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    • 3. 发明申请
    • METHOD FOR PRODUCING AN ORGANIC SEMICONDUCTOR DEVICE
    • 用于生产有机半导体器件的方法
    • US20130200336A1
    • 2013-08-08
    • US13365673
    • 2012-02-03
    • Subramanian VAIDYANATHANMarcel KastlerBertha TanMi Zhou
    • Subramanian VAIDYANATHANMarcel KastlerBertha TanMi Zhou
    • H01L51/30H01L51/40
    • C08G61/126C08G2261/124C08G2261/1412C08G2261/146C08G2261/312C08G2261/3223C08G2261/3229C08G2261/3246C08G2261/3327C08G2261/334C08G2261/344C08G2261/364C08G2261/414C08G2261/51C08G2261/92H01L51/0036H01L51/0043H01L51/0558
    • A method for producing an organic semiconductor device (110) having at least one organic semiconducting material (122) and at least two electrodes (114) adapted to support an electric charge carrier transport through the organic semiconducting material (122) is disclosed. The organic semiconducting material (122) intrinsically has ambipolar semiconducting properties. The method comprises at least one step of generating at least one intermediate layer (120) which at least partially is interposed between the organic semiconducting material (122) and at least one of the electrodes (114) of the organic semiconductor device (110). The intermediate layer (120) comprises at least one thiol compound having the general formula HS—R, wherein R is an organic residue. The thiol compound has an electric dipole moment pointing away from the SH-group of the thiol compound. The electric dipole moment has at least the same magnitude as the electric dipole moment in 4-Phenylthiophenol. By the intermediate layer (120) an ambipolar charge carrier transport between the electrodes (114) is suppressed in favor of a unipolar charge carrier transport.
    • 公开了一种用于制造具有至少一种有机半导体材料(122)和至少两个电极(114)的有机半导体器件(110)的方法,所述至少两个电极(114)适于支持通过有机半导体材料(122)传输的电荷载流子。 有机半导体材料(122)本身具有双极性半导体性质。 所述方法包括产生至少一个中间层(120)的至少一个步骤,所述中间层至少部分地介于有机半导体材料(122)和有机半导体器件(110)的至少一个电极(114)之间。 中间层(120)包含至少一种具有通式HS-R的硫醇化合物,其中R是有机残基。 硫醇化合物具有指向远离硫醇化合物的SH基团的电偶极矩。 电偶极矩与4-苯基苯硫酚中的电偶极矩至少相同。 通过中间层(120),电极(114)之间的双极电荷载流子传输被抑制以有利于单极电荷载流子传输。
    • 5. 发明申请
    • PROCESS FOR PREPARING REGIOREGULAR POLY-(3-SUBSTITUTED) THIOPHENES, SELENOPHENES, THIAZOLES AND SELENAZOLES
    • 制备邻苯二酚(3-取代的)噻吩,苯丙烯,噻唑和精油的方法
    • US20120088900A1
    • 2012-04-12
    • US13378069
    • 2010-06-14
    • Marcel KastlerSilke Annika Koehler
    • Marcel KastlerSilke Annika Koehler
    • C08G75/00
    • H01B1/127C08G61/123C08G61/126C08G2261/3223C08G2261/3225C08G2261/3229C08G2261/323C08G2261/416C08G2261/417H01L51/0036
    • A process for preparing a regioregular homopolymer or copolymer of 3-substituted thiophene, 3-substituted selenophene, 3-substituted thiazol or 3-substituted selenazol by a) reacting a 3-substituted 2,5-dihalothiophene, 2,5-dihaloselenophene, 2,5-dihalothiazol or 2,5-dihaloselenazol with reactive zinc, magnesium and/or an organomagnesium halide to give an organozinc or organomagnesium intermediate containing one halozinc or one halomagnesium group, b) bringing the organozinc or the organomagnesium intermediate into contact with a Ni(II), Ni(O), Pd(II) or Pd(O) catalyst to initiate the polymerization reaction, and c) polymerizing the organozinc or the organomagnesium intermediate to give a regioregular head-to-tail homopolymer or copolymer of 3-substituted thiophene, 3-substituted selenophene, 3-substituted thiazol or 3-substituted selenazol characterized in that the polymerization reaction is carried out at a temperature rising from a lower temperature T1 to a higher temperature T2 during a time t1, wherein T1 is in the range of from −40 to 5 ° C. and T2 is in the range of from −20 to 40 ° C., wherein T2−T1 is at least 10 ° C. and the average rate of increase (T2−T1)/t1 is in the range of from 0.05 ° C/min to 1 ° C/min.
    • 制备3-取代噻吩,3-取代的硒吩,3-取代的噻唑或3-取代的硒吩的区域性均聚物或共聚物的方法,通过以下步骤a)使3-取代的2,5-二卤代噻吩,2,5-二卤代硒吩,2 ,5-二卤噻唑或2,5-二卤代硒唑与反应性锌,镁和/或有机卤化镁反应,得到含有一个卤素或一个卤代镁基团的有机锌或有机镁中间体,b)使有机锌或有机镁中间体与Ni (II),Ni(O),Pd(II)或Pd(O)催化剂以引发聚合反应,以及c)使有机锌或有机镁中间体聚合,得到区域性的头 - 尾均聚物或3- 取代噻吩,3-取代硒吩,3-取代噻唑或3-取代硒吩,其特征在于聚合反应在从较低温度T1升高至更高温度T2 dur的温度下进行 时间t1,其中T1在-40至5℃的范围内,T2在-20至40℃的范围内,其中T2-T1至少为10℃,平均值为 增加率(T2-T1)/ t1在0.05℃/分钟至1℃/分钟的范围内。