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1. 发明授权

US06846519B2 Method and apparatus for electroless deposition with temperature-controlled chuck 失效
标题翻译：用温度控制卡盘进行无电沉积的方法和装置
公开(公告)号：US06846519B2
公开(公告)日：2005-01-25
申请号：US10242331
申请日：2002-09-13
申请人： Igor C. Ivanov , Jonathan Welgun Zhang , Artur Kolics
发明人： Igor C. Ivanov , Jonathan Welgun Zhang , Artur Kolics
IPC分类号： C23C18/16 , H01L21/00 , B05D1/18
CPC分类号： H01L21/67109 , C23C18/1619 , C23C18/1676 , C23C18/1678 , C23C18/168 , C23C18/1682
摘要： The method for electroless deposition of a coating material, which may be a metal, semiconductor, or dielectric, that is carried out at a relatively low temperature of the working solution compensated by an increased temperature on the substrate which is controlled by a heater built into the substrate chuck. A decrease in the temperature of the working solution prevents thermal decomposition of the solution and reduces formation of gas bubbles, normally generated at increased temperatures. Accumulation of bubbles on the surface of the substrate is further prevented due to upwardly-facing orientation of the treated surface of the substrate. The substrate holder is equipped with a substrate heater and a substrate cooler, that can be used alternatingly for quick heating or cooling of the substrate surface.
摘要翻译：用于无电沉积涂覆材料的方法，其可以是金属，半导体或电介质，其在工作溶液的相对低的温度下进行，所述工作溶液由基板上升高的温度补偿，所述温度由内置的基板卡盘。工作溶液的温度降低可防止溶液的热分解，并减少通常在升高的温度下产生的气泡的形成。由于衬底的处理表面的向上取向，进一步防止了衬底表面积聚的气泡。衬底保持器配备有基板加热器和基板冷却器，其可以交替地用于快速加热或冷却基板表面。

2. 发明授权

US06939403B2 Spatially-arranged chemical processing station 有权
标题翻译：空间化学处理站
公开(公告)号：US06939403B2
公开(公告)日：2005-09-06
申请号：US10299069
申请日：2002-11-19
申请人： Igor Ivanov , Chiu Ting , Jonathan Weiguo Zhang , Arthur Kolics
发明人： Igor Ivanov , Chiu Ting , Jonathan Weiguo Zhang , Arthur Kolics
IPC分类号： H01L21/00 , H01L21/677 , B05C11/02
CPC分类号： H01L21/67173 , H01L21/67017 , H01L21/67178 , H01L21/67769
摘要： The present invention discloses a station, e.g., for IC fabrication with a flexible configuration. It consists of an array of processing chambers, which are grouped into processing modules and arranged in a two-dimensional fashion, in vertical levels and horizontal rows, and is capable of operating independent of each other. Each processing chamber can perform electroless deposition and other related processing steps sequentially on a wafer with more than one processing fluid without having to remove it from the chamber. The system is served by a single common industrial robot, which may have random access to all the working chambers and cells of the storage unit for transporting wafers between the wafer cassettes and inlet/outlets ports of any of the chemical processing chambers. The station occupies a service-room floor space and a clean-room floor space. The processing modules and the main chemical management unit connected to the local chemical supply unit occupy a service-room floor space, while the robot and the wafer storage cassettes are located in a clean room. Thus, in distinction to the known cluster-tool machines, the station of the invention makes it possible to transfer part of the units from the expensive clean-room area to less-expensive service area.
摘要翻译：本发明公开了一种站，例如用于具有柔性配置的IC制造。它由一系列处理室组成，它们分组成处理模块，并以垂直水平和水平行的二维方式布置，并且能够彼此独立运行。每个处理室可以在具有多于一种处理流体的晶片上顺序地进行无电沉积和其它相关处理步骤，而不必将其从室中移除。该系统由单个通用工业机器人服务，其可以随机访问存储单元的所有工作室和单元，用于在晶片盒之间传送晶片和任何化学处理室的入口/出口端口。车站占用服务室的空间和洁净室的空间。连接到本地化学品供应单元的处理模块和主要化学品管理单元占用服务室的空间，而机器人和晶片存储盒位于洁净室中。因此，与已知的集群工具机器不同，本发明的工作站使得可以将部分单元从昂贵的清洁室区域转移到不太昂贵的服务区域。

