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1. 发明授权

US6057410A Polymeric ligands, polymeric metallocenes, catalyst systems, preparation, and use 失效
公开(公告)号：US6057410A
公开(公告)日：2000-05-02
申请号：US48392
申请日：1998-03-26
申请人： Helmut G. Alt , Peter Schertl , Bernd Peifer , Syriac J. Palackal , M. Bruce Welch
发明人： Helmut G. Alt , Peter Schertl , Bernd Peifer , Syriac J. Palackal , M. Bruce Welch
IPC分类号： C07C13/00 , C07F17/00 , C08F4/44 , C08F4/639 , C08F4/64 , C08F4/649 , C08F4/6592 , C08F10/00 , C08F30/04 , C08F32/08 , C08F30/08 , C08F30/10
CPC分类号： C08F10/00 , C07F17/00 , C08F4/63912 , C08F4/65925 , Y10S526/943
摘要： Polymeric ligands, polymeric metallocenes, and processes for preparing same are provided. The process for preparing polymeric metallocenes comprises reacting a polymeric ligand, a transition metal compound, and an alkali metal compound. In one embodiment, a process for preparing polymeric ligands comprises reacting at least one bridged cyclopentadienyl-type monomer and an initiator under polymerization conditions. In another embodiment, a polymeric ligand is represented by the formula [Q'].sub.n, wherein Q' is a unit containing at least one bridged cyclopentadienyl-type group and wherein n is 1-5000. In another embodiment, a polymeric metallocene is represented by the formula [Q"MX.sub.m ].sub.n, wherein Q" is a unit containing at least one fluorenyl-type group, M is a transition metal, each X is individually a hydrocarbyl group containing 1 to 20 carbon atoms, an alkoxy group containing 1 to 12 carbon atoms, an aryloxy group containing 6 to 20 carbon atoms, a halide, or hydride, m is 2 or 3, and wherein n is 1-5000. Other aspects of the present invention include a catalyst system comprising the polymeric metallocene and an organoaluminoxane, a method for preparing same, and a polymerization process employing the catalyst system.

2. 发明授权

US4397994A High vinyl polybutadiene or styrene-butadiene copolymer 失效
标题翻译：高乙烯基聚丁二烯或苯乙烯 - 丁二烯共聚物
公开(公告)号：US4397994A
公开(公告)日：1983-08-09
申请号：US303518
申请日：1981-09-18
申请人： Yasumasa Takeuchi , Yoshito Yoshimura , Noboru Ohshima , Mitsuhiko Sakakibara , Akira Tsuji
发明人： Yasumasa Takeuchi , Yoshito Yoshimura , Noboru Ohshima , Mitsuhiko Sakakibara , Akira Tsuji
IPC分类号： B65H75/40 , C08C19/44 , C08F2/06 , C08F4/46 , C08F8/42 , C08F8/44 , C08F30/04 , C08F30/10 , C08F36/06 , C08F212/08 , C08G81/02 , C08L9/00 , C08L9/06 , C08L25/04 , D21H13/44 , C08F8/18
CPC分类号： D21H13/44 , C08C19/44 , C08G81/022 , D21H5/186
摘要： High vinyl polybutadiene or styrene-butadiene copolymer obtained by polymerizing 1,3-butadiene alone or with styrene in a hydrocarbon solvent using an organolithium compound as an initiator and coupling the resulting polymer, characterized in that(1) the polybutadiene or styrene-butadiene copolymer comprises at least 20% by weight of a polymer having in its molecular chain a linkage between butadienyl and at least one metal selected from the group consisting of silicon, germanium, tin and lead,(2) the styrene content of said copolymer is 40% by weight or less, and(3) the polybutadiene or the butadiene portion of the styrene-butadiene copolymer has a vinyl content of 50 to 95%.Said polybutadiene or styrene-butadiene copolymer has low rolling resistance, high wet skid resistance, highly improved fracture property and, an excellent processability.
摘要翻译：通过使用有机锂化合物作为引发剂在烃溶剂中单独或与苯乙烯聚合而获得的高乙烯基聚丁二烯或苯乙烯 - 丁二烯共聚物，并将所得聚合物偶联，其特征在于（1）聚丁二烯或苯乙烯 - 丁二烯共聚物包含至少20重量％的聚合物，其分子链中是丁二烯基与选自硅，锗，锡和铅中的至少一种金属之间的连接，（2）所述共聚物的苯乙烯含量为40％以下，（3）苯乙烯 - 丁二烯共聚物的聚丁二烯或丁二烯部分的乙烯基含量为50〜95％。所述聚丁二烯或苯乙烯 - 丁二烯共聚物具有低滚动阻力，高抗湿滑性，高度改善的断裂性能和优异的加工性能。

