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1. 发明授权

US06703707B1 Semiconductor device having radiation structure 有权
标题翻译：具有辐射结构的半导体器件
公开(公告)号：US06703707B1
公开(公告)日：2004-03-09
申请号：US09717227
申请日：2000-11-22
申请人： Kuniaki Mamitsu , Yasuyoshi Hirai , Kazuhito Nomura , Yutaka Fukuda , Kazuo Kajimoto , Takeshi Miyajima , Tomoatsu Makino , Yoshimi Nakase
发明人： Kuniaki Mamitsu , Yasuyoshi Hirai , Kazuhito Nomura , Yutaka Fukuda , Kazuo Kajimoto , Takeshi Miyajima , Tomoatsu Makino , Yoshimi Nakase
IPC分类号： H01L2334
CPC分类号： H01L24/33 , H01L23/051 , H01L23/4006 , H01L23/4334 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2224/05599 , H01L2224/291 , H01L2224/29111 , H01L2224/29116 , H01L2224/2929 , H01L2224/29299 , H01L2224/29386 , H01L2224/32245 , H01L2224/33 , H01L2224/37147 , H01L2224/40137 , H01L2224/451 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/73215 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2224/85399 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01052 , H01L2924/01057 , H01L2924/01058 , H01L2924/01061 , H01L2924/01068 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01084 , H01L2924/01094 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/04941 , H01L2924/07811 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/15747 , H01L2924/181 , H01L2924/1815 , H01L2924/30107 , H01L2924/351 , H01L2924/3512 , H01L2924/00 , H01L2924/0665 , H01L2924/05442 , H01L2224/29099 , H01L2224/29199 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes two semiconductor chips that are interposed between a pair of radiation members, and thermally and electrically connected to the radiation members. One of the radiation members has two protruding portions and front ends of the protruding portions are connected to principal electrodes of the semiconductor chips. The radiation members are made of a metallic material containing Cu or Al as a main component. The semiconductor chips and the radiation members are sealed with resin with externally exposed radiation surfaces.
摘要翻译：半导体器件包括插入在一对辐射构件之间并且热和电连接到辐射构件的两个半导体芯片。辐射部件中的一个具有两个突出部分，并且突出部分的前端连接到半导体芯片的主电极。辐射构件由含有Cu或Al作为主要成分的金属材料制成。半导体芯片和辐射构件用具有外部暴露的辐射表面的树脂密封。

2. 发明授权

US07145254B2 Transfer-molded power device and method for manufacturing transfer-molded power device 有权
标题翻译：传递成型功率器件及其传输模制功率器件的制造方法
公开(公告)号：US07145254B2
公开(公告)日：2006-12-05
申请号：US10201556
申请日：2002-07-24
申请人： Naohiko Hirano , Takanori Teshima , Yoshimi Nakase , Kenji Yagi , Yasushi Ookura , Kuniaki Mamitsu , Kazuhito Nomura , Yutaka Fukuda
发明人： Naohiko Hirano , Takanori Teshima , Yoshimi Nakase , Kenji Yagi , Yasushi Ookura , Kuniaki Mamitsu , Kazuhito Nomura , Yutaka Fukuda
IPC分类号： H01L23/10 , H01L23/28
CPC分类号： H01L24/33 , H01L21/565 , H01L23/367 , H01L23/3736 , H01L23/4334 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/05624 , H01L2224/29111 , H01L2224/32014 , H01L2224/32245 , H01L2224/33 , H01L2224/33181 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/73215 , H01L2224/73265 , H01L2224/83101 , H01L2224/83203 , H01L2224/83815 , H01L2224/85399 , H01L2224/92247 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/0132 , H01L2924/10158 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15724 , H01L2924/15747 , H01L2924/181 , H01L2924/18301 , H01L2924/30107 , H01L2924/351 , H01L2924/00 , H01L2924/3512 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes a semiconductor chip that generates heat in operation, a pair of heat sinks for cooling the chip, and a mold resin, in which the chip and the heat sinks are embedded. The thickness t1 of the chip and the thickness t2 of one of heat sinks that is joined to the chip using a solder satisfy the equation of t2/t1≧5. Furthermore, the thermal expansion coefficient α1 of the heat sinks and the thermal expansion coefficient α2 of the mold resin satisfy the equation of 0.5≦α2/α1≦1.5. In addition, the surface of the chip that faces the solder has a roughness Ra that satisfies the equation of Ra≦500 nm. Moreover, the solder is a Sn-based solder to suppress relaxation of a compressive stress in the chip, which is caused by the creeping of the solder.
摘要翻译：半导体器件包括在工作中产生热的半导体芯片，用于冷却芯片的一对散热器和嵌入芯片和散热片的模制树脂。使用焊料与芯片接合的芯片的厚度t 1和散热器之一的厚度t 2满足t 2 / t 1> = 5的等式。此外，散热器的热膨胀系数α1和模制树脂的热膨胀系数α2满足0.5≤α2/α1<= 1.5的等式。此外，面向焊料的芯片的表面具有满足Ra <= 500nm的等式的粗糙度Ra。此外，焊料是Sn基焊料，以抑制由焊料蠕变引起的芯片中的压缩应力松弛。

