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1. 发明申请

US20150069552A1 MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE MAGNETIC MEMORY DEVICE 有权
标题翻译：磁记忆体装置及其制造方法
公开(公告)号：US20150069552A1
公开(公告)日：2015-03-12
申请号：US14200894
申请日：2014-03-07
申请人： Yutaka HASHIMOTO , Tadashi KAI , Masahiko NAKAYAMA , Hiroaki YODA , Toshihiko NAGASE , Masatoshi YOSHIKAWA , Yasuyuki SONODA
发明人： Yutaka HASHIMOTO , Tadashi KAI , Masahiko NAKAYAMA , Hiroaki YODA , Toshihiko NAGASE , Masatoshi YOSHIKAWA , Yasuyuki SONODA
IPC分类号： H01L43/02 , H01L43/12
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： According to one embodiment, a magnetic memory device includes a magnetoresistance effect element having a structure in which a first magnetic layer, a nonmagnetic layer, a second magnetic layer, and a third magnetic layer are stacked, wherein the third magnetic layer comprises a first region and a plurality of second regions, and each of the second regions is surrounded by the first region, has conductivity, and has a greater magnetic property than the first region.
摘要翻译：根据一个实施例，磁存储器件包括具有其中堆叠第一磁性层，非磁性层，第二磁性层和第三磁性层的结构的磁阻效应元件，其中第三磁性层包括第一区域和多个第二区域，并且每个第二区域被第一区域包围，具有导电性，并且具有比第一区域更大的磁特性。

2. 发明申请

US20150069554A1 MAGNETIC MEMORY AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：磁记忆及其制造方法
公开(公告)号：US20150069554A1
公开(公告)日：2015-03-12
申请号：US14201263
申请日：2014-03-07
申请人： Masahiko NAKAYAMA , Yasuyuki SONODA , Hiroaki YODA , Makoto NAGAMINE , Masatoshi YOSHIKAWA , Masaru TOKO , Tadashi KAI , Daisuke WATANABE , Youngmin EEH , Koji UEDA , Kazuya SAWADA , Toshihiko NAGASE
发明人： Masahiko NAKAYAMA , Yasuyuki SONODA , Hiroaki YODA , Makoto NAGAMINE , Masatoshi YOSHIKAWA , Masaru TOKO , Tadashi KAI , Daisuke WATANABE , Youngmin EEH , Koji UEDA , Kazuya SAWADA , Toshihiko NAGASE
IPC分类号： H01L43/02 , H01L43/12
CPC分类号： H01L43/08 , H01L27/228 , H01L43/02 , H01L43/12
摘要： According to one embodiment, a magnetic memory is disclosed. The memory includes a conductive layer containing a first metallic material, a stacked body formed above the conductive layer and including a first magnetic layer containing a second metallic material, a second magnetic layer, and a tunnel barrier layer formed between the first magnetic layer and the second magnetic layer, and an insulating layer formed on a side face of the stacked body and containing an oxide of the first metallic material. A standard electrode potential of the first metallic material is lower than the standard electrode potential of the second metallic material.
摘要翻译：根据一个实施例，公开了一种磁存储器。存储器包括含有第一金属材料的导电层，形成在导电层之上的层叠体，并且包括形成在第一磁性层和第二磁性层之间的包含第二金属材料的第一磁性层，第二磁性层和隧道势垒层第二磁性层和形成在层叠体的侧面上并且包含第一金属材料的氧化物的绝缘层。第一金属材料的标准电极电位低于第二金属材料的标准电极电位。

3. 发明申请

US20150263273A1 MAGNETIC MEMORY HAVING MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT 有权
标题翻译：具有磁性元件的磁记忆和制造磁性元件的方法
公开(公告)号：US20150263273A1
公开(公告)日：2015-09-17
申请号：US14479180
申请日：2014-09-05
申请人： Masatoshi YOSHIKAWA , Yasuyuki SONODA , Satoshi SETO , Shuichi TSUBATA , Kazuhiro TOMIOKA
发明人： Masatoshi YOSHIKAWA , Yasuyuki SONODA , Satoshi SETO , Shuichi TSUBATA , Kazuhiro TOMIOKA
IPC分类号： H01L43/12 , H01L43/02 , H01L27/22
CPC分类号： H01L43/12 , H01L27/228 , H01L43/02 , H01L43/08
摘要： According to one embodiment, a magnetic memory includes a transistor having first and second diffusion layers in a semiconductor substrate and a gate electrode between the first and second diffusion layers, a first insulating layer on the semiconductor substrate, the first insulating layer covering the transistor, a first contact plug in the first insulating layer, the first contact plug connected to the first diffusion layer, a second contact plug in the first insulating layer, the second contact plug connected to the second diffusion layer, a magnetoresistive element on the first insulating layer, the magnetoresistive element connected to the first contact plug, an electrode on the magnetoresistive element, and an impurity region in the first insulating layer, the second contact plug, and the electrode.
摘要翻译：根据一个实施例，磁存储器包括在半导体衬底中具有第一和第二扩散层的晶体管和位于第一和第二扩散层之间的栅电极，半导体衬底上的第一绝缘层，覆盖晶体管的第一绝缘层，第一绝缘层中的第一接触插塞，连接到第一扩散层的第一接触插塞，第一绝缘层中的第二接触插塞，连接到第二扩散层的第二接触插塞，第一绝缘层上的磁阻元件连接到第一接触插塞的磁阻元件，磁阻元件上的电极以及第一绝缘层，第二接触插塞和电极中的杂质区域。

