专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5209811A Method for heat-treating gallium arsenide monocrystals 失效
标题翻译：砷化镓单晶的热处理方法
公开(公告)号：US5209811A
公开(公告)日：1993-05-11
申请号：US810362
申请日：1991-12-18
申请人： Yutaka Kitagawara , Susumu Kuwahara , Takao Takenaka
发明人： Yutaka Kitagawara , Susumu Kuwahara , Takao Takenaka
IPC分类号： C30B33/00
CPC分类号： C30B33/00 , C30B29/42
摘要： A heat-treating method for an indium-doped dislocation-free gallium arsenide monocrystal having a low carbon concentration and grown in the Liquid Encapsulated Czochralski method, comprising a two-step heat treatment:(i) heating the monocrystal at a temperature between 1050.degree. C. and 1200.degree. C. for a predetermined time length, and cooling the monocrystal quickly; and(ii) heating the monocrystal at a temperature between 750.degree. C. and 950.degree. C. for a predetermined time length, and cooling the monocrystal quickly.
摘要翻译：一种具有低碳浓度的铟掺杂的无位错的砷化镓单晶的热处理方法，其在液体封装的切克劳斯基法中生长，包括两步热处理：（i）在1050℃之间的温度下加热单晶 C.和1200℃预定的时间长度，并快速冷却单晶; 和（ii）在750℃至950℃的温度下加热单晶体预定的时间长度，并快速冷却单晶。

2. 发明授权

US5228927A Method for heat-treating gallium arsenide monocrystals 失效
公开(公告)号：US5228927A
公开(公告)日：1993-07-20
申请号：US677036
申请日：1991-03-29
申请人： Yutaka Kitagawara , Susumu Kuwahara , Takao Takenaka
发明人： Yutaka Kitagawara , Susumu Kuwahara , Takao Takenaka
IPC分类号： C30B33/00
CPC分类号： C30B33/00 , C30B29/42 , Y10S148/003 , Y10S148/024 , Y10S148/056
摘要： A heat-treating method for an indium-doped dislocation-free gallium arsenide monocrystal having a low carbon concentration and grown in the Liquid Encapsulated Czochralski method, comprising a two-step heat treatment:(i) heating the monocrystal at a temperature between 1050.degree. C. and 1200.degree. C. for a predetermined time length, and cooling the monocrystal quickly; and(ii) heating the monocrystal at a temperature between 750.degree. C. and 950.degree. C. for a predetermined time length, and cooling the monocrystal quickly.

3. 发明授权

US5612539A Method of evaluating lifetime related quality of semiconductor surface 失效
标题翻译：评估半导体表面寿命相关质量的方法
公开(公告)号：US5612539A
公开(公告)日：1997-03-18
申请号：US557563
申请日：1995-11-14
申请人： Ryoji Hoshi , Yutaka Kitagawara , Takao Takenaka
发明人： Ryoji Hoshi , Yutaka Kitagawara , Takao Takenaka
IPC分类号： G01N21/63 , G01N21/66 , G01R31/26 , H01L21/66 , G01R31/265
CPC分类号： G01R31/2607 , G01N21/6489 , H01L22/14
摘要： A lifetime related quality evaluation method, used with a semiconductor wafer having a semiconductor thin layer over the main surface of a semiconductor substrate, for evaluating the lifetime related quality of the semiconductor thin layer and/or the vicinity thereof, characterized by: generating electron-hole pairs in the vicinity of a surface of the semiconductor thin layer by the use of excitation light having a larger energy than the band gap of a semiconductor to be tested; then detecting the intensity at a particular wavelength of light emitted by recombination of the electron-hole pairs; and evaluating the lifetime related quality of the semiconductor thin layer and/or the vicinity thereof based on the detected intensity. The lifetime related quality evaluation method realizes a non-contact, non-destructive quality evaluation of the epitaxial semiconductor wafer.
摘要翻译：一种寿命相关的质量评估方法，用于在半导体衬底的主表面上具有半导体薄层的半导体晶片，用于评估半导体薄层的寿命相关质量和/或其附近，其特征在于：通过使用具有比待测半导体的带隙大的能量的激发光，在半导体薄层的表面附近的空穴对; 然后检测由电子 - 空穴对的复合发射的光的特定波长处的强度; 以及基于检测到的强度来评估半导体薄层和/或其附近的寿命相关质量。寿命相关的质量评估方法实现了外延半导体晶片的非接触，非破坏性的质量评估。

