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1. 发明公开

US20230364675A1 METHODS OF FORMING POLYCRYSTALLINE COMPACTS 审中-公开
公开(公告)号：US20230364675A1
公开(公告)日：2023-11-16
申请号：US18319062
申请日：2023-05-17
申请人： Baker Hughes Holdings LLC
发明人： Danny E. Scott , Anthony A. DiGiovanni , Gaurav Agrawal , Soma Chakraborty
IPC分类号： B22F3/14 , B01J3/06 , B24D99/00 , B82Y30/00 , C04B35/52 , C04B35/56 , C04B35/565 , C04B35/5831 , C04B35/584 , C04B35/63 , C04B35/645 , C22C26/00 , E21B10/567
CPC分类号： B22F3/14 , B01J3/062 , B24D99/00 , B82Y30/00 , C04B35/52 , C04B35/5607 , C04B35/5611 , C04B35/5626 , C04B35/565 , C04B35/5831 , C04B35/584 , C04B35/6303 , C04B35/645 , C22C26/00 , E21B10/567 , B01J2203/063 , B01J2203/0635 , B01J2203/0645 , B22F2005/001
摘要： Polycrystalline compacts include a polycrystalline superabrasive material comprising a first plurality of grains of superabrasive material having a first average grain size and a second plurality of grains of superabrasive material having a second average grain size smaller than the first average grain size. The first plurality of grains is dispersed within a substantially continuous matrix of the second plurality of grains. Earth-boring tools may include a body and at least one polycrystalline compact attached thereto. Methods of forming polycrystalline compacts may include coating relatively larger grains of superabrasive material with relatively smaller grains of superabrasive material, forming a green structure comprising the coated grains, and sintering the green structure. Other methods include mixing diamond grains with a catalyst and subjecting the mixture to a pressure greater than about five gigapascals (5.0 GPa) and a temperature greater than about 1,300° C. to form a polycrystalline diamond compact.

2. 发明申请

US20170037688A1 POLYCRYSTALLINE COMPACTS, EARTH-BORING TOOLS INCLUDING SUCH COMPACTS, AND METHODS OF FABRICATING POLYCRYSTALLINE COMPACTS 审中-公开
标题翻译：聚合物复合材料，包括这种复合材料的接地工具以及制备聚合物复合材料的方法
公开(公告)号：US20170037688A1
公开(公告)日：2017-02-09
申请号：US15297882
申请日：2016-10-19
申请人： Baker Hughes Incorporated
发明人： Valery N. Khabashesku , Vladimir P. Filonenko
IPC分类号： E21B10/567 , B24D3/06 , B24D18/00
CPC分类号： E21B10/567 , B01J3/062 , B01J2203/062 , B01J2203/063 , B01J2203/0635 , B01J2203/0645 , B01J2203/0655 , B01J2203/066 , B01J2203/0665 , B01J2203/067 , B01J2203/0685 , B24D3/06 , B24D18/0009
摘要： A polycrystalline compact includes diamond, cubic boron nitride, and at least one hard material, which may be aluminum nitride, gallium nitride, silicon nitride, titanium nitride, silicon carbide, titanium carbide, titanium boride, titanium diboride, and/or aluminum boride. The diamond, the cubic boron nitride, and the hard material are intermixed and interbonded to form a polycrystalline material. An earth-boring tool includes a bit body and a polycrystalline diamond compact secured to the bit body. Methods of fabricating polycrystalline compacts include forming a mixture comprising diamond, non-cubic boron nitride, and a metal or semimetal; encapsulating the mixture in a container; and subjecting the encapsulated mixture to high-pressure and high-temperature conditions to form a polycrystalline material.
摘要翻译：多晶结构体包括金刚石，立方氮化硼和至少一种硬质材料，其可以是氮化铝，氮化镓，氮化硅，氮化钛，碳化硅，碳化钛，硼化钛，二硼化钛和/或硼化铝。将金刚石，立方氮化硼和硬质材料混合并键合以形成多晶材料。钻孔工具包括固定在钻头体上的钻头体和多晶金刚石块。制造多晶压块的方法包括形成包含金刚石，非立方氮化硼和金属或半金属的混合物; 将混合物包封在容器中; 并将包封的混合物经受高压和高温条件以形成多晶材料。