3. 发明授权

US5262246A Material for use in spacecraft parts 失效
标题翻译：用于航天器零件的材料
公开(公告)号：US5262246A
公开(公告)日：1993-11-16
申请号：US633236
申请日：1990-12-21
申请人： Takao Nishikawa , Katsumi Sonoda , Yoshiko Aiba , Hiroshi Adachi
发明人： Takao Nishikawa , Katsumi Sonoda , Yoshiko Aiba , Hiroshi Adachi
IPC分类号： C09D143/00 , C09D183/04 , B32B27/30 , C08F30/10 , C08F112/08
CPC分类号： C09D183/04 , C09D143/00 , Y10T428/31855 , Y10T428/31931
摘要： A material for spacecrafts pertaining to this invention is made of a compound containing the group IV b elements, as a material of which proof for oxygen atom is absolutely necessary. The application of this material, in the form of a shield part (a resin layer) for covering at least a portion of material used in a structural part of the spacecraft enables a long use (from several months to several decades or more) in the oxygen atom environment in the space, which was impossible in the part.
摘要翻译：用于本发明的航天器的材料由含有第Ⅳb族元素的化合物制成，作为绝对需要证明氧原子的材料。将这种材料应用于用于覆盖航天器的结构部分中使用的材料的至少一部分的屏蔽部分（树脂层）的形式使得能够长期使用（几个月到几十年或更长时间）在氧原子环境在空间，这是不可能的。

4. 发明授权

US5252433A Method of forming and removing resist pattern 失效
标题翻译：形成和去除抗蚀剂图案的方法
公开(公告)号：US5252433A
公开(公告)日：1993-10-12
申请号：US667986
申请日：1991-03-12
申请人： Hirofumi Fujioka , Yasuhiro Yoshida , Hiroyuki Nakajima , Hitoshi Nagata , Shinji Kishimura
发明人： Hirofumi Fujioka , Yasuhiro Yoshida , Hiroyuki Nakajima , Hitoshi Nagata , Shinji Kishimura
IPC分类号： G03F7/038 , C08F30/00 , C08F30/04 , C08F30/10 , G03F7/039 , G03F7/26 , G03F7/42 , H01L21/027 , H01L21/30 , G03C5/00 , G03C5/16
CPC分类号： G03F7/265 , G03F7/422
摘要： The present invention is directed to a method of forming and removing a resist pattern, used in a semiconductor manufacture. In a first mode of the present invention, an upper resist layer containing germanium is selectively formed on a bottom resist layer and a resist pattern is formed with the upper resist layer as a mask. In a second mode of the present invention, a resist layer formed on a substrate is selectively exposed to introduce a germanium compound into the exposed portions and the above described resist layer is subjected to an anisotropic dry etching to remove the nonexposed portions of the resist layer, whereby forming a resist pattern. Accordingly, the fine pattern can be formed on the substrate in high accuracy by the use of the above described resist pattern. In addition, in the first and the second modes of the present invention, the resist pattern is removed by the use of an acid having an oxidizing power, so that the resist pattern can be easily removed from the substrate.
摘要翻译：本发明涉及用于半导体制造中的形成和去除抗蚀剂图案的方法。在本发明的第一模式中，在底部抗蚀剂层上选择性地形成含有锗的上抗蚀剂层，并且以上抗蚀剂层形成抗蚀剂图案作为掩模。在本发明的第二方式中，选择性地暴露在基板上形成的抗蚀剂层，以将锗化合物引入到暴露部分中，并且对上述抗蚀剂层进行各向异性干法蚀刻以除去抗蚀剂层的未曝光部分，从而形成抗蚀剂图案。因此，可以通过使用上述抗蚀剂图案以高精度在基板上形成精细图案。此外，在本发明的第一和第二模式中，通过使用具有氧化能力的酸去除抗蚀剂图案，使得抗蚀剂图案可以容易地从基板去除。

