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1. 发明申请

US20080246023A1 Transistor Based on Resonant Tunneling Effect of Double Barrier Tunneling Junctions 审中-公开
标题翻译：基于双阻挡隧道结共振隧穿效应的晶体管
公开(公告)号：US20080246023A1
公开(公告)日：2008-10-09
申请号：US11663684
申请日：2005-04-08
申请人： Zhongming Zeng , Xiufeng Han , Jiafeng Feng , Tianxing Wang , Guanxiang Du , Feifei Li , Wenshan Zhan
发明人： Zhongming Zeng , Xiufeng Han , Jiafeng Feng , Tianxing Wang , Guanxiang Du , Feifei Li , Wenshan Zhan
IPC分类号： H01L29/06 , H01L27/082
CPC分类号： H01L29/66984 , B82Y10/00 , H01L29/7376
摘要： The present invention relates to a transistor based on resonant tunneling effect of double barrier tunneling junctions comprising: a substrate, an emitter, a base, a collector and a first and a second tunneling barrier layers; wherein the first tunneling barrier layer is located between the emitter and the base, and the second tunneling barrier layer is located between the base and the collector; furthermore, the junction areas of the tunneling junctions which are formed between the emitter and the base and between the base and collector respectively are 1 μm2˜10000 μm2; the thickness of the base is comparable to the electron mean free path of material in the layer; the magnetization orientation is unbounded in one and only one pole of said emitter, base and collector. Because the double-barrier structure is used, it overcomes the Schottky potential between the base and the collector. Wherein the base current is a modulating signal, the collector signal is modulated to be similar to the base current's modulating mode by changing the magnetization orientation of the base or the collector, i.e., the resonant tunneling effect occurs. An amplified signal can be obtained under the suitable conditions.
摘要翻译：本发明涉及一种基于双阻挡隧道结的谐振隧道效应的晶体管，包括：衬底，发射极，基极，集电极和第一和第二隧道势垒层; 其中所述第一隧道势垒层位于所述发射极和所述基极之间，并且所述第二隧穿势垒层位于所述基极和所述集电极之间; 此外，形成在发射极和基极之间以及基极和集电极之间的隧道结的接合面分别为1μm2〜10000μm2。基底的厚度与层中材料的电子平均自由程相当; 磁化方向在所述发射极，基极和集电极的一个且仅一个极中是无界的。因为使用双重阻挡结构，它克服了基极和集电极之间的肖特基电位。其中基极电流是调制信号，通过改变基极或集电极的磁化取向，即发生谐振隧穿效应，将集电极信号调制成与基极电流的调制模式相似。在合适的条件下可以获得放大的信号。

2. 发明申请

US20090011284A1 Core Composite Film for a Magnetic/Nonmagnetic/Magnetic Multilayer Thin Film and Its Useage 审中-公开
标题翻译：用于磁/非磁/磁多层薄膜的芯复合膜及其应用
公开(公告)号：US20090011284A1
公开(公告)日：2009-01-08
申请号：US11909553
申请日：2006-03-24
申请人： Tianxing Wang , Zhongming Zeng , Guanxiang Du , Xiufeng Han , Zhenmin Hong , Gauquan Shi
发明人： Tianxing Wang , Zhongming Zeng , Guanxiang Du , Xiufeng Han , Zhenmin Hong , Gauquan Shi
IPC分类号： G11B5/706
CPC分类号： B82Y25/00 , G11B5/3909 , G11B2005/3996 , H01F10/005 , H01F10/3268
摘要： The present invention relates to a core composite film for magnetic/nonmagnetic/magnetic multilayer thin film comprising a free magnetic layer, a spacer layer and a pinned magnetic layer. As the core composite film, it may be only the spacer layer is an LB film; and the spacer layer is an organic LB film consisting of materials with insulative, conductive or semiconductive character. As the core composite film, it may also be said free magnetic layer, spacer layer and pinned magnetic layer are all LB films; wherein the pinned magnetic layer and the free magnetic layer are organic films made of magnetic materials. The core composite film can be applied to a magnetic spin valve sensor, which can compose a magnetic induction unit of a magnetic spin valve sensor; and it can also be applied to a magnetic random access memory as a memory cell. Uniformity and consistency can be kept over large areas for the core composite film, and the process thereof is simple and the cost is low; moreover, by use of an LB organic film substituting for conventional spacer layer and magnetic layer, devices are made lighter, thinner, easier to be processed to and integrated.
摘要翻译：本发明涉及一种包含自由磁性层，间隔层和钉扎磁性层的磁/非磁/多层薄膜的芯复合膜。作为芯复合膜，可以仅间隔层为LB膜; 并且间隔层是由具有绝缘性，导电性或半导体特性的材料构成的有机LB膜。作为芯复合膜，也可以是自由磁性层，间隔层和固定磁性层都是LB膜; 其中被钉扎的磁性层和自由磁性层是由磁性材料制成的有机膜。核心复合膜可以应用于磁性自旋阀传感器，其可以组成磁性自旋阀传感器的磁感应单元; 并且也可以应用于作为存储单元的磁性随机存取存储器。核心复合膜可以在大面积上保持均匀性和一致性，其工艺简单，成本低; 此外，通过使用代替常规间隔层和磁性层的LB有机膜，使得器件更轻，更薄，更易于加工和集成。

