会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 5. 发明授权
    • Field-effect storage tube
    • 现场效应管
    • US3825791A
    • 1974-07-23
    • US26787872
    • 1972-06-30
    • IBM
    • KAZAN B
    • H01J29/10H01J31/12H01J31/08H01J29/08
    • H01J29/10H01J31/122
    • A field-effect storage cathode ray tube with layer of electroluminescent phosphor external to the tube to allow removal and replacement thereof. The inner surface of the tube faceplace is contacted with a conductive mesh. A layer of semicondutor then contacts the exposed inner surface of the faceplate in the mesh openings and a layer of insulator contacts the layer of semiconductor. An array of conductive pins extends through the faceplate from the layer of phosphor in contact with its outer surface to the semiconductor within the respective mesh openings. A charge pattern written on the layer of insulator acts to vary local conductivity in the semiconductor and thus vary alternating current flow through local pins to cause a pattern of light emission from the phosphor corresponding to the charge pattern.
    • 一种场效应存储阴极射线管,其具有位于管外部的电致发光磷光体层,以允许其移除和更换。 管面的内表面与导电网接触。 半导体层然后与网孔中的面板的暴露的内表面接触,并且一层绝缘体接触半导体层。 导电针阵列从与其外表面接触的磷光体层延伸穿过面板到相应的网孔内的半导体。 写在绝缘层上的电荷图案用于改变半导体中的局部导电性,从而改变通过本地引脚的交流电流,从而引起来自对应于电荷图案的荧光体的发光图案。
    • 6. 发明授权
    • Direct viewing bistable storage tube having fast erase speed
    • 直接查看具有快速擦除速度的双向存储管
    • US3594607A
    • 1971-07-20
    • US3594607D
    • 1970-04-10
    • TEKTRONIX INC
    • FRANKLAND ROGER A
    • H01J29/10H01J31/12
    • H01J29/10H01J31/122
    • A direct viewing bistable storage tube is described having a storage dielectric layer of phosphor material supported on the glass faceplate of such tube with a light transparent target electrode provided beneath such phosphor layer and a collector electrode in contact with the opposite side of such phosphor layer. High image resolution results from providing the collector electrode as a very fine mesh coating on the phosphor layer. The target electrode may be used as an erase electrode and because it is separate from the collector electrode the tube is provided with a faster erase speed, of about 1 to 50 milliseconds. Thus, the voltage on the collector electrode can be set for optimum secondary electron collection during erasure, as well as during storage, while the voltage of the erase electrode can be varied to provide an erase pulse of the proper amplitude and time for optimum erasure. The erase electrode can be split into a plurality of insulated conductive areas to provide independent operation of different portions of the storage dielectric in a storage or nonstorage mode. An intermediate layer of light transparent insulating material, such as silicon dioxide, may be provided between the target electrode and the phosphor layer to increase the voltage breakdown strength of the dielectric.