5. 发明申请

US20080015278A1 Metal-Containing Compositions and Method of Making Same 有权
标题翻译：含金属的组合物及其制备方法
公开(公告)号：US20080015278A1
公开(公告)日：2008-01-17
申请号：US11792739
申请日：2006-06-12
申请人： Mangala Malik , Joseph Schwab
发明人： Mangala Malik , Joseph Schwab
IPC分类号： C08F30/04 , C08F30/10 , C08J3/28
CPC分类号： C08J3/28 , C08F230/04
摘要： The present invention relates to metal-containing compositions with refractive indices of at least 1.5 comprising a metal-containing precursor unit (MU), a prepolymer unit (PU), and a catalyst or an initiator capable of inducing a combining reaction of ethylenically unsaturated functional groups of the metal-containing precursor unit and reactive functional groups of the prepolymer unit. In another embodiment, the composition comprises MU and a catalyst or initiator capable of inducing a combining reaction of the metal-containing precursor units. Both MU and PU contain additional functional groups, which may be selected to impart compatibility with each other and to produce optically clear films. The metal-containing compositions can be used to produce films or articles having a transmittance of at least 90% and index of refraction in the range of 1.5 to 1.8 in the 400-700 nm range of light and 1.5 to 2.4 in the 150-400 nm range of light.
摘要翻译：本发明涉及具有至少1.5的折射率的含金属组合物，其包含含金属的前体单元（MU），预聚物单元（PU），以及能够诱导烯属不饱和官能团的组合反应的催化剂或引发剂含金属的前体单元的基团和预聚物单元的反应性官能团。在另一个实施方案中，组合物包含MU和能够诱导含金属的前体单元的组合反应的催化剂或引发剂。 MU和PU都包含另外的官能团，其可以被选择以赋予彼此的相容性并产生光学透明的膜。含金属的组合物可用于生产具有至少90％的透光率和在400-700nm光范围内的1.5至1.8范围内的折射率和在150-400中的1.5至2.4的膜或制品 nm范围的光。

6. 发明授权

US5426016A Method of forming and removing resist pattern 失效
标题翻译：形成和去除抗蚀剂图案的方法
公开(公告)号：US5426016A
公开(公告)日：1995-06-20
申请号：US87100
申请日：1993-07-07
申请人： Hirofumi Fujioka , Yasuhiro Yoshida , Hiroyuki Nakajima , Hitoshi Nagata , Shinji Kishimura
发明人： Hirofumi Fujioka , Yasuhiro Yoshida , Hiroyuki Nakajima , Hitoshi Nagata , Shinji Kishimura
IPC分类号： G03F7/038 , C08F30/00 , C08F30/04 , C08F30/10 , G03F7/039 , G03F7/26 , G03F7/42 , H01L21/027 , H01L21/30 , G03C5/00
CPC分类号： G03F7/265 , G03F7/422
摘要： The present invention is directed to a method of forming and removing a resist pattern, used in a semiconductor manufacture.In a first mode of the present invention, an upper resist layer containing germanium is selectively formed on a bottom resist layer and a resist pattern is formed with the upper resist layer as a mask. In a second mode of the present invention, a resist layer formed on a substrate is selectively exposed to introduce a germanium compound into the exposed portions and the above described resist layer is subjected to an anisotropic dry etching to remove the nonexposed portions of the resist layer, whereby forming a resist pattern. Accordingly, the fine pattern can be formed on the substrate in high accuracy by the use of the above described resist pattern. In addition, in the first and the second modes of the present invention, the resist pattern is removed by the use of an acid having an oxidizing power, so that the resist pattern can be easily removed from the substrate.
摘要翻译：本发明涉及用于半导体制造中的形成和去除抗蚀剂图案的方法。在本发明的第一模式中，在底部抗蚀剂层上选择性地形成含有锗的上抗蚀剂层，并且以上抗蚀剂层形成抗蚀剂图案作为掩模。在本发明的第二模式中，选择性地暴露形成在基板上的抗蚀剂层，以将锗化合物引入到暴露部分中，并且对上述抗蚀剂层进行各向异性干蚀刻以除去抗蚀剂层的未涂覆部分，从而形成抗蚀剂图案。因此，可以通过使用上述抗蚀剂图案以高精度在基板上形成精细图案。此外，在本发明的第一和第二模式中，通过使用具有氧化能力的酸去除抗蚀剂图案，使得抗蚀剂图案可以容易地从基板去除。

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