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    • 13. 发明申请
    • BELEUCHTUNGSSYSTEM FÜR EINE MIKROLITHOGRAPHIE-PROJEKTIONSBELICHTUNGSANLAGE
    • 照明系统,微光刻投射曝光系统
    • WO2008022680A1
    • 2008-02-28
    • PCT/EP2007/006463
    • 2007-07-20
    • CARL ZEISS SMT AGGRUNER, ToralfTOTZECK, Michael
    • GRUNER, ToralfTOTZECK, Michael
    • G03F7/20H05H7/04
    • G03F7/70566B82Y10/00G03F7/70008G21K2201/061H05G2/00
    • Ein Beleuchtungssystem (6) für eine Mikrolithographie-Projektionsbelichtungsanlage (1) hat eine EUV-Lichtquelle (7), die einen Ausgabestrahl (13) linear polarisierten EUV-Beleuchtungslichts erzeugt. Eine Beleuchtungsoptik (24, 25, 31, 37) führt den Ausgabestrahl (13) längs einer optischen Achse (20), wodurch ein Beleuchtungsfeld in einer Retikelebene (2) mit dem Ausgabestrahl (13) beleuchtet wird. Eine mindestens die EUV-Lichtquelle (7) umfassende Beleuchtungs-Untereinheit (7) des Beleuchtungssystems (6) hat eine Polarisations-Einstelleinrichtung (15, 18) zur Vorgabe einer definierten Polarisation des EUV-Ausgabestrahls (13) der Beleuchtungs-Untereinheit (7). Es resultiert ein Beleuchtungssystem, das flexibel an Polarisationsanforderungen der Anlage sowie der auf das Substrat bzw. den Wafer zu projizierenden Struktur angepasst werden kann.
    • 用于微光刻投射曝光设备(1)的照明系统(6)生成(7),其具有输出光束(13)的线偏振光EUV照明光的EUV光源。 的照明光学部件(24,25,31,37)开沿着光轴(20),由此在掩模母版平面(2)的照明场由所述输出光束(13)照射的输出光束(13)。 至少所述EUV光源(7)包括照射子单元(7)的照明系统(6)具有用于设置一个限定的照明子单元的EUV发射光束(13)的偏振的偏振调整装置(15,18)(7) , 结果是该系统的偏振要求的照明系统,并且可以被适配为在基板或晶片结构要投影灵活。
    • 15. 发明申请
    • OPTICAL SYSTEM OF A MICROLITHOGRAPHIC EXPOSURE SYSTEM
    • 微波曝光系统的光学系统
    • WO2007031544A1
    • 2007-03-22
    • PCT/EP2006/066332
    • 2006-09-13
    • CARL ZEISS SMT AGTOTZECK, MichaelBEDER, SusanneCLAUSS, WilfriedFELDMANN, HeikoKRÄHMER, DanielDODOC, Aurelian
    • TOTZECK, MichaelBEDER, SusanneCLAUSS, WilfriedFELDMANN, HeikoKRÄHMER, DanielDODOC, Aurelian
    • G03F7/20
    • G02B5/3083G02B27/286G03F7/70566G03F7/70966
    • An optical system, in particular an illumination system or a projection lens of a microlithographic exposure system, according to one aspect of the present invention has an optical system axis (OA) and at least one element group (200) consisting of three birefringent elements (211 ,212,213) each of which being made of optically uniaxial material and having an aspheric surface, wherein a first birefringent element (211 ) of said group has a first orientation of its optical crystal axis, a second birefringent element (212) of said group has a second orientation of its optical crystal axis, wherein said second orientation can be described as emerging from a rotation of said first orientation, said rotation not corresponding to a rotation around the optical system axis by an angle of 90° or an integer multiple thereof, and a third birefringent element (213) of said group has a third orientation of its optical crystal axis, wherein said third orientation can be described as emerging from a rotation of said second orientation said rotation not corresponding to a rotation around the optical system axis by an angle of 90° or an integer multiple thereof.