4. 发明授权

US5533387A Method of evaluating silicon wafers 失效
标题翻译：评估硅片的方法
公开(公告)号：US5533387A
公开(公告)日：1996-07-09
申请号：US528007
申请日：1995-09-14
申请人： Ken Aihara , Yutaka Kitagawara , Takao Takenaka
发明人： Ken Aihara , Yutaka Kitagawara , Takao Takenaka
IPC分类号： H01L21/66 , G01B7/34 , G01B11/24 , G01Q30/08 , G01Q30/20 , G01Q60/24
CPC分类号： G01Q30/04 , B82Y35/00 , G01B7/34 , Y10S977/854
摘要： The height x.sub.i (i=1, 2, . . . , N) of a plurality of measuring points on a silicon wafer from a reference plane is measured by means of an AFM (atomic force microscope), the autocorrelation function R.sub.j represented by the equation below is determined: ##EQU1## Where x denotes: ##EQU2## is determined, an arbitrary number of autocorrelation function R.sub.j with large value from said autocorrelation function R.sub.j are selected, and the microroughness on said silicon wafer is analyzed based on the distances between the point R.sub.j=0 and said selected points R.sub.j 's with large value except for R.sub.j=0.
摘要翻译：通过AFM（原子力显微镜）测量硅晶片上的多个测量点与参考平面的高度xi（i = 1,2，...，N），由相关的自相关函数Rj 确定下式：确定，选择具有来自所述自相关函数Rj的大值的任意数量的自相关函数Rj，并且基于点Rj = 0与所选择的点Rj的距离来分析所述硅晶片上的微粗糙度除了Rj = 0，其值很大。

5. 发明授权

US5302832A Method for evaluation of spatial distribution of deep level concentration in semiconductor crystal 失效
标题翻译：半导体晶体深层次浓度空间分布评价方法
公开(公告)号：US5302832A
公开(公告)日：1994-04-12
申请号：US950677
申请日：1992-09-25
申请人： Yutaka Kitagawara , Ryoji Hoshi , Takao Takenaka
发明人： Yutaka Kitagawara , Ryoji Hoshi , Takao Takenaka
IPC分类号： G01N21/64 , H01L21/66 , G01N21/63
CPC分类号： G01N21/6489
摘要： Spatial distribution of deep level concentration near the surface of a semiconductor wafer is evaluated quickly and accurately by a method which comprises at least a step of scanning the surface of the semiconductor wafer in the X and Y direction with a laser beam for carrier excitation from a laster beam source in accordance with the room-temperature photoluminescence (PL) process thereby measuring the wafer map (M.sub.D) of deep level PL intensity (I.sub.D) and wafer map (M.sub.B) of band edge PL intensity (I.sub.B) in the semiconductor wafer and a step of dividing the wafer map (M.sub.D) of PL intensity (I.sub.D) by the .nu.'th power of the wafer map (M.sub.B) of PL intensity (I.sub.B) {the magnitude of the .nu.'th power presenting the numerical value obtained by empirically confirming the dependence of the band edge PL intensity (I.sub.B) on the power of the excitation laster mean} thereby determining the spatial distribution (M.sub.N) of the relative value of deep level concentration (N.sub.D) and performing the evaluation of the distribution of relative deep level concentration on the basis of the spatial distribution (M.sub.N) of the relative deep level concentration (N.sub.D).
摘要翻译：通过一种方法来快速准确地评估半导体晶片表面附近的深度浓度的空间分布，该方法至少包括用X轴和Y方向的半导体晶片的表面用激光束从载体激发扫描根据室温光致发光（PL）工艺，由此测量半导体晶片中的带边PL强度（IB）的深层PL强度（ID）和晶片图（MB）的晶片图（MD），以及将PL强度（ID）的晶片图（MD）除以PL强度（IB）的晶片图（MB）的（ny）'功率（第（ny））次的幅度通过经验性地确认带边缘PL强度（IB）对激发灯的平均值的功率的依赖性获得的数值，从而确定深层次浓度（ND）的相对值的空间分布（MN），并执行这个地区在相对深层次浓度（ND）的空间分布（MN）的基础上贡献相对深层次浓度。