3. 发明授权

US08236576B2 Magnetic logic element with toroidal multiple magnetic films and a method of logic treatment using the same 有权
标题翻译：具有环形多磁膜的磁逻辑元件和使用其的逻辑处理方法
公开(公告)号：US08236576B2
公开(公告)日：2012-08-07
申请号：US12296812
申请日：2007-04-11
申请人： Xiufeng Han , Zhongming Zeng , Yunan Han , Lixian Jiang , Zilong Peng , Wenshan Zhan
发明人： Xiufeng Han , Zhongming Zeng , Yunan Han , Lixian Jiang , Zilong Peng , Wenshan Zhan
IPC分类号： G11C11/02 , H01L29/82
CPC分类号： G11C11/155 , B82Y25/00 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01F10/325 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F10/329 , H01L43/08 , H03K19/16 , Y10T29/53165
摘要： A magnetic logic element with toroidal magnetic multilayers (5,6,8,9). The magnetic logic element comprises a toroidal closed section which is fabricated by etching a unit of magnetic multilayers (5,6,8,9) deposited on a substrate. Optionally, the magnetic logic element may also comprise a metal core (10) in the closed toroidal section. Said magnetic multilayers (5,6,8,9) unit is arranged on the input signal lines A, B, C and an output signal line O, and then is made into a closed toroidal. Subsequently, on the toroidal magnetic multilayered unit (5,6,8,9), the input signal lines A′, B′, C′ and an output signal line O′ are fabricated by etching. This magnetic logic element can reduce the demagnetization field and the shape anisotropy effectively, leading to the decrease of the reversal field of magnetic free layer. Furthermore, this magnetic logic element has stable working performance and long operation life of the device.
摘要翻译：具有环形磁性多层（5,6,8,9）的磁性逻辑元件。磁逻辑元件包括通过蚀刻沉积在衬底上的磁性多层（5,6,8,9）单元制造的环形闭合部分。可选地，磁逻辑元件还可以包括在闭合环形部分中的金属芯（10）。所述磁性多层（5,6,8,9）单元布置在输入信号线A，B，C和输出信号线O上，然后制成闭合环形。随后，在环形磁性多层单元（5,6,8,9）上，通过蚀刻制造输入信号线A'，B'，C'和输出信号线O'。该磁逻辑元件可有效地减少退磁场和形状各向异性，导致无磁层反转场的减小。此外，该磁逻辑元件具有稳定的工作性能和较长的使用寿命。

4. 发明申请

US20090273972A1 MAGNETIC LOGIC ELEMENT WITH TOROIDAL MULTIPLE MAGNETIC FILMS AND A METHOD OF LOGIC TREATMENT USING THE SAME 有权
标题翻译：具有多个磁性膜的磁性逻辑元件和使用其的逻辑处理方法
公开(公告)号：US20090273972A1
公开(公告)日：2009-11-05
申请号：US12296812
申请日：2007-04-11
申请人： Xiufeng Han , Zhongming Zeng , Yunan Han , Lixian Jiang , Zilong Peng , Wenshan Zhan
发明人： Xiufeng Han , Zhongming Zeng , Yunan Han , Lixian Jiang , Zilong Peng , Wenshan Zhan
IPC分类号： G11C11/15 , H01L21/00
CPC分类号： G11C11/155 , B82Y25/00 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01F10/325 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F10/329 , H01L43/08 , H03K19/16 , Y10T29/53165
摘要： A magnetic logic element with toroidal magnetic multilayers (5,6,8,9). The magnetic logic element comprises a toroidal closed section which is fabricated by etching a unit of magnetic multilayers (5,6,8,9) deposited on a substrate. Optionally, the magnetic logic element may also comprise a metal core (10) in the closed toroidal section. Said magnetic multilayers (5,6,8,9) unit is arranged on the input signal lines A, B, C and an output signal line O, and then is made into a closed toroidal. Subsequently, on the toroidal magnetic multilayered unit (5,6,8,9), the input signal lines A′, B′, C′ and an output signal line O′ are fabricated by etching. This magnetic logic element can reduce the demagnetization field and the shape anisotropy effectively, leading to the decrease of the reversal field of magnetic free layer. Furthermore, this magnetic logic element has stable working performance and long operation life of the device.
摘要翻译：具有环形磁性多层（5,6,8,9）的磁性逻辑元件。磁逻辑元件包括通过蚀刻沉积在衬底上的磁性多层（5,6,8,9）单元制造的环形闭合部分。可选地，磁逻辑元件还可以包括在闭合环形部分中的金属芯（10）。所述磁性多层（5,6,8,9）单元布置在输入信号线A，B，C和输出信号线O上，然后制成闭合环形。随后，在环形磁性多层单元（5,6,8,9）上，通过蚀刻制造输入信号线A'，B'，C'和输出信号线O'。该磁逻辑元件可有效地减少退磁场和形状各向异性，导致无磁层反转场的减小。此外，该磁逻辑元件具有稳定的工作性能和较长的使用寿命。