3. 发明授权

US06616725B2 Self-grown monopoly compact grit 失效
标题翻译：自制垄断紧凑砂砾
公开(公告)号：US06616725B2
公开(公告)日：2003-09-09
申请号：US09934459
申请日：2001-08-21
申请人： Hyun Sam Cho , John Chen , Kyung Yul Han
发明人： Hyun Sam Cho , John Chen , Kyung Yul Han
IPC分类号： B24D300
CPC分类号： B22F1/025 , B01J3/062 , B01J2203/061 , B01J2203/062 , B01J2203/063 , B01J2203/0635 , B01J2203/0645 , B01J2203/0655 , B01J2203/066 , B01J2203/068 , C04B35/52 , C04B35/5626 , C04B35/5831 , C04B35/6303 , C04B35/645 , C04B2235/386 , C04B2235/402 , C04B2235/404 , C04B2235/405 , C04B2235/427 , C04B2235/428 , C04B2235/5276 , C04B2235/528 , C04B2235/5436 , Y10T428/30
摘要： A self-grown monopoly compact grit and high pressure, high temperature process for preparing the same. The high pressure, high temperature sintered/synthesized monopoly compact grit is used in various industrial tools such as saw blades, grinding wheels, cutting tools and drill bits. Further, the monopoly compact grit of the present invention is produced from a seed of a mono-crystal of diamond or cubic boron nitride surrounded by either a self-grown crystal layer or an integrally bonded poly-crystalline sintered compact layer. The self-grown crystal layer is a new grown crystal structure where the seed crystal grows into a new phase through a normal diamond or cubic boron nitride synthesis process in the presence of a catalyst metal solvent. The compact layer is composed of about 50 to about 90 volume percent of diamond or cubic boron nitride, a typical binder material, which is a catalyst for crystal-to-crystal bonding, and a cementing agent which is a binding agent capable of forming stable carbide and nitride bonds.
摘要翻译：自生成垄断的紧凑砂砾和高压，高温工艺制备相同。高压，高温烧结/合成的垄断压实砂砾用于各种工业工具，如锯片，砂轮，切削工具和钻头。此外，本发明的垄断压块砂砾由金刚石或立方氮化硼的单晶种子生产，其由自生长晶体层或整体结合的多晶烧结致密层包围。自生晶体层是新生长的晶体结构，其中晶种在催化剂金属溶剂存在下通过正常的金刚石或立方氮化硼合成工艺生长成新相。致密层由约50至约90体积％的金刚石或立方氮化硼组成，典型的粘合剂材料是用于晶体 - 晶体结合的催化剂，和作为能够形成稳定的粘合剂的粘合剂碳化物和氮化物键。

4. 发明授权

US5756061A Diamond synthesis from silicon carbide 失效
标题翻译：钻石从碳化硅合成
公开(公告)号：US5756061A
公开(公告)日：1998-05-26
申请号：US796932
申请日：1991-11-25
申请人： John L. White
发明人： John L. White
IPC分类号： B01J3/06 , C01B31/06
CPC分类号： C01B31/06 , B01J3/062 , B01J2203/0605 , B01J2203/0635 , B01J2203/0655 , B01J2203/068
摘要： Diamonds are synthesized from SiC at temperatures and/or pressures lower than those required to convert amorphous carbon or graphite to diamond, by heating the SiC in the absence of another non-diamondaceous source of elemental carbon and in the presence of a reactant which selectively reacts with the Si at the temperature to which the SiC is heated, and in a matrix which is frangible when cooled, while the Sic is within the diamond stable region of the diamond-graphite phase diagram, thereby permitting the diamond to be separated therefrom by physical means.
摘要翻译：在不存在另外非金刚石元素碳的情况下加热SiC并且在有选择地反应的反应物的存在下，通过在不存在另外的非金刚石的元素碳的情况下加热SiC，在低于通过将无定形碳或石墨转化为金刚石所需要的温度和/或压力下，其中Si在加热SiC的温度下，以及当被冷却时易碎的基体，而Sic位于金刚石 - 石墨相图的金刚石稳定区域内，从而允许金刚石与物理层分离手段。

