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1. 发明授权

US09129907B2 Onium-containing CMP compositions and methods of use thereof 有权
标题翻译：含鎓的CMP组合物及其使用方法
公开(公告)号：US09129907B2
公开(公告)日：2015-09-08
申请号：US11517909
申请日：2006-09-08
申请人： Michael L. White , Zhan Chen
发明人： Michael L. White , Zhan Chen
IPC分类号： H01L21/3105 , C09G1/02
CPC分类号： H01L21/31053 , C09G1/02
摘要： The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing semiconductor materials. The composition has a pH of about 5 or less and comprises colloidal silica, at least one onium compound selected from the group consisting of a phosphonium salt, a sulfonium salt, and a combination thereof, and an aqueous carrier therefor; A CMP method for polishing a surface of a semiconductor material utilizing the composition is also disclosed.
摘要翻译：本发明提供适用于抛光半导体材料的化学机械抛光（CMP）组合物。该组合物具有约5或更低的pH，并且包含胶体二氧化硅，至少一种选自鏻盐，锍盐及其组合的鎓化合物及其水性载体; 还公开了利用该组合物来研磨半导体材料的表面的CMP方法。

2. 发明授权

US08759216B2 Compositions and methods for polishing silicon nitride materials 有权
标题翻译：用于研磨氮化硅材料的组合物和方法
公开(公告)号：US08759216B2
公开(公告)日：2014-06-24
申请号：US11448205
申请日：2006-06-07
申请人： Jeffrey Dysard , Sriram Anjur , Timothy Johns , Zhan Chen
发明人： Jeffrey Dysard , Sriram Anjur , Timothy Johns , Zhan Chen
IPC分类号： H01L21/302 , H01L21/336 , C03C15/00 , C03C25/68
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/31053
摘要： The present invention provides a method for polishing silicon nitride-containing substrates. The method comprises abrading a surface of a silicon nitride substrate with a polishing composition, which comprises colloidal silica, at least one acidic component, and an aqueous carrier. The at least one acidic component has a pKa in the range of about 1 to 4.5. The composition has a pH in the range of about 0.5 pH units less than the pKa of the at least one acidic component to about 1.5 pH units greater than the pKa.
摘要翻译：本发明提供一种研磨含氮化硅的基板的方法。该方法包括用抛光组合物研磨氮化硅衬底的表面，抛光组合物包括胶体二氧化硅，至少一种酸性组分和水性载体。所述至少一种酸性组分的pKa在约1至4.5的范围内。所述组合物的pH值比所述至少一种酸性组分的pKa小约0.5pH单位至大于pKa约1.5pH单位。

3. 发明授权

US08247327B2 Methods and compositions for polishing silicon-containing substrates 有权
标题翻译：抛光含硅基材的方法和组合物
公开(公告)号：US08247327B2
公开(公告)日：2012-08-21
申请号：US12221023
申请日：2008-07-30
申请人： Francesco De Rege Thesauro , Zhan Chen
发明人： Francesco De Rege Thesauro , Zhan Chen
IPC分类号： H01L21/302
CPC分类号： C09K3/1463 , B24B37/044 , C09G1/02 , H01L21/31053 , H01L21/3212
摘要： The invention provides chemical-mechanical polishing (CMP) compositions and methods for polishing a silicon-containing substrate. A method of the invention comprises the steps of contacting a silicon-containing substrate with a polishing pad and an aqueous CMP composition, and causing relative motion between the polishing pad and the substrate while maintaining a portion of the CMP composition in contact with the surface of the substrate to abrade at least a portion of the substrate. The CMP composition comprises a ceria abrasive, a polishing additive bearing a functional group with a pKa of about 4 to about 9, a nonionic surfactant with an hydrophilic portion and a lipophilic portion wherein the hydrophilic portion has a number average molecular weight of about 500 g/mol or higher, and an aqueous carrier, wherein the pH of the composition is 7 or less. The method reduces defects on the wafers, particularly local areas of high removal. The method is also useful for polishing dielectric silicon-containing substrates at a high rate relative to semiconductor silicon-containing substrates.
摘要翻译：本发明提供用于抛光含硅基材的化学机械抛光（CMP）组合物和方法。本发明的方法包括以下步骤：使含硅衬底与抛光垫和水性CMP组合物接触，并且在保持CMP组合物的一部分与表面接触的同时引起抛光垫和衬底之间的相对运动所述衬底磨损所述衬底的至少一部分。 CMP组合物包括二氧化铈研磨剂，具有pKa约4至约9的官能团的抛光添加剂，具有亲水部分和亲油部分的非离子表面活性剂，其中亲水部分的数均分子量为约500g / mol以上，和水性载体，其中组合物的pH为7以下。该方法减少了晶片上的缺陷，特别是高去除的局部区域。该方法对于相对于含半导体硅的衬底以高速率抛光介电含硅衬底也是有用的。