3. 发明申请

US20050221015A1 Apparatus and method for electroless deposition of materials on semiconductor substrates 有权
标题翻译：在半导体衬底上无电沉积材料的装置和方法
公开(公告)号：US20050221015A1
公开(公告)日：2005-10-06
申请号：US11138531
申请日：2005-05-26
申请人： Igor Ivanov , Jonathan Zhang , Artur Kolics
发明人： Igor Ivanov , Jonathan Zhang , Artur Kolics
IPC分类号： C23C18/16 , H01L21/288 , C25D3/56
CPC分类号： C23C18/1676 , C23C18/1628 , C23C18/163 , C23C18/1632 , C23C18/168 , C23C18/1682 , H01L21/288
摘要： An apparatus of the invention has a closable chamber that can be sealed and is capable of withstanding an increased pressure and high temperature. The chamber contains a substrate holder that can be rotated around a vertical axis, and an edge-grip mechanism inside the substrate holder. The deposition chamber has several inlet ports for the supply of various process liquids, such as deposition solutions, DI water for rinsing, etc., and a port for the supply of a gas under pressure. The apparatus is also provided with reservoirs and tanks for processing liquids and gases, as well as with a solution heater and a control system for controlling temperature and pressure in the chamber. The heater can be located outside the working chamber or built into the substrate holder, or both heaters can be used simultaneously. Uniform deposition is achieved by carrying out the deposition process under pressure and under temperature slightly below the boiling point of the solution. The solution can be supplied from above via a shower head formed in the cover, or through the bottom of the chamber. Rinsing or other auxiliary solutions are supplied via a radially moveable chemical dispensing arm that can be arranged above the substrate parallel thereto.
摘要翻译：本发明的装置具有一个能够被密封并能承受增加的压力和高温的封闭室。所述腔室包含能够围绕垂直轴线旋转的衬底保持器，以及衬底保持器内部的边缘抓握机构。沉积室具有用于供应各种处理液体的多个入口端口，例如沉积溶液，用于冲洗的去离子水等，以及用于在压力下供应气体的端口。该设备还设置有用于处理液体和气体的储存器和罐，以及用于控制室中的温度和压力的溶液加热器和控制系统。加热器可以位于工作室外部或内置于基板支架中，也可以同时使用两个加热器。通过在压力下和稍低于溶液沸点的温度下进行沉积工艺来实现均匀沉积。该解决方案可以从上面通过形成在盖中的淋浴喷头或者通过室的底部供应。冲洗或其它辅助溶液经由可平行于其上的衬底上方的可径向移动的化学分配臂供应。

4. 发明授权

US06881437B2 Methods and system for processing a microelectronic topography 失效
标题翻译：用于处理微电子拓扑的方法和系统
公开(公告)号：US06881437B2
公开(公告)日：2005-04-19
申请号：US10462167
申请日：2003-06-16
申请人： Igor C. Ivanov , Weiguo Zhang
发明人： Igor C. Ivanov , Weiguo Zhang
IPC分类号： H01L21/00 , H01L21/687 , B05D5/12 , B05D1/18 , B05D3/12
CPC分类号： H01L21/68728 , H01L21/67051 , H01L21/6708 , Y02P80/30
摘要： Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, the methods may include loading the topography into a chamber, closing the chamber to form an enclosed area, and supplying fluids to the enclosed area. In some embodiments, the fluids may fill the enclosed area. In addition or alternatively, a second enclosed area may be formed about the topography. As such, the provided system may be adapted to form different enclosed areas about a substrate holder. In some cases, the method may include agitating a solution to minimize the accumulation of bubbles upon a wafer during an electroless deposition process. As such, the system provided herein may include a means for agitating a solution in some embodiments. Such a means for agitation may be distinct from the inlet/s used to supply the solution to the chamber.
摘要翻译：提供了适于处理微电子拓扑的方法和系统，特别是与无电沉积工艺相关联。通常，方法可以包括将形貌加载到腔室中，关闭腔室以形成封闭区域，并将流体供应到封闭区域。在一些实施例中，流体可以填充封闭区域。另外或替代地，围绕地形可以形成第二封闭区域。因此，所提供的系统可以适于在基板保持器周围形成不同的封闭区域。在一些情况下，该方法可以包括搅拌溶液以在无电沉积工艺期间使气泡在晶片上的累积最小化。因此，本文提供的系统可以包括在一些实施例中用于搅拌溶液的装置。用于搅拌的这种手段可能不同于用于将溶液供应到室的入口。

