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1. 发明申请

WO2018167224A1 NITRATE PROCESS FOR MANUFACTURING TRANSITION METAL HYDROXIDE PRECURSORS 审中-公开
公开(公告)号：WO2018167224A1
公开(公告)日：2018-09-20
申请号：PCT/EP2018/056567
申请日：2018-03-15
申请人： UMICORE , UMICORE KOREA LTD.
发明人： PAULSEN, Jens , ROBERT, Eric , VANHOUTTE, Dirk , NELIS, Daniël , DE PALMA, Randy , KIM, Dae-Hyun
IPC分类号： C01G53/00
CPC分类号： C01G53/50 , C01B21/40 , C01B21/48 , C01C1/02 , C01D1/02 , C01D1/04 , C01G53/006 , C01P2002/70 , C01P2002/80 , C01P2004/61 , C01P2006/11 , C01P2006/40 , H01M4/485
摘要： This invention relates to an industrial process of manufacturing hydroxide precursor for lithium transition metal oxide used in secondary lithium ion batteries. More particularly, this process utilizes highly concentrated nitrate salts and is designed to mitigate waste production.

2. 发明申请

WO2016055910A1 CARBONATE PRECURSORS FOR LITHIUM NICKEL MANGANESE COBALT OXIDE CATHODE MATERIAL AND THE METHOD OF MAKING SAME 审中-公开
标题翻译：用于镍铬锰氧化物阴极材料的碳酸盐前体及其制备方法
公开(公告)号：WO2016055910A1
公开(公告)日：2016-04-14
申请号：PCT/IB2015/057491
申请日：2015-09-30
申请人： UMICORE , UMICORE KOREA LTD
发明人： HU, Jin , HONG, HeonPyo , PAULSEN, Jens , OH, JinDoo , NELIS, Daniël , ROBERT, Eric
IPC分类号： H01M4/525 , H01M4/505 , H01M4/485
CPC分类号： H01M4/1391 , C01G53/006 , C01G53/44 , C01P2002/52 , C01P2002/54 , C01P2002/72 , C01P2004/32 , C01P2004/51 , C01P2004/61 , C01P2006/11 , C01P2006/12 , C01P2006/40 , H01M4/0471 , H01M4/485 , H01M4/505 , H01M4/525 , H01M10/052 , Y02T10/7011
摘要： A method for producing a M-carbonate precursor of a Li-M oxide cathode material in a continuous reactor, wherein M=NixMnyCozAn, A being a dopant, with x>0, y>0,0≤z≤0.35, 0≤n≤0.02 and x+y+z+n=1, the method comprising the steps of: -providing a feed solution comprising Ni-, Mn-, Co-and A-ions, and having a molar metal content M" feed, -providing an ionic solution comprising either one or both of a carbonate and a bicarbonate solution, the ionic solution further comprising either one or both of Na-and K-ions, -providing a slurry comprising seeds comprising M'-ions and having a molar metal content M' seeds, wherein M'=Nix'Mny'Coz'A'n', A' being a dopant, with 0≤x'≤1, 0≤y'≤1, 0≤z'≤1, 0≤n'≤1 and x'+y'+z'+n'=1, and wherein the molar ratio M' seeds/M" feed is between 0.001 and 0.1, -mixing the feed solution, the ionic solution and the slurry in the reactor, thereby obtaining a reactive liquid mixture, -precipitating a carbonate onto the seeds in the reactive liquid mixture, thereby obtaining a reacted liquid mixture and the M-carbonate precursor, and -separating the M-carbonate precursor from the reacted liquid mixture.
摘要翻译：一种在连续反应器中制备Li-M氧化物阴极材料的M-碳酸酯前体的方法，其中M = NixMnyCozAn，A为掺杂剂，x> 0，y>0,0≤z≤0.35,0≤n ≤0.02，x + y + z + n = 1，该方法包括以下步骤：提供包含Ni-，Mn-，Co-和A-离子并且具有摩尔金属含量M“进料的进料溶液，提供包含碳酸盐和碳酸氢盐溶液中的一种或两种的离子溶液，所述离子溶液还包含Na-和K-离子中的一种或两种， - 提供包含包含M'离子并具有摩尔金属的种子的浆料含量M'种子，其中M'= Nix'Mny'Coz'A'n'，A'为掺杂剂，0≤x'≤1,0≤y'≤1,0≤z'≤1,0≤ n'≤1且x'+ y'+ z'+ n'= 1，其中M'种子/ M“进料的摩尔比为0.001至0.1，将进料溶液，离子溶液和浆料混合反应器，从而获得反应性液体混合物，将碳酸盐沉淀在反应性液体混合物中的种子上从而获得反应的液体混合物和M-碳酸酯前体，并将M-碳酸酯前体与反应的液体混合物分离。

