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1. 发明公开

US20230392573A1 Tidal stream generation apparatus with pump 审中-公开
公开(公告)号：US20230392573A1
公开(公告)日：2023-12-07
申请号：US18234903
申请日：2023-08-17
申请人： Feng-Yan Shen
发明人： Feng-Yan Shen
IPC分类号： F03B13/26 , F03B11/00
CPC分类号： F03B13/264 , F03B11/00 , F05B2260/4031
摘要： A generating apparatus for generating electrical power from a water flow to electrical energy includes a pump; pipes; tidal stream generation devices; and drains. The pump is connected to and in fluid communication with the pipes. The pump may pump seawater to the pipes and sweater may further flow to the tidal stream generation devices so that the tidal stream generation devices may generate electrical power from a seawater flow to electrical energy. The tidal stream generation device includes a turbine driven by seawater, a shaft co-rotated with the turbine, a reduction gearbox operatively connected to the shaft, an output shaft extending out of the reduction gearbox, and an alternator driven by the output shaft to convert mechanical energy to electrical energy in the form of AC, and an electrical grid electrically connected to the alternator. The drain is connected to the pipe for flowing seawater to the sea.

2. 发明申请

US20110215227A1 Photosensitive Detector with Composite Dielectric Gate MOSFET Structure and Its Signal Readout Method 有权
标题翻译：具有复合介电栅极MOSFET结构的光敏检测器及其信号读出方法
公开(公告)号：US20110215227A1
公开(公告)日：2011-09-08
申请号：US13126079
申请日：2010-02-10
申请人： Feng Yan , Rong Zhang , Yi Shi , Lin Pu , Yue Xu , Fuwei Wu , Xiaofeng Bo , Haoguang Xia
发明人： Feng Yan , Rong Zhang , Yi Shi , Lin Pu , Yue Xu , Fuwei Wu , Xiaofeng Bo , Haoguang Xia
IPC分类号： H01L31/112 , H03F3/08
CPC分类号： H01L27/14643 , H01L27/14614 , H01L31/1136
摘要： The present invention relates to a photosensitive detector with a composite dielectric gate MOSFET structure and its signal readout method. The MOSFET structure detector is formed on a p-type semiconductor substrate. N-type semiconductor regions locate on the two sides of the top part of the p-type semiconductor substrate to form a source and a drain. An underlying dielectric layer, a photo-electron storage layer, a top dielectric layer, and a control gate are stacked on the substrate in sequence. The top insulating dielectric layer can prevent the photoelectrons stored in the photo-electron storage layer from leaking into the control gate. The source and the drain are floating when photoelectrons are collected and injected into the photoelectron storing layer to be held therein. There is a transparent or semi-transparent window for detecting incident light forming on the substrate or gate surface. This invented detector has excellent scalability, basic compatibility with the flash memory fabricating technology, low leakage current, higher imaging speed than CCD, non-sensitivity to processing defects, larger dynamic range than other structures and higher accuracy of signal readout.
摘要翻译：本发明涉及一种具有复合介电栅极MOSFET结构的光敏检测器及其信号读出方法。 MOSFET结构检测器形成在p型半导体衬底上。 N型半导体区域位于p型半导体衬底的顶部的两侧，以形成源极和漏极。依次将基底电介质层，光电子存储层，顶部电介质层和控制栅极堆叠在基板上。顶部绝缘介电层可以防止存储在光电子存储层中的光电子泄漏到控制栅极中。当光电子被收集并注入到要保持在其中的光电子储存层时，源极和漏极是浮置的。存在用于检测基板或栅极表面上的入射光形成的透明或半透明窗口。本发明的检测器具有优异的可扩展性，与闪存制造技术的基本兼容性，低漏电流，比CCD更高的成像速度，对处理缺陷的灵敏度，对其他结构的动态范围更大，信号读出精度更高。

3. 外观设计

USD1003465S1 LED light 有权
公开(公告)号：USD1003465S1
公开(公告)日：2023-10-31
申请号：US29890665
申请日：2023-04-26
申请人： Feng Yan
设计人： Feng Yan
摘要： FIG. 1 is a perspective view of a LED light, showing my new design;
FIG. 2 is a another perspective view thereof;
FIG. 3 is a front elevational view thereof;
FIG. 4 is a rear elevational view thereof;
FIG. 5 is a left side elevational view thereof;
FIG. 6 is a right side elevational view thereof;
FIG. 7 is a top plan view thereof;
FIG. 8 is a bottom plan view thereof; and,
FIG. 9 is a perspective view of the LED light where the LED light is in a configuration of use.
The broken lines in the drawings depict portions of the LED light that form no part of the claimed design.