5. 发明授权

US4380471A Polycrystalline diamond and cemented carbide substrate and synthesizing process therefor 失效
标题翻译：多晶金刚石和硬质合金基板及其合成工艺
公开(公告)号：US4380471A
公开(公告)日：1983-04-19
申请号：US222812
申请日：1981-01-05
申请人： Minyoung Lee , Lawrence E. Szala , Roy E. Tuft
发明人： Minyoung Lee , Lawrence E. Szala , Roy E. Tuft
IPC分类号： B01J3/06 , B22F7/06 , B24D18/00 , B22F3/14 , B22F7/00 , C04B31/16
CPC分类号： C04B35/645 , B01J3/062 , B22F7/06 , B24D3/06 , C04B35/52 , C04B35/6316 , C04B37/006 , C04B37/021 , C04B37/026 , B01J2203/062 , B01J2203/0635 , B01J2203/0655 , B01J2203/0685 , C04B2235/3826 , C04B2235/40 , C04B2235/427 , C04B2235/428 , C04B2235/5436 , C04B2235/5472 , C04B2235/604 , C04B2235/616 , C04B2235/656 , C04B2235/6567 , C04B2235/80 , C04B2237/122 , C04B2237/363 , C04B2237/401 , C04B2237/60 , C04B2237/61 , C04B2237/706 , C04B2237/708
摘要： A polycrystalline diamond body infiltrated by a silicon atom-containing metal (e.g., silicon alloy) is bonded to a substrate comprising cemented carbide with a barrier of refractory material extending between the diamonds cemented together with silicon atom-containing binder and the substrate substantially precluding migration of the cementing medium (e.g., cobalt) from the carbide substrate into contact with the silicon atom-containing bonding medium in the diamond body. The process comprises subjecting a mass of diamond powder, a quantity of silicon atom-containing metal binder material, a cemented carbide body and a barrier made of material selected from the group consisting of tantalum, vanadium, molybdenum, zirconium, tungsten and alloys thereof to the simultaneous application of elevated temperature and pressure.
摘要翻译：由含硅原子的金属（例如，硅合金）渗透的多晶金刚石体与包含硬质合金的基底结合，所述基底具有在与含硅原子的粘合剂粘合在一起的金刚石和基材之间延伸的耐火材料的屏障，基本上排除迁移的来自碳化物衬底的固化介质（例如钴）与金刚石体中含硅原子的粘合介质接触。该方法包括使金刚石粉末，一定数量的含硅原子的金属粘合剂材料，硬质合金体和由选自钽，钒，钼，锆，钨及其合金的材料制成的阻挡层经受一同时应用高温和高压。

6. 发明授权

US4241135A Polycrystalline diamond body/silicon carbide substrate composite 失效
标题翻译：多晶金刚石体/碳化硅衬底复合材料
公开(公告)号：US4241135A
公开(公告)日：1980-12-23
申请号：US10748
申请日：1979-02-09
申请人： Minyoung Lee , Lawrence E. Szala , Robert C. DeVries
发明人： Minyoung Lee , Lawrence E. Szala , Robert C. DeVries
IPC分类号： B01J3/06 , B22F7/06 , B24D18/00 , B32B18/00 , C04B37/00 , B32B3/26 , B32B5/16
CPC分类号： C04B35/645 , B01J3/062 , B22F7/06 , B24D18/0009 , B32B18/00 , C04B35/52 , C04B35/565 , C04B35/575 , C04B35/6316 , C04B35/6455 , C04B37/001 , B01J2203/062 , B01J2203/0635 , B01J2203/0655 , B01J2203/0685 , C04B2235/3821 , C04B2235/3826 , C04B2235/383 , C04B2235/3834 , C04B2235/3839 , C04B2235/3843 , C04B2235/3847 , C04B2235/3891 , C04B2235/40 , C04B2235/404 , C04B2235/405 , C04B2235/408 , C04B2235/421 , C04B2235/422 , C04B2235/428 , C04B2235/5436 , C04B2235/5472 , C04B2235/616 , C04B2235/658 , C04B2235/6581 , C04B2235/6582 , C04B2235/721 , C04B2235/728 , C04B2235/77 , C04B2235/80 , C04B2235/96 , C04B2235/9607 , C04B2237/361 , C04B2237/363 , C04B2237/365 , C04B2237/525 , C04B2237/61 , C04B2237/704 , Y10S428/911 , Y10T428/24992 , Y10T428/26 , Y10T428/2993 , Y10T428/2995 , Y10T428/30
摘要： A mass of diamond crystals in contact with a mass of eutectiferous silicon-rich alloy and a silicon carbide ceramic substrate are disposed in a container and placed within a pressure transmitting powder medium. Pressure is applied to the powder medium resulting in substantially isostatic pressure being applied to the container and its contents sufficient to dimensionally stabilize the container and its contents. The resulting shaped substantially isostatic system of powder-enveloped container is hot-pressed whereby fluid eutectiferous silicon-rich alloy is produced and infiltrated through the interstices between the diamond crystals and contacts the contacting face of the silicon carbide substrate sufficiently producing, upon cooling, an adherently bonded integral composite.
摘要翻译：与大量共晶富硅合金和碳化硅陶瓷基板接触的大量金刚石晶体设置在容器中并放置在压力传递粉末介质中。压力被施加到粉末介质上，导致基本上均衡的压力被施加到容器及其内容物足以使容器及其内容物尺寸稳定。将所得到的粉末包裹容器的基本均匀的体系进行热压，由此产生流体共晶富含硅的合金并渗入金刚石晶体之间的间隙并与碳化硅衬底的接触面接触，在冷却时，贴合的整体复合材料。