5. 发明申请

US20070183186A1 Mram based on vertical current writing and its control method 有权
标题翻译：基于垂直电流写入的Mram及其控制方法
公开(公告)号：US20070183186A1
公开(公告)日：2007-08-09
申请号：US10599514
申请日：2004-12-01
申请人： Zilong Peng , Xiufeng Han , Sufen Zhao , Weining Wang , Wenshan Zhan
发明人： Zilong Peng , Xiufeng Han , Sufen Zhao , Weining Wang , Wenshan Zhan
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , B82Y10/00 , H01L27/228
摘要： The invention discloses a MRAM (Magnetoresistive RAM) based on vertical current writing and its control method, the operation of information writing in the MRAM unit is completed by the corporate effect of the magnetic field generated by the current parallel to the MFC unit and the other current vertical to the MFC unit and passing through this unit. The advantage of such structure is: eliminating a word line (WL) of the prior art especially for information writing, reducing the number of the metal wiring layers and the contact holes, and reducing the complexity of MRAM's structure, and difficulty and cost of manufacturing process.
摘要翻译：本发明公开了一种基于垂直电流写入的MRAM（Magnetoresistive RAM）及其控制方法，MRAM单元中的信息写入操作通过与MFC单元并联的电流产生的磁场的公司效应完成，电流垂直于MFC单元并通过本机。这种结构的优点是：消除现有技术中的字线（WL），特别是用于信息写入，减少金属布线层和接触孔的数量，并降低MRAM的结构的复杂性，以及制造的难度和成本处理。

6. 发明授权

US07480171B2 MRAM based on vertical current writing and its control method 有权
标题翻译：基于垂直电流写入的MRAM及其控制方法
公开(公告)号：US07480171B2
公开(公告)日：2009-01-20
申请号：US10599514
申请日：2004-12-01
申请人： Zilong Peng , Xiufeng Han , Sufen Zhao , Weining Wang , Wenshan Zhan
发明人： Zilong Peng , Xiufeng Han , Sufen Zhao , Weining Wang , Wenshan Zhan
IPC分类号： G11C7/00
CPC分类号： G11C11/16 , B82Y10/00 , H01L27/228
摘要： The invention discloses a MRAM (Magnetoresistive RAM) based on vertical current writing and its control method, the operation of information writing in the MRAM unit is completed by the corporate effect of the magnetic field generated by the current parallel to the MFC unit and the other current vertical to the MFC unit and passing through this unit. The advantage of such structure is: eliminating a word line (WL) of the prior art especially for information writing, reducing the number of the metal wiring layers and the contact holes, and reducing the complexity of MRAM's structure, and difficulty and cost of manufacturing process.
摘要翻译：本发明公开了一种基于垂直电流写入的MRAM（Magnetoresistive RAM）及其控制方法，MRAM单元中的信息写入操作通过与MFC单元并联的电流产生的磁场的公司效应完成，电流垂直于MFC单元并通过本机。这种结构的优点是：消除现有技术中的字线（WL），特别是用于信息写入，减少金属布线层和接触孔的数量，并降低MRAM的结构的复杂性，以及制造的难度和成本处理。