3. 发明授权

US06998707B2 Semiconductor device having radiation structure 有权
公开(公告)号：US06998707B2
公开(公告)日：2006-02-14
申请号：US10699746
申请日：2003-11-04
申请人： Yutaka Fukuda , Kazuhito Nomura , Yoshimi Nakase
发明人： Yutaka Fukuda , Kazuhito Nomura , Yoshimi Nakase
IPC分类号： H01L23/34
CPC分类号： H01L24/33 , H01L23/051 , H01L23/4006 , H01L23/4334 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2224/05599 , H01L2224/291 , H01L2224/29111 , H01L2224/29116 , H01L2224/2929 , H01L2224/29299 , H01L2224/29386 , H01L2224/32245 , H01L2224/33 , H01L2224/37147 , H01L2224/40137 , H01L2224/451 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/73215 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2224/85399 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01052 , H01L2924/01057 , H01L2924/01058 , H01L2924/01061 , H01L2924/01068 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01084 , H01L2924/01094 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/04941 , H01L2924/07811 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/15747 , H01L2924/181 , H01L2924/1815 , H01L2924/30107 , H01L2924/351 , H01L2924/3512 , H01L2924/00 , H01L2924/0665 , H01L2924/05442 , H01L2224/29099 , H01L2224/29199 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes two semiconductor chips that are interposed between a pair of radiation members, and thermally and electrically connected to the radiation members. One of the radiation members has two protruding portions and front ends of the protruding portions are connected to principal electrodes of the semiconductor chips. The radiation members are made of a metallic material containing Cu or Al as a main component. The semiconductor chips and the radiation members are sealed with resin with externally exposed radiation surfaces.

4. 发明授权

US06693350B2 Semiconductor device having radiation structure and method for manufacturing semiconductor device having radiation structure 有权
标题翻译：具有辐射结构的半导体器件和具有辐射结构的半导体器件的制造方法
公开(公告)号：US06693350B2
公开(公告)日：2004-02-17
申请号：US10321365
申请日：2002-12-18
申请人： Takanori Teshima , Yutaka Fukuda , Yoshimi Nakase , Kuniaki Mamitsu , Tomoatsu Makino
发明人： Takanori Teshima , Yutaka Fukuda , Yoshimi Nakase , Kuniaki Mamitsu , Tomoatsu Makino
IPC分类号： H01L2334
CPC分类号： H01L24/33 , H01L23/3135 , H01L23/4334 , H01L24/32 , H01L24/48 , H01L2224/05599 , H01L2224/32014 , H01L2224/32245 , H01L2224/33181 , H01L2224/45099 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/73215 , H01L2224/73265 , H01L2224/85399 , H01L2924/00014 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/01322 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/3512 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes a first conductive member, a second conductive member, a semiconductor chip, which is located between the conductive members, a bonding member, which is located between the first conductive member and the semiconductor chip, another bonding member, which is located between the second conductive member and the semiconductor chip, a molding resin, which is located between the first and second conductive members to seal the semiconductor chip, and a bonding member anti-sticking means, which is located between the molding resin and a surface of one member selected from the group consisting of the semiconductor chip and the conductive members. The bonding member anti-sticking means prevents the bonding members from sticking to the surface in the manufacturing process. As a result, the otherwise insufficient connection due to the sticking between the molding resin and the surface is improved, and the semiconductor device becomes durable in electric performance.
摘要翻译：半导体器件包括第一导电构件，第二导电构件，位于导电构件之间的半导体芯片，位于第一导电构件和半导体芯片之间的接合构件，位于在第二导电构件和半导体芯片之间，位于第一导电构件和第二导电构件之间以密封半导体芯片的模制树脂以及位于模制树脂和表面之间的接合构件防粘装置选自由半导体芯片和导电构件组成的组中的一个构件。接合构件防粘装置在制造过程中防止接合构件粘附到表面。结果，由于模塑树脂和表面之间的粘附而导致的不充分的连接得到改善，并且半导体器件在电气性能方面变得耐用。

