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1. 发明授权

US6107127A Method of making shallow well MOSFET structure 有权
标题翻译：浅井MOSFET结构的制作方法
公开(公告)号：US6107127A
公开(公告)日：2000-08-22
申请号：US145513
申请日：1998-09-02
申请人： Christopher B. Kocon
发明人： Christopher B. Kocon
IPC分类号： H01L29/78 , H01L21/336 , H01L29/08 , H01L21/8238
CPC分类号： H01L29/66712 , H01L29/7802 , H01L29/0847
摘要： To form a shallow well MOSFET, an epitaxial layer is subjected to a blanket implant of impurities, so as to form a very shallow well region that defines a PN junction with the epitaxial layer. A field oxide layer is selectively formed on a portion of the shallow well region, and a gate insulator layer is formed on the exposed portion of the shallow well region contiguous with the field insulator layer. A polycrystalline silicon spacer-gate layer is non-selectively deposited on the field insulator layer and the gate insulator layer, forming a multiple thickness implant mask. The resulting structure is subjected to one or more high energy impurity implants, to overdose and thereby convert a portion of the shallow well region to the conductivity of the epitaxial layer. This extends the PN junction up to the surface of the well region beneath the gate insulator layer, thereby defining the length of the channel between the side edge of the field oxide layer and the extended PN junction. A polysilicon planarization layer is then non-selectively formed on the spacer layer, followed by a planarization etch, to define the thickness of the gate layer. The field insulator layer is then stripped, and source and drain regions are formed. What results is a shallow well insulated gate field effect semiconductor device having decreased resistance and current pinching in the channel neck region, relative to that of a conventional process, thereby providing increased power handling capability and efficiency.
摘要翻译：为了形成浅阱MOSFET，对外延层进行杂质的覆盖注入，以形成限定与外延层的PN结的非常浅的阱区。在浅阱区域的一部分选择性地形成场氧化物层，并且在与场绝缘体层相邻的浅阱区域的露出部分上形成栅极绝缘体层。多晶硅间隔栅极层被非选择性地沉积在场绝缘体层和栅极绝缘体层上，形成多个厚度的注入掩模。所得到的结构经受一个或多个高能杂质植入物，以过量，从而将浅井区的一部分转化为外延层的导电性。这将PN结延伸到栅极绝缘体层下面的阱区的表面，从而限定了场氧化物层的侧边缘和延伸的PN结之间的沟道的长度。然后在间隔层上非选择性地形成多晶硅平坦化层，随后进行平坦化蚀刻，以限定栅极层的厚度。然后剥离场绝缘体层，形成源区和漏区。相对于常规工艺，通道颈部区域具有降低的电阻和电流夹紧的浅阱绝缘栅场效应半导体器件的结果是什么，从而提供更高的功率处理能力和效率。

2. 发明授权

US6080614A Method of making a MOS-gated semiconductor device with a single diffusion 失效
标题翻译：制造具有单一扩散的MOS门控半导体器件的方法
公开(公告)号：US6080614A
公开(公告)日：2000-06-27
申请号：US885877
申请日：1997-06-30
申请人： John Manning Sauidge Neilson , Linda Susan Brush , Frank Stensney , John Lawrence Benjamin , Anup Bhalla , Christopher Lawrence Rexer , Richard Douglas Stokes , Christopher Boguslow Kocon , Louise E. Skurkey , Christopher Michael Scarba
发明人： John Manning Sauidge Neilson , Linda Susan Brush , Frank Stensney , John Lawrence Benjamin , Anup Bhalla , Christopher Lawrence Rexer , Richard Douglas Stokes , Christopher Boguslow Kocon , Louise E. Skurkey , Christopher Michael Scarba
IPC分类号： H01L21/336 , H01L29/10 , H01L29/78 , H01L21/425 , H01L21/22 , H01L21/38
CPC分类号： H01L29/66712 , H01L29/1095 , H01L29/7802 , Y10S148/126
摘要： A method of fabricating a MOS-gated semiconductor device in which arsenic dopant is implanted through a mask to form a first layer, boron dopant is implanted through the mask to form a second layer deeper than the first layer, and in which a single diffusion step diffuses the implanted arsenic and the implanted boron at the same time to form a P+ body region with an N+ source region therein and a P type channel region.
摘要翻译：一种制造MOS栅控半导体器件的方法，其中通过掩模注入砷掺杂剂以形成第一层，通过掩模注入硼掺杂剂以形成比第一层更深的第二层，并且其中单个扩散步骤同时扩散注入的砷和注入的硼，以形成其中具有N +源极区的P +体区和P型沟道区。