    • 根据本发明的一个方面的光学系统,特别是微光刻曝光系统的照明系统或投影透镜,具有光学系统轴(OA)和由三个双折射元件(200)组成的至少一个元件组(200) 211,212,213),其由光学单轴材料制成并具有非球面,其中所述组的第一双折射元件(211)具有其光学晶轴的第一取向,所述组的第二双折射元件(212) 具有其光学晶轴的第二取向,其中所述第二取向可以被描述为从所述第一取向的旋转出来,所述旋转不对应于围绕光学系统轴的旋转90°的角度或其整数倍 ,并且所述组的第三双折射元件(213)具有其光学晶轴的第三取向,其中所述第三取向可以被描述为从 所述第二方向的旋转,所述旋转不对应于围绕光学系统轴的旋转90°的角度或其整数倍。
    • 17. 发明申请
    • MICROLITHOGRAPHIC PROJECTION EXPOSURE METHOD
    • 微观投影曝光方法
    • WO2009024438A1
    • 2009-02-26
    • PCT/EP2008/059956
    • 2008-07-29
    • CARL ZEISS SMT AGTOTZECK, Michael
    • TOTZECK, Michael
    • G03F7/20
    • G03F7/70408
    • The invention concerns a microlithographic projection exposure method, wherein the method comprises the following steps: providing a substrate (210, 410), to which a light-sensitive first resist (220, 420) is at least partially applied, providing a microlithographic projection exposure apparatus, producing an auxiliary grating structure (240a, 430a) by means of the projection exposure apparatus, wherein said auxiliary grating structure (240a, 430a) is produced upstream of the first resist (220, 420) in the light propagation direction, providing a mask and projecting, using the auxiliary grating structure (240a, 430a), at least a part of the mask onto a region of the first resist (220, 420) by means of the projection exposure apparatus.
    • 本发明涉及一种微光刻投影曝光方法,其中所述方法包括以下步骤:提供至少部分施加光敏第一抗蚀剂(220,420)的衬底(210,410),提供微光刻投影曝光 装置,通过投影曝光装置产生辅助光栅结构(240a,430a),其中所述辅助光栅结构(240a,430a)在光传播方向上在第一抗蚀剂(220,420)的上游产生, 使用辅助光栅结构(240a,430a),通过投影曝光装置将掩模的至少一部分掩模投影到第一抗蚀剂(220,420)的区域上。
    • 18. 发明申请
    • OPTICAL SYSTEM, IN PARTICULAR ILLUMINATION DEVICE OR PROJECTION OBJECTIVE OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
    • 光学系统,特别是照明设备或投影微波投影曝光装置的目标
    • WO2008119794A1
    • 2008-10-09
    • PCT/EP2008/053847
    • 2008-03-31
    • CARL ZEISS SMT AGTOTZECK, MichaelGRUNER, ToralfFIOLKA, Damian
    • TOTZECK, MichaelGRUNER, ToralfFIOLKA, Damian
    • G03F7/20
    • G03F7/70566
    • The invention relates to an optical system, in particular an illumination device or a projection objective of a microlithographic projection exposure apparatus, comprising a polarization compensator (100, 200, 300, 400, 800, 900), which has at least one polarization-modifying partial element (110-140, 210-240, 310-340, 410-440, 810-840, 910-940), and a manipulator (150, 250, 722, 851-854, 951a-954a, 951b-954b), by means of which the position of the at least one partial element can be altered, wherein, in the optical system, at least one operating mode (501-504) can be set in which the intensity, over a region which belongs to a plane perpendicular to the optical axis (OA) and which can be illuminated with light from said light source, does not exceed 20% of the maximum intensity in said plane, and wherein the manipulator (150, 250, 722, 851-854, 951a-954a, 951b-954b) is arranged in said region.
    • 本发明涉及光学系统,特别是微光刻投影曝光装置的照明装置或投影物镜,该光学装置或投影物镜包括极化补偿器(100,200,300,400,800,900),其具有至少一个偏振修正 部分元件(110-140,210-240,310-340,410-440,810-840,910-940)和操纵器(150,250,722,851-854,951a-954a,951b-954b) ,借助于此可以改变至少一个部分元件的位置,其中在光学系统中,可以设置至少一个操作模式(501-504),其中强度在属于 垂直于光轴(OA)的并且可以用来自所述光源的光照射的平面不超过所述平面中最大强度的20%,并且其中所述操纵器(150,250,722,851-854,951a -954a,951b-954b)布置在所述区域中。