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    • 1. 发明授权
    • Wafer supporter
    • 晶圆支架
    • US07237606B2
    • 2007-07-03
    • US10480460
    • 2002-06-12
    • Mitsuhiro YuasaKeiichi EnjojiKoji Homma
    • Mitsuhiro YuasaKeiichi EnjojiKoji Homma
    • F28F7/20F28D15/00
    • H01L21/68757C23C16/4581C30B25/12C30B31/14H01L21/67103H01L21/67294H01L21/6835H01L2221/68313
    • A wafer supporting unit (10) includes a base (12) and a thermally conductive member (14). The base is formed by nickel material. The thermally conductive member is formed in the shape of a lamina, includes silicone rubber (16) serving as the main material, and Ag fine powder (18) is blended with the silicone rubber. The Ag fine powder is blended with high density in part of the thermally conductive member, and a plurality of pillar-shaped regions (20) is formed with one end facing the bottom, and with the other end facing the top. The wafer supporting unit does not produce curvature in a wafer, and provides efficient cooling of the wafer, and does not cause heat degradation in a thermally conductive member prepared on the rear side of the wafer during processing.
    • 晶片支撑单元(10)包括基座(12)和导热构件(14)。 基体由镍材料形成。 导热构件形成为薄片形状,包括用作主要材料的硅橡胶(16),和Ag细粉末(18)与硅橡胶共混。 在导热部件的一部分中,Ag细粉末以高密度混合,并且形成多个柱状区域(20),其一端面向底部,另一端面向顶部。 晶片支撑单元在晶片中不产生曲率,并且提供晶片的有效冷却,并且不会在加工期间在晶片的后侧准备的导热部件中导致热劣化。