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1. 发明授权

US11641014B2 Battery cell with anode or cathode with nanomaterial including acidic surface 有权
公开(公告)号：US11641014B2
公开(公告)日：2023-05-02
申请号：US15982776
申请日：2018-05-17
申请人： HHeLi, LLC
发明人： Paige L. Johnson
IPC分类号： H01M10/052 , H01M4/131 , H01M4/36 , H01M4/38 , H01M4/48 , H01M4/505 , H01M4/52 , H01M4/525 , H01M4/58 , H01M4/62 , C01G15/00 , C01G19/02 , C01G23/04 , C01G25/02 , C01G29/00 , C01G30/00 , C01G49/00 , C01G49/02 , H01M10/0525 , H01M4/02
摘要： A battery comprising an acidified metal oxide (“AMO”) material, preferably in monodispersed nanoparticulate form 20 nm or less in size, having a pH −12, at least on its surface.

2. 发明申请

US20230055896A1 SOLID-STATE ELECTROLYTE, CATHODE ELECTRODE, AND METHODS OF MAKING SAME FOR SULFIDE-BASED ALL-SOLID-STATE-BATTERIES 有权
公开(公告)号：US20230055896A1
公开(公告)日：2023-02-23
申请号：US17820662
申请日：2022-08-18
申请人： Northeastern University
发明人： Hongli Zhu , Daxian Cao
IPC分类号： H01M10/0562 , H01M10/0525 , H01M10/054 , C01G15/00
摘要： Current sulfide solid-state electrolyte (SE) membranes utilized in all-solid-state lithium batteries (ASLBs) have a high thickness (0.5˜1.0 mm) and low ion conductance (

3. 发明申请

US20230010899A1 MIXED METAL OXIDE 有权
公开(公告)号：US20230010899A1
公开(公告)日：2023-01-12
申请号：US17810548
申请日：2022-07-01
申请人： IMEC VZW
发明人： Michiel Jan van Setten , Hendrik F.W Dekkers , Karl Opsomer , Geoffrey Pourtois , Gouri Sankar Kar
IPC分类号： H01L29/24 , C01G9/00 , C01G15/00 , H01L29/786 , H01L21/02
摘要： In an aspect, a mixed metal oxide comprises or consists essentially of: a mixture comprises or consisting essentially of 0.30 to 0.69 parts by mole Mg, 0.20 to 0.69 parts by mole Zn, 0.01 to 0.30 parts by mole of a third element selected from Al and Ga, and, either, when the third element is Al, 0.00 to 0.31 parts by mole of other elements selected from metals and metalloids, or, when the third element is Ga, 0.00 to 0.15 parts by mole of other elements selected from metals and metalloids, wherein the sum of all parts by mole of Mg, Zn, the third element, and the other elements amounts to 1.00, wherein the amount in parts by mole of the other elements is lower than the amount in parts by mole of Mg and is lower than the amount in parts by mole of Zn; oxygen; and less than 0.01 parts by mole of non-metallic and non-metalloid impurities.

4. 发明授权

US11518934B2 System and method for making quantum dots 有权
公开(公告)号：US11518934B2
公开(公告)日：2022-12-06
申请号：US16435846
申请日：2019-06-10
申请人： King Abdullah University of Science and Technology
发明人： Osman M. Bakr , Jun Pan , Ala'a El-Ballouli , Kristian Rahbek Knudsen , Ahmed L. Abdelhady
IPC分类号： C09K11/00 , C09K11/66 , H01L21/02 , B01J19/00 , C09K11/54 , C09K11/58 , B01J13/00 , B01J14/00 , C01G15/00 , C01G21/21 , C01G51/00 , C09K11/02 , H01L31/0352 , H01L33/04 , B82Y30/00 , B82Y20/00 , B82Y35/00
摘要： Embodiments of the present disclosure provide for methods of making quantum dots (QDs) (passivated or unpassivated) using a continuous flow process, systems for making QDs using a continuous flow process, and the like. In one or more embodiments, the QDs produced using embodiments of the present disclosure can be used in solar photovoltaic cells, bio-imaging, IR emitters, or LEDs.

