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1. 发明授权

US07651921B2 Semiconductor device having a frontside contact and vertical trench isolation and method of fabricating same 有权
标题翻译：具有前端接触和垂直沟槽隔离的半导体器件及其制造方法
公开(公告)号：US07651921B2
公开(公告)日：2010-01-26
申请号：US11577313
申请日：2005-10-13
申请人： Wolfgang Rauscher
发明人： Wolfgang Rauscher
IPC分类号： H00L21/76
CPC分类号： H01L21/743 , H01L21/76283 , H01L21/84 , H01L27/1203
摘要： There is a method of forming a contact post and surrounding isolation trench in a semiconductor-on-insulator (SOI) substrate. The method comprises etching a contact hole and surrounding isolation trench from an active layer of the substrate to the insulating layer, masking the trench and further etching the contact hole to the base substrate layer, filling the trench and contact hole with undoped intrinsic polysilicon and then performing a doping process in respect of the polysilicon material filling the contact hole so as to form in situ a highly doped contact post, while the material filling the isolation trench remains non-conductive. The isolation trench and contact post are formed substantially simultaneously so as to avoid undue interference with the device fabrication process.
摘要翻译：存在在绝缘体上半导体（SOI）衬底中形成接触柱和围绕隔离沟槽的方法。该方法包括将接触孔和围绕隔离沟槽从衬底的有源层到绝缘层进行蚀刻，掩蔽沟槽并进一步蚀刻到基底层的接触孔，用未掺杂的本征多晶硅填充沟槽和接触孔，然后对填充接触孔的多晶硅材料进行掺杂工艺，以便原位形成高度掺杂的接触柱，而填充隔离沟槽的材料保持不导电。隔离沟槽和接触柱基本上同时形成，以避免对器件制造工艺造成不适当的干扰。

2. 发明授权

US07514283B2 Method of fabricating electromechanical device having a controlled atmosphere 有权
标题翻译：具有受控气氛的机电装置的制造方法
公开(公告)号：US07514283B2
公开(公告)日：2009-04-07
申请号：US10392528
申请日：2003-03-20
申请人： Aaron Partridge , Markus Lutz , Silvia Kronmueller
发明人： Aaron Partridge , Markus Lutz , Silvia Kronmueller
IPC分类号： H00L21/00 , H00L21/76 , C23F1/00
CPC分类号： B81C1/00293 , B81C2203/0136
摘要： There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of fabricating or manufacturing MEMS having mechanical structures that operate in controlled or predetermined mechanical damping environments. In this regard, the present invention encapsulates the mechanical structures within a chamber, prior to final packaging and/or completion of the MEMS. The environment within the chamber containing and/or housing the mechanical structures provides the predetermined, desired and/or selected mechanical damping. The parameters of the encapsulated fluid (for example, the gas pressure) in which the mechanical structures are to operate are controlled, selected and/or designed to provide a desired and/or predetermined operating environment.
摘要翻译：这里描述和说明了许多发明。一方面，本发明涉及一种制造或制造具有在受控或预定的机械阻尼环境中操作的机械结构的MEMS的技术。在这方面，本发明在MEMS的最终包装和/或完成之前将机械结构封装在腔室内。包含和/或容纳机械结构的腔室内的环境提供预定的，期望的和/或选择的机械阻尼。控制，选择和/或设计机械结构要操作的封装流体的参数（例如，气体压力）以提供期望的和/或预定的操作环境。

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