7. 发明授权

US08147574B2 Material containing diamond and an intermetallic compound 失效
标题翻译：含金刚石和金属间化合物的材料
公开(公告)号：US08147574B2
公开(公告)日：2012-04-03
申请号：US12515744
申请日：2007-11-21
申请人： Charles Stephan Montross
发明人： Charles Stephan Montross
IPC分类号： B24D3/02 , C09C1/68 , C09K3/14
CPC分类号： B01J3/062 , B01J2203/062 , B01J2203/063 , B01J2203/0635 , B01J2203/0655 , B01J2203/068 , C22C1/0491 , C22C26/00
摘要： THIS INVENTION relates to a method of making a diamond containing material comprising diamond particles and a second phase containing an intermetallic compound comprising the steps of providing a reaction mass of reactants capable, on reaction, of producing carbon and an intermetallic compound and subjecting the reaction mass to diamond synthesis conditions. In an embodiment of the invention, the diamond containing material produced is polycrystalline diamond (PCD) and the reaction mass contains diamond particles in an amount sufficient to allow PCD to be produced. In a further embodiment of the invention, the diamond content in the diamond containing material produced does not exceed 70 volume %.
摘要翻译：本发明涉及一种制备含有金刚石颗粒的含金刚石材料和含有金属间化合物的第二相的方法，包括以下步骤：提供能够在反应时产生碳和金属间化合物的反应物的反应物质，并使反应物质到钻石合成条件。在本发明的一个实施方案中，所生产的含有金刚石的材料是多晶金刚石（PCD），反应物质含有足以使PCD产生的量的金刚石颗粒。在本发明的另一个实施方案中，所生产的含金刚石材料中的金刚石含量不超过70体积％。

8. 发明申请

US20100050536A1 MATERIAL CONTAINING DIAMOND AND AN INTERMETALLIC COMPOUND 失效
标题翻译：含金刚石和金属间化合物的材料
公开(公告)号：US20100050536A1
公开(公告)日：2010-03-04
申请号：US12515744
申请日：2007-11-21
申请人： Charles Stephan Montross
发明人： Charles Stephan Montross
IPC分类号： C22C26/00 , B01J3/00 , B24D3/00
CPC分类号： B01J3/062 , B01J2203/062 , B01J2203/063 , B01J2203/0635 , B01J2203/0655 , B01J2203/068 , C22C1/0491 , C22C26/00
摘要： THIS INVENTION relates to a method of making a diamond containing material comprising diamond particles and a second phase containing an intermetallic compound comprising the steps of providing a reaction mass of reactants capable, on reaction, of producing carbon and an intermetallic compound and subjecting the reaction mass to diamond synthesis conditions. In an embodiment of the invention, the diamond containing material produced is polycrystalline diamond (PCD) and the reaction mass contains diamond particles in an amount sufficient to allow PCD to be produced. In a further embodiment of the invention, the diamond content in the diamond containing material produced does not exceed 70 volume %.
摘要翻译：本发明涉及一种制备含有金刚石颗粒的含金刚石材料和含有金属间化合物的第二相的方法，包括以下步骤：提供能够在反应时产生碳和金属间化合物的反应物的反应物质，并使反应物质到钻石合成条件。在本发明的一个实施方案中，所生产的含有金刚石的材料是多晶金刚石（PCD），反应物质含有足以使PCD产生的量的金刚石颗粒。在本发明的另一个实施方案中，所生产的含金刚石材料中的金刚石含量不超过70体积％。

