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1. 发明授权

US3719291A Diffusion furnace loader 失效
标题翻译：扩散炉加载器
公开(公告)号：US3719291A
公开(公告)日：1973-03-06
申请号：US3719291D
申请日：1971-07-28
申请人： SIMMONDS PRECISION PRODUCTS
发明人： REDAN J
IPC分类号： C30B31/10 , F27B9/26
CPC分类号： C30B31/106 , Y10S254/06
摘要： A furnace-loading mechanism for use with a diffusion furnace, the components thereof facilitating the entry and withdrawal of a wafer-bearing quartz boat member relative to a furnace through an articulated chain link construction which is capable of storage in a horizontal plane on the loader.
摘要翻译：一种与扩散炉一起使用的炉装载机构，其组件有助于通过铰接式链节结构相对于炉子进入和取出带晶圆的石英舟构件，该铰接链节结构能够在装载机上的水平面中存储。

2. 发明授权

US3615944A Method for the continuous doping of semiconductor materials 失效
标题翻译：连续掺杂半导体材料的方法
公开(公告)号：US3615944A
公开(公告)日：1971-10-26
申请号：US3615944D
申请日：1968-12-13
申请人： CORNING GLASS WORKS
发明人： SHENG HENRY P , WOOTEN F THOMAS
IPC分类号： C30B31/10 , H01L21/00 , H01L7/44
CPC分类号： C30B31/106 , H01L21/00 , Y10S118/90 , Y10S148/006 , Y10S148/037 , Y10S148/049 , Y10S438/907 , Y10S438/909 , Y10S438/935
摘要： A method for continuously doping semicondcutor materials whereby the materials are placed in separate chambers which are sequentially exposed to preheating, doping and cooling.

3. 发明授权

US3193267A Apparatus for continuous gas diffusion 失效
标题翻译：连续气体扩散装置
公开(公告)号：US3193267A
公开(公告)日：1965-07-06
申请号：US12793261
申请日：1961-07-31
申请人： BTU ENG CORP
发明人： HOWARD BECK JACOB
IPC分类号： C30B31/10
CPC分类号： C30B31/106 , Y10S118/90

4. 发明授权

US4098223A Apparatus for heat treating semiconductor wafers 失效
标题翻译：用于热处理半导体晶片的设备
公开(公告)号：US4098223A
公开(公告)日：1978-07-04
申请号：US738675
申请日：1976-11-04
申请人： Wilhelm Ertl , Helmut Guckel , Hugo Ruchardt , Fritz Schneckenaichner
发明人： Wilhelm Ertl , Helmut Guckel , Hugo Ruchardt , Fritz Schneckenaichner
IPC分类号： B65G33/06 , C30B31/10 , C30B31/14 , H01L21/324 , C23C11/00 , B05C13/02
CPC分类号： H01L21/324 , B65G33/06 , C30B31/106 , C30B31/14
摘要： Method of heat treating semiconductor wafers in a continuous operation wherein the wafers are initially introduced into a tube where they are subjected to a heat treatment and then removed from the tube. The wafers are transported through the tube by a pair of horizontally disposed rods on which they are carried and by an additional guide rod which is located above the horizontal plane of the first rods. All three rods have a groove in the form of a screw thread into which the wafers may be seated. All three rods are caused to rotate in the same direction and the frictional contact of the wafers with the walls of each groove causes the wafers to rotate in the opposite direction from the rods while at the same time causing them to advance through the tube while being heated. If it is desired to have the entry speed and the exit speed to be faster or slower than that through the main body of the tube, the pitch of the screw thread may be increased or decreased, respectively, at the entrance and exit of the tube. The rods are preferably made of the same semiconductor material as the wafers.
摘要翻译：在连续操作中对半导体晶片进行热处理的方法，其中晶片最初被引入管中，在其中它们经受热处理，然后从管中取出。晶片通过一对水平布置的杆被运送通过管子，它们被承载在该管上，并且通过位于第一杆的水平面上方的附加导杆。所有三个杆具有螺纹形式的凹槽，晶片可以放在其中。导致所有三个杆在相同的方向上旋转，并且晶片与每个槽的壁的摩擦接触导致晶片沿着与杆相反的方向旋转，同时使它们通过管前进，同时加热。如果希望入口速度和出口速度比通过管的主体更快或更慢，则螺纹的间距可以分别在管的入口和出口处增加或减小。杆优选由与晶片相同的半导体材料制成。