4. 发明申请

US20080060278A1 Onium-containing CMP compositions and methods of use thereof 有权
标题翻译：含鎓的CMP组合物及其使用方法
公开(公告)号：US20080060278A1
公开(公告)日：2008-03-13
申请号：US11517909
申请日：2006-09-08
申请人： Michael L. White , Zhan Chen
发明人： Michael L. White , Zhan Chen
IPC分类号： B24D3/02 , C09K13/00 , C09K3/14 , B24B1/00
CPC分类号： H01L21/31053 , C09G1/02
摘要： The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing semiconductor materials. The composition has a pH of about 5 or less and comprises colloidal silica, at least one onium compound selected from the group consisting of a phosphonium salt, a sulfonium salt, and a combination thereof, and an aqueous carrier therefor; A CMP method for polishing a surface of a semiconductor material utilizing the composition is also disclosed.
摘要翻译：本发明提供适用于抛光半导体材料的化学机械抛光（CMP）组合物。该组合物具有约5或更低的pH，并且包含胶体二氧化硅，至少一种选自鏻盐，锍盐及其组合的鎓化合物及其水性载体; 还公开了利用该组合物来研磨半导体材料的表面的CMP方法。

5. 发明申请

US20150141600A1 METHOD FOR SYNTHESIZING HOMOPOLYMER N-VINYL BUTYROLACTAM WITH SUPER-LOW MOLECULAR WEIGHT AND SUPER-LOW RESIDUAL MONOMER 有权
标题翻译：用于合成具有超低分子量和超低残留单体的均聚物N-乙烯基丁二酰胺的方法
公开(公告)号：US20150141600A1
公开(公告)日：2015-05-21
申请号：US14401743
申请日：2012-07-23
申请人： Yu Wang , Wei Liu , Zhan Chen
发明人： Yu Wang , Wei Liu , Zhan Chen
IPC分类号： C08F24/00
CPC分类号： C08F24/00 , C08F4/38 , C08F6/003 , C08F126/06 , C08L39/04
摘要： The present invention relates to a synthesis method of ultra low molecular weight homopolymerized N-vinyl butyrolactam with ultra low residual monomer content, which comprises: using N-vinyl butyrolactam monomers and water with the mass ratio of 3:17˜8:12, then based on the N-vinyl butyrolactam monomers, using 0.5%˜5.0% by weight of initiators, 0.1%˜5.0% by weight of a catalyst, and 0.1%˜10% by weight of a molecular weight regulator; in the presence of an inert gas, adding the above mentioned raw materials in batches, adjusting the pH of the reaction system to 7.0-8.0 with an activator, reacting at the polymerization temperature of 60-85° C.; finally adding a peroxide and keeping the temperature for 2 hours, to obtain an aqueous solution of ultra low molecular weight homopolymerized N-vinyl butyrolactam, drying the aqueous solution to obtain a powdery ultra low molecular weight homopolymerized N-vinyl butyrolactam with ultra low residual monomer content, whose K value is 12-17, whose molecular weight is 2000-15000, and whose residual monomer content is less than 10 ppm, so the present invention is designed skillfully and simple in preparation, the residual monomer content of the ultra low molecular weight homopolymerized N-vinyl butyrolactam with ultra low residual monomer content prepared is less than 10 ppm, and the K value is 12-17, therefore the present invention is suitable for large-scale popularization.
摘要翻译：本发明涉及具有超低残留单体含量的超低分子量均聚N-乙烯基丁内酰胺的合成方法，其包括：使用N-乙烯基丁内酰胺单体和质量比为3：17〜8：12的水，然后基于N-乙烯基丁内酰胺单体，使用0.5重量％〜5.0重量％的引发剂，0.1重量％〜5.0重量％的催化剂和0.1重量％〜10重量％的分子量调节剂; 在惰性气体的存在下，分批加入上述原料，用活化剂将反应体系的pH调节至7.0-8.0，在聚合温度为60-85℃下反应; 最后加入过氧化物并保持温度2小时，得到超低分子量均聚N-乙烯基丁内酰胺水溶液，干燥该水溶液，得到具有超低残留单体的粉状超低分子量均聚N-乙烯基丁内酰胺其K值为12-17，分子量为2000-15000，残留单体含量小于10ppm，本发明设计巧妙简单，超低分子量的残留单体含量制备的超低残留单体含量的均聚的N-乙烯基丁内酰胺重量小于10ppm，K值为12-17，因此本发明适用于大规模普及。