7. 发明授权

US09484138B2 Nano-patterned system and magnetic-field applying device thereof 有权
标题翻译：纳米图案化系统及其磁场施加装置
公开(公告)号：US09484138B2
公开(公告)日：2016-11-01
申请号：US14389972
申请日：2012-07-17
申请人： Guoqiang Yu , Peng Guo , Xiufeng Han , Chaohui Guo , Xiaoyu Sun , Xiangqian Zhou
发明人： Guoqiang Yu , Peng Guo , Xiufeng Han , Chaohui Guo , Xiaoyu Sun , Xiangqian Zhou
IPC分类号： H01F7/20 , H01F41/00 , G01R33/09 , H01L43/12 , H01J37/09
CPC分类号： H01J37/09 , G01R33/093 , G01R33/096 , H01F7/202 , H01F7/204 , H01F41/00 , H01J37/141 , H01J2237/0262 , H01J2237/0264 , H01J2237/28 , H01J2237/31754 , H01L43/12
摘要： A nano-patterned system comprises a vacuum chamber, a sample stage and a magnetic-field applying device. The magnetic-field applying device comprises a power supply, magnetic poles, and a magnetic-field generation device having a magnetic conductive soft iron core and a coil connected to the power supply and wound on the soft iron core to generate a magnetic field. The soft iron core is a semi-closed frame structure and the magnetic poles are respectively disposed at the two ends of the semi-closed frame structure. The sample stage is inside the vacuum chamber. The magnetic poles are opposite one another inside the vacuum chamber with respect to the sample stage. The coil and soft iron core are outside the vacuum chamber. The soft iron core leads the magnetic field generated by the coil into the vacuum chamber. The magnetic poles locate a sample on the sample stage and apply a local magnetic field.
摘要翻译：纳米图案系统包括真空室，样品台和磁场施加装置。磁场施加装置包括电源，磁极和具有导电软铁芯的磁场产生装置和连接到电源的线圈并缠绕在软铁芯上以产生磁场的磁场产生装置。软铁芯是半封闭框架结构，磁极分别设置在半封闭框架结构的两端。样品台位于真空室内。磁极相对于样品台在真空室内彼此相对。线圈和软铁芯在真空室外。软铁芯将线圈产生的磁场引入真空室。磁极将样品定位在样品台上并施加局部磁场。

8. 发明申请

US20090168506A1 CLOSE SHAPED MAGNETIC MULTI-LAYER FILM COMPRISING OR NOT COMPRISING A METAL CORE AND THE MANUFACTURE METHOD AND THE APPLICATION OF THE SAME 有权
标题翻译：包含或不包含金属核心的闭合形状磁性多层膜及其制造方法及其应用
公开(公告)号：US20090168506A1
公开(公告)日：2009-07-02
申请号：US12159657
申请日：2006-12-31
申请人： Xiufeng Han , Ming Ma , Qihang Tan , Hongxiang Wei , Lixian Jiang , Yunan Han
发明人： Xiufeng Han , Ming Ma , Qihang Tan , Hongxiang Wei , Lixian Jiang , Yunan Han
IPC分类号： G11C11/14 , G11B5/706 , B44C1/22 , H01L29/82
CPC分类号： G11C11/155 , B82Y25/00 , G01R33/093 , G01R33/098 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01F10/1936 , H01F10/3254 , H01F10/3268 , H01F10/329 , H01F41/302 , H01L27/228 , H01L43/08
摘要： Each layer in the magnetic multilayer film is a closed ring or oval ring and the magnetic moment or flux of the ferromagnetic film in the magnetic unit is in close state either clockwise or counterclockwise. A metal core is put in the geometry center position in the close-shaped magnetic multilayer film. The cross section of the metal core is a corresponding circular or oval. A MRAM is made of the closed magnetic multilayer film with or without a metal core. The close-shaped magnetic multilayer film is formed by micro process method. The close-shaped magnetic multilayer film can be used broadly in a great variety of device that uses a magnetic multilayer film as the core, such as MRAM, magnetic bead in computer, magnetic sensitive sensor, magnetic logic device and spin transistor.
摘要翻译：磁性多层膜中的每层是闭环或椭圆环，并且磁性单元中的铁磁性膜的磁矩或磁通处于顺时针或逆时针处于接近状态。将金属芯置于紧密形状的磁性多层膜中的几何中心位置。金属芯的横截面是相应的圆形或椭圆形。 MRAM由具有或不具有金属芯的闭合磁性多层膜制成。通过微加工方法形成紧密形状的磁性多层膜。近似形状的磁性多层膜可以广泛用于以磁性多层膜为核心的多种器件，如MRAM，计算机中的磁珠，磁敏传感器，磁性逻辑器件和自旋晶体管。

