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    • 1. 发明授权
    • Compounds, composition, and methods for photodynamic therapy
    • 用于光动力疗法的化合物,组合物和方法
    • US06828439B1
    • 2004-12-07
    • US09913924
    • 2001-08-20
    • Jeffrey M. ZaleskiDiwan Singh Rawat
    • Jeffrey M. ZaleskiDiwan Singh Rawat
    • C07F1100
    • C07F9/5027
    • Disclosed are novel compounds, compositions, and methods that are particularly useful in photodynamic therapy. In particular, the inventive compounds, compositions, and methods relate to the formation of cytotoxic radical species in the presence of light. Significantly, the compounds, compositions, and methods of the present invention do not require the presence of oxygen in the photodynamic therapy and, as such, rely on a unimolecular mechanism for producing the radicals. The inventive compounds, compositions, and methods can be used, for example, in the treatment of cancers as well as infections caused by microorganisms such as protozoa, fungi, bacteria, and viruses.
    • 公开了在光动力疗法中特别有用的新型化合物,组合物和方法。 特别地,本发明的化合物,组合物和方法涉及在光存在下细胞毒性自由基物质的形成。 重要的是,本发明的化合物,组合物和方法不需要在光动力学治疗中存在氧,因此依赖于用于产生自由基的单分子机制。 本发明的化合物,组合物和方法可用于例如癌症的治疗以及由微生物如原生动物,真菌,细菌和病毒引起的感染。
    • 2. 发明授权
    • Catalysts for hydrogenation and hydrosilylation, methods of making and using the same
    • 用于氢化和氢化硅烷化的催化剂,其制备和使用方法
    • US06737531B1
    • 2004-05-18
    • US10320954
    • 2002-12-17
    • Vladimir K. DioumaevR. Morris Bullock
    • Vladimir K. DioumaevR. Morris Bullock
    • C07F1100
    • C07F17/00B01J23/28B01J23/30B01J31/20B01J31/2265B01J31/2273B01J31/2295B01J2231/323B01J2231/645B01J2531/64B01J2531/66C07C29/141C07C29/145C07F7/188C07C31/125
    • A compound is provided including an organometallic complex represented by the formula I: [CpM(CO)2(NHC)Lk]+A−  I wherein M is an atom of molybdenum or tangsten, Cp is substituted or unsubstituted cyclopentadienyl radical represented by the formula [C5Q1Q2Q3Q4Q5], wherein Q1 to Q5 are independently selected from the group consisting of H radical, C1-20 hydrocarbyl radical, substituted hydrocarbyl radical, halogen radical, halogen-substituted hydrocarbyl radical, —OR, —C(O)R′, —CO2R′, —SiR′3 and —NR′R″, wherein R′ and R″ are independently selected from the group consisting of H radical, C1-20 hydrocarbyl radical, halogen radical, and halogen-substituted hydrocarbyl radical, wherein said Q1 to Q5 radicals are optionally linked to each other to form a stable bridging group, NHC is any N-heterocyclic carbene ligand, L is either any neutral electron donor ligand, wherein k is a number from 0 to 1 or L is an anionic ligand wherein k is 2, and A− is an anion. Processes using the organometallic complex as catalyst for hydrogenation of aldehydes and ketones are provided. Processes using the organometallic complex as catalyst for the hydrosilylation of aldehydes, ketones and esters are also provided.
    • 提供了包括由式I表示的有机金属络合物的化合物:其中M是钼或tangsten的原子,Cp是由式[C 10 Q 1 Q 2 Q Q 3 Q 3表示的取代或未取代的环戊二烯基, 其中Q 1至Q 5独立地选自H基,C 1-20烃基,取代的烃基,卤素基团,卤素取代的烃基,-OR ,-C(O)R', - CO 2 R',-SiR'3和-NR'R“,其中R'和R”独立地选自H基,C 1-20烃基,卤素 基团和卤素取代的烃基,其中所述Q 1至Q 5基团彼此任选连接以形成稳定的桥连基团,NHC为任何N-杂环卡宾配体,L为任何中性电子给体 配体,其中k为0至1的数,或L为阴离子配体,其中k为2,A 1为阴离子。 提供了使用有机金属络合物作为醛和酮氢化的催化剂的方法。 还提供了使用有机金属络合物作为醛,酮和酯的氢化硅烷化的催化剂的方法。
    • 4. 发明授权
    • MOCVD molybdenum nitride diffusion barrier for CU metallization
    • 用于CU金属化的MOCVD钼氮化物扩散阻挡层
    • US06359160B1
    • 2002-03-19
    • US09590123
    • 2000-06-09
    • Shi-Chung SunHien-Tien Chiu
    • Shi-Chung SunHien-Tien Chiu
    • C07F1100
    • H01L21/76856C23C16/34H01L21/28556H01L21/76843
    • A new method of forming a molybdenum nitride barrier layer by chemical vapor deposition from the precursor bisdiethylamido-bistertbutylimido-molybdenum (BDBTM) as a diffusion barrier for copper metallization is described. Semiconductor device structures are provided in and on a semiconductor substrate. An insulating layer is deposited overlying the sermiconductor device structures. A via opening is etched through the insulating layer to contact one of the semiconductor device structures. A barrier layer of molybdenum nitride is conformally deposited by chemical vapor deposition within the via. A layer of copper is deposited overlying the molybdenum nitride barrier layer wherein the molybdenum nitride barrier layer prevents copper diffusion to complete the copper metallization in the fabrication of an integrated circuit device.
