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    • 1. 发明授权
    • Method and system for detecting metal contamination on a semiconductor wafer
    • 用于检测半导体晶片上的金属污染的方法和系统
    • US06759255B2
    • 2004-07-06
    • US09854177
    • 2001-05-10
    • Zhiwei XuArun SrivatsaAmin SamsavarThomas G MillerGreg HornerSteven Weinzierl
    • Zhiwei XuArun SrivatsaAmin SamsavarThomas G MillerGreg HornerSteven Weinzierl
    • H01I2166
    • G01N27/60G01N27/002H01L22/12H01L2924/0002H01L2924/00
    • A method to detect metal contamination on a semiconductor topography is provided. The semiconductor topography may include a semiconductor substrate or a dielectric material disposed upon a semiconductor substrate. The metal contamination may be driven into the semiconductor substrate by an annealing process. Alternatively, the annealing process may drive the metal contamination into the dielectric material. Subsequent to the annealing process, a charge may be deposited upon an upper surface of the semiconductor topography. An electrical property of the semiconductor topography may be measured. A characteristic of at least one type of metal contamination may be determined as a function of the electrical property of the semiconductor topography. The method may be used to determine a characteristic of one or more types of metal contamination on a portion of the semiconductor topography or the entire semiconductor topography. A system configured to detect metal contamination on a semiconductor topography is also provided. An oven may be incorporated into the system and may be used to anneal the semiconductor topography. The system may also include a device that may be configured to deposit a charge on an upper surface of the semiconductor topography. A sensor may also be included in the system. The sensor may use a non-contact work function technique to measure an electrical property of the semiconductor topography.
    • 提供了一种在半导体形貌上检测金属污染的方法。 半导体形貌可以包括设置在半导体衬底上的半导体衬底或电介质材料。 金属污染物可以通过退火工艺被驱入半导体衬底。 或者,退火过程可以将金属污染物驱动到电介质材料中。 在退火处理之后,可以在半导体形貌的上表面上沉积电荷。 可以测量半导体形貌的电性质。 至少一种类型的金属污染的特征可以被确定为半导体形貌的电性能的函数。 该方法可以用于确定半导体形貌的一部分或整个半导体形貌上的一种或多种类型的金属污染的特性。 还提供了一种用于检测半导体形貌上的金属污染的系统。 烘箱可以并入系统中,并且可以用于退火半导体形貌。 该系统还可以包括可被配置为在半导体形貌的上表面上沉积电荷的装置。 传感器也可以包括在系统中。 传感器可以使用非接触功函数技术来测量半导体形貌的电性质。