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1. 发明授权

US06420701B1 Method of determining average crystallite size of material and apparatus and method for preparing thin film of the material 失效
标题翻译：确定材料和设备的平均微晶尺寸的方法以及制备该材料的薄膜的方法
公开(公告)号：US06420701B1
公开(公告)日：2002-07-16
申请号：US09119660
申请日：1998-07-21
申请人： Hiroyuki Hashimoto
发明人： Hiroyuki Hashimoto
IPC分类号： H01J3729
CPC分类号： H01J37/252 , H01J2237/255
摘要： A specimen of thin film of a material having a crystal structure and exhibiting an absorption in ultraviolet region is irradiated with electron beams and the energy loss spectrum of the reflected electrons is observed and utilized. For example, the correlations of (1) the energy of the plasmon peak and the relative intensity of the plasmon peak to the elastic peak or the profile thereof, (2) the energy (loss energy being between 4 and 8 eV) of the peak attributed to &pgr;→&pgr;* transition and the relative intensity of the &pgr;→&pgr;* peak to the elastic peak or the profile thereof and (3) the profile of the background of the continuous spectrum formed by inelastic scattering of electrons or the relative intensity of a point to the elastic peak and the average crystallite size of the material of the specimen are used to determine the crystallite size of the material.
摘要翻译：用电子束照射具有晶体结构且在紫外线区域呈现吸收的材料的薄膜样本，并观察并利用反射电子的能量损失谱。例如，（1）等离子体激元峰的能量与等离子体激元峰的相对强度与弹性峰值或其轮廓的相关性，（2）峰值的能量（损耗能量在4和8eV之间）归因于pi-> pi *转变和pi-> pi *峰相对于弹性峰或其轮廓的相对强度，以及（3）由电子或相对的非弹性散射形成的连续光谱的背景分布使用试样的材料的弹性峰点和平均微晶尺寸的强度来确定材料的微晶尺寸。

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