3. 发明授权

US5929508A Defect gettering by induced stress 失效
标题翻译：缺陷诱导应激诱导
公开(公告)号：US5929508A
公开(公告)日：1999-07-27
申请号：US82892
申请日：1998-05-21
申请人： Jose A. Delgado , Craig J. McLachlan
发明人： Jose A. Delgado , Craig J. McLachlan
IPC分类号： H01L21/322 , H01L29/30
CPC分类号： H01L21/3221
摘要： The present invention induces provides a gettering trench on the front surface of a device substrate. In one embodiment it induces stress and simultaneously forms a gettering zone 40 for gettering impurities in an integrated circuit structure. In another embodiment, the trench is filled with gettering material 72 such as polysilicon. The two gettering mechanisms may be combined 82,84. The invention is useful for providing gettering in bonded wafers and in silicon-on-insulator devices (FIGS. 4,5).
摘要翻译：本发明引起在器件衬底的前表面上提供吸气沟槽。在一个实施例中，其引起应力并同时形成用于吸收集成电路结构中的杂质的吸杂区40。在另一个实施例中，沟槽填充有吸气材料72，例如多晶硅。两种吸气机制可以组合82,84。本发明可用于在接合晶片和绝缘体上硅器件中提供吸气（图4,5）。

4. 发明授权

US5633815A Formatter 失效
标题翻译：格式化
公开(公告)号：US5633815A
公开(公告)日：1997-05-27
申请号：US478683
申请日：1995-06-07
申请人： William R. Young
发明人： William R. Young
IPC分类号： H03D7/16 , H03H17/06 , H04B1/26 , H04B1/30 , H04J1/05 , H04Q11/04 , G06F7/38 , G06F5/00
CPC分类号： H04B1/0021 , H03D7/165 , H03H17/06 , H04B1/0003 , H04B1/26 , H04B1/30 , H04J1/05 , H04Q11/04
摘要： A digital down converter with a programmable mixing down frequency and a programmable extraction bandwidth uses a Read Only Memory, ROM, based sin/cos generator plus a programmable high decimation filter followed by a gain compensating scaling multiplier and a Finite Impulse Response, FIR, filter. Output format options are also programmable, and programming commands are serially loaded into registers. Various components may be isolated for efficient testing and also subsystem operation.
摘要翻译：具有可编程混合低频和可编程提取带宽的数字下变频器使用基于只读存储器，基于ROM的sin / cos发生器加上可编程高抽取滤波器，随后是增益补偿缩放乘法器和有限脉冲响应FIR滤波器。输出格式选项也是可编程的，并且编程命令被串行加载到寄存器中。可以隔离各种组件用于有效测试和子系统操作。

5. 发明授权

US5613051A Remote image exploitation display system and method 失效
标题翻译：远程图像挖掘显示系统和方法
公开(公告)号：US5613051A
公开(公告)日：1997-03-18
申请号：US360262
申请日：1994-12-21
申请人： David M. Iodice , David M. Bell
发明人： David M. Iodice , David M. Bell
IPC分类号： G06F3/14 , G06F13/14
CPC分类号： G06F3/14
摘要： A system and method for storing image data in a location remote from a display device which uses the data. The system uses plural reduced resolution image data sets and geographical coordination between the image being viewed and the data sets to substantially reduce the bandwidth required to transmit the image data and to shorten the time needed for transmission. Automatic transmission of data needed may be utilized.
摘要翻译：一种用于将图像数据存储在远离使用该数据的显示装置的位置的系统和方法。该系统使用多个降低分辨率的图像数据集和正在观看的图像与数据集之间的地理协调，以显着地减少发送图像数据所需的带宽并缩短传输所需的时间。可以自动传输所需的数据。