5. 发明授权

US06913651B2 Apparatus and method for electroless deposition of materials on semiconductor substrates 有权
公开(公告)号：US06913651B2
公开(公告)日：2005-07-05
申请号：US10103015
申请日：2002-03-22
申请人： Igor Ivanov , Jonathan Weiguo Zhang , Artur Kolics
发明人： Igor Ivanov , Jonathan Weiguo Zhang , Artur Kolics
IPC分类号： C23C18/16 , H01L21/288 , B05C5/00 , B05C11/00
CPC分类号： C23C18/1676 , C23C18/1628 , C23C18/163 , C23C18/1632 , C23C18/168 , C23C18/1682 , H01L21/288
摘要： An apparatus of the invention has a closable chamber that can be sealed and is capable of withstanding an increased pressure and high temperature. The chamber contains a substrate holder that can be rotated around a vertical axis, and an edge-grip mechanism inside the substrate holder. The deposition chamber has several inlet ports for the supply of various process liquids, such as deposition solutions, DI water for rinsing, etc., and a port for the supply of a gas under pressure. The apparatus is also provided with reservoirs and tanks for processing liquids and gases, as well as with a solution heater and a control system for controlling temperature and pressure in the chamber. The heater can be located outside the working chamber or built into the substrate holder, or both heaters can be used simultaneously. Uniform deposition is achieved by carrying out the deposition process under pressure and under temperature slightly below the boiling point of the solution. The solution can be supplied from above via a shower head formed in the cover, or through the bottom of the chamber. Rinsing or other auxiliary solutions are supplied via a radially moveable chemical dispensing arm that can be arranged above the substrate parallel thereto.

6. 发明授权

US06911067B2 Solution composition and method for electroless deposition of coatings free of alkali metals 有权
标题翻译：用于无碱沉积不含碱金属的涂层的溶液组成和方法
公开(公告)号：US06911067B2
公开(公告)日：2005-06-28
申请号：US10339260
申请日：2003-01-10
申请人： Artur Kolics , Nicolai Petrov , Chiu Ting , Igor C. Ivanov
发明人： Artur Kolics , Nicolai Petrov , Chiu Ting , Igor C. Ivanov
IPC分类号： C23C18/50 , C23C18/52
CPC分类号： C23C18/50
摘要： An electroless deposition solution of the invention for forming an alkali-metal-free coating on a substrate comprises a first-metal ion source for producing first-metal ions, a pH adjuster in the form of a hydroxide for adjusting the pH of the solution, a reducing agent, which reduces the first-metal ions into the first metal on the substrate, a complexing agent for keeping the first-metal ions in the solution, and a source of ions of a second element for generation of second-metal ions that improve the corrosion resistance of the aforementioned coating. The method of the invention consists of the following steps: preparing hydroxides of a metal such as Ni and Co by means of a complexing reaction, in which solutions of hydroxides of Ni and Co are obtained by displacing hydroxyl ions OH− beyond the external boundary of ligands of mono- or polydental complexants; preparing a complex composition based on a tungsten oxide WO3 or a phosphorous tungstic acid, such as H3[P(W3O10)4], as well as on the use of tungsten compounds for improving anti-corrosive properties of the deposited films; mixing the aforementioned solutions of salts of Co, Ni, or W and maintaining under a temperatures within the range of 20° C. to 100° C.; and carrying out deposition from the obtained mixed solution.
摘要翻译：本发明的用于在基材上形成无碱金属的涂层的无电沉积溶液包括用于产生第一金属离子的第一金属离子源，用于调节溶液pH的氢氧化物形式的pH调节剂，还原剂，其将第一金属离子还原成基底上的第一金属，用于将第一金属离子保持在溶液中的络合剂和用于产生第二金属离子的第二元素的离子源，提高上述涂层的耐腐蚀性。本发明的方法包括以下步骤：通过络合反应制备金属如Ni和Co的氢氧化物，其中通过置换羟基离子得到Ni和Co的氢氧化物溶液， SUP>超出单齿或多齿配位体配体的外界; 制备基于氧化钨WO 3或磷钨酸的复合组合物，例如H 3 [P（W 3 N）O _{10），以及使用钨化合物改善沉积膜的抗腐蚀性能; 将上述Co，Ni或W的盐溶液混合并保持在20℃至100℃的温度范围内。并从所得混合溶液中进行沉积。}