4. 发明申请

US20160087004A1 MAGNETIC MEMORY AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：磁记忆及其制造方法
公开(公告)号：US20160087004A1
公开(公告)日：2016-03-24
申请号：US14635920
申请日：2015-03-02
申请人： Yasuyuki SONODA , Min Suk LEE , Ji Hwan HWANG , Chang Hyup SHIN , Masatoshi YOSHIKAWA
发明人： Yasuyuki SONODA , Min Suk LEE , Ji Hwan HWANG , Chang Hyup SHIN , Masatoshi YOSHIKAWA
IPC分类号： H01L27/22 , G11C11/16 , H01L43/12 , H01L43/02 , H01L43/08
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08 , H01L43/12
摘要： According to one embodiment, a magnetic memory includes a magnetic element, and a metal layer stacked on the magnetic element. H/D>1.47 is satisfied, where H denotes a sum of thicknesses of the magnetic element and the metal layer in a first direction in which the magnetic element and the metal layer are stacked, and D denotes a width of the magnetic element in a second direction perpendicular to the first direction.
摘要翻译：根据一个实施例，磁存储器包括磁性元件和堆叠在磁性元件上的金属层。 H / D> 1.47，其中H表示在磁性元件和金属层堆叠的第一方向上的磁性元件和金属层的厚度之和，D表示磁性元件和金属层的宽度第二方向垂直于第一方向。

5. 发明申请

US20120112297A1 MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：磁性随机存取存储器及其制造方法
公开(公告)号：US20120112297A1
公开(公告)日：2012-05-10
申请号：US13049806
申请日：2011-03-16
申请人： Koji YAMAKAWA , Katsuaki NATORI , Daisuke IKENO , Yasuyuki SONODA
发明人： Koji YAMAKAWA , Katsuaki NATORI , Daisuke IKENO , Yasuyuki SONODA
IPC分类号： H01L29/82 , H01L21/8246
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08 , H01L43/12
摘要： According to one embodiment, a magnetic random access memory including a magneto resistive element, including a free layer including first metal atoms, a first metal layer on the free layer and including a first metal, a first interfacial magnetic layer on the first metal layer, a nonmagnetic layer provided on the first interfacial magnetic layer, a second interfacial magnetic layer on the nonmagnetic layer, a second metal layer on the second interfacial magnetic layer and including a second metal, and a pinned layer provided on the second metal layer and including the second metal atoms.
摘要翻译：根据一个实施例，包括磁阻元件的磁性随机存取存储器包括包含第一金属原子的自由层，在自由层上的第一金属层，并且包括第一金属，第一金属层上的第一界面磁性层，设置在第一界面磁性层上的非磁性层，非磁性层上的第二界面磁性层，第二界面磁性层上的第二金属层，并包括第二金属，以及设置在第二金属层上的被钉扎层，第二金属原子。

6. 发明申请

US20070022452A1 BROADCAST SYSTEM AND METHOD THEREFOR 有权
标题翻译：广播系统及其方法
公开(公告)号：US20070022452A1
公开(公告)日：2007-01-25
申请号：US11470838
申请日：2006-09-07
申请人： Keisei YAMAMURO , Yasuyuki SONODA
发明人： Keisei YAMAMURO , Yasuyuki SONODA
IPC分类号： H04N7/173 , H04N7/16
CPC分类号： H04H20/93 , H04H60/47 , H04H60/65 , H04H60/82
摘要： A sorting section in a restoration section sorts out a packet for an intended service from a transport stream received according to the control of a reception control section. The sorted out packet is provided to an output section and restored to NTSC signals. An audiovisual output section (such as a TV set) receives the signals and outputs images and voices. The reception control section acquires information on the type of contents chosen out of the transport stream through the sorting section, and further compares the contents type information with restorable contents type information recorded in a restorable contents type information recording section. Then, a determination is made whether or not the contents intended for restoration are restorable. Depending on the determination, the manner of process applied to the contents is changed. For example, the restoration of the contents is interrupted.
摘要翻译：恢复部分中的分类部分根据接收控制部分的控制从传输流中分出用于预期服务的分组。经整理的分组被提供给输出部分并恢复为NTSC信号。音像输出部分（如电视机）接收信号并输出图像和声音。接收控制部分通过分类部分获取从传输流中选择的内容的类型的信息，并且进一步将内容类型信息与记录在可恢复内容类型信息记录部分中的可恢复内容类型信息进行比较。然后，确定旨在恢复的内容是否可恢复。取决于确定，应用于内容的过程的方式改变。例如，内容的恢复被中断。

