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1. 发明授权

US08604409B2 Photosensitive detector with composite dielectric gate MOSFET structure and its signal readout method 有权
标题翻译：具有复合介质栅MOSFET结构的感光探测器及其信号读出方法
公开(公告)号：US08604409B2
公开(公告)日：2013-12-10
申请号：US13126079
申请日：2010-02-10
申请人： Feng Yan , Rong Zhang , Yi Shi , Lin Pu , Yue Xu , Fuwei Wu , Xiaofeng Bo , Haoguang Xia
发明人： Feng Yan , Rong Zhang , Yi Shi , Lin Pu , Yue Xu , Fuwei Wu , Xiaofeng Bo , Haoguang Xia
IPC分类号： H01L31/00
CPC分类号： H01L27/14643 , H01L27/14614 , H01L31/1136
摘要： The present invention relates to a photosensitive detector with a composite dielectric gate MOSFET structure and its signal readout method. The MOSFET structure detector is formed on a p-type semiconductor substrate. N-type semiconductor regions locate on the two sides of the top part of the p-type semiconductor substrate to form a source and a drain. An underlying dielectric layer, a photo-electron storage layer, a top dielectric layer, and a control gate are stacked on the substrate in sequence. The top insulating dielectric layer can prevent the photoelectrons stored in the photo-electron storage layer from leaking into the control gate. The source and the drain are floating when photoelectrons are collected and injected into the photoelectron storing layer to be held therein. There is a transparent or semi-transparent window for detecting incident light forming on the substrate or gate surface. This invented detector has excellent scalability, basic compatibility with the flash memory fabricating technology, low leakage current, higher imaging speed than CCD, non-sensitivity to processing defects, larger dynamic range than other structures and higher accuracy of signal readout.
摘要翻译：本发明涉及一种具有复合介电栅极MOSFET结构的光敏检测器及其信号读出方法。 MOSFET结构检测器形成在p型半导体衬底上。 N型半导体区域位于p型半导体衬底的顶部的两侧，以形成源极和漏极。依次将基底电介质层，光电子存储层，顶部电介质层和控制栅极堆叠在基板上。顶部绝缘介电层可以防止存储在光电子存储层中的光电子泄漏到控制栅极中。当光电子被收集并注入到要保持在其中的光电子储存层时，源极和漏极是浮置的。存在用于检测基板或栅极表面上的入射光形成的透明或半透明窗口。本发明的检测器具有优异的可扩展性，与闪存制造技术的基本兼容性，低漏电流，比CCD更高的成像速度，对处理缺陷的灵敏度，对其他结构的动态范围更大，信号读出精度更高。

2. 发明申请

US20110215227A1 Photosensitive Detector with Composite Dielectric Gate MOSFET Structure and Its Signal Readout Method 有权
标题翻译：具有复合介电栅极MOSFET结构的光敏检测器及其信号读出方法
公开(公告)号：US20110215227A1
公开(公告)日：2011-09-08
申请号：US13126079
申请日：2010-02-10
申请人： Feng Yan , Rong Zhang , Yi Shi , Lin Pu , Yue Xu , Fuwei Wu , Xiaofeng Bo , Haoguang Xia
发明人： Feng Yan , Rong Zhang , Yi Shi , Lin Pu , Yue Xu , Fuwei Wu , Xiaofeng Bo , Haoguang Xia
IPC分类号： H01L31/112 , H03F3/08
CPC分类号： H01L27/14643 , H01L27/14614 , H01L31/1136
摘要： The present invention relates to a photosensitive detector with a composite dielectric gate MOSFET structure and its signal readout method. The MOSFET structure detector is formed on a p-type semiconductor substrate. N-type semiconductor regions locate on the two sides of the top part of the p-type semiconductor substrate to form a source and a drain. An underlying dielectric layer, a photo-electron storage layer, a top dielectric layer, and a control gate are stacked on the substrate in sequence. The top insulating dielectric layer can prevent the photoelectrons stored in the photo-electron storage layer from leaking into the control gate. The source and the drain are floating when photoelectrons are collected and injected into the photoelectron storing layer to be held therein. There is a transparent or semi-transparent window for detecting incident light forming on the substrate or gate surface. This invented detector has excellent scalability, basic compatibility with the flash memory fabricating technology, low leakage current, higher imaging speed than CCD, non-sensitivity to processing defects, larger dynamic range than other structures and higher accuracy of signal readout.
摘要翻译：本发明涉及一种具有复合介电栅极MOSFET结构的光敏检测器及其信号读出方法。 MOSFET结构检测器形成在p型半导体衬底上。 N型半导体区域位于p型半导体衬底的顶部的两侧，以形成源极和漏极。依次将基底电介质层，光电子存储层，顶部电介质层和控制栅极堆叠在基板上。顶部绝缘介电层可以防止存储在光电子存储层中的光电子泄漏到控制栅极中。当光电子被收集并注入到要保持在其中的光电子储存层时，源极和漏极是浮置的。存在用于检测基板或栅极表面上的入射光形成的透明或半透明窗口。本发明的检测器具有优异的可扩展性，与闪存制造技术的基本兼容性，低漏电流，比CCD更高的成像速度，对处理缺陷的灵敏度，对其他结构的动态范围更大，信号读出精度更高。

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