    • 描述了通过化学气相沉积从作为铜金属化的扩散阻挡层的前体双二乙基氨基 - 二乙基亚胺基 - 钼(BDBTM)形成氮化钼阻挡层的新方法。 半导体器件结构设置在半导体衬底中和半导体衬底上。 绝缘层沉积在半导体器件结构上。 通孔绝缘层被蚀刻以接触半导体器件结构之一。 通过化学气相沉积在通孔内共形沉积氮化钼的阻挡层。 覆盖氮化钼阻挡层上的一层铜沉积,其中氮化钼阻挡层在制造集成电路器件时防止铜扩散完成铜金属化。
    • 7. 发明授权
    • Metal nitrido complexes
    • 金属氮化合物
    • US06462213B1
    • 2002-10-08
    • US09484952
    • 2000-01-18
    • Christopher C. CumminsCatalina E. Laplaza
    • Christopher C. CumminsCatalina E. Laplaza
    • C07F1100
    • C07F11/005C01C1/04Y02P20/52
    • A method for the generation of ammonia from dinitrogen is provided including reacting a three coordinate, low oxidation state transition metal complex with dinitrogen under substantially atmospheric pressures to obtain a metal-nitrido complex, whereby the oxidation state of the metal complex increases, and reducing the metal of the metal nitrido complex in the presence of a hydrogen source, so as to obtain NH3. A novel metal complex is provided which is capable of cleaving small molecules which includes a metal selected from the group consisting of molybdenum, titanium, vanadium, niobium, tungsten, uranium and chromium. The compound may have the formula M(NR1R2)3 where M is a transition metal; R1 and R2 are independently selected from the group consisting of tertiary alkyls, phenyls and substituted phenyls. The compound permits cleavage of nitrogen-nitrogen triple bonds.
    • 提供了一种从二氮生成氨的方法,包括在基本上大气压下使三配位低氧化态过渡金属络合物与二氮化合反应,得到金属 - 氮化物络合物,由此金属络合物的氧化态增加, 金属的硝基络合物在氢源的存在下,以获得NH 3。 提供了能够切割小分子的新型金属络合物,其包括选自钼,钛,钒,铌,钨,铀和铬的金属。 化合物可以具有式M(NR 1 R 2)3,其中M是过渡金属; R 1和R 2独立地选自叔烷基,苯基和取代的苯基。 该化合物允许氮 - 氮三键裂解。
    • 10. 发明授权
    • Catalysts for olefin selective epoxidation with atmospheric oxygen
    • 用于烯烃选择性环氧化与大气氧的催化剂
    • US06248913B1
    • 2001-06-19
    • US09462451
    • 2000-01-07
    • Gerhard LobmaierWolfgang Anton HerrmannRolf Peter Schulz
    • Gerhard LobmaierWolfgang Anton HerrmannRolf Peter Schulz
    • C07F1100
    • C07D301/08B01J31/1616B01J31/2243B01J2231/72B01J2531/64C07D301/06
    • A catalyst for the selective oxidation of olefins in the presence of air or oxygen, comprising a compound of the formula (1) MoxOy(L)z  (1) where x is 1, 2 or 3, y is an integer from 0 to 2x+1, z is an integer from 1 to 2x, wherein the ligand L is a compound of the formula (2) or (3)  where n is 0 or 1, X is a nitrogen, oxygen or sulfur atom, Y is hydrogen, C1-C8-alkyl, C1-C8-alkoxy, F, Cl, Br, I, COOCH3, C6-C14-aryl or C3-C8-cycloalkyl, R3 and R4 form a ring containing from 4 to 8 carbon atoms onto which one or two aromatic rings may be fused, R1 and R2 are hydrogen, branched or straight-chain C1-C12-alkyl or branched or straight-chain C1-C12-haloalkyl which substitute the ring formed by R3 and R4 and/or the rings fused onto this ring, or the ligand L is a compound of the formula (4) or (5) where R is hydrogen, C1-C8-alkyl, C1-C8-alkoxy, COOCH3, carbonyl oxygen, C6-C14-aryl or C3-C8-cycloalkyl and n is 1 or 2 and m is from 1 to 6.
    • 在空气或氧气存在下选择性氧化烯烃的催化剂,其包含式(1)的化合物,其中x为1,2或3,y为0至2×+ 1的整数,z为1的整数 至2,其中配体L为式(2)或(3)的化合物,其中n为0或1,X为氮,氧或硫原子,Y为氢,C1-C8-烷基,C1-C8-烷基, 烷氧基,F,Cl,Br,I,COOCH 3,C 6 -C 14 - 芳基或C 3 -C 8 - 环烷基,R 3和R 4形成含有4至8个碳原子的环,一个或两个芳环可以被稠合,R1和 R2是取代由R3和R4形成的环和/或稠合到该环上的环的氢,支链或直链C 1 -C 12烷基或支链或直链C 1 -C 12 - 卤代烷基,或配体L是 式(4)或(5)的化合物,其中R是氢,C 1 -C 8 - 烷基,C 1 -C 8 - 烷氧基,COOCH 3,羰基氧,C 6 -C 14 - 芳基或C 3 -C 8 - 环烷基,n是1或2 m为1〜6。