6. 发明授权

US4841560A Direct access test unit for central office 失效
标题翻译：中央办公室直接访问测试单元
公开(公告)号：US4841560A
公开(公告)日：1989-06-20
申请号：US109164
申请日：1987-10-16
申请人： Aaron Chan , Ben Pierce , Leslie Shafto
发明人： Aaron Chan , Ben Pierce , Leslie Shafto
IPC分类号： H04M3/30 , H04M3/487
CPC分类号： H04M3/30 , H04M3/487
摘要： A direct access test unit for enabling a craftsperson at a telephone facility remote with respect to a central office to test subscriber lines comprises a first access port coupled to an access line circuit, by way of which the remote telephone facility communicates with the telephone office in the course of testing subscriber lines, and a second access port coupled to a test trunk circuit by way of which a subscriber line is to be tested by the test unit. Coupled between the first and second access ports is a processor-controlled subscriber line test/interface arrangement which is responsive to (tone) dial signals, generated by the remote telephone facility, and representative of a command to conduct a test of a selected one of a plurality of subscriber line circuits that are accessible by the test unit from the second access port, including the line circuit to which said remote telephone facility is connected, for accessing the subscriber line circuit via the second access port and conducting tests of the subscriber line circuit by way of the test trunk circuit. Stored within the memory of the processor which controls the operation of the test unit are voice message menus, each in a respectively different language (e.g. English, Spanish) the contents of which are controllably accessed and synthesized for transmission to the craftsperson via the first access port. The voice messages include instructions for guiding the craftsperson in the course of carrying out a test of a selected subscriber line.
摘要翻译：直接访问测试单元，用于使远程相对于中心局的电话设备的技工能够测试用户线路包括耦合到接入线路电路的第一接入端口，远程电话设备通过该接入线路与电话局进行通信测试用户线路的过程，以及耦合到测试中继电路的第二接入端口，通过该测试中继电路将由测试单元测试用户线路。耦合在第一和第二接入端口之间的是处理器控制的用户线测试/接口布置，其响应于由远程电话设备产生的（音调）拨号信号，并且代表对所选择的一个接入端口进行测试的命令多个用户线电路，可由测试单元从第二接入端口接入，包括所述远程电话设备所连接的线路电路，用于经由第二接入端口接入用户线电路，并进行用户线的测试通过测试中继电路的电路。存储在控制测试单元的操作的处理器的存储器内的是语音消息菜单，每个语言消息菜单分别以不同的语言（例如英语，西班牙语）进行，其内容被可控地访问和合成，以便经由第一访问传送给技工港口。语音消息包括在对所选择的用户线进行测试的过程中引导技工的指令。

7. 发明授权

US4812854A Mesh-configured rf antenna formed of knit graphite fibers 失效
标题翻译：由针织石墨纤维形成的网状配置射频天线
公开(公告)号：US4812854A
公开(公告)日：1989-03-14
申请号：US046144
申请日：1987-05-05
申请人： Bobby J. Boan , Martin Schwam
发明人： Bobby J. Boan , Martin Schwam
IPC分类号： H01Q1/36 , H01Q15/16
CPC分类号： H01Q15/16 , H01Q1/368
摘要： An antenna reflector material for electromagnetic waves is comprised of knitted strands of fine diameter graphite filaments, which have been individually coated with a stress absorbing layer (e.g. a thin metallic or dielectric cladding). Because of the stress absorbing coating, the graphite fibers, which, by themselves, are inherently brittle and unable to tolerate substantial changes to their bend radius profiles, are able to be successfully knitted into a tricot mesh configuration and thereby yield an antenna surface material that possesses a near-zero coefficient of thermal expansion and a sufficiently low in-plane mechanical stiffness. After the tricot knit graphite mesh material has been formed, the cladding layer may be removed (e.g. by heat or chemically dissolved), without affecting the mechanical properties of the graphite strands of the tricot knit. The intended displacement capability of the loops of graphite strands within the knit mesh structure are retained, so that thermal inputs do not alter the performance characteristics of the graphite mesh antenna.
摘要翻译：用于电磁波的天线反射器材料由单独涂覆有应力吸收层（例如薄金属或电介质包层）的细直径石墨细丝的针织线组成。由于应力吸收涂层，石墨纤维本身就是脆性的并且不能耐受它们的弯曲半径分布的实质性变化，所以能够被成功编织成经编网状结构，从而产生天线表面材料，具有接近零的热膨胀系数和足够低的平面内机械刚度。在已经形成经编针织石墨网状材料之后，可以将包覆层除去（例如通过加热或化学溶解），而不会影响经编针织物的石墨丝束的机械性能。保持针织网状结构内的石墨线圈的预期位移能力，使得热输入不改变石墨网状天线的性能特征。