3. 发明申请

WO2018167533A1 PRECURSORS FOR CATHODE MATERIAL WITH IMPROVED SECONDARY BATTERY PERFORMANCE AND METHOD TO PREPARE THE PRECURSORS 审中-公开
公开(公告)号：WO2018167533A1
公开(公告)日：2018-09-20
申请号：PCT/IB2017/051458
申请日：2017-03-14
申请人： UMICORE , UMICORE KOREA LTD.
发明人： PAULSEN, Jens , NELIS, Daniël , HU, Jin , ZHU, Liang , ROBERT, Eric
IPC分类号： H01M4/525 , H01M4/505 , C01G53/00 , H01M10/052
摘要： A crystalline precursor compound for manufacturing a lithium transition metal based oxide powder usable as an active positive electrode material in lithium-ion batteries, the precursor having a general formula M(O) x (OH) 2-x-y (CO 3 ) y , with 0 a Mn b Co c A d , A being a dopant, with 0.30≤a 2 /g and a tap density TD expressed in g/cm 3 , with a ratio BET/TD > 30.10 4 cm 5 /g 2 .

4. 发明申请

WO2008034578A1 PROCESS FOR THE PRODUCTION OF GERMANIUM-BEARING SILICON ALLOYS 审中-公开
标题翻译：用于生产锗 - 轴承硅合金的方法
公开(公告)号：WO2008034578A1
公开(公告)日：2008-03-27
申请号：PCT/EP2007/008091
申请日：2007-09-18
申请人： UMICORE , ROBERT, Eric , ZIJLEMA, Tjakko
发明人： ROBERT, Eric , ZIJLEMA, Tjakko
IPC分类号： C01B33/033 , C01B33/037 , C30B29/06 , C30B15/00
CPC分类号： C01B33/033 , C01B33/037
摘要： The invention relates to the manufacture of high purity germanium-bearing silicon alloys as a base material for the production of silicon solar cells. Gaseous SiCl 4 and GeCl 4 are converted to metals by contacting them with liquid Zn, thereby obtaining a Ge-bearing Si alloy and Zn-chloride, which is separated. The alloy is then purified by heating it at a temperature above the boiling point of Zn. This process does not require complicated technologies and preserves the high purity of SiCl 4 and GeCl 4 towards the end product. The only other reactant is Zn, which can be obtained in very high purity grades, and which can be recycled after electrolysis of the Zn-chloride.
摘要翻译：本发明涉及制造高纯锗含硅硅合金作为生产硅太阳能电池的基础材料。气态SiCl 4和GeCl 4通过与液态Zn接触而转化为金属，从而获得分离的含Ge的Si合金和Zn-氯化物。然后通过在高于沸点Zn的温度下加热合金来纯化合金。该方法不需要复杂的技术，并且保持了最终产物的高纯度的SiCl 4和GeCl 4。唯一的其他反应物是Zn，其可以以非常高的纯度等级获得，并且可以在电镀氯化锌之后再循环。