6. 发明授权

US5386118A Method and apparatus for determination of interstitial oxygen concentration in silicon single crystal 失效
标题翻译：测定硅单晶间隙氧浓度的方法和装置
公开(公告)号：US5386118A
公开(公告)日：1995-01-31
申请号：US38694
申请日：1993-03-29
申请人： Yutaka Kitagawara , Hiroshi Kubota , Masaro Tamatsuka , Takao Takenaka , Kazuhisa Takamizawa
发明人： Yutaka Kitagawara , Hiroshi Kubota , Masaro Tamatsuka , Takao Takenaka , Kazuhisa Takamizawa
IPC分类号： C30B33/00 , G01N21/35
CPC分类号： C30B29/06 , C30B33/00 , G01N21/35 , G01N21/3563 , G01N2021/3595
摘要： A method and apparatus disclosed by this invention allows determination of the interstitial oxygen concentration in a silicon single crystal to be effected stably and accurately without being appreciably affected by change of the temperature of a sample under test. The interstitial oxygen concentration in the silicon single crystal is determined on the basis of the value of:(Light absorption coefficient).times.[1+a.times.(peak half width)]or the value of:(Light absorption coefficient).times.[1+b.times.(peak area)/ (peak height)](wherein a or b stands for a parameter whose value depends on the conditions for determination or the apparatus for determination and should be empirically fixed with respect to specific conditions of determination or the apparatus used therefor) concerning an interstitial oxygen absorption peak at 1106 cm.sup.-1 obtained by means of an infrared spectrophotometer.
摘要翻译：通过本发明公开的方法和装置允许稳定且准确地实现硅单晶中的间隙氧浓度的确定，而不受显着受试验样品的温度变化的影响。基于以下的值确定硅单晶中的间隙氧浓度：（光吸收系数）×[1 + ax（峰值半峰值）]或者：（光吸收系数）×[1 + bx （峰面积）/（峰高）]（其中a或b表示其值取决于确定条件的参数或用于确定的装置，并且应根据具体的确定条件或其使用的装置经验地确定）涉及通过红外分光光度计获得的在1106cm -1处的间隙氧吸收峰。

7. 发明授权

US5841532A Method for evaluating oxygen concentrating in semiconductor silicon single crystal 失效
标题翻译：半导体硅单晶氧浓缩评估方法
公开(公告)号：US5841532A
公开(公告)日：1998-11-24
申请号：US800393
申请日：1997-02-14
申请人： Tomosuke Yoshida , Yutaka Kitagawara
发明人： Tomosuke Yoshida , Yutaka Kitagawara
IPC分类号： G01N21/64 , H01L21/66
CPC分类号： G01N21/6489
摘要： A method and apparatus for evaluating an oxygen concentration in a semiconductor silicon single crystal highly doped with boron at a low cost with a high sensitivity and high reproducibility. The single crystal, which is doped with boron of a high concentration of 10.sup.17 atoms/cm.sup.3 or higher, is irradiated with a light having a greater energy than that of bandgap of the semiconductor silicon while holding the single crystal at a temperature of room temperature to 50 K and photoluminescence intensities in the vicinity of a photon energy of 0.96 eV of a photoluminescence spectrum emitted from the single crystal under the above irradiation are measured to evaluate an oxygen concentration in the single crystal.
摘要翻译：一种以高灵敏度和高再现性以低成本高度掺杂硼的半导体硅单晶中的氧浓度的评价方法和装置。将具有1017原子/ cm3以上的高浓度的硼掺杂的单晶用能量比半导体硅的带隙大的能量照射，同时将单晶保持在室温至测量在上述照射下从单晶发射的光致发光光谱在0.96eV的光子能量附近的光致发光强度，以评价单晶中的氧浓度。

8. 发明授权

US07718446B2 Evaluation method for crystal defect in silicon single crystal wafer 有权
标题翻译：硅单晶晶体缺陷评估方法
公开(公告)号：US07718446B2
公开(公告)日：2010-05-18
申请号：US11883184
申请日：2006-01-23
申请人： Hisayuki Saito , Yutaka Kitagawara
发明人： Hisayuki Saito , Yutaka Kitagawara
IPC分类号： H01L21/00 , H01L21/66
CPC分类号： G01N21/47 , G01N21/896 , G01N21/9501 , G01N21/9505 , G01N2021/4707 , G01N2021/4735 , G01N2021/8477 , G01N2021/8965 , H01L22/24
摘要： The present invention provides an evaluation method for a crystal defect in a silicon single crystal wafer based on an infrared laser scattering tomograph method, wherein at least, the silicon single crystal wafer is irradiated with a laser beam, and light that enters the silicon single crystal wafer is scattered by a crystal defect, and the scattered light is detected to evaluate a Direct Surface Oxide Defect (DSOD) and a void defect smaller than the DSOD in the silicon single crystal wafer. As a result, the evaluation method for a crystal defect in a silicon single crystal wafer that can simply and precisely evaluate, e.g., a small DSOD, which can be conventionally evaluated based on a Cu deposition method alone, without requiring a wasteful cost.
摘要翻译：本发明提供一种基于红外激光散射断层摄影法的硅单晶晶片的晶体缺陷的评价方法，其中，至少使用激光束照射硅单晶晶片，并且进入硅单晶的光晶片被晶体缺陷散射，并且检测散射光以评估直接表面氧化物缺陷（DSOD）和小于硅单晶晶片中的DSOD的空隙缺陷。结果，可以简单而精确地评估例如小型DSOD的硅单晶晶片中的晶体缺陷的评估方法，其可以单独地基于Cu沉积方法进行常规评估，而不需要浪费的成本。

