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1. 发明授权

US06479821B1 Thermally induced phase switch for laser thermal processing 有权
标题翻译：用于激光热处理的热诱导相位开关
公开(公告)号：US06479821B1
公开(公告)日：2002-11-12
申请号：US09659094
申请日：2000-09-11
申请人： Andrew M. Hawryluk , Somit Talwar , Yun Wang , David A. Markle , Michael O. Thompson
发明人： Andrew M. Hawryluk , Somit Talwar , Yun Wang , David A. Markle , Michael O. Thompson
IPC分类号： G03G516
CPC分类号： H01L21/268 , G03G5/16
摘要： A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with a pulse of radiation (10), which may be in the form of a scanning beam (B), using a thermally induced phase switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs radiation and converts the absorbed radiation into heat. The phase switch layer is deposited above or below the absorber layer. The phase switch layer may comprise one or more thin film layers, and may include a thermal insulator layer and a phase transition layer. Because they are in close proximity, the portion of the phase switch layer covering the process region has a temperature that is close to the temperature of the process region. The phase of the phase switch layer changes from a first phase (e.g., solid) to a second phase (e.g., liquid or vapor) at a phase transition temperature (TP). During this phase change, the phase switch layer absorbs heat but does not significantly change temperature. This limits the temperature of the absorber layer and the process region since both are close to the phase change layer.
摘要翻译：一种用于控制从辐射脉冲（10）暴露于工件（W）的处理区域（30）的热量的方法，装置和系统，其可以是扫描光束（B）的形式，，使用热感应相位层（60）。本发明的装置是具有沉积在工件上方的诸如硅晶片的吸收层（50）的薄膜叠层（6）。吸收层的一部分覆盖工艺区域。吸收层吸收辐射并将吸收的辐射转化成热。相位开关层沉积在吸收层的上方或下方。相位开关层可以包括一个或多个薄膜层，并且可以包括绝热层和相变层。由于它们非常接近，覆盖处理区域的相位开关层的部分具有接近处理区域的温度的温度。在相转变温度（TP）下，相位开关层的相位从第一相（例如，固体）变为第二相（例如，液体或蒸气）。在该相变期间，相开关层吸热，但不会明显改变温度。这限制了吸收层和工艺区域的温度，因为它们都接近于相变层。

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