5. 发明授权

US09185805B2 Method of manufacturing a circuit substrate 有权
标题翻译：电路基板的制造方法
公开(公告)号：US09185805B2
公开(公告)日：2015-11-10
申请号：US13616102
申请日：2012-09-14
申请人： Yutaka Fukuda
发明人： Yutaka Fukuda
IPC分类号： H05K3/46 , H05K1/18 , H01L21/48 , H01L23/13 , H01L23/16 , H01L23/498 , H01L23/00 , H05K1/11 , H05K3/00 , H05K3/40 , H05K1/03 , H05K3/24 , H05K3/34
CPC分类号： H05K1/183 , H01L21/481 , H01L21/4853 , H01L23/13 , H01L23/16 , H01L23/49816 , H01L23/49827 , H01L24/81 , H01L2224/16225 , H01L2224/81136 , H01L2224/81193 , H01L2224/81801 , H01L2924/00011 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01056 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/15151 , H01L2924/15153 , H01L2924/1517 , H05K1/0306 , H05K1/111 , H05K3/0014 , H05K3/245 , H05K3/3436 , H05K3/4007 , H05K3/4061 , H05K3/4611 , H05K3/4629 , H05K3/4697 , H05K2201/0367 , H05K2201/091 , H05K2203/0278 , H05K2203/308 , Y02P70/611 , Y10T29/4913 , Y10T29/49139 , Y10T29/49165 , Y10T156/10 , Y10T156/1052 , H01L2924/00 , H01L2224/0401
摘要： A thin circuit substrate and a circuit module are arranged such that the circuit module includes an IC mounted on a circuit substrate, the IC includes an IC body and an solder bump located on a mounting surface of the IC body, and the circuit substrate includes a substrate including a recess formed by recessing a portion of a mounting surface of the substrate on which the IC is to be mounted, and a terminal protruding from the mounting surface of the substrate. The terminal is to be electrically connected to the solder bump.
摘要翻译：薄电路基板和电路模块被布置成使得电路模块包括安装在电路基板上的IC，该IC包括位于IC体的安装表面上的IC体和焊料凸块，并且电路基板包括：基板，其包括通过凹入其上将要安装IC的基板的安装表面的一部分而形成的凹部和从基板的安装表面突出的端子。端子将电连接到焊料凸块。

6. 发明授权

US08265764B2 Artificial vision system 有权
标题翻译：人工视觉系统
公开(公告)号：US08265764B2
公开(公告)日：2012-09-11
申请号：US10537266
申请日：2003-12-04
申请人： Yasuo Tano , Takashi Fujikado , Yutaka Fukuda , Tetsuya Yagi
发明人： Yasuo Tano , Takashi Fujikado , Yutaka Fukuda , Tetsuya Yagi
IPC分类号： A61N1/00 , A61B5/04
CPC分类号： A61N1/36046 , A61F9/08 , A61N1/0543 , A61N1/37229 , A61N1/3727
摘要： An object is to provide an artificial vision system ensuring a wide field of view without damaging a retina. In the artificial vision system, a plurality of electrodes (23) are to be implanted so as to stick in an optic papilla of an eye of a patient. A signal for stimulation pulse is generated based on an image captured by an image pick up device (11) to be disposed outside a body of the patient. The electrical stimulation signals outputted from the electrodes (23) based on the signals for stimulation pulse stimulate an optic nerve of the eye, thereby enabling the patient to visually recognize the image from the image pickup device (11).
摘要翻译：目的是提供一种人造视觉系统，确保广泛的视野，而不损害视网膜。在人造视觉系统中，要植入多个电极（23）以便粘贴在患者眼睛的视神经乳头中。基于由图像拾取装置（11）捕获的图像来生成用于刺激脉冲的信号，以设置在患者身体外部。基于用于刺激脉冲的信号从电极（23）输出的电刺激信号刺激眼睛的视神经，从而使得患者能够从图像拾取装置（11）可视地识别图像。