9. 发明申请

US20150123754A1 Nano-Patterned System And Magnetic-Field Applying Device Thereof 有权
标题翻译：纳米图案系统及其磁场应用器件
公开(公告)号：US20150123754A1
公开(公告)日：2015-05-07
申请号：US14389972
申请日：2012-07-07
申请人： Guoqiang Yu , Peng Guo , Xiufeng Han , Chaohui Guo , Xiaoyu Sun , Xiangqian Zhou
发明人： Guoqiang Yu , Peng Guo , Xiufeng Han , Chaohui Guo , Xiaoyu Sun , Xiangqian Zhou
IPC分类号： H01F7/20
CPC分类号： H01J37/09 , G01R33/093 , G01R33/096 , H01F7/202 , H01F7/204 , H01F41/00 , H01J37/141 , H01J2237/0262 , H01J2237/0264 , H01J2237/28 , H01J2237/31754 , H01L43/12
摘要： A nano-patterned system comprises a vacuum chamber, a sample stage and a magnetic-field applying device. The magnetic-field applying device comprises a power supply, magnetic poles, and a magnetic-field generation device having a magnetic conductive soft iron core and a coil connected to the power supply and wound on the soft iron core to generate a magnetic field. The soft iron core is a semi-closed frame structure and the magnetic poles are respectively disposed at the two ends of the semi-closed frame structure. The sample stage is inside the vacuum chamber. The magnetic poles are opposite one another inside the vacuum chamber with respect to the sample stage. The coil and soft iron core are outside the vacuum chamber. The soft iron core leads the magnetic field generated by the coil into the vacuum chamber. The magnetic poles locate a sample on the sample stage and apply a local magnetic field.
摘要翻译：纳米图案系统包括真空室，样品台和磁场施加装置。磁场施加装置包括电源，磁极和具有导电软铁芯的磁场产生装置和连接到电源的线圈并缠绕在软铁芯上以产生磁场的磁场产生装置。软铁芯是半封闭框架结构，磁极分别设置在半封闭框架结构的两端。样品台位于真空室内。磁极相对于样品台在真空室内彼此相对。线圈和软铁芯在真空室外。软铁芯将线圈产生的磁场引入真空室。磁极将样品定位在样品台上并施加局部磁场。

10. 发明申请

US20130099780A1 MAGNETIC NANO-MULTILAYERS FOR MAGNETIC SENSORS AND MANUFACTURING METHOD THEREOF 有权
标题翻译：用于磁传感器的磁性纳米多层及其制造方法
公开(公告)号：US20130099780A1
公开(公告)日：2013-04-25
申请号：US13701474
申请日：2011-03-04
申请人： Qinli Ma , Houfang Liu , Xiufeng Han
发明人： Qinli Ma , Houfang Liu , Xiufeng Han
IPC分类号： G01R33/02
CPC分类号： G01R33/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , G11B2005/3996 , G11C11/16 , G11C11/161 , H01L21/00 , H01L43/08 , H01L2221/00 , H01L2223/00 , Y10S977/70
摘要： The invention discloses a magnetic nano-multilayers structure and the method for making it. The multilayer film includes—sequentially from one end to the other end—a substrate, a bottom layer, a magnetic reference layer, a space layer, a magnetic detecting layer and a cap layer. The, up-stated structure is for convert the information of the rotation of the magnetic moment of the magnetic detecting layer into electrical signals. The magnetic detecting layer is of a pinning structure to react to the magnetic field under detection. On the other hand, the invention sandwiches an intervening layer between the AFM and the FM to mitigate the pinning effect from the exchange bias. Moreover, the thickness of the intervening layer is adjustable to control the pinning effect from the exchange bias. The controllability ensures that the magnetic moments of the magnetic reference layer and the magnetic detecting layer remain at right angles to each other when the external field is zero. The invention achieves a GMR or TMR magnetic sensor exhibiting a linear response and by tuning the thickness of the non-magnetic metallic layer, the sensitivity as well as the detecting range of the devices can be tuned easily.
摘要翻译：本发明公开了一种磁性纳米多层结构及其制造方法。多层膜从一端到另一端依次包括基板，底层，磁性基准层，空间层，磁性检测层和盖层。上述结构用于将磁检测层的磁矩的旋转信息转换为电信号。磁检测层具有与被检测的磁场反应的钉扎结构。另一方面，本发明在AFM和FM之间夹着中间层，以减轻交换偏压的钉扎效应。此外，中间层的厚度是可调节的，以控制交换偏压的钉扎效应。当外场为零时，可控性确保磁参考层和磁检测层的磁矩保持彼此成直角。本发明实现了具有线性响应的GMR或TMR磁传感器，并且通过调谐非磁性金属层的厚度，可以容易地调节灵敏度以及器件的检测范围。

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