7. 发明授权

US06902605B2 Activation-free electroless solution for deposition of cobalt and method for deposition of cobalt capping/passivation layer on copper 有权
标题翻译：用于沉积钴的无活化无电解液和用于在铜上沉积钴覆盖/钝化层的方法
公开(公告)号：US06902605B2
公开(公告)日：2005-06-07
申请号：US10379692
申请日：2003-03-06
申请人： Artur Kolics , Nicolai Petrov , Chiu Ting , Igor Ivanov
发明人： Artur Kolics , Nicolai Petrov , Chiu Ting , Igor Ivanov
IPC分类号： C23C18/36 , C23C18/50 , C23C18/34 , B05D1/18
CPC分类号： H01L21/288 , C23C18/36 , C23C18/50 , H01L21/76849
摘要： The present invention relates to compositions and a method for electroless formation of alkaline-metal-free coatings on the basis of cobalt and composition of cobalt with tungsten and phosphorus, which have high resistance to oxidation and stability of electrical characteristics, when the Co—Cu system layer is used in IC chips. The composition of the electroless solution contains more than one reducing agents, one of which can catalyze the initial electroless deposition layer of cobalt on copper (called initiator), while the other maintains deposition of cobalt on the aforementioned initial layer as the process is continued. Small amount (100-5000 ppm) of elements from the initiator also builds into the electroless film, which is expected to further improve the barrier properties of the resultant film compared to the deposition bath without initiator. Such coating may find application in semiconductor manufacturing where properties of deposited films and controllability of the composition and physical and chemical characteristics of the deposited films may be critically important.
摘要翻译：本发明涉及组合物和无碱形成无碱金属的涂层的方法，其中钴和钴与钨和磷的组成具有很高的耐氧化性和电特性的稳定性，当Co-Cu 系统层用于IC芯片。无电溶液的组成包含多于一种还原剂，其中之一可以催化铜上的钴的初始无电沉积层（称为引发剂），而另一种还原剂继续在上述初始层上沉积钴。来自引发剂的少量（100-5000ppm）元素也构成化学镀膜，预期与无引发剂的沉积浴相比，可以进一步提高所得膜的阻隔性能。这种涂层可以应用于半导体制造中，其中沉积膜的性质和组成的可控性以及沉积膜的物理和化学特性可能是至关重要的。

8. 发明授权

US06860944B2 Microelectronic fabrication system components and method for processing a wafer using such components 失效
公开(公告)号：US06860944B2
公开(公告)日：2005-03-01
申请号：US10462180
申请日：2003-06-16
申请人： Igor C. Ivanov , Welguo Zhang
发明人： Igor C. Ivanov , Welguo Zhang
IPC分类号： C23C18/16 , H01L21/00 , H01L21/288 , H01L21/768 , C23C14/00
CPC分类号： H01L21/76843 , C23C18/1619 , H01L21/288 , H01L21/6715 , H01L21/76802 , H01L21/76831 , H01L21/76834 , H01L21/76849 , H01L21/76855 , H01L21/76856 , H01L21/76862 , H01L21/76864 , H01L21/76874
摘要： A process chamber is provided which includes a gate configured to align barriers with an opening of the gate and an opening of the process chamber such that the two openings are either sealed or provide an air passage to the chamber. A method is provided and includes sealing an opening of a chamber with a gate latch and exposing a topography to a first set of process steps, opening the gate latch such that an air passage is provided to the process chamber, and exposing the topography to a second set of process steps without allowing liquids within the chamber to flow through the air passage. A substrate holder comprising a clamping jaw with a lever and a support member coupled to the lever is also contemplated herein. A process chamber with a reservoir arranged above a substrate holder is also provided herein.

