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    • 20. 发明申请
    • DUAL-BIT MEMORY DEVICE HAVING TRENCH ISOLATION MATERIAL DISPOSED NEAR BIT LINE CONTACT AREAS
    • 双位存储器件具有紧固隔离材料处理位置线接触区域
    • WO2008076978A1
    • 2008-06-26
    • PCT/US2007/087782
    • 2007-12-17
    • SPANSION LLPZHENG, Wei
    • ZHENG, Wei
    • H01L21/8247H01L27/115G11C16/04H01L21/762H01L21/768H01L27/02
    • H01L27/11568H01L27/0207H01L27/115
    • A dual-bit memory device is provided which includes trench isolation material disposed near bit line contact areas. For example, in one implementation a semiconductor memory device (600) is provided in which each memory cell can store two bits of information. The memory device comprises a substrate (554), first and second buried bit lines (501, 502) in the substrate (554), a first bit line contact (580) on the first buried bit line (501), a second bit line contact (582) on the second buried bit line (502), and an insulator region (576) disposed in the substrate (554) between the first buried bit line (501) and the second buried bit line (502). The insulator region (576) prevents a current from flowing between the first buried bit line (501) and the second buried bit line (502).
    • 提供了一种双位存储器件,其包括设置在位线接触区域附近的沟槽隔离材料。 例如,在一个实现中,提供半导体存储器件(600),其中每个存储器单元可以存储两位信息。 存储器件包括衬底(554),衬底(554)中的第一和第二掩埋位线(501,502),第一掩埋位线(501)上的第一位线接触(580),第二位线 在第二掩埋位线(502)上的接触(582)和设置在第一掩埋位线(501)和第二掩埋位线(502)之间的衬底(554)中的绝缘体区域(576)。 绝缘体区域(576)防止电流在第一掩埋位线(501)和第二掩埋位线(502)之间流动。