5. 发明申请

WO2006100114A1 PROCESS FOR THE PRODUCTION OF SI BY REDUCTION OF SICLJ WITH LIQUID ZN 审中-公开
标题翻译：通过减少SICLJ与液氮生产SI的方法
公开(公告)号：WO2006100114A1
公开(公告)日：2006-09-28
申请号：PCT/EP2006/002937
申请日：2006-03-24
申请人： UMICORE , ROBERT, Eric , ZIJLEMA, Tjakko
发明人： ROBERT, Eric , ZIJLEMA, Tjakko
IPC分类号： C01B33/033 , C01B33/037 , C30B15/00 , C30B29/06
CPC分类号： H01L31/1804 , C01B33/033 , C01B33/037 , Y02E10/547 , Y02P70/521
摘要： The invention relates to the manufacture of high purity silicon as a base material for the production of e.g. crystalline silicon solar cells. SiCU is converted to Si metal by contacting gaseous SiCU with liquid Zn, thereby obtaining a Si-bearing alloy and Zn-chloride, which is separated. The Si-bearing alloy is then purified at a temperature above the boiling point of Zn. This process does not require complicated technologies and preserves the high purity of the SiCU towards the end product, as the only reactant is Zn, which can be obtained in very high purity grades and continuously recycled.
摘要翻译：本发明涉及制造高纯度硅作为生产例如氧化硅的基础材料。晶体硅太阳能电池。通过使气态SiCU与液态Zn接触将SiCU转化为Si金属，从而得到分离的含Si的合金和Zn-氯化物。然后在高于Zn沸点的温度下纯化含Si的合金。该方法不需要复杂的技术，并且保留了SiCU对最终产物的高纯度，因为唯一的反应物是Zn，其可以以非常高的纯度等级获得并且连续再循环。

6. 发明申请

WO2013164248A1 SELENITE PRECURSOR AND INK FOR THE MANUFACTURE OF CIGS PHOTOVOLTAIC CELLS 审中-公开
标题翻译：用于制造CIGS光伏电池的SELENITE前驱体和墨水
公开(公告)号：WO2013164248A1
公开(公告)日：2013-11-07
申请号：PCT/EP2013/058620
申请日：2013-04-25
申请人： UMICORE
发明人： VAN GENECHTEN, Dirk , THIJS, Ben , ROBERT, Eric , STASSIN, Fabrice
IPC分类号： H01L21/36 , H01L21/02
CPC分类号： H01L21/02568 , H01L21/02628
摘要： The present divulgation concerns solar energy, in particular precursors and inks for the manufacture of CIGS photovoltaic cells. It more particularly concerns a multi-phase crystalline powder comprising Cu-ln-Ga selenite according to formula Cu 1-Z ln x Ga 1-x (SeO 3 ) 2.5-z • nH 2 SeO 3 • mH 2 O wherein: 0 x 1; 0 z 0.30; n > 0; and, m > 0. This powder can be stabilized in a water-based ink without other additives. Upon thermal conversion in a reducing atmosphere, CIGS is formed. This product simultaneously addresses the desirable requirements of straightforward synthesis, easy ink formulation, and efficient conversion to CIGS without the need for toxic selenization gases.
摘要翻译：目前的泄露涉及太阳能，特别是用于制造CIGS光伏电池的前体和油墨。更具体地涉及包含根据式Cu1-ZlnxGa1-x（SeO3）2.5-z的Cu-ln-Ga亚硒酸盐的多相结晶粉末。 nH2SeO3。 mH 2 O其中：0 x 1; 0 z 0.30; n 0; 和这种粉末可以在没有其它添加剂的水基油墨中稳定。在还原性气氛中进行热转化时，形成CIGS。该产品同时满足了直接合成，易于油墨配制和高效转化为CIGS而不需要有毒硒化气体的理想要求。

