WO2008075615A1
公开(公告)日：2008-06-26
申请号：PCT/JP2007/074073
申请日：2007-12-07
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , OHARA, Hiroki
发明人： OHARA, Hiroki
IPC分类号： H01L51/50
CPC分类号： H01L51/5048 , H01L51/5278
摘要： An object is to provide a highly functional and reliable light-emitting element and light-emitting device with lower power consumption and high emission efficiency. The light-emitting element has an EL layer that has a stacked structure including a light-emitting element containing an organic compound and a functional layer having separate functions between a pair of electrode layers. In the light-emitting element including the functional layer and the light-emitting element containing an organic compound, a mixed-valence compound is contained in the functional layers. When an element in a compound has a plurality of valences, this element is in a state that is referred to as a mixed-valence state and this compound is referred to as a mixed-valence compound.
摘要翻译：本发明的目的是提供一种功能可靠的发光元件和具有较低功耗和高发光效率的发光元件。发光元件具有层叠结构的EL层，该层叠结构包括含有有机化合物的发光元件和在一对电极层之间具有分离功能的功能层。在包含功能层的发光元件和含有有机化合物的发光元件中，在功能层中含有混合化合物。当化合物中的元素具有多个价数时，该元素处于被称为混合价态的状态，该化合物被称为混合化合物。

18. 发明申请

WO2005019128A2 RADIATION-CURABLE LIQUID RESIN COMPOSITION 审中-公开
标题翻译：辐射固化液体树脂组合物
公开(公告)号：WO2005019128A2
公开(公告)日：2005-03-03
申请号：PCT/NL2004/000589
申请日：2004-08-20
申请人： DSM IP ASSESTS B.V. , JSR CORPORATION , TAKAHASHI, Atsuya , SHIGEMOTO, Takeo , KOMIYA, Zen , OHARA, Hiroki
发明人： TAKAHASHI, Atsuya , SHIGEMOTO, Takeo , KOMIYA, Zen , OHARA, Hiroki
IPC分类号： C03C25/00
CPC分类号： C09D175/16 , C03C25/106 , C08G18/672 , C08G18/8175 , Y10T428/2938 , C08G18/48
摘要： The invention relates to a radiation -curable liquid resin composition comprising: (A) 20-90 wt% of a urethane (meth)acrylate oligomer, and (B) 1-35 wt% of - a monomer shown by the following formula (1), wherein R 1 represents a hydrogen atom or a methyl group, R 2 and R 3 individually represent a hydrogen atom or an alkyl group having 1-4 carbon atoms, R 4 represents a hydrogen atom or a methyl group, and n represents an integer of 1-6, or - a monomer including a hydroxyl group.
摘要翻译：本发明涉及可辐射固化的液体树脂组合物，其包含：（A）20-90重量％的氨基甲酸酯（甲基）丙烯酸酯低聚物，和（B）1-35重量％的-α 由下式（1）表示的单体，其中R 1表示氢原子或甲基，R 2和R 3分别代表氢原子或具有1-4个碳原子的烷基，R 4表示氢原子或甲基，并且n表示1-6的整数，或 - 包含羟基的单体

19. 发明申请

WO2005087845A1 CURABLE LIQUID RESIN COMPOSITION 审中-公开
标题翻译：可固化液体树脂组合物
公开(公告)号：WO2005087845A1
公开(公告)日：2005-09-22
申请号：PCT/NL2005/000196
申请日：2005-03-15
申请人： DSM IP ASSETS B.V. , JSR CORPORATION , OHARA, Hiroki , FURUKAWA, Tsuyoshi? , SHIGEMOTO, Takeo , KOMIYA, Zen
发明人： OHARA, Hiroki , FURUKAWA, Tsuyoshi? , SHIGEMOTO, Takeo , KOMIYA, Zen
IPC分类号： C08G77/455
CPC分类号： C08G18/672 , C03C25/106 , C08L83/12 , C09D175/16 , C08G18/48 , C08L83/00
摘要： The invention aims to provide a curable liquid resin composition which produces a cured product having excellent surface slip characteristics and printability and has excellent liquid resin stability. This problem is solved by providing a curable liquid resin composition, comprising a silicone including an alkyl-modified siloxane unit and a polyether-modified siloxane unit.
摘要翻译：本发明的目的是提供一种固化液体树脂组合物，该组合物产生具有优异的表面滑动特性和可印刷性的固化产物，并且具有优异的液体树脂稳该问题通过提供一种可固化的液体树脂组合物来解决，该组合物包含含有烷基改性的硅氧烷单元和聚醚改性的硅氧烷单元的硅氧烷。

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