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    • 10. 发明申请
    • Semiconductor light emitting device
    • 半导体发光器件
    • US20050040406A1
    • 2005-02-24
    • US10889409
    • 2004-07-12
    • Daisuke Nakagawa
    • Daisuke Nakagawa
    • H01L27/15H01L33/06H01L33/32H01L33/42H01S5/323H01S5/343
    • H01L33/32B82Y20/00H01L33/04
    • In a gallium nitride compound semiconductor, making small the thickness of a metal electrode layer in order to enhance the efficiency of taking light out relatively increases the resistance value of the metal electrode layer as measured in a direction that is parallel with this layer compared to that of it in a direction that is vertical with respect thereto. As a result of this, when a voltage has been applied across relevant electrodes, electric current ceases to be sufficiently supplied to the entire metal electrode layer. The semiconductor light emitting device of the invention is equipped, between the metal electrode layer and an active layer, with a superlattice layer for enhancing the efficiency of taking out the light that has been emitted in the active layer.
    • 在氮化镓化合物半导体中,为了提高取出光的效率,使金属电极层的厚度变小,相比于与该层平行的方向测定的金属电极层的电阻值相对地增加 在相对于其垂直的方向上。 结果,当跨相关电极施加电压时,电流不再充分地供应到整个金属电极层。 本发明的半导体发光器件在金属电极层和有源层之间配置有超晶格层,用于提高取出在有源层中发射的光的效率。