9. 发明授权

US5444246A Determining carbon concentration in silicon single crystal by FT-IR 失效
标题翻译：通过FT-IR测定硅单晶中的碳浓度
公开(公告)号：US5444246A
公开(公告)日：1995-08-22
申请号：US127522
申请日：1993-09-28
申请人： Yutaka Kitagawara , Hiroshi Kubota , Masaro Tamatsuka
发明人： Yutaka Kitagawara , Hiroshi Kubota , Masaro Tamatsuka
IPC分类号： G01N21/35
CPC分类号： G01N21/3563 , G01N2021/3568 , G01N2021/3595
摘要： The substitutional carbon concentration in a silicon single crystal is determined by determining by FT-IR the infrared absorbance spectrum using as a reference a substantially carbon-free silicon single crystal having substantially the same degree of free carrier absorption and produced by the same process as the sample. A subtraction factor used in the determination is calculated from the infrared absorbance spectra of the sample and the reference. A subtraction spectrum indicating the difference between the sample and the reference at the relevant wave number for carbon is computed, and the carbon concentration in the sample is determined from the distance of the absorption peak of the subtraction spectrum of the localized vibration of substitutional carbon in the sample from a base line of the subtraction spectrum. An FT-IR carbon concentration determination apparatus embodying the method is also disclosed.
摘要翻译：通过FT-IR测定红外吸收光谱来确定硅单晶中的取代碳浓度，使用基本上无碳的硅单晶，其基本上具有相同的游离载体吸收程度，并且通过与样品。用于测定的减法因子是从样品的红外吸收光谱和参考值计算的。计算指示样品与碳相关波数的参考值之间的差异的减法谱，样品中的碳浓度由取代碳的局部振动的减法谱的吸收峰的距离确定来自相减光谱基线的样本。还公开了体现该方法的FT-IR碳浓度测定装置。

10. 发明申请

US20080153186A1 Evaluation Method for Crystal Defect in Silicon Single Crystal Wafer 有权
标题翻译：硅单晶硅晶体缺陷评估方法
公开(公告)号：US20080153186A1
公开(公告)日：2008-06-26
申请号：US11883184
申请日：2006-01-23
申请人： Hisayuki Saito , Yutaka Kitagawara
发明人： Hisayuki Saito , Yutaka Kitagawara
IPC分类号： H01L21/66
CPC分类号： G01N21/47 , G01N21/896 , G01N21/9501 , G01N21/9505 , G01N2021/4707 , G01N2021/4735 , G01N2021/8477 , G01N2021/8965 , H01L22/24
摘要： The present invention provides an evaluation method for a crystal defect in a silicon single crystal wafer based on an infrared laser scattering tomograph method, wherein at least, the silicon single crystal wafer is irradiated with a laser beam, and light that enters the silicon single crystal wafer is scattered by a crystal defect, and the scattered light is detected to evaluate a Direct Surface Oxide Defect (DSOD) and a void defect smaller than the DSOD in the silicon single crystal wafer. As a result, the evaluation method for a crystal defect in a silicon single crystal wafer that can simply and precisely evaluate, e.g., a small DSOD, which can be conventionally evaluated based on a Cu deposition method alone, without requiring a wasteful cost.
摘要翻译：本发明提供一种基于红外激光散射断层摄影法的硅单晶晶片的晶体缺陷的评价方法，其中，至少使用激光束照射硅单晶晶片，并且进入硅单晶的光晶片被晶体缺陷散射，并且检测散射光以评估直接表面氧化物缺陷（DSOD）和小于硅单晶晶片中的DSOD的空隙缺陷。结果，可以简单而精确地评估例如小型DSOD的硅单晶晶片中的晶体缺陷的评估方法，其可以单独地基于Cu沉积方法进行常规评估，而不需要浪费的成本。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式