9. 发明申请

US20070295267A1 High pressure superabrasive particle synthesis 审中-公开
标题翻译：高压超磨料颗粒合成
公开(公告)号：US20070295267A1
公开(公告)日：2007-12-27
申请号：US11818894
申请日：2007-06-14
申请人： Chien-Min Sung
发明人： Chien-Min Sung
IPC分类号： C30B19/02
CPC分类号： E21B10/5676 , B01J3/062 , B01J2203/061 , B01J2203/062 , B01J2203/0635 , B01J2203/0645 , B01J2203/0655 , B01J2203/066 , B01J2203/068 , B01J2203/0685 , B22F2005/001 , B22F2999/00 , B23D61/18 , B23D65/00 , B23P15/28 , B24D3/08 , B24D7/066 , B24D18/00 , B24D99/005 , B24D2203/00 , C22C1/051 , C22C26/00 , C22C2204/00 , B22F2207/03 , B22F1/0011 , B22F3/004 , B22F2003/1046
摘要： An improved method for controlling nucleation sites during superabrasive particle synthesis can provide high quality industrial superabrasive particles with high yield and a narrow size distribution. The synthesis method can include forming a raw material layer, forming a particulate catalyst layer adjacent the raw material layer, and placing crystalline seeds in a predetermined pattern at least partially in the catalyst layer or raw material layer to form a growth precursor. Alternatively, the raw material and catalyst material can be mixed to form a particulate crystal growth layer and then placing the crystalline seeds in a predetermined pattern in the growth layer. Preferably, seeds can be substantially surrounded by catalyst material. The growth precursor can be maintained at a temperature and pressure at which the superabrasive crystal is thermodynamically stable for a time sufficient for a desired degree of growth. The crystalline seeds can be placed in a predetermined pattern using a template, a transfer sheet, vacuum chuck or similar techniques. The superabrasive particles grown using the described methods typically have a high yield of high quality industrial particles and a narrow distribution of particle sizes.
摘要翻译：在超磨料颗粒合成中控制成核位置的改进方法可以提供高产率和窄尺寸分布的高质量工业超研磨颗粒。合成方法可以包括形成原料层，在原料层附近形成颗粒催化剂层，并将至少部分地将结晶晶种至少部分地放置在催化剂层或原料层中以形成生长前体。或者，可以将原料和催化剂材料混合以形成颗粒状晶体生长层，然后将结晶种子以预定图案放置在生长层中。优选地，种子可以被催化剂材料基本包围。生长前体可以保持在超磨料晶体在热力学稳定的温度和压力下达足以达到所需生长程度的时间。结晶种子可以使用模板，转印片，真空吸盘或类似技术以预定图案放置。使用所述方法生长的超级磨料颗粒通常具有高产率的高质量工业颗粒和窄粒度分布。

10. 发明授权

US07175704B2 Method for reducing defect concentrations in crystals 有权
标题翻译：降低晶体缺陷浓度的方法
公开(公告)号：US07175704B2
公开(公告)日：2007-02-13
申请号：US10455007
申请日：2003-06-05
申请人： Mark Philip D'Evelyn , Thomas Richard Anthony , Stephen Daley Arthur , Lionel Monty Levinson , John William Lucek , Larry Burton Rowland , Suresh Shankarappa Vagarali
发明人： Mark Philip D'Evelyn , Thomas Richard Anthony , Stephen Daley Arthur , Lionel Monty Levinson , John William Lucek , Larry Burton Rowland , Suresh Shankarappa Vagarali
IPC分类号： C30B7/10
CPC分类号： B01J3/065 , B01J3/062 , B01J2203/0635 , B01J2203/0645 , B01J2203/066 , B01J2203/0665 , B01J2203/067 , B01J2203/0675 , B01J2203/069 , C30B33/00 , Y10T117/1004 , Y10T117/1008
摘要： A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal.
摘要翻译：通过提供含有缺陷的晶体和压力介质，开始在高压高温（HP / HT）下除去非金刚石晶体中的缺陷或解除应变的方法。将晶体和压力介质设置在高压电池中并放置在高压设备中，用于在足够高的压力和高温的反应条件下进行处理足够的时间以适应一个或多个去除缺陷或减轻单一应变的应变水晶。

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