8. 发明授权

US4804970A Equiphase refractive antenna lens 失效
$Equiphase refractive antenna lens$
标题翻译：等折射天线镜
公开(公告)号：US4804970A
公开(公告)日：1989-02-14
申请号：US730997
申请日：1985-05-06
申请人： John R. Todd
发明人： John R. Todd
IPC分类号： H01Q15/08 , H01Q19/06
CPC分类号： H01Q15/08
摘要： A dielectric antenna lens for planar wavefront/focal point conversion is configured of a series of concentric rings, each of which is contoured from a rear face to inclined termination edges that are delimited by the functional performance of the lens and which assist in the manufacture of the lens. In addition, the bottom edge of each ring, rather than terminate at a cylindrical side wall of an adjacent ring, terminates at a flattened region between itself and the adjacent ring. This flattened region effectively eliminates the acute angle wedge between rings and, together with the inclined termination edges of the rings, serves to enable the lens to be easily manufactured, as by injection molding, with the flattened land portions and inclined termination edges making possible removal of the lens from the injection mold.As a further aspect of the present invention there is provided a multiple wavelength conversion arrangement employing the dielectric lens in combination with a wavelength selective (e.g. dichroic) filter, enabling the lens to be used as part of a compact microwave transceiver unit operating at a plurality of different frequencies.
摘要翻译：用于平面波前/焦点转换的电介质天线透镜由一系列同心环构成，每个同心环从后表面到由透镜的功能性能界定的倾斜终端边缘轮廓，并且有助于制造镜头。另外，每个环的底部边缘，而不是终止于相邻环的圆柱形侧壁，终止于其本身与相邻环之间的平坦区域。该扁平化区域有效地消除了环之间的锐角楔形，并且与环的倾斜端接边缘一起用于使透镜容易地通过注射成型制造，其中平坦的接合部分和倾斜的端接边缘使得可能的移除的镜头从注射模具。作为本发明的另一方面，提供了一种使用该介质透镜与波长选择性（例如二向色）滤光器组合的多波长转换装置，使得该透镜可用作在多个操作的紧凑型微波收发器单元的一部分的不同频率。

9. 发明授权

US3901182A Silicon source feed process 失效
标题翻译：硅源进料工艺
公开(公告)号：US3901182A
公开(公告)日：1975-08-26
申请号：US25474872
申请日：1972-05-18
申请人： HARRIS CORP
发明人： CHIANG PING-WANG
IPC分类号： C23C16/24 , C23C16/448 , C30B25/02 , C23C13/08
CPC分类号： C23C16/4487 , C23C16/24 , C23C16/4482 , C30B25/02 , C30B29/06 , Y10S118/90 , Y10T137/6579
摘要： A process is disclosed for chemical vapor deposition (CVD) of silicon onto a substrate. In the process hydrogen gas is bubbled through a suitable liquid source of silicon, such as SiCl4 or SiHCl3, to evaporate liquid therefrom and to carry the vapor in a gas stream. A constant temperature reflex condenser is used to control the concentration of the gas stream. The said bubbler is maintained at room temperature and the said condenser is maintained at a temperature which is the lowest in the entire CVD system, and below the lowest possible temperature of the liquid source attributable to heat loss through vaporization. The effluent gas stream of the condenser is at a substantially constant temperature, and the concentration of vapor in the gas stream is thus held substantially constant through the deposition process of the silicon onto the substrate.
摘要翻译：公开了一种用于硅衬底上的化学气相沉积（CVD）的方法。在此过程中，氢气通过合适的硅液体源（如SiCl4或SiHCl3）鼓泡，从而蒸发出液体，并将气体携带在气流中。使用恒温反射冷凝器来控制气流的浓度。所述起泡器保持在室温，并且所述冷凝器保持在整个CVD系统中最低的温度，并且低于归因于通过蒸发的热损失的液体源的最低可能温度。冷凝器的废气流处于基本上恒定的温度，因此气流中的蒸气浓度通过硅沉积到衬底上而保持基本恒定。

10. 发明授权

US5627526A Proximity detection using DPSK waveform 失效
标题翻译：使用DPSK波形的接近检测
公开(公告)号：US5627526A
公开(公告)日：1997-05-06
申请号：US315348
申请日：1994-09-30
申请人： Donald K. Belcher , Albert D. Darby, Jr. , Lamar G. McBryde
发明人： Donald K. Belcher , Albert D. Darby, Jr. , Lamar G. McBryde
IPC分类号： G06K7/00 , G08B21/02 , G08C21/00
CPC分类号： G06K7/0008 , G08B21/02
摘要： A method and system for determining whether a transmitting unit is proximate a receiving unit wherein the transmitting unit includes a magnetic field generator for a providing a plurality of time-sequential magnetic fields, each of the sequences being a differential phase shift key (DPSK) modulated code. The magnetic field is transmitted at a relatively interference free frequency of 72 KHz and the DPSK modulation frequency is about 1200 bits per second. Each pair of transmitting and receiving unit uses with a distinguishing code selected from a predetermined group of generally orthogonal codes.
摘要翻译：一种用于确定发射单元是否靠近接收单元的方法和系统，其中所述发射单元包括用于提供多个时间顺序磁场的磁场发生器，所述序列中的每一个是差分相移键（DPSK）调制码。磁场以72KHz的相对无干扰频率发送，DPSK调制频率约为1200位/秒。每对发送和接收单元使用从预定的一般正交码组中选出的区别码。

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