7. 发明申请

US20160093469A1 ETCHING APPARATUS AND ETCHING METHOD 有权
标题翻译：蚀刻装置和蚀刻方法
公开(公告)号：US20160093469A1
公开(公告)日：2016-03-31
申请号：US14644159
申请日：2015-03-10
申请人： Yasuyuki SONODA
发明人： Yasuyuki SONODA
IPC分类号： H01J37/305 , H01J37/302
CPC分类号： H01J37/3053 , H01J37/302 , H01J37/321 , H01J37/32422 , H01J2237/334
摘要： According to one embodiment, an etching apparatus includes a stage in an etching chamber, the stage which holds one of a first substrate and a second substrate, a plasma generator in the etching chamber, the plasma generator which is opposite to the stage and irradiates an ion beam toward the stage, a grid which is provided between the plasma generator and the stage, a supporter supporting the stage, the supporter having a rotational axis in a direction in which the ion beam is irradiated, a controller which is configured to mount the first substrate on the stage and irradiate the ion beam with the beam angle larger than 0° to the first substrate, when an elapsed time from an end of an etching of a predetermined layer in the second substrate is equal to or larger than a predetermined time.
摘要翻译：根据一个实施例，蚀刻装置包括在蚀刻室中的台，保持第一基板和第二基板中的一个的阶段，蚀刻室中的等离子体发生器，与该台相反的等离子体发生器，离子束朝向舞台，设置在等离子体发生器和舞台之间的格栅，支撑舞台的支撑件，具有沿着离子束照射的方向的旋转轴的支撑件，配置成安装第一基板，并且当从第二基板中的预定层的蚀刻结束起经过的时间等于或大于预定时间时，从第一基板射出大于0°的光束角度的离子束，。

8. 发明申请

US20160087195A1 ETCHING APPARATUS AND ETCHING METHOD 有权
标题翻译：蚀刻装置和蚀刻方法
公开(公告)号：US20160087195A1
公开(公告)日：2016-03-24
申请号：US14638731
申请日：2015-03-04
申请人： Yasuyuki SONODA
发明人： Yasuyuki SONODA
IPC分类号： H01L43/12 , H01J37/32
CPC分类号： H01L43/12 , H01J37/32357 , H01J37/32422 , H01J37/32715 , H01J2237/20207 , H01J2237/20214 , H01J2237/3151 , H01L43/02
摘要： According to one embodiment, an etching apparatus includes an etching chamber, a stage in the etching chamber, a plasma generator in the etching chamber, the plasma generator being opposite to the stage and irradiating an ion beam toward the stage, a supporter supporting the stage, the supporter having a rotational axis in a direction in which the ion beam is irradiated, a first driver changing a beam angle between a direction which is perpendicular to an upper surface of the stage and the direction in which the ion beam is irradiated, and a second driver which rotates the stage on the rotational axis.
摘要翻译：根据一个实施例，蚀刻装置包括蚀刻室，蚀刻室中的阶段，蚀刻室中的等离子体发生器，等离子体发生器与舞台相对并向离子束照射离子束，支撑台具有沿着照射离子束的方向的旋转轴的支撑体，改变垂直于载物台的上表面的方向与离子束的照射方向之间的波束角的第一驱动器，以及第二驱动器，其使转台在旋转轴线上旋转。

9. 发明申请

US20100315993A1 BROADCAST SYSTEM AND ITS METHOD 审中-公开
标题翻译：广播系统及其方法
公开(公告)号：US20100315993A1
公开(公告)日：2010-12-16
申请号：US12861434
申请日：2010-08-23
申请人： Keisei YAMAMURO , Yasuyuki SONODA
发明人： Keisei YAMAMURO , Yasuyuki SONODA
IPC分类号： H04B7/185
CPC分类号： H04H20/93 , H04H60/47 , H04H60/65 , H04H60/82
摘要： A sorting section in a restoration section sorts out a packet for an intended service from a transport stream received according to the control of a reception control section. The sorted out packet is provided to an output section and restored to NTSC signals. An audiovisual output section (such as a TV set) receives the signals and outputs images and voices. The reception control section acquires information on the type of contents chosen out of the transport stream through the sorting section, and further compares the contents type information with restorable contents type information recorded in a restorable contents type information recording section. Then, a determination is made whether or not the contents intended for restoration are restorable. Depending on the determination, the manner of process applied to the contents is changed. For example, the restoration of the contents is interrupted.
摘要翻译：恢复部分中的分类部分根据接收控制部分的控制从传输流中分出用于预期服务的分组。经整理的分组被提供给输出部分并恢复为NTSC信号。音像输出部分（如电视机）接收信号并输出图像和声音。接收控制部分通过分类部分获取从传输流中选择的内容的类型的信息，并且进一步将内容类型信息与记录在可恢复内容类型信息记录部分中的可恢复内容类型信息进行比较。然后，确定旨在恢复的内容是否可恢复。取决于确定，应用于内容的过程的方式改变。例如，内容的恢复被中断。

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