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    • 1. 发明授权
    • Method of producing a surface acoustic wave device
    • 制造表面声波装置的方法
    • US06898831B2
    • 2005-05-31
    • US10235566
    • 2002-09-06
    • Takashi Iwamoto
    • Takashi Iwamoto
    • H03H9/145H03H3/08H03H9/02H03H9/25H04R17/00H01L4/04H01L4/08H01L4/18
    • H03H9/14541Y10T29/42Y10T29/49005Y10T29/49128Y10T29/49789Y10T29/49798
    • A surface acoustic wave device includes interdigital transducer (IDT) electrode and reflectors disposed on a piezoelectric substrate. Each of the IDT electrode and the reflectors has a multi-layer film structure including at least one layer (high specific gravity metal component containing layer) including as a major component a metal with a specific gravity of at least about 15 and having a film-thickness of at least about 10 nm, and at least one layer (low specific gravity metal component containing layer) including as a major component a metal with a specific gravity of up to about 10 and a volume resistivity as a bulk value (at about 20° C.) of up to about 10×10−8 Ω·m, and having a film-thickness of at least about 10 nm. For example, the multi-layer structure includes an Ni film (low specific gravity metal component containing layer) with a film-thickness of about 150 nm disposed on a Ti film, a Cu film (low specific gravity metal component containing layer) with a film-thickness of about 250 nm disposed on the Ni film, and an Au film (high specific gravity metal component containing layer) with a film-thickness of about 50 nm disposed on the Cu film.
    • 表面声波装置包括叉指式换能器(IDT)电极和设置在压电基板上的反射器。 IDT电极和反射器中的每一个具有多层膜结构,其包括至少一层(高比重金属成分含有层),其包含作为主要成分的比重为至少约15的金属,并且具有膜 - 至少约10nm的厚度和至少一层(低比重金属成分含有层),其包含比重高达约10的金属作为主要成分,体积电阻率为体积值(约为20) ℃),高达约10×10 -8Ω·m,并且具有至少约10nm的膜厚度。 例如,多层结构包括设置在Ti膜上的膜厚约150nm的Ni膜(低比重金属成分含有层),Cu膜(低比重金属成分含有层),具有 设置在Ni膜上的约250nm的膜厚度和设置在Cu膜上的膜厚度为约50nm的Au膜(高比重金属成分含有层)。