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1. 发明授权

US5972741A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5972741A
公开(公告)日：1999-10-26
申请号：US958992
申请日：1997-10-28
申请人： Hirotoshi Kubo , Eiichiroh Kuwako , Masanao Kitagawa , Masahito Onda , Hiroaki Saitou , Keita Odajima
发明人： Hirotoshi Kubo , Eiichiroh Kuwako , Masanao Kitagawa , Masahito Onda , Hiroaki Saitou , Keita Odajima
IPC分类号： H01L21/336 , H01L29/78 , H01L21/352
CPC分类号： H01L29/7813
摘要： A first conductivity layer and a first insulating film are successively formed on a channel layer, and a photoresist film is formed on the first insulating film. The photoresist film is selectively exposed to light using a photomask and patterned. Using the patterned photoresist film as a mask, the first insulating film and the first conductivity layer are etched to form source electrodes from the first conductivity layer. Using the first insulating film and the source electrodes as a mask, an impurity of one conductivity type is diffused into exposed portions of the channel layer to form source regions. A second insulating film is formed in covering relation to side walls and upper surfaces of the source electrodes. Using the second insulating film as a mask, the channel layer and the common drain layer are etched to form trenches in the source regions, the channel layer, and the common drain layer. A third insulating film is formed on surfaces of the trenches, and a second conductive layer is formed as a gate electrode on the entire surface so as to fill up the trenches and cover the second insulating film.
摘要翻译：在沟道层上依次形成第一导电层和第一绝缘膜，在第一绝缘膜上形成光致抗蚀剂膜。使用光掩模将光致抗蚀剂膜选择性地暴露于光并图案化。使用图案化的光致抗蚀剂膜作为掩模，第一绝缘膜和第一导电层被蚀刻以从第一导电层形成源电极。使用第一绝缘膜和源电极作为掩模，一种导电类型的杂质扩散到沟道层的暴露部分中以形成源极区。形成与源极电极的侧壁和上表面相关的第二绝缘膜。使用第二绝缘膜作为掩模，蚀刻沟道层和公共漏极层，以在源极区，沟道层和公共漏极层中形成沟槽。第三绝缘膜形成在沟槽的表面上，并且在整个表面上形成第二导电层作为栅电极，以填充沟槽并覆盖第二绝缘膜。

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