7. 发明申请

US20110285427A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110285427A1
公开(公告)日：2011-11-24
申请号：US13129980
申请日：2010-05-17
申请人： Masaki Koyama , Yutaka Fukuda
发明人： Masaki Koyama , Yutaka Fukuda
IPC分类号： H03K3/027 , H01L29/739 , H01L29/78
CPC分类号： H01L29/7391 , H01L24/73 , H01L29/0834 , H01L29/7397 , H01L2224/48472 , H01L2924/12036 , H01L2924/13055 , H01L2924/13091 , H01L2924/30107 , H01L2924/00
摘要： A semiconductor device includes: a semiconductor substrate having a first semiconductor layer and a second semiconductor layer formed on a first surface; a diode having a first electrode and a second electrode; a control pad; a control electrode electrically coupled with the control pad; and an insulation member. The first electrode is formed on a second surface of the first semiconductor layer. The second electrode is formed on the first surface. Current flows between the first electrode and the second electrode. The control pad is arranged on the first surface so that the pad inputs a control signal for controlling an injection amount of a carrier into the first semiconductor layer. The insulation member insulates between the control electrode and the second electrode and between the control electrode and the semiconductor substrate.
摘要翻译：半导体器件包括：具有形成在第一表面上的第一半导体层和第二半导体层的半导体衬底; 具有第一电极和第二电极的二极管; 控制板与所述控制板电耦合的控制电极; 和绝缘构件。第一电极形成在第一半导体层的第二表面上。第二电极形成在第一表面上。电流在第一电极和第二电极之间流动。控制焊盘设置在第一表面上，使得焊盘输入用于控制载体进入第一半导体层的注入量的控制信号。绝缘构件在控制电极和第二电极之间以及控制电极和半导体衬底之间绝缘。

8. 发明申请

US20100221601A1 ELECTRICAL PART, NONAQUEOUS-ELECTROLYTE CELL, AND LEAD CONDUCTOR WITH INSULATING COATING LAYER AND SEALED VESSEL EACH FOR USE IN THESE 审中-公开
标题翻译：电气部件，非电解电解槽和导线导体，具有绝缘涂层和密封容器用于这些
公开(公告)号：US20100221601A1
公开(公告)日：2010-09-02
申请号：US12160357
申请日：2007-01-05
申请人： Yutaka Fukuda
发明人： Yutaka Fukuda
IPC分类号： H01M2/08 , H05K5/06 , H01M4/02
CPC分类号： H01M2/06 , H01M2/0275 , H01M2/0277 , H01M2/0285 , H01M2/0287 , H01M2/08 , H01M10/05
摘要： An electrical part comprising a lead conductor and a sealed vessel including a metal layer, the lead conductor extending from the inside of the sealed vessel to the outside, wherein the lead conductor and the sealed vessel are fusion-bonded through a thermal adhesive layer at the sealing portion, and wherein a softening-resistant layer having through holes made in the thickness direction is provided between the lead conductor and the metal layer at the sealing portion. A nonaqueous electrolyte cell comprising an electrode and a nonaqueous electrolyte both enclosed inside the sealed vessel. A sealed vessel and a lead conductor having an insulating coating layer, both of which can be used in the electrical part or the like.
摘要翻译：一种电气部件，包括引线导体和密封容器，所述密封容器包括金属层，所述引线导体从所述密封容器的内部延伸到外部，其中所述引线导体和所述密封容器通过所述热粘合剂层熔合密封部分，并且其中在所述密封部分处，在所述引线导体和所述金属层之间设置在所述厚度方向上具有通孔的耐软化层。包含密封容器内的电极和非水电解质的非水电解质电池。一种具有绝缘涂层的密封容器和引线导体，它们均可用于电气部件等。

9. 发明申请

US20100140658A1 Method of manufacturing semiconductor device including insulated gate bipolar transistor and diode 有权
标题翻译：制造半导体器件的方法包括绝缘栅双极晶体管和二极管
公开(公告)号：US20100140658A1
公开(公告)日：2010-06-10
申请号：US12591694
申请日：2009-11-30
申请人： Masaki Koyama , Yutaka Fukuda
发明人： Masaki Koyama , Yutaka Fukuda
IPC分类号： H01L27/102 , H01L21/78 , H01L21/98
CPC分类号： H01L29/66325 , H01L27/0664 , H01L29/7397 , H01L29/861 , H01L2224/48091 , H01L2224/48247 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： In a method of manufacturing a semiconductor device, a semiconductor substrate of a first conductivity type having first and second surfaces is prepared. Second conductivity type impurities for forming a collector layer are implanted to the second surface using a mask that has an opening at a portion where the collector layer will be formed. An oxide layer is formed by enhanced-oxidizing the collector layer. First conductivity type impurities for forming a first conductivity type layer are implanted to the second surface using the oxide layer as a mask. A support base is attached to the second surface and a thickness of the semiconductor substrate is reduced from the first surface. An element part including a base region, an emitter region, a plurality of trenches, a gate insulating layer, a gate electrode, and a first electrode is formed on the first surface of the semiconductor substrate.
摘要翻译：在制造半导体器件的方法中，制备具有第一和第二表面的第一导电类型的半导体衬底。用于形成集电极层的第二导电类型杂质使用在将形成集电极层的部分具有开口的掩模注入第二表面。通过增强氧化集电体层形成氧化物层。使用氧化物层作为掩模将用于形成第