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1. 发明申请

WO2002059975A1 CHARGE-COUPLED DEVICE 审中-公开
标题翻译：电荷耦合器件
公开(公告)号：WO2002059975A1
公开(公告)日：2002-08-01
申请号：PCT/IB2001/002670
申请日：2001-12-19
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V.
发明人： BOSIERS, Jan, T., J. , KLEIMANN, Agnes, C., M. , BOERSMA, Yvonne, A.
IPC分类号： H01L27/148
CPC分类号： H01L29/76816 , H01L27/148
摘要： The invention relates to a CCD of the buried-channel type comprising a charge-transport channel in the form of a zone (12) of the first conductivity type, for example the n-type, in a well (13) of the opposite conductivity type, in the example the p-type. In order to obtain a drift field in the channel below one or more gates (9, 10a) to improve the charge transfer, the well is provided with a doping profile, so that the average concentration decreases in the direction of charge transport. Such a profile can be formed by covering the area of the well during the well implantation with a mask, thereby causing fewer ions to be implanted below the gates (9, 10a) than below other parts of the channel. By virtue of the invention, it is possible to produce a gate (10a) combining a comparatively large length, for example in the output stage in front of the output gate (9) to obtain sufficient storage capacity, with a high transport rate.
摘要翻译：本发明涉及一种埋入通道型的CCD，其包括形成第一导电类型的区域（12）形式的电荷传输通道，例如n型，在相反电导率的阱（13）中类型，在示例中为p型。为了获得在一个或多个栅极（9,10a）下方的通道中的漂移场以改善电荷转移，阱具有掺杂分布，使得平均浓度在电荷传输方向上减小。这样的形状可以通过用掩模在阱注入期间覆盖阱的区域来形成，从而在栅极（9,10a）下面比在沟道的其它部分下方注入更少的离子。根据本发明，可以产生组合比较大长度的门（10a），例如在输出门（9）前面的输出级中以高传输速率获得足够的存储容量。

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