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1. 发明授权

US07382512B2 Resistivity phase change material 失效
标题翻译：电阻相变材料
公开(公告)号：US07382512B2
公开(公告)日：2008-06-03
申请号：US11259609
申请日：2005-10-26
申请人： Zhizhang Chen , Qin Liu , Timothy F. Myers , Chien-Hua Chen
发明人： Zhizhang Chen , Qin Liu , Timothy F. Myers , Chien-Hua Chen
IPC分类号： G02F1/01 , G02F1/03 , G02F1/1333 , G02F1/1335
CPC分类号： G02F1/135 , G02F1/1334 , G02F1/1354
摘要： Various devices and methods employing a resistive phase change material are disclosed.
摘要翻译：公开了采用电阻相变材料的各种装置和方法。

2. 发明申请

US20070089492A1 Resistivity phase change material 失效
标题翻译：电阻相变材料
公开(公告)号：US20070089492A1
公开(公告)日：2007-04-26
申请号：US11259609
申请日：2005-10-26
申请人： Zhizhang Chen , Qin Liu , Timothy Myers , Chien-Hua Chen
发明人： Zhizhang Chen , Qin Liu , Timothy Myers , Chien-Hua Chen
IPC分类号： G01N11/04
CPC分类号： G02F1/135 , G02F1/1334 , G02F1/1354
摘要： Various devices and methods employing a resistive phase change material are disclosed.
摘要翻译：公开了采用电阻相变材料的各种装置和方法。

3. 发明申请

US20060088980A1 Method of singulating electronic devices 有权
标题翻译：单片电子设备的方法
公开(公告)号：US20060088980A1
公开(公告)日：2006-04-27
申请号：US10975797
申请日：2004-10-27
申请人： Chien-Hua Chen , Zhizhang Chen , Steven Geissler
发明人： Chien-Hua Chen , Zhizhang Chen , Steven Geissler
IPC分类号： H01L21/78 , H01L21/30 , H01L21/50
CPC分类号： B81C1/00888 , H01L21/78 , H01L23/10 , H01L2924/0002 , H01L2924/00
摘要： A method of singulating electronic devices, including aligning a saw blade over a lid street disposed on a lid substrate that is disposed over a device substrate. An electronic device that includes a bond pad is disposed on the device substrate, wherein the lid street is disposed over the bond pad. In addition, the method also includes sawing partially through the lid street to form a trench in the lid street. The trench includes a trench bottom in the lid substrate.
摘要翻译：一种单片电子设备的方法，包括将设置在设置在设备基板上的盖基板上的盖街道上的锯片对准。包括接合焊盘的电子设备设置在设备基板上，其中盖路设置在接合焊盘上方。此外，该方法还包括部分地通过盖街道锯切以在盖街道中形成沟槽。沟槽包括在盖基板中的沟槽底部。

4. 发明申请

US20070254405A1 3D Interconnect with Protruding Contacts 失效
标题翻译： 3D互连触点
公开(公告)号：US20070254405A1
公开(公告)日：2007-11-01
申请号：US11778196
申请日：2007-07-16
申请人： Chien-Hua Chen , Zhizhang Chen , Neal Meyer
发明人： Chien-Hua Chen , Zhizhang Chen , Neal Meyer
IPC分类号： H01L21/50
CPC分类号： H01L23/481 , H01L21/76898 , H01L24/03 , H01L24/05 , H01L24/72 , H01L24/80 , H01L25/0657 , H01L2224/0401 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/13144 , H01L2225/06513 , H01L2225/06541 , H01L2924/01005 , H01L2924/01014 , H01L2924/01018 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/1433 , H01L2924/1461 , H01L2924/15788 , H01L2924/00014 , H01L2924/00
摘要： This invention relates to a semiconductor having protruding contacts comprising, a first semiconductor substrate having at least one interconnect located substantially within the first substrate, and a second semiconductor substrate having at least one protruding contact point that substantially contacts at least one interconnect.
摘要翻译：本发明涉及一种具有突出接点的半导体，包括：第一半导体衬底，具有至少一个基本上位于第一衬底内的互连，第二半导体衬底具有至少一个基本上接触至少一个互连的突出接触点。