7. 发明申请

WO2008025438A1 SILICON-BEARING ZINC ALLOY FOR ZINC-QUENCH GALVANISATION 审中-公开
标题翻译：有色金属锌合金用于锌合金化学
公开(公告)号：WO2008025438A1
公开(公告)日：2008-03-06
申请号：PCT/EP2007/006961
申请日：2007-08-07
申请人： UMICORE , GAY, Bruno , ROBERT, Eric , ZIJLEMA, Tjakko
发明人： GAY, Bruno , ROBERT, Eric , ZIJLEMA, Tjakko
IPC分类号： C22C1/10 , C23C2/06
CPC分类号： C23C2/06 , B22F9/08 , B22F2009/0804 , B22F2009/0872 , C22C18/00 , F16C33/121 , F16C2204/50 , F16C2206/56 , F16C2206/80
摘要： The present invention relates to the production of galvanised steel by hot-dip galvanisation, in particular using the so-called zinc-quench technology, which is a variation on the well-known GI process. When the entry temperature of the steel is the bath is particularly high, as is the case in the zinc-quench technology, there is a risk for the formation of undesirable Fe x Zn y intermetallics. This problem was solved by the addition of Si to the galvanisation bath. A process for the manufacture of Si-bearing zinc-based alloys that dissolve well in zinc is also proposed. This process is based on the reaction of SiCl 4 with molten zinc.
摘要翻译：本发明涉及通过热浸镀锌生产镀锌钢，特别是使用所谓的锌 - 淬火技术，这是众所周知的GI工艺的变型。当钢的入口温度是浴时特别高，如锌淬火技术中的情况，存在形成不希望的Fe x Zn x Y y的风险，金属间化合物。通过向镀锌浴中加入Si来解决这个问题。还提出了用于制造在锌中良好溶解的含Si的锌基合金的方法。该方法基于SiCl 4 S与熔融锌的反应。

8. 发明申请

WO2008145236A1 ECONOMICAL PROCESS FOR THE PRODUCTION OF SI BY REDUCTION OF SICL4 WITH LIQUID ZN 审中-公开
标题翻译：通过减少SICL4与液氮生产SI的经济过程
公开(公告)号：WO2008145236A1
公开(公告)日：2008-12-04
申请号：PCT/EP2008/003276
申请日：2008-04-24
申请人： UMICORE , ROBERT, Eric , ZIJLEMA, Tjakko
发明人： ROBERT, Eric , ZIJLEMA, Tjakko
IPC分类号： C01B33/033 , C01B33/037 , C30B29/06
CPC分类号： C01B33/033 , C01B33/037
摘要： The invention relates to an economical process for manufacturing high purity silicon as a base material for the production of e.g. crystalline silicon solar cells. SiCl 4 is converted to Si metal by contacting gaseous SiCl 4 with liquid Zn, in a process comprising the steps of: - providing an initial quantity of molten Zn bath in a reactor; - blowing gaseous SiCl 4 into said molten bath Zn, thereby obtaining a Si-bearing metal phase and Zn-chloride; - separating the Zn-chloride from the Si-bearing metal phase; and - purifying the Si-bearing metal phase at a temperature above the boiling point of Zn, thereby vaporising Zn and obtaining Si metal; wherein the contacting and the separation steps are performed in a single reactor, and characterised in that the contacting step is performed by injecting SiCl 4 at a molar flow rate between 0.1 and 0.8 mol%/mol.min, and preferably between 0.4 and 0.8 mol%/mol.min of the initial Zn quantity, and with a maximum areal supply rate of 50 kg/min per m of bath surface. This process does not require complicated technologies and preserves the high purity of the SiCl 4 towards the end product, as the only reactant is Zn, which can be obtained in very high purity grades and continuously recycled.
摘要翻译：本发明涉及一种用于制造高纯度硅作为生产例如氧化硅的基材的经济方法。晶体硅太阳能电池。 SiCl4通过使气态SiCl4与液态Zn接触而转化为Si金属，方法包括以下步骤： - 在反应器中提供初始量的熔融Zn浴; - 将气态SiCl 4吹入所述熔池Zn中，从而获得含Si的金属相和氯化锌; - 从含Si的金属相中分离出氯化锌; 并在高于Zn沸点的温度下纯化含Si金属相，从而汽化Zn并获得Si金属; 其中所述接触和分离步骤在单个反应器中进行，其特征在于，所述接触步骤通过以0.1至0.8mol％/ mol.min，优选0.4至0.8mol％的摩尔流速注入SiCl 4来进行， / mol.min的初始Zn量，最大面积供应速率为50kg / min / m浴表面。该方法不需要复杂的技术，并且保持SiCl4向最终产物的高纯度，因为唯一的反应物是Zn，其可以以非常高纯度的等级获得并连续回收。

