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    • 6. 发明申请
    • METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    • 制造半导体器件的方法
    • US20160233176A1
    • 2016-08-11
    • US15009015
    • 2016-01-28
    • Toyota Jidosha Kabushiki Kaisha
    • Kunihito Kato
    • H01L23/00H01L23/12H01L21/48
    • H01L23/562H01L21/4803H01L27/0727H01L29/0834H01L29/7397
    • A method for manufacturing a semiconductor device includes attaching a semiconductor substrate to a support substrate in a heated state, and processing the semiconductor substrate attached to the support substrate. The support substrate has a linear coefficient different from that of the semiconductor substrate. In an overlap region in which the support substrate overlaps the semiconductor substrate attached to the support substrate, a plurality of through-holes penetrating the support substrate from a front surface to a rear surface is provided. A straight line drawn on the front surface of the support substrate in any direction intersects with at least one of the through holes as long as the straight line is drawn through a center of the overlap region.
    • 一种半导体装置的制造方法,其特征在于,在加热状态下,将半导体基板附着在支撑基板上,对所述支撑基板的半导体基板进行加工。 支撑衬底具有与半导体衬底的线性系数不同的线性系数。 在支撑基板与安装在支撑基板上的半导体基板重叠的重叠区域中,设置有从前表面到后表面贯穿支撑基板的多个通孔。 只要直线通过重叠区域的中心,在支撑基板的前表面上以任何方向绘制的直线与至少一个通孔相交。