5. 发明授权

US07262495B2 3D interconnect with protruding contacts 有权
标题翻译： 3D连接突出接触
公开(公告)号：US07262495B2
公开(公告)日：2007-08-28
申请号：US10960827
申请日：2004-10-07
申请人： Chien-Hua Chen , Zhizhang Chen , Neal W. Meyer
发明人： Chien-Hua Chen , Zhizhang Chen , Neal W. Meyer
IPC分类号： H01L23/48
CPC分类号： H01L23/481 , H01L21/76898 , H01L24/03 , H01L24/05 , H01L24/72 , H01L24/80 , H01L25/0657 , H01L2224/0401 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/13144 , H01L2225/06513 , H01L2225/06541 , H01L2924/01005 , H01L2924/01014 , H01L2924/01018 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/1433 , H01L2924/1461 , H01L2924/15788 , H01L2924/00014 , H01L2924/00
摘要： This invention relates to a semiconductor having protruding contacts comprising, a first semiconductor substrate having at least one interconnect located substantially within the first substrate, and a second semiconductor substrate having at least one protruding contact point that substantially contacts at least one interconnect.
摘要翻译：本发明涉及一种具有突出接点的半导体，包括：第一半导体衬底，具有至少一个基本上位于第一衬底内的互连，第二半导体衬底具有至少一个基本上接触至少一个互连的突出接触点。

6. 发明授权

US07187124B2 Transparent electron source emitter device and method 失效
标题翻译：透明电子源发射装置及方法
公开(公告)号：US07187124B2
公开(公告)日：2007-03-06
申请号：US10781212
申请日：2004-02-17
申请人： Timothy F. Myers , John Chen , Chien-Hua Chen
发明人： Timothy F. Myers , John Chen , Chien-Hua Chen
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01J1/312 , B82Y10/00 , H01J9/022 , H01J31/123
摘要： A photonic assisted emitter including an at least partially transparent electron source layer, a thin metal layer; and a tunneling layer disposed between said at least partially transparent electron source layer and said thin metal layer.
摘要翻译：一种光子辅助发射器，包括至少部分透明的电子源层，薄金属层; 以及设置在所述至少部分透明的电子源层和所述薄金属层之间的隧道层。

7. 发明授权

US07833830B2 3D interconnect with protruding contacts 失效
标题翻译： 3D连接突出接触
公开(公告)号：US07833830B2
公开(公告)日：2010-11-16
申请号：US11778196
申请日：2007-07-16
申请人： Chien-Hua Chen , Zhizhang Chen , Neal W. Meyer
发明人： Chien-Hua Chen , Zhizhang Chen , Neal W. Meyer
IPC分类号： H01L21/00 , H01L23/48
CPC分类号： H01L23/481 , H01L21/76898 , H01L24/03 , H01L24/05 , H01L24/72 , H01L24/80 , H01L25/0657 , H01L2224/0401 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/13144 , H01L2225/06513 , H01L2225/06541 , H01L2924/01005 , H01L2924/01014 , H01L2924/01018 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/1433 , H01L2924/1461 , H01L2924/15788 , H01L2924/00014 , H01L2924/00
摘要： This invention relates to a semiconductor having protruding contacts comprising, a first semiconductor substrate having at least one interconnect located substantially within the first substrate, and a second semiconductor substrate having at least one protruding contact point that substantially contacts at least one interconnect.
摘要翻译：本发明涉及一种具有突出接点的半导体，包括：第一半导体衬底，具有至少一个基本上位于第一衬底内的互连，第二半导体衬底具有至少一个基本上接触至少一个互连的突出接触点。

