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    • 6. 发明申请
    • Demodulation Sensor with Separate Pixel and Storage Arrays
    • 具有独立像素和存储阵列的解调传感器
    • US20110164132A1
    • 2011-07-07
    • US12985737
    • 2011-01-06
    • Bernhard BuettgenThierry Oggier
    • Bernhard BuettgenThierry Oggier
    • H04N7/18H01L27/146
    • G01S17/89G01S7/4914G01S7/4918G01S17/36
    • A demodulation image sensor, such as used in time of flight (TOF) cameras, extracts all storage- and post-processing-related steps from the pixels to another array of storage and processing elements (proxels) on the chip. The pixel array has the task of photo-detection, first processing and intermediate storage, while the array of storage and processing elements provides further processing and enhanced storage capabilities for each pixel individually. The architecture can be used to address problems due to the down-scaling of the pixel size. Typically, either the photo-sensitivity or the signal storage capacitance suffers significantly. Both a lower sensitivity and smaller storage capacitances have negative influence on the image quality. The disclosed architecture allows for keeping the storage capacitance unaffected by the pixel down-scaling. In addition to that, it provides a high degree of flexibility in integrating more intelligence into the image sensor design already on the level of the pixel array. In particular, if applied to demodulation pixels, the flexibility of the architecture allows for integrating on sensor-level concepts for multi-tap sampling, mismatch compensation, background suppression and so on, without any requirement to adjust the particular demodulation pixel architecture.
    • 诸如在飞行时间(TOF)摄像机中使用的解调图像传感器从芯片上的像素到存储和处理元件(代码)的另一阵列提取所有存储和后处理相关的步骤。 像素阵列具有光检测,第一处理和中间存储的任务,而存储和处理元件阵列分别为每个像素提供进一步的处理和增强的存储能力。 该架构可以用于解决由于像素尺寸的缩小而导致的问题。 通常,光敏性或信号存储电容受到很大影响。 较低的灵敏度和较小的存储电容对图像质量都有负面影响。 所公开的架构允许保持存储电容不受像素缩小的影响。 除此之外,它在将更多智能集成到已经在像素阵列级别上的图像传感器设计中提供了高度的灵活性。 特别地,如果应用于解调像素,则架构的灵活性允许集成在用于多抽头采样,失配补偿,背景抑制等的传感器级概念上,而不需要调整特定的解调像素架构。
    • 7. 发明授权
    • Large-area pixel for use in an image sensor
    • 用于图像传感器的大面积像素
    • US07923673B2
    • 2011-04-12
    • US11659314
    • 2005-07-18
    • Bernhard BüttgenFelix LustenbergerPeter Seitz
    • Bernhard BüttgenFelix LustenbergerPeter Seitz
    • H01L27/00
    • H01L27/14812H01L27/14603
    • A pixel for detecting incident radiation (In) over a large area with high sensitivity and low power consumption. The pixel comprises a semiconductor substrate (1), covered by a thin insulating layer (2), on top of which a dendritic or arborescent gate structure (3) is arranged. The dendritic gate (3) is electrically connected at two or more contacts (C1, C2) with voltage sources, leading to the flow of a current and a position-dependent potential distribution in the gate (3). Due to the use of arborescent structures and various materials (31, 32), the pixel can be optimized for a certain application, in particular in terms of the electric field distribution, the RC time constant, the power consumption and the spectral sensitivity. Due to its compact size, the photo sensor can be arranged in linear or two-dimensional manner for the realization of line and area sensors.
    • 用于在高灵敏度和低功耗的大面积上检测入射辐射(In)的像素。 像素包括被薄绝缘层(2)覆盖的半导体衬底(1),其上布置有树枝状或碳化的栅极结构(3)。 树枝状栅极(3)在两个或更多个触点(C1,C2)处与电压源电连接,导致栅极(3)中的电流和位置相关电位分布的流动。 由于使用散射结构和各种材料(31,32),像素可以针对特定应用进行优化,特别是在电场分布,RC时间常数,功耗和光谱灵敏度方面。 由于其紧凑的尺寸,光传感器可以以线性或二维方式布置以实现线和面传感器。
    • 8. 发明授权
    • Solid-state photodetector pixel and photodetecting method
    • 固态光电探测器像素和光电检测方法
    • US07897928B2
    • 2011-03-01
    • US11658516
    • 2005-07-25
    • Rolf KaufmannThierry OggierSimon NeukomMichael Lehmann
    • Rolf KaufmannThierry OggierSimon NeukomMichael Lehmann
    • G01T1/24H01L27/148
    • H01L31/0232H01L27/14601H01L27/14623H01L27/148H01L31/02005
    • A pixel is formed in a semiconductor substrate (S) with a plane surface for use in a photodetector. It comprises an active region for converting incident light (In) into charge carriers, photogates (PGL, PGM, PGR) for generating a lateral electric potential (Φ(x)) across the active region, and an integration gate (IG) for storing charge carriers generated in the active region and a dump site (Ddiff). The pixel further comprises separation-enhancing means (SL) for additionally enhancing charge separation in the active region and charge transport from the active region to the integration gate (IG). The separation-enhancing means (SL) are for instance a shield layer designed such that for a given lateral electric potential (Φ(x)), the incident light (In) does not impinge on the section from which the charge carriers would not be transported to the integration gate (IG).
    • 在具有用于光电检测器的平面的半导体基板(S)中形成像素。 它包括用于将入射光(In)转换成电荷载体的有源区域,用于在有源区域上产生横向电位(Φ(x))的照相门(PGL,PGM,PGR)和用于存储的积分栅极 在活动区域​​中生成的电荷载体和转储位点(Ddiff)。 像素还包括分离增强装置(SL),用于另外增强有源区域中的电荷分离和从有源区域到积分栅极(IG)的电荷传输。 分离增强装置(SL)例如是设计成使得对于给定的横向电位(Φ(x)),入射光(In)不会撞击到电荷载体不会在其上的部分的屏蔽层 运送到集成门(IG)。