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1. 发明申请

WO02102057A3 METHOD FOR OPERATING A CMOS IMAGE SENSOR WITH INCREASED SENSITIVITY 审中-公开
标题翻译：具有提高灵敏度的CMOS图像传感器的操作方法
公开(公告)号：WO02102057A3
公开(公告)日：2003-04-03
申请号：PCT/EP0205981
申请日：2002-05-31
申请人： ASULAB SA , GRUPP JOACHIM , JACQUET ESTELLE , WUETHRICH CHRISTIAN , DOERING ELKO
发明人： GRUPP JOACHIM , JACQUET ESTELLE , WUETHRICH CHRISTIAN , DOERING ELKO
IPC分类号： H04N3/15 , H01L27/146
CPC分类号： H04N5/3745 , H04N5/3594
摘要： There is disclosed a method for operating a CMOS image sensor including a plurality of pixels (50)each of the pixels including a photo-sensor element (PD)producing charge carriers in proportion to its illumination and storage means (C1)capable of being coupledand uncoupled from the photo-sensor element at a determined instant in order to store, on a memory node (B) of the pixel, a measuring signal representative of the charge carriers produced by saidphoto-sensor element.Each pixel includes at least first MOS transistor (M2)connected via its source and drain terminals respectively to the photo-sensor element and to the storage means. At least during the pixel exposure step, an intermediate level voltage (V )is applied to the gate terminal of the first transistor, said intermediate voltage being selected so that the charge carriers produced by the photo-sensor element are entirely transferred via the first transistor onto the storage means.
摘要翻译：公开了一种用于操作CMOS图像传感器的方法，所述CMOS图像传感器包括多个像素（50），每个像素包括光电传感器元件（PD），所述光电传感器元件（PD）与其照明能够成比例的电荷载流子和能够耦合的存储装置（C1）在确定的时刻从光传感器元件解耦，以便在像素的存储器节点（B）上存储表示由所述光电传感器元件产生的电荷载流子的测量信号。每个像素包括至少第一MOS晶体管（M2）分别经由其源极和漏极端子连接到光电传感器元件和存储装置。至少在像素曝光步骤期间，将中间电平电压（V ）施加到第一晶体管的栅极端子，选择所述中间电压，使得由光电传感器元件产生的电荷载流子完全通过第一晶体管到存储装置上。

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