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1. 发明申请

WO2006039715A1 SEMICONDUCTOR DEVICES HAVING BONDED INTERFACES AND METHODS FOR MAKING THE SAME 审中-公开
标题翻译：具有粘合界面的半导体器件及其制造方法
公开(公告)号：WO2006039715A1
公开(公告)日：2006-04-13
申请号：PCT/US2005/035828
申请日：2005-10-03
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY , ISAACSON, David, M. , TARASCHI, Gianni , FITZGERALD, Eugene, A.
发明人： ISAACSON, David, M. , TARASCHI, Gianni , FITZGERALD, Eugene, A.
IPC分类号： H01L21/336 , C30B25/18
CPC分类号： H01L29/1054 , C30B25/18 , H01L21/187 , H01L21/823807 , H01L29/4916 , H01L29/4925 , H01L29/495 , H01L29/4966 , H01L29/78
摘要： A semiconductor-based structure includes first, second, and intermediate layers, with the intermediate layer bonded directly to the first layer, and in contact with the second layer. Parallel to the bonded interface, the lattice spacing of the second layer is different than the lattice spacing of the first layer, though first and second layers are each formed of essentially the same semiconductor. A method for making a semiconductor-based structure includes directly bonding a first layer to an intermediate layer, and providing a second layer in contact with the intermediate layer.
摘要翻译：基于半导体的结构包括第一，第二和中间层，中间层直接结合到第一层，并与第二层接触。平行于键合界面，第二层的晶格间距与第一层的晶格间隔不同，尽管第一和第二层各自由基本上相同的半导体形成。制造基于半导体的结构的方法包括将第一层直接结合到中间层，以及提供与中间层接触的第二层。

2. 发明申请

WO2006007396A1 STRAINED SILICON-ON-SILICON BY WAFER BONDING AND LAYER TRANSFER 审中-公开
标题翻译：通过波形粘结和层转移制备的硅化硅
公开(公告)号：WO2006007396A1
公开(公告)日：2006-01-19
申请号：PCT/US2005/021283
申请日：2005-06-16
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY , ISAACSON, David, M. , FITZGERALD, Eugene, A.
发明人： ISAACSON, David, M. , FITZGERALD, Eugene, A.
IPC分类号： H01L21/18
CPC分类号： H01L21/187
摘要： A semiconductor-based structure includes first and second layers bonded directly to each other at an interface. Parallel to the interface, the lattice spacing of the second layer is different than the lattice spacing of the first layer. The first and second layers are each formed of essentially the same semiconductor. A method for making a semiconductor-based structure includes providing first and second layers that are formed of essentially the same semiconductor. The first and second layers have, respectively, first and second surfaces. The second layer has a different lattice spacing parallel to the second surface than the lattice spacing of the first layer parallel to the first surface. The method includes contacting the first and second surfaces, and annealing to promote direct atomic bonding between the first and second layers.
摘要翻译：基于半导体的结构包括在界面处彼此直接结合的第一和第二层。平行于界面，第二层的晶格间距不同于第一层的晶格间距。第一层和第二层各自由基本上相同的半导体形成。制造基于半导体的结构的方法包括提供由基本上相同的半导体形成的第一和第二层。第一和第二层分别具有第一和第二表面。第二层具有与第一层平行于第一表面的晶格间隔平行于第二表面的不同晶格间距。该方法包括使第一和第二表面接触，退火以促进第一和第二层之间的直接原子结合。

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