5. 发明申请

US20220228058A1 METHOD OF MANUFACTURING A CORE-SHELL STRUCTURED QUANTUM DOT PARTICLE, CORE-SHELL STRUCTURED QUANTUM DOT PARTICLE MANUFACTURED THEREBY, POPULATION OF THE CORE-SHELL STRUCTURED QUANTUM DOT PARTICLES, AND DISPLAY DEVICE INCLUDING THE SAME 有权
公开(公告)号：US20220228058A1
公开(公告)日：2022-07-21
申请号：US17575902
申请日：2022-01-14
申请人： SHIN-A T&C , UNIAM
发明人： Seung Mo HONG , Jin Han SONG , Hyeok Jin HONG , Seok Kyu PARK , Hye Ran JUNG , Ju Young LEE , Jae Woo JANG
IPC分类号： C09K11/70 , C09K11/02 , C01G15/00
摘要： A method of preparing a core-shell structured quantum dot particle includes the steps of (a) preparing a core of quantum dot particle containing indium (In) and phosphorus (P) and (b) forming a shell by reacting the core of the quantum dot particles prepared in step (a), a zinc oxo cluster represented by Formula 1 below, and at least one anion precursor containing a group 16 element. Quantum dot particles prepared by the method; a population of the quantum dot particles; and a display device containing the population of the quantum dot particles are disclosed:

6. 发明申请

US20220204357A1 METHOD FOR THE PRODUCTION OF A GALLATE SOLUTION 有权
公开(公告)号：US20220204357A1
公开(公告)日：2022-06-30
申请号：US17574470
申请日：2022-01-12
申请人： Obshchestvo S Ogranichennoy Otvetstvennost'yu "Obedinennaya Kompaniya Rusal Inzhenerno-Tekhnologiche
发明人： Aleksandr Aleksandrovich Damaskin , Aleksandr Gennadievich Suss , Maksim Nikolaevich Pechenkin , Anna Aleksandrovna Damaskina
IPC分类号： C01G15/00
摘要： The gallate solution is obtained from an alkaline gallium-containing solution. Gallium is sorbed from a recycled solution on a divinylbenzene polymer-based ionite, gallium is desorbed with a solution of sulfuric acid to obtain a gallium-containing eluate, followed by concentration of gallium by converting it to a solid phase by neutralisation of the eluate with a caustic solution with precipitation of a gallium hydroxide precipitate at a given temperature. Thickening and filtration of the precipitate are carried out with its further dissolution in a caustic solution until a given concentration of gallium in the solution is obtained. The method allows to increase the concentration of gallium by converting it to the solid phase when neutralising acidic eluates with an alkaline solution, which simplifies the concentration process and reduces the number of technological operations and, as a result, reduces the cost of gallium production.

7. 发明授权

US11345607B2 Near-infrared absorbing fine particle dispersion liquid, near-infrared absorbing fine particle dispersion body, near-infrared absorbing transparent substrate, near-infrared absorbing laminated transparent substrate 有权
公开(公告)号：US11345607B2
公开(公告)日：2022-05-31
申请号：US16321174
申请日：2017-05-31
申请人： SUMITOMO METAL MINING CO., LTD.
发明人： Hirofumi Tsunematsu , Takeshi Chonan
IPC分类号： C01G15/00 , C01G19/02 , C01G41/02 , C09D5/32 , G02B5/22 , C09K3/00 , B32B27/18 , C08K3/22 , C08L101/00
摘要： There is provided a near-infrared absorbing fine particle dispersion liquid containing near-infrared absorbing fine particles, thereby as well as exhibiting near-infrared light absorption properties and suppressing a scorching sensation on the skin when used in structures such as window materials and the like, also enabling usage of communication devices, imaging devices, sensors and the like that employ near-infrared light through these structures, a near-infrared absorbing film or a near-infrared absorbing glass, a dispersion body or a laminated transparent substrate, the dispersion liquid containing at least composite tungsten oxide fine particles and antimony doped tin oxide fine particles and/or tin doped indium oxide fine particles as near-infrared absorbing fine particles, wherein in the composite tungsten oxide fine particles, an average value of a transmittance in a wavelength range of 800 to 900 nm is 30% or more and 60% or less, and an average value of a transmittance in a wavelength range of 1200 to 1500 nm is 20% or less, and a transmittance at a wavelength of 2100 nm is 22% or less, when a visible light transmittance is 85% at the time of calculating only light absorption by the composite tungsten oxide fine particles, and containing mixed particles of the composite tungsten oxide fine particles and antimony-doped tin oxide fine particles and/or tin-doped indium oxide fine particles dispersed in a liquid medium, wherein the liquid medium is selected from rater, an organic solvent, an oil and fat, a liquid resin, a liquid plasticizer for plastics, or a mixture thereof, wherein when a visible light transmittance is adjusted to 85% at the time of calculating only light absorption by the near-infrared absorbing fine particles in the dispersion liquid by diluting with the liquid medium, an average value of a transmittance in the wavelength range of 800 to 900 nm is 30% or more and 60% or less, an average value of a transmittance in the wavelength range of 1200 to 1500 nm is 20% or less, and a transmittance at the wavelength of 2100 nm is 11% or less.

