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    • 5. 发明授权
    • Flat panel with blend round portion structure for use in a cathode ray tube
    • 具有用于阴极射线管的混合圆形部分结构的平板
    • US07309952B2
    • 2007-12-18
    • US10926076
    • 2004-08-26
    • Kyoung Mun ChooSoon Woong LeeJae Seon Kim
    • Kyoung Mun ChooSoon Woong LeeJae Seon Kim
    • H01J29/86H01J29/92
    • H01J29/861H01J2229/8616
    • A flat panel for a cathode ray tube includes a faceplate portion, a skirt portion and a blend round portion joining the faceplate portion with the skirt portion. A point where an external contour of the faceplate portion meets an external blend round contour of the blend round portion is defined as a first point and a point where an external contour of the skirt portion meets the external blend round contour is defined as a second point. The external blend round contour is formed between an imaginary arc whose end points coincide with the first and second points and a line segment whose end points coincide with the first and second points, or is the line segment. The imaginary arc is smoothly connected to the external contours of the faceplate portion and the skirt portion at the first and the second point.
    • 用于阴极射线管的平板包括面板部分,裙部部分和将面板部分与裙部接合的混合圆形部分。 将面板部分的外部轮廓与混合圆形部分的外部混合圆形轮廓相遇的点被定义为第一点和裙部的外部轮廓与外部混合圆形轮廓相遇的点被定义为第二点 。 外部混合圆轮廓形成在其端点与第一和第二点重合的虚拟圆弧和端点与第一和第二点重合的线段,或者是线段。 假想弧在第一点和第二点平滑地连接到面板部分和裙部的外部轮廓。
    • 8. 发明申请
    • SURFACE LIGHT SOURCE DEVICE AND BACKLIGHT UNIT HAVING THE SAME
    • 表面光源装置和具有该光源的背光单元
    • US20070273285A1
    • 2007-11-29
    • US11754447
    • 2007-05-29
    • Jae Seon HONGKeon Yong KimTae Soo LeeHee Soo SongDae Sung KimKeun Yung Kim
    • Jae Seon HONGKeon Yong KimTae Soo LeeHee Soo SongDae Sung KimKeun Yung Kim
    • H01J17/02
    • H01J61/305
    • There is provided a surface light source comprising a plurality of discharge channels, in which each end of the outermost discharge channel is expanded towards a sealing part. At least one of the plurality of discharge channels may include a curved surface part and a flat surface part on a top surface thereof. Both ends of the discharge channel may be formed to be higher than a middle portion thereof, and the discharge channels may be formed to be different in height. Accordingly, the discharge characteristic is improved and bad luminance uniformity is solved by variously changing the shape of the discharge channel forming the discharge space in a surface light source. Furthermore, the present invention solves the problems, such as failure in lighting at low temperature, channeling between adjacent channels, and maintains the quality of molded products.
    • 提供了包括多个排出通道的表面光源,其中最外面的排出通道的每个端部朝向密封部分扩张。 多个排出通道中的至少一个可以包括曲面部分和在其顶表面上的平坦表面部分。 排出通道的两端可以形成为高于其中间部分,并且排出通道的高度可以不同。 因此,通过各种改变形成面光源中的放电空间的放电通道的形状,改善了放电特性并且解决了不良的亮度均匀性。 此外,本发明解决了低温照明故障,相邻通道之间的通道等问题,并且保持了成型品的质量。
    • 10. 发明申请
    • Zn ion implanting method of nitride semiconductor
    • 氮化物半导体的Zn离子注入方法
    • US20070224790A1
    • 2007-09-27
    • US11723581
    • 2007-03-21
    • Chong-Don Kim
    • Chong-Don Kim
    • H01L21/04
    • H01L21/2233H01L21/324H01L33/325
    • A method of implanting a zinc (Zn)-ion into a nitride-based semiconductor substrate, the method includes: providing a homogeneous substrate on which a gallium nitride layer is grown; placing the homogeneous substrate in a crucible in which gallium nitride powders are coated; placing the crucible into a furnace; and performing a heat treatment process, so that a Zn-ion implantation is performed under an ammoniacal atmosphere in the furnace. The method of implanting a Zn-ion into a nitride-based semiconductor substrate, which can minimize a decomposition of a gallium nitride layer during a heat treatment process at a high temperature, easily produce a p-type, and reduce contact resistance between a semiconductor and a metal electrode, is provided.
    • 一种将锌(Zn)注入到氮化物基半导体衬底中的方法,该方法包括:提供在其上生长氮化镓层的均匀衬底; 将均匀的衬底放置在其中涂覆有氮化镓粉末的坩埚中; 将坩埚放入炉中; 并进行热处理工序,使得在炉内的氨气氛下进行Zn离子注入。 将Zn离子注入到氮化物基半导体衬底中的方法,其可以在高温下的热处理工艺期间最小化氮化镓层的分解,容易产生p型,并降低半导体 和金属电极。