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    • 2. 发明申请
    • IMAGE FORMING APPARATUS
    • 图像形成装置
    • US20160018781A1
    • 2016-01-21
    • US14869163
    • 2015-09-29
    • SAMSUNG ELECTRONICS CO., LTD.
    • Jeong Yong JUJun Ho LEE
    • G03G21/16
    • G03G21/1647G03G21/1623G03G21/168G03G2221/1654G03G2221/1684
    • An image forming apparatus including a body provided at one side thereof with an opening, a transfer device movably installed at the body so as to be detachable through the opening, and a locking lever rotatably installed at the transfer device, wherein the locking lever rotates between a first position at which one end of the locking lever protrudes from the transfer device and a second position at which the one end is accommodated within the transfer device, and the body includes a locking protrusion that is locked with other end of the locking lever in a state that the locking lever is at the first position, so that only in a state that a worker rotates the locking lever while gripping the transfer device, the transfer device is separated from the body, thereby separating the transfer device in a safe manner.
    • 一种图像形成装置,包括在其一侧设置有开口的主体,可移动地安装在主体上以便通过开口可拆卸的传送装置,以及可转动地安装在传送装置上的锁定杆,其中锁定杆在 锁定杆的一端从传送装置突出的第一位置和一端容纳在传送装置内的第二位置,并且主体包括与锁定杆的另一端锁定的锁定突起 锁定杆处于第一位置的状态,使得只有在操作者在夹持转印装置的同时旋转锁定杆的状态下,转印装置与主体分离,从而以安全的方式分离转印装置。
    • 5. 发明授权
    • Method of forming thin-film transistor liquid crystal display having a
silicon active layer contacting a sidewall of a data line and a storage
capacitor electrode
    • 一种形成薄膜晶体管液晶显示器的方法,所述薄膜晶体管液晶显示器具有与数据线的侧壁接触的硅有源层和辅助电容电极
    • US5920362A
    • 1999-07-06
    • US895464
    • 1997-07-16
    • Joo-hyung Lee
    • Joo-hyung Lee
    • G02F1/136G02F1/1362G02F1/1343
    • G02F1/136213G02F2001/136231
    • Methods of forming thin-film transistor liquid crystal display devices include the steps of forming a semiconductor active layer on a face of a transparent substrate and then forming a gate electrode insulating layer on the semiconductor active layer. The gate electrode insulating layer is then patterned to expose a first portion of the semiconductor active layer. A gate electrode is also formed on the gate electrode insulating layer, opposite the semiconductor active layer. In addition, a pixel electrode is formed to be electrically coupled to the exposed first portion of the semiconductor active layer. Preferably, the steps of forming the gate electrode and pixel electrode are performed simultaneously by forming a transparent conductive layer on the patterned gate electrode insulating layer and then patterning the transparent conductive layer to define a transparent gate electrode and a transparent pixel electrode. The transparent conductive layer may comprise a material selected from the group consisting of indium tin oxide (ITO) and zinc oxide (ZnO). Dopants of first conductivity type are also preferably implanted into the semiconductor active layer, using the gate electrode and the pixel electrode as an implant mask, and then a laser annealing step is performed to recrystallize the channel portion of the active layer and activate the dopants in the source and drain regions.
    • 形成薄膜晶体管液晶显示装置的方法包括在透明基板的表面上形成半导体有源层,然后在半导体有源层上形成栅电极绝缘层的步骤。 然后对栅电极绝缘层进行构图以暴露半导体有源层的第一部分。 栅电极也形成在与半导体有源层相对的栅极绝缘层上。 此外,像素电极形成为电耦合到半导体有源层的暴露的第一部分。 优选地,通过在图案化的栅电极绝缘层上形成透明导电层,然后对透明导电层进行构图以形成透明栅电极和透明像素电极,同时进行形成栅电极和像素电极的步骤。 透明导电层可以包括选自氧化铟锡(ITO)和氧化锌(ZnO)的材料。 第一导电类型的掺杂剂也优选地使用栅电极和像素电极作为注入掩模注入到半导体有源层中,然后执行激光退火步骤以使活性层的沟道部分重结晶并激活掺杂剂 源极和漏极区域。