8. 发明授权

US07422962B2 Method of singulating electronic devices 有权
标题翻译：单片电子设备的方法
公开(公告)号：US07422962B2
公开(公告)日：2008-09-09
申请号：US10975797
申请日：2004-10-27
申请人： Chien-Hua Chen , Zhizhang Chen , Steven R Geissler
发明人： Chien-Hua Chen , Zhizhang Chen , Steven R Geissler
IPC分类号： H01L21/30
CPC分类号： B81C1/00888 , H01L21/78 , H01L23/10 , H01L2924/0002 , H01L2924/00
摘要： A method of singulating electronic devices, including aligning a saw blade over a lid street disposed on a lid substrate that is disposed over a device substrate. An electronic device that includes a bond pad is disposed on the device substrate, wherein the lid street is disposed over the bond pad. In addition, the method also includes sawing partially through the lid street to form a trench in the lid street. The trench includes a trench bottom in the lid substrate.
摘要翻译：一种单片电子设备的方法，包括将设置在设置在设备基板上的盖基板上的盖街道上的锯片对准。包括接合焊盘的电子设备设置在设备基板上，其中盖路设置在接合焊盘上方。此外，该方法还包括部分地通过盖街道锯切以在盖街道中形成沟槽。沟槽包括在盖基板中的沟槽底部。

9. 发明申请

US20060076664A1 3D interconnect with protruding contacts 有权
标题翻译： 3D连接突出接触
公开(公告)号：US20060076664A1
公开(公告)日：2006-04-13
申请号：US10960827
申请日：2004-10-07
申请人： Chien-Hua Chen , Zhizhang Chen , Neal Meyer
发明人： Chien-Hua Chen , Zhizhang Chen , Neal Meyer
IPC分类号： H01L23/02 , H01L23/52
CPC分类号： H01L23/481 , H01L21/76898 , H01L24/03 , H01L24/05 , H01L24/72 , H01L24/80 , H01L25/0657 , H01L2224/0401 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/13144 , H01L2225/06513 , H01L2225/06541 , H01L2924/01005 , H01L2924/01014 , H01L2924/01018 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/1433 , H01L2924/1461 , H01L2924/15788 , H01L2924/00014 , H01L2924/00
摘要： This invention relates to a semiconductor having protruding contacts comprising, a first semiconductor substrate having at least one interconnect located substantially within the first substrate, and a second semiconductor substrate having at least one protruding contact point that substantially contacts at least one interconnect.
摘要翻译：本发明涉及一种具有突出接点的半导体，包括：第一半导体衬底，具有至少一个基本上位于第一衬底内的互连，第二半导体衬底具有至少一个基本上接触至少一个互连的突出接触点。

10. 发明授权

US06481832B2 Fluid-jet ejection device 失效
标题翻译：流体喷射装置
公开(公告)号：US06481832B2
公开(公告)日：2002-11-19
申请号：US09774259
申请日：2001-01-29
申请人： Qin Liu , Naoto Kawamura , Chien-Hua Chen
发明人： Qin Liu , Naoto Kawamura , Chien-Hua Chen
IPC分类号： B41J205
CPC分类号： B41J2/1645 , B41J2/1404 , B41J2/14145 , B41J2/1603 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1634 , B41J2/1635 , Y10T29/49 , Y10T29/49085 , Y10T29/49401
摘要： The invention is a fluid ejection device, such as a printhead, that has a substrate with a first surface mating to an orifice layer, preferably through a stack of thin-film layers. The orifice layer defines a fluid chamber interfacing to an orifice opening or nozzle. The substrate has a second surface having a truncated pyramidal structure; either polyhedral or triangular ridge shaped defining an opening through the substrate to the fluid chamber. The substrate further has an ejection element, preferably disposed as a resistor in the stack of thin-film layers. When energy is transferred from the ejection element to the fluid in the fluid chamber, fluid is ejected from the orifice opening. The fluid ejection device may have one or a plurality of fluid chambers and one or a plurality of frustums of a truncated polyhedral, truncated pyramidal, truncated conical or truncated triangular cross-sectional ridge structures defining openings from the second surface of the substrate to the fluid chambers.
摘要翻译：本发明是一种流体喷射装置，例如打印头，其具有基底，其具有与孔层相匹配的第一表面，优选地通过一叠薄膜层。孔口层限定与孔口或喷嘴连接的流体室。基板具有具有截头棱锥结构的第二表面; 多面体或三角形脊形，限定通过基底的开口到流体室。衬底还具有优选地设置在薄膜层堆叠中作为电阻器的喷射元件。当能量从喷射元件转移到流体室中的流体时，流体从孔口排出。流体喷射装置可以具有一个或多个流体室和一个或多个截头圆锥体，其截断的多面体，截头锥体，截头圆锥形或截头三角形横截面脊结构限定从衬底的第二表面到流体的开口房间。

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