6. 发明授权

US08597540B2 Compositions for polishing silicon-containing substrates 有权
标题翻译：用于抛光含硅基材的组合物
公开(公告)号：US08597540B2
公开(公告)日：2013-12-03
申请号：US13554829
申请日：2012-07-20
申请人： Francesco De Rege Thesauro , Zhan Chen
发明人： Francesco De Rege Thesauro , Zhan Chen
IPC分类号： C09K13/06
CPC分类号： C09K3/1463 , B24B37/044 , C09G1/02 , H01L21/31053 , H01L21/3212
摘要： The invention provides chemical-mechanical polishing (CMP) compositions and methods for polishing a silicon-containing substrate. A method of the invention comprises the steps of contacting a silicon-containing substrate with a polishing pad and an aqueous CMP composition, and causing relative motion between the polishing pad and the substrate while maintaining a portion of the CMP composition in contact with the surface of the substrate to abrade at least a portion of the substrate. The CMP composition comprises a ceria abrasive, a polishing additive bearing a functional group with a pKa of about 4 to about 9, a nonionic surfactant with an hydrophilic portion and a lipophilic portion wherein the hydrophilic portion has a number average molecular weight of about 500 g/mol or higher, and an aqueous carrier, wherein the pH of the composition is 7 or less. The method reduces defects on the wafers, particularly local areas of high removal. The method is also useful for polishing dielectric silicon-containing substrates at a high rate relative to semiconductor silicon-containing substrates.
摘要翻译：本发明提供用于抛光含硅基材的化学机械抛光（CMP）组合物和方法。本发明的方法包括以下步骤：使含硅衬底与抛光垫和水性CMP组合物接触，并且在保持CMP组合物的一部分与表面接触的同时引起抛光垫和衬底之间的相对运动所述衬底磨损所述衬底的至少一部分。 CMP组合物包括二氧化铈研磨剂，具有pKa约4至约9的官能团的抛光添加剂，具有亲水部分和亲油部分的非离子表面活性剂，其中亲水部分的数均分子量为约500g / mol以上，和水性载体，其中组合物的pH为7以下。该方法减少了晶片上的缺陷，特别是高去除的局部区域。该方法对于相对于含半导体硅的衬底以高速率抛光介电含硅衬底也是有用的。

7. 发明申请

US20110166857A1 Human Voice Distinguishing Method and Device 审中-公开
标题翻译：人声识别方法与设备
公开(公告)号：US20110166857A1
公开(公告)日：2011-07-07
申请号：US13001596
申请日：2009-09-15
申请人： Xiangyong Xie , Zhan Chen
发明人： Xiangyong Xie , Zhan Chen
IPC分类号： G10L15/00
CPC分类号： G10L25/78
摘要： A human voice distinguishing method and device are provided. The method involves: taking every n sampling points of the current frame of audio signals as one subsection, wherein n is a positive integer, judging whether two adjacent subsections have transition relative to a distinguishing threshold, wherein the sliding maximum absolute value of the two adjacent subsections is more and less than the distinguishing threshold respectively, if so, then determining the current frame to be human voice, where the sliding maximum absolute value of the subsection is obtained by the following method: taking the maximum value of absolute intensity of every sampling point in this subsection as the initial maximum absolute value of this subsection, and taking the maximum value of the initial maximum absolute value of this subsection and m subsections following this subsection as the sliding maximum absolute value of this subsection, wherein m is a positive integer.
摘要翻译：提供人声识别方法和装置。该方法包括：将音频信号当前帧的每n个采样点作为一个子部分，其中n是正整数，判断两个相邻子部分是否具有相对于一个区别阈值的转变，其中两个邻近的滑动最大绝对值如果是，则分节分别大于区别阈值，然后将当前帧确定为人声，其中通过以下方法获得子段的滑动最大绝对值：取每个采样的绝对强度的最大值指出本小节作为本款的初始最大绝对值，并将本小节的初始最大绝对值的最大值和本小节后面的m个小节作为本小节的滑动最大绝对值，其中m为正整数。