8. 发明申请

US20220144661A1 GROUP III-V COMPOUND HAVING LAYERED STRUCTURE AND FERROELECTRIC-LIKE PROPERTIES 有权
公开(公告)号：US20220144661A1
公开(公告)日：2022-05-12
申请号：US17110929
申请日：2020-12-03
申请人： Industry-Academic Cooperation Foundation, Yonsei University
发明人： Woo-young SHIM , Min-jung KIM , Tae-young KIM , Hong CHOI , Jong-bum WON , Ji-hong BAE , Sang-jin CHOI , Bo-kyeong KIM
IPC分类号： C01G28/00 , C01G30/00 , C01G15/00
摘要： Proposed are a layered Group III-V compound having ferroelectric properties, a Group III-V compound nanosheet that may be prepared using the same, and an electrical device including the materials. Proposed is a layered compound represented by [Formula 1] Mx−mAyBz (M is at least one of Group I or Group II elements, A is at least one of Group III elements, B is at least one of Group V elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0

9. 发明申请

US20220098052A1 Preparation method of indium oxide with stable morphology and application thereof 有权
公开(公告)号：US20220098052A1
公开(公告)日：2022-03-31
申请号：US17483124
申请日：2021-09-23
申请人： Shanghai Jiao Tong University
发明人： Han Jin , Daxiang Cui , Cuili Xue , Yuna Zhang , Yuli Xv , Yuan Zhou
IPC分类号： C01G15/00 , B22F1/00 , B22F9/04 , G01N27/30 , G01N27/406 , G01N27/333
摘要： A preparation method of indium oxide with stable morphology includes: (1) mixing indium oxide powder and bismuth oxide powder according to a mass ratio of 1:0.1-0.5 to obtain a powder mixture; (2) putting the powder mixture into a ball mill for ball milling at room temperature to obtain a uniform powder mixture; (3) putting the obtained uniform powder mixture into a muffle furnace and calcining at 700-1000° C.; and (4) obtaining the indium oxide with cubic stable morphology after the muffle furnace naturally cools to room temperature. The method has advantages of simple synthesis process, short synthesis period, high sample yield, no need of complicated equipment, and morphology of the obtained indium oxide can be maintained after being heated at a high temperature within 1000° C. for 2 hours. An electrochemical sensor prepared by using the indium oxide obtained by the method has better selectivity to nonane.

10. 发明申请

US20220081613A1 ELECTRONIC ELEMENT WITH NANOMATERIAL AND MANUFACTURING METHOD THEREOF 有权
公开(公告)号：US20220081613A1
公开(公告)日：2022-03-17
申请号：US17425501
申请日：2020-05-04
申请人： RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
发明人： Sohee JEONG , Hyekyoung CHOI , Youngsik KIM
IPC分类号： C09K11/70 , C01G15/00 , C01G21/21 , C09K11/66
摘要： A nanomaterial includes quantum dots having a crystal structure, wherein the quantum dots include an exposed surface in a specific direction, and the exposed surface has a ligand bound thereto.

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