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    • 2. 发明授权
    • Shutter valve and device for generating energy from sea waves comprising such valves
    • US10145353B2
    • 2018-12-04
    • US15315475
    • 2015-06-02
    • Zakaria Khalil Ibrahim DolehJohn Lock
    • Zakaria Khalil Ibrahim DolehJohn Lock
    • F16K1/22F03B13/18F03B13/20F16K31/54F16K31/163
    • A shutter valve for alternatingly allowing and stopping a high pressure water flow, such as in a device for generating energy from sea waves, comprising a tube section (201) having a rectangular cross section, wherein a multitude of vanes (202) are rotatably mounted in the tube section (201), wherein the vanes have a relatively large rectangular longitudinal cross section in a first direction, a relatively flat rectangular longitudinal cross section in a second direction perpendicular to said first direction, and a generally flat cross section in a third direction perpendicular to said first and second directions, said third direction being the axis of the vane (202), wherein the circumferential wall around the axis of each vane forms a closed water impermeable surface, wherein the axes of said multitude of vanes all extend in a parallel manner, characterized in that the distances between the axes of adjacent vanes are approximately half the distance between the outer tips of the vanes, seen in the cross section in said third direction, such that when the vanes are rotated to the closed position the lower half of the front surfaces and upper half of the back surfaces of all vanes form a single closed front surface and a single closed back surface, each in substantially a single flat plane perpendicular to the flow axis of the valve, said surfaces closing the opening of said tube section, and the other half of said front surfaces and the other half of said back surfaces of said vanes rest against each other.
    • 7. 发明授权
    • Oxidative chemical vapor deposition of electrically conductive and electrochromic polymers
    • 导电和电致变色聚合物的氧化化学气相沉积
    • US07618680B2
    • 2009-11-17
    • US11141353
    • 2005-05-31
    • Karen K. GleasonJohn Lock
    • Karen K. GleasonJohn Lock
    • C23C16/00
    • B05D1/60B05D5/12G02F2001/1515H01L51/0037
    • Remarkably, disclosed herein is a solvent-less chemical vapor deposition (CVD) method for the oxidative polymerization and deposition of thin films of electrically-conducting polymers. In a preferred embodiment, the method provides poly-3,4-ethylenedioxythiophene (PEDOT) thin films. In other embodiments, the method is applicable to polymerization to give other conducting polymers, such as polyanilines, polypyrroles, polythiophenes and their derivatives. The all-vapor technique uses a moderate substrate temperature, making it compatible with a range of materials, including as fabric and paper. In addition, this method allows for the coating of high surface-area substrates with fibrous, porous and/or particulate morphologies. The coated substrates may be used in organic semiconductor devices, including organic light-emitting diodes (OLEDs), photovoltaics, electrochromics, and supercapacitors.
    • 值得注意的是,这里公开的是用于氧化聚合和沉积导电聚合物薄膜的无溶剂化学气相沉积(CVD)方法。 在优选的实施方案中,该方法提供了聚-3,4-亚乙基二氧噻吩(PEDOT)薄膜。 在其它实施方案中,该方法适用于聚合以产生其它导电聚合物,例如聚苯胺,聚吡咯,聚噻吩及其衍生物。 全蒸汽技术使用适度的基材温度,使其与一系列材料(包括织物和纸)兼容。 此外,该方法允许用纤维,多孔和/或颗粒形态涂覆高表面积基材。 涂覆的基材可以用于有机半导体器件,包括有机发光二极管(OLED),光伏,电致变色和超级电容器。