8. 发明申请

US20100190339A1 COMPOSITIONS AND METHODS FOR CHEMICAL-MECHANICAL POLISHING OF PHASE CHANGE MATERIALS 审中-公开
标题翻译：化学机械抛光相变材料的组合物和方法
公开(公告)号：US20100190339A1
公开(公告)日：2010-07-29
申请号：US12670495
申请日：2008-07-24
申请人： Zhan Chen , Kai Luo , Robert Vacassy
发明人： Zhan Chen , Kai Luo , Robert Vacassy
IPC分类号： H01L21/304 , C09K13/00
CPC分类号： C09G1/02 , B24B37/044 , C09K3/1463 , G11C13/0004 , H01L21/31053
摘要： The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a substrate comprising a phase change material (PCM), such as a germanium-antimony-tellurium (GST) alloy. The composition comprises a particulate abrasive material in combination with lysine, an optional oxidizing agent, and an aqueous carrier therefor. CMP methods for polishing a phase change material-containing substrate utilizing the composition are also disclosed.
摘要翻译：本发明提供了适用于抛光包括相变材料（PCM）的基材的化学机械抛光（CMP）组合物，例如锗 - 锑 - 碲（GST）合金。组合物包含与赖氨酸组合的颗粒磨料，任选的氧化剂及其水性载体。还公开了利用该组合物研磨含相变材料的衬底的CMP方法。

9. 发明授权

US06189132B1 Design rule correction system and method 失效
标题翻译：设计规则校正系统及方法
公开(公告)号：US06189132B1
公开(公告)日：2001-02-13
申请号：US09057961
申请日：1998-04-09
申请人： Fook-Luen Heng , Zhan Chen , Gustavo E. Tellez , John Cohn , Rani Narayan
发明人： Fook-Luen Heng , Zhan Chen , Gustavo E. Tellez , John Cohn , Rani Narayan
IPC分类号： G06F1750
CPC分类号： G06F17/5081
摘要： A method of modifying a layout of a plurality of objects in accordance with a plurality of predetermined criteria is presented. An objective function is defined for measuring a location perturbation and a separation perturbation of the objects in the layout. A linear system is defined using linear constraints in terms of design rules and the objective function to describe separations between layout objects. The linear system is solved to simultaneously remove violations of the design rules, and shapes and positions of objects in the layout are modified in accordance with the solution of the linear system such that a total perturbation of the objects in the layout is reduced. A system for implementing the present invention is also presented.
摘要翻译：呈现了根据多个预定标准修改多个对象的布局的方法。定义了一个目标函数，用于测量布局中对象的位置扰动和分离扰动。使用线性约束在设计规则和用于描述布局对象之间的分离的目标函数方面定义线性系统。解决线性系统以同时消除违反设计规则的情况，并且根据线性系统的解决方案来修改布局中对象的形状和位置，使得布局中的对象的总扰动减小。还提出了用于实现本发明的系统。

10. 发明申请

US20080220610A1 Silicon oxide polishing method utilizing colloidal silica 审中-公开
标题翻译：使用胶体二氧化硅的氧化硅抛光方法
公开(公告)号：US20080220610A1
公开(公告)日：2008-09-11
申请号：US11478004
申请日：2006-06-29
申请人： Benjamin Bayer , Zhan Chen , Jeffrey P. Chamberlain , Robert Vacassy
发明人： Benjamin Bayer , Zhan Chen , Jeffrey P. Chamberlain , Robert Vacassy
IPC分类号： H01L21/306
CPC分类号： H01L21/31053 , C09G1/02 , H01L21/3212
摘要： The inventive method comprises chemically-mechanically polishing a substrate with a polishing composition comprising a liquid carrier and sol-gel colloidal silica abrasive particles.
摘要翻译：本发明的方法包括用包含液体载体和溶胶 - 凝胶胶态二氧化硅磨料颗粒的抛光组合物对衬底进行化学机械抛光。

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