5. 发明授权

US3805736A Apparatus for diffusion limited mass transport 失效
标题翻译：用于扩大有限大量运输的装置
公开(公告)号：US3805736A
公开(公告)日：1974-04-23
申请号：US37530873
申请日：1973-06-29
申请人： IBM
发明人： FOEHRING R , GARNACHE R , KENNEY D
IPC分类号： C30B31/10 , C30B31/12 , C30B31/16 , C23C13/10
CPC分类号： C30B31/16 , C30B31/106 , C30B31/12 , Y10S148/006 , Y10S148/12
摘要： Apparatus for continuously carrying out mass transfer reactions in a reaction chamber utilizing laminar flow to provide diffusion limited transport and to provide isolation between process steps. There is provided a gaseous phase material inlet filter tube to introduce gaseous phase material in laminar flow within a reaction zone and an exhaust pressure baffle to maintain laminar flow throughout the reaction zone. Substrates may be continuously passed through a reaction zone to provide an inline system.
摘要翻译：用于在反应室中连续进行质量传递反应的装置，其利用层流以提供扩散限制的传输并在工艺步骤之间提供隔离。提供了一种气相材料入口过滤管，以在反应区内的层流中引入气相物质和排气压力挡板，以保持整个反应区域中的层流。底物可以连续地通过反应区以提供在线系统。

6. 发明授权

US3473510A Method and apparatus for the continuous doping of semiconductor materials 失效
标题翻译：用于连续掺杂的半导体材料的方法和装置
公开(公告)号：US3473510A
公开(公告)日：1969-10-21
申请号：US3473510D
申请日：1966-02-23
申请人： CORNING GLASS WORKS
发明人： SHENG HENRY P , WOOTEN FRANK THOMAS
IPC分类号： C30B31/10 , C30B31/16 , H01L21/00 , C23C13/04 , H01L7/36
CPC分类号： C30B31/16 , C30B31/106 , H01L21/00 , Y10S118/90 , Y10S148/006 , Y10S438/907

7. 发明授权

US4147432A Apparatus for thermal diffusion by high frequency induction heating of semiconductor substrates 失效
标题翻译：用于通过半导体衬底的高频感应加热进行热扩散的装置
公开(公告)号：US4147432A
公开(公告)日：1979-04-03
申请号：US744049
申请日：1976-11-22
申请人： Masao Yamawaki , Katsuo Aoki , Yoshio Oka , Takao Suzuki , Masahiko Amano , Hideki Ozaki , Osamu Ishihara
发明人： Masao Yamawaki , Katsuo Aoki , Yoshio Oka , Takao Suzuki , Masahiko Amano , Hideki Ozaki , Osamu Ishihara
IPC分类号： C30B31/06 , B65G49/07 , C30B31/10 , C30B31/12 , H01L21/00 , H01L21/205 , H01L21/22 , H01L21/677 , C23C13/08
CPC分类号： H01L21/67103 , C30B31/106 , C30B31/12 , Y10S414/135
摘要： This invention relates to an apparatus for thermal diffusion by means of high frequency induction heating suitable for mass production of semiconductor substrates of uniform quality; wherein a plurality of heating bases, each made of a material having good electric conductivity, and carrying semiconductor substrates, are continuously fed through a furnace tube where the bases are heated by means of high frequency wave excitation in order that each semiconductor substrate receives substantially the same thermal treatment.
摘要翻译：本发明涉及一种适用于批量生产质量均匀的半导体衬底的高频感应加热热扩散装置。其中，由导电性良好的材料构成的多个加热基底和载持半导体基板的加热基板通过高频波激励而被加热的炉管连续供给，以使得每个半导体基板基本上接收同样的热处理。

