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1. 发明授权

US6129901A Controlled synthesis and metal-filling of aligned carbon nanotubes 失效
标题翻译：对准碳纳米管的控制合成和金属填充
公开(公告)号：US6129901A
公开(公告)日：2000-10-10
申请号：US186092
申请日：1998-11-05
申请人： Martin Moskovits , Jing Li , Thomas L. Haslett
发明人： Martin Moskovits , Jing Li , Thomas L. Haslett
IPC分类号： C01B31/02 , D01F9/127
CPC分类号： B82Y30/00 , B82Y10/00 , B82Y40/00 , C01B31/0233 , C01B31/0286 , H01L23/373 , C01B2202/08 , C01B2202/34 , C01B2202/36 , H01J2201/30469 , H01L2924/0002 , Y10S977/842 , Y10S977/843
摘要： The present invention provides a powerful new method for producing, uniform sized and uniformly aligned nanotubes through catalytic pyrolysis of a hydrocarbon within the dense, uniform and parallel pores of alumina nano-templates. The catalyst, Co, Fe, Ni or another suitable substance is deposited electrochemically into the bottom of the channel of the alumina template. The nanotubes with any desired diameter in the range 5-500 nm and lengths up to .about.100 .mu.m, are generated by the pyrolysis of a suitable hydrocarbon inside the pores of the alumina template with at least one end open at the alumina/air interface. The nanotubes may be filled by metals using for example electroless deposition.
摘要翻译：本发明提供了一种强大的新方法，用于通过氧化铝纳米模板的致密，均匀和平行的孔中的烃的催化热解来生产均匀尺寸和均匀排列的纳米管。将催化剂Co，Fe，Ni或其他合适的物质电化学沉积到氧化铝模板的通道的底部。通过在氧化铝/空气界面的至少一端开放的氧化铝模板的孔隙内热解合适的烃来产生具有5-500nm范围内的任何所需直径和长达DIFFERENCE100μm的纳米管。可以使用例如无电沉积的金属填充纳米管。

2. 发明授权

US5824368A Process of diamond growth from C.sub.70 失效
标题翻译： C70钻石生长过程
公开(公告)号：US5824368A
公开(公告)日：1998-10-20
申请号：US828148
申请日：1997-03-24
申请人： Martin Moskovits , Kejian Fu
发明人： Martin Moskovits , Kejian Fu
IPC分类号： C30B29/04 , C23C16/27 , C30B23/00 , C30B25/00 , C23C16/26 , C01B31/06
CPC分类号： C30B23/00 , C23C16/27 , C30B25/00 , C30B29/04
摘要： A method of growing single crystal diamonds in excess of 10 .mu.m in diameter from industrial diamond "seeds" having mean diameters of approximately 1.5 .mu.m is disclosed. The diamonds are grown by exposing the seed diamonds to C.sub.70 in the presence of elemental reducing agents such as phosphorus or selenium in evacuated cells at moderate temperatures and pressures. In another aspect the invention diamonds are grown by exposing diamond seed particles to vapour phase C.sub.70 in the presence of a gas phase metal carbonyl, such as F.sub.5 e(CO) in a temperature range of 400.degree. C. to 700.degree. C. to cause at least some of the diamond seed particles to grow.
摘要翻译：公开了从具有平均直径约1.5μm的工业金刚石“种子”生长直径超过10微米的单晶钻石的方法。在中等温度和压力下，在真空细胞中的元素还原剂如磷或硒的存在下，将种子金刚石暴露于C70来生长钻石。在另一方面，本发明的金刚石通过在气相金属羰基如F5e（CO）的存在下在400℃至700℃的温度范围内将金刚石种子颗粒暴露于气相C70而生长，最少的一些金刚石颗粒生长。

3. 发明授权

US5581091A Nanoelectric devices 失效
标题翻译：纳米器件
公开(公告)号：US5581091A
公开(公告)日：1996-12-03
申请号：US352151
申请日：1994-12-01
申请人： Martin Moskovits , Jing M. Xu
发明人： Martin Moskovits , Jing M. Xu
IPC分类号： H01L45/00 , H01L29/06 , H01L21/302
CPC分类号： H01L49/006 , B82Y10/00 , B82Y30/00 , Y10S438/962 , Y10S977/937 , Y10T29/413
摘要： Single-electron devices useful as diodes, transistors or other electronic components are prepared by anodizing a metal substrate in sheet or foil form electrolytically in an acid bath, to deposit thereon an oxide film having axially disposed micropores of substantially uniform diameter in the range of from about 1 to about 500 nanometers and substantially uniform depth less than the thickness of the oxide film, leaving an ultra thin oxide layer between the bottom of each pore in the metal substrate. The conductive material is deposited in the pores to form nanowires contacting the oxide layer at the bottom of the pores. Macro metal is deposited over the ends of the nanowires for external electrical contact purposes. Devices can be made according to the present invention which are suitable to exhibit single-electron tunnelling effects and arrays of tunnel junction devices can be prepared having a density up to the order of 10.sup.10 per square cm.
摘要翻译：用作二极管，晶体管或其他电子部件的单电子器件通过在酸浴中电解将片状或箔片形式的金属衬底阳极化，在其上沉积具有基本上均匀直径的轴向设置的微孔的氧化膜，其范围为约1至约500纳米，并且深度小于氧化物膜的厚度，在金属基底中的每个孔的底部之间留下超薄氧化物层。导电材料沉积在孔中以形成接触孔底部的氧化物层的纳米线。宏金属沉积在纳米线的末端以用于外部电接触目的。可以根据适合于显示单电子隧道效应的本发明制造器件，并且可以制备密度高达每平方厘米1010的隧道结器件阵列。

4. 发明授权

US5614258A Process of diamond growth from C.sub.70 失效
标题翻译： C70钻石生长过程
公开(公告)号：US5614258A
公开(公告)日：1997-03-25
申请号：US391705
申请日：1995-02-21
申请人： Martin Moskovits , Kejian Fu , Xijia Gu
发明人： Martin Moskovits , Kejian Fu , Xijia Gu
IPC分类号： C23C16/27 , C30B23/00 , C30B25/00 , C30B29/04 , B01J3/06
CPC分类号： C30B23/00 , C23C16/27 , C30B25/00 , C30B29/04
摘要： A method of growing diamond crystals in excess of 10 .mu.m in diameter from industrial diamond "seeds" having mean diameters of approximately 1.5 .mu.m is disclosed. The diamonds are grown by exposing the seed diamonds to C.sub.70 in the presence of reducing agents such as phosphorus or selenium in evacuated cells at moderate temperatures and pressures.
摘要翻译：公开了从具有平均直径约1.5μm的工业金刚石“种子”生长直径超过10μm的金刚石晶体的方法。在中等温度和压力下，在真空的细胞中，在还原剂如磷或硒的存在下，将种子金刚石暴露于C70来生长钻石。

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