9. 发明申请

US20090253262A1 ELECTROLESS PLATING SYSTEM 有权
标题翻译：电镀系统
公开(公告)号：US20090253262A1
公开(公告)日：2009-10-08
申请号：US11549644
申请日：2006-10-14
申请人： Igor Ivanov , Robert D. Tas , Shashank Ravindra Kulkarni , Ron Rulkens
发明人： Igor Ivanov , Robert D. Tas , Shashank Ravindra Kulkarni , Ron Rulkens
IPC分类号： H01L21/3205 , C23C18/52 , B05C3/02
CPC分类号： C23C18/1683 , C23C18/1628 , C23C18/1682
摘要： An electroless plating system includes a plating solution, and controlling reducing agents in the plating solution for deposition over outlier features smaller than about five hundred nanometers and isolated by about one thousand nanometers.
摘要翻译：无电解电镀系统包括电镀液，并且控制电镀液中的还原剂，用于沉积超过约五百纳米并隔离约一千纳米的离子值特征。

10. 发明授权

US07235483B2 Method of electroless deposition of thin metal and dielectric films with temperature controlled stages of film growth 有权
标题翻译：用薄膜生长的温度控制阶段的薄金属和介电膜的无电沉积方法
公开(公告)号：US07235483B2
公开(公告)日：2007-06-26
申请号：US10299070
申请日：2002-11-19
申请人： Igor C. Ivanov
发明人： Igor C. Ivanov
IPC分类号： H01L21/44
CPC分类号： C23C18/1651 , C23C18/168 , H01L21/288
摘要： The method of the invention comprises accumulating experimental data or obtaining existing data with regard to the optimal time-temperature relationship of the deposition process on various film-formation stages for various materials, forming nuclei of a selected material on the surface of the treated object in the first stage under first temperature-controlled conditions for the formation of nuclei of said selected material, converting the nuclei of the aforementioned selected material into island-structured deposited layer of said material by causing lateral growth of the nuclei under second temperature-controlled conditions; converting the island-structure layer into a continuously interconnected cluster structure by causing further lateral growth of said island-structured deposited layer under third temperature-controlled conditions; forming a first continuous film of said material under fourth temperature controlled conditions which provides said first continuous film with predetermined properties; and then completing the formation of a final coating film by growing at least one subsequent continuous film of said material under fifth temperature-controlled conditions until a film of a predetermined thickness is obtained. The fifth temperature-controlled conditions may be characterized by a pulse-mode or step-like variations of temperature in time with rapid cooling or heating for obtaining high degree of crystallinity or for increase in the rate of deposition. The method of the invention could be realized with the use of the electroless deposition apparatus with instantaneous cooling or heating of the object, e.g., a semiconductor substrate, in a deposition chamber.
摘要翻译：本发明的方法包括累积实验数据或获得关于各种材料的各种成膜阶段的沉积过程的最佳时间 - 温度关系的现有数据，在被处理物体的表面上形成选定材料的核在用于形成所述选定材料的核的第一温度控制条件下的第一阶段，通过在第二温度控制条件下引起核的横向生长，将上述选择的材料的核转化成所述材料的岛状沉积层; 通过在第三温度控制条件下进一步横向生长所述岛状沉积层，将岛状结构层转化为连续互连的簇结构; 在第四温度控制条件下形成所述材料的第一连续膜，其提供具有预定特性的所述第一连续膜; 然后通过在第五温度控制条件下生长所述材料的至少一个随后的连续膜直到获得预定厚度的膜来完成最终涂膜的形成。第五温度控制条件的特征可以在于快速冷却或加热以获得高结晶度或者提高沉积速率的时间上的脉冲模式或阶梯状的温度变化。本发明的方法可以通过在沉积室中使用具有瞬间冷却或加热物体（例如半导体衬底）的无电沉积设备来实现。

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