8. 发明授权

US4075972A Apparatus for thermal diffusion of semiconductor devices 失效
标题翻译：半导体器件的热扩散装置
公开(公告)号：US4075972A
公开(公告)日：1978-02-28
申请号：US714806
申请日：1976-08-16
申请人： Masao Yamawaki , Katsuo Aoki , Osamu Ina , Takao Suzuki , Yoshio Oka , Kunihiko Hara
发明人： Masao Yamawaki , Katsuo Aoki , Osamu Ina , Takao Suzuki , Yoshio Oka , Kunihiko Hara
IPC分类号： C30B31/06 , C30B31/10 , C23C13/12
CPC分类号： C30B31/06 , C30B31/106 , Y10S414/14
摘要： The invention discloses an apparatus for thermal diffusion of semiconductor devices, wherein a plurality of wafer boats each made of a refractory material and adapted to carry a predetermined number of wafers to be processed are sequentially fed into a furnace tube containing a high temperature, diffusion gas atmosphere and continuously transported at a predetermined speed through the furnace tube so that each wafer may have substantially the same thermal treatment and high productivity may be attained.
摘要翻译：本发明公开了一种用于半导体器件的热扩散的装置，其中由耐火材料制成并适于承载预定数量待处理的晶片的多个晶片舟片依次送入含有高温扩散气体通过炉管以预定速度连续输送，使得每个晶片可以具有基本上相同的热处理，并且可以获得高生产率。

9. 发明授权

US3907607A Continuous processing of ribbon material 失效
标题翻译：丝带材料的连续加工
公开(公告)号：US3907607A
公开(公告)日：1975-09-23
申请号：US25461072
申请日：1972-05-18
申请人： CORNING GLASS WORKS
发明人： CHU BING C , FISCHER DAVID J , KUNZ HANS J
IPC分类号： C23C16/54 , C30B31/10 , C30B31/12 , C30B31/16 , C30B33/00 , H01L21/00 , H01L21/223 , H01L21/316 , H01L23/29 , H01L7/44
CPC分类号： H01L21/00 , C23C16/545 , C30B31/106 , C30B31/12 , C30B31/16 , C30B33/005 , H01L21/02129 , H01L21/02238 , H01L21/02255 , H01L21/02271 , H01L21/223 , H01L21/31662 , H01L23/29 , H01L2924/0002 , Y10S148/006 , Y10S148/051 , Y10S438/907 , H01L2924/00
摘要： A method for continuously processing elongated ribbons or webs of materials such as semiconductors, metals or glasses. Both ends of a tubular reaction chamber disposed in a heating system are provided with end caps which accommodate all gas inlet and outlet connections and which act as gas locks. A mixture of reactant and carrier gas enters the furnace through one end cap and leaves the furnace through the other. This furnace may be used for such chemical processes as diffusion, surface oxidation, etching, metallization and other pyrolytic processes.
摘要翻译：用于连续处理诸如半导体，金属或玻璃的材料的细长条带或网状物的方法。设置在加热系统中的管状反应室的两端设置有容纳所有气体入口和出口连接并用作气体锁的端盖。反应物和载气的混合物通过一个端盖进入炉中，并通过另一端离开炉。该炉可用于诸如扩散，表面氧化，蚀刻，金属化和其它热解过程之类的化学过程。

10. 发明授权

US3811826A Diffusion furnace process tube 失效
标题翻译：扩散炉工艺管
公开(公告)号：US3811826A
公开(公告)日：1974-05-21
申请号：US30365272
申请日：1972-11-03
申请人： SOWELL J
发明人： ENDERLEIN H
IPC分类号： C30B31/10 , C30B31/16 , F27B5/04 , F27B11/08
CPC分类号： C30B31/16 , C30B31/106
摘要： An improved process tube having a plurality of chambers on the process tunnel of the tube, two process gas chambers straddling the hot-zone of the process tube provide introduction and exhaust of process gases to the hot-zone, and two chambers straddling the process gas chambers provide gas curtains to restrict the process gases to the process tunnel intermediate the two process gas chambers.

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