9. 发明申请

WO2008034577A1 PROCESS FOR THE PRODUCTION OF SI BY REDUCTION OF SIHC13 WITH LIQUID ZN 审中-公开
标题翻译：通过减少SIHC13与液氮生产SI的方法
公开(公告)号：WO2008034577A1
公开(公告)日：2008-03-27
申请号：PCT/EP2007/008090
申请日：2007-09-18
申请人： UMICORE , ROBERT, Eric , ZIJLEMA, Tjakko
发明人： ROBERT, Eric , ZIJLEMA, Tjakko
IPC分类号： C01B33/033 , C01B33/037 , C30B29/06 , C30B15/00
CPC分类号： C01B33/033 , C01B33/037
摘要： The invention relates to the manufacture of high purity silicon as a base material for the production of e.g. crystalline silicon solar cells. SiHC1 3 is converted to Si metal by contacting gaseous SiHC1 3 with liquid Zn, thereby obtaining a Si-bearing alloy, H 2 and ZnC1 2 , which are separated. The Si-bearing alloy is then purified at a temperature above the boiling point of Zn. This process does not require complicated technologies and preserves the high purity of the SiHC1 3 towards the end product. The only other reactant is Zn, which can be obtained in very high purity grades, and which can be recycled after electrolysis of the Zn-chloride.
摘要翻译：本发明涉及制造高纯度硅作为生产例如氧化硅的基材。晶体硅太阳能电池。通过使气态SiHC 1 3 3与液体Zn接触将SiHC1 3 3转化为Si金属，从而获得含Si的合金H 2 N 2和ZnCl 3， SUB> 2 ，它们被分离。然后在高于沸点Zn的温度下纯化含Si的合金。该方法不需要复杂的技术，并且保持了最终产品的高纯度的SiHC 1 3 3。唯一的其他反应物是Zn，其可以以非常高的纯度等级获得，并且可以在电镀氯化锌之后再循环。

10. 发明申请

WO2008034576A1 PRODUCTION OF Si BY REDUCTION OF SiCL4 WITH LIQUID Zn, AND PURIFICATION PROCESS 审中-公开
标题翻译：通过减少SiCl4与液态Zn生产Si，以及净化过程
公开(公告)号：WO2008034576A1
公开(公告)日：2008-03-27
申请号：PCT/EP2007/008089
申请日：2007-09-18
申请人： UMICORE , ROBERT, Eric , ZIJLEMA, Tjakko
发明人： ROBERT, Eric , ZIJLEMA, Tjakko
IPC分类号： C01B33/033 , C01B33/037 , C30B29/06 , C30B15/00
CPC分类号： C01B33/033 , C01B33/037
摘要： The invention relates to the manufacture of high purity silicon as a base material for the production of e.g. crystalline silicon solar cells. SiCl 4 is converted to Si metal by contacting gaseous SiCl 4 with liquid Zn, thereby obtaining a Si-bearing alloy and Zn-chloride, which is separated. The Si-bearing alloy is then purified by heating it at a temperature above the melting point of Si and by injecting Cl 2 and/or a gaseous Si chloride into the melt. This process does not require complicated technologies and preserves the high purity of the SiCl 4 towards the end product. The only other reactant is Zn, which can be obtained in very high purity grades, and which can be recycled after electrolysis of the Zn-chloride.
摘要翻译：本发明涉及制造高纯度硅作为生产例如氧化硅的基础材料。晶体硅太阳能电池。 SiCl 4通过使气态SiCl 4与液态Zn接触而转化为Si金属，从而得到分离的含Si的合金和Zn-氯化物。然后，通过在高于Si的熔点的温度下加热Si轴承合金，并通过将Cl 2 N 2和/或气态的Si氯化物注入到熔体中来纯化。该方法不需要复杂的技术，并且保持最终产物的高纯度的SiCl 4。唯一的其他反应物是Zn，其可以以非常高纯度的等级获得，并且可以在电镀氯化锌之后再循环。

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