4. 发明授权

US08604409B2 Photosensitive detector with composite dielectric gate MOSFET structure and its signal readout method 有权
标题翻译：具有复合介质栅MOSFET结构的感光探测器及其信号读出方法
公开(公告)号：US08604409B2
公开(公告)日：2013-12-10
申请号：US13126079
申请日：2010-02-10
申请人： Feng Yan , Rong Zhang , Yi Shi , Lin Pu , Yue Xu , Fuwei Wu , Xiaofeng Bo , Haoguang Xia
发明人： Feng Yan , Rong Zhang , Yi Shi , Lin Pu , Yue Xu , Fuwei Wu , Xiaofeng Bo , Haoguang Xia
IPC分类号： H01L31/00
CPC分类号： H01L27/14643 , H01L27/14614 , H01L31/1136
摘要： The present invention relates to a photosensitive detector with a composite dielectric gate MOSFET structure and its signal readout method. The MOSFET structure detector is formed on a p-type semiconductor substrate. N-type semiconductor regions locate on the two sides of the top part of the p-type semiconductor substrate to form a source and a drain. An underlying dielectric layer, a photo-electron storage layer, a top dielectric layer, and a control gate are stacked on the substrate in sequence. The top insulating dielectric layer can prevent the photoelectrons stored in the photo-electron storage layer from leaking into the control gate. The source and the drain are floating when photoelectrons are collected and injected into the photoelectron storing layer to be held therein. There is a transparent or semi-transparent window for detecting incident light forming on the substrate or gate surface. This invented detector has excellent scalability, basic compatibility with the flash memory fabricating technology, low leakage current, higher imaging speed than CCD, non-sensitivity to processing defects, larger dynamic range than other structures and higher accuracy of signal readout.
摘要翻译：本发明涉及一种具有复合介电栅极MOSFET结构的光敏检测器及其信号读出方法。 MOSFET结构检测器形成在p型半导体衬底上。 N型半导体区域位于p型半导体衬底的顶部的两侧，以形成源极和漏极。依次将基底电介质层，光电子存储层，顶部电介质层和控制栅极堆叠在基板上。顶部绝缘介电层可以防止存储在光电子存储层中的光电子泄漏到控制栅极中。当光电子被收集并注入到要保持在其中的光电子储存层时，源极和漏极是浮置的。存在用于检测基板或栅极表面上的入射光形成的透明或半透明窗口。本发明的检测器具有优异的可扩展性，与闪存制造技术的基本兼容性，低漏电流，比CCD更高的成像速度，对处理缺陷的灵敏度，对其他结构的动态范围更大，信号读出精度更高。

5. 外观设计

USD1026276S1 Solar light 有权
公开(公告)号：USD1026276S1
公开(公告)日：2024-05-07
申请号：US29921386
申请日：2023-12-16
申请人： Feng Yan
设计人： Feng Yan
摘要： FIG. 1 is a perspective view of a solar light showing the claimed design;
FIG. 2 is another perspective view thereof;
FIG. 3 is a front elevational view thereof;
FIG. 4 is a rear elevational view thereof;
FIG. 5 is a left side view thereof;
FIG. 6 is a right side view thereof;
FIG. 7 is a top plan view thereof; and,
FIG. 8 is a bottom plan view thereof.
The broken lines depict portions of the solar light that form no part of the claimed design.

6. 发明公开

US20240011456A1 Tidal stream generation apparatus 审中-公开
公开(公告)号：US20240011456A1
公开(公告)日：2024-01-11
申请号：US18233901
申请日：2023-08-15
申请人： Feng-Yan Shen
发明人： Feng-Yan Shen
IPC分类号： F03B13/08 , F03B3/02
CPC分类号： F03B13/08 , F03B3/02 , F05B2220/32 , F05B2220/7064
摘要： A generating apparatus for generating electrical power from a water flow to electrical energy includes a support structure; an electrical power generation arrangement; and a drain tank. The support structure includes a pipe extending into seawater, a tidal stream generation device in the pipe, and a water tank in fluid communication with the pipe. The tidal stream generation device includes a turbine for directing seawater from the pipe therein, a shaft co-rotated with the turbine, a reduction gearbox connected to the shaft, an output shaft extending out of the reduction gearbox, an alternator driven by the output shaft to convert mechanical energy to electrical energy, and an electrical grid electrically connected to the alternator. The electrical power generation arrangement includes at least one electrical energy generation device in communication with the water tank. Each electrical energy generation device includes interconnected bends and tidal stream generators in the bends.

7. 外观设计

USD1003497S1 LED light 有权
公开(公告)号：USD1003497S1
公开(公告)日：2023-10-31
申请号：US29890660
申请日：2023-04-26
申请人： Feng Yan
设计人： Feng Yan
摘要： FIG. 1 is a perspective view of a LED light, showing my new design;
FIG. 2 is a another perspective view thereof;
FIG. 3 is a front elevational view thereof;
FIG. 4 is a rear elevational view thereof;
FIG. 5 is a left side elevational view thereof;
FIG. 6 is a right side elevational view thereof;
FIG. 7 is a top plan view thereof;
FIG. 8 is a bottom plan view thereof; and,
FIG. 9 is an enlarged view of portion 9 shown in FIG. 1.
The dash-dash broken lines in the drawings depict portions of the LED light that form no part of the claimed design. The dot-dash broken lines in the drawings denote the boundaries of the enlarged detail view and form no part of the claimed design.

8. 外观设计

USD980894S1 Camera 有权
公开(公告)号：USD980894S1
公开(公告)日：2023-03-14
申请号：US29790265
申请日：2021-11-16
申请人： Feng Yan
设计人： Feng Yan

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