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    • 9. 发明申请
    • EPOXY COMPOUND, CURABLE COMPOSITION, AND CURED PRODUCT THEREOF
    • 环氧化合物,可固化组合物及其固化产品
    • US20130144030A1
    • 2013-06-06
    • US13816084
    • 2011-08-03
    • Yutaka Satou
    • Yutaka Satou
    • C07D303/30
    • C07D303/30C08G59/245C08G59/3218C08G59/621C08L63/00
    • A problem to be solved by the invention is to provide a novel epoxy resin exhibiting excellent performance with respect to heat resistance and low thermal expansibility of a cured product, a curable composition using the same, and a cured product having excellent heat resistance and low thermal expansibility. The curable composition contains an epoxy compound and a curing agent as essential components, a calixarene-type novel epoxy compound being used as the epoxy compound. The novel epoxy compound has a resin structure represented by structural formula 1 below (in the formula, R1s each independently represent a hydrogen atom, an alkyl group, or an alkoxy group, and n is a repeat unit and an integer of 2 to 10).
    • 本发明要解决的问题是提供一种新型环氧树脂,其在耐热性和固化产物的热膨胀性低的情况下表现出优异的性能,使用其的可固化组合物和具有优异耐热性和低热性的固化产物 可扩展性。 固化性组合物含有作为必要成分的环氧化合物和固化剂,作为环氧化合物使用的杯芳烃型新型环氧化合物。 新型环氧化合物具有下述结构式1所示的树脂结构(式中,R 1各自独立地表示氢原子,烷基或烷氧基,n为重复单元,2〜10的整数) 。
    • 10. 发明授权
    • Semiconductor memory device
    • 半导体存储器件
    • US07835188B2
    • 2010-11-16
    • US12361620
    • 2009-01-29
    • Yutaka SatouFumiyasu UtsunomiyaTomohiro Oka
    • Yutaka SatouFumiyasu UtsunomiyaTomohiro Oka
    • G11C16/00
    • G11C29/50G11C16/04G11C29/50004
    • Provided is a semiconductor memory device, which realizes characteristic evaluation even in a case where a threshold voltage is a negative potential by a test method which is similar to a case of a positive potential. The semiconductor memory device includes a plurality of memory cells for storing data. When a test signal is input, the semiconductor memory device changes from a normal mode to a test mode for evaluating characteristics of the plurality of memory cells. The semiconductor memory device also includes: a memory cell selecting portion for selecting a memory cell; a constant voltage portion for generating a reference voltage; a constant current portion for generating a reference current; an X switch voltage switching control circuit for supplying one of an X selection signal and a voltage signal input from an external terminal to a gate of the memory cell; a Y switch portion for supplying the reference current to a drain of the memory cell selected by a Y selection signal; a comparator for detecting whether or not a drain voltage that is a voltage of the drain has exceeded the reference voltage; and a decision level changing portion for adjusting a current value of the reference current and a voltage value of the reference voltage so as to change a decision level of the comparator based on a control signal in the test mode.
    • 提供一种半导体存储器件,即使在通过与正电位的情况相似的测试方法的阈值电压为负电位的情况下也实现特性评估。 半导体存储器件包括用于存储数据的多个存储单元。 当输入测试信号时,半导体存储器件从正常模式改变为用于评估多个存储器单元的特性的测试模式。 半导体存储装置还包括:存储单元选择部,用于选择存储单元; 用于产生参考电压的恒定电压部分; 用于产生参考电流的恒定电流部分; X开关电压切换控制电路,用于将X选择信号和从外部端子输入的电压信号中的一个提供给存储器单元的栅极; Y开关部分,用于将参考电流提供给由Y选择信号选择的存储器单元的漏极; 用于检测作为所述漏极的电压的漏极电压是否超过所述参考电压的比较器; 以及判定电平改变部分,用于调整参考电流的当前值和参考电压的电压值,以便基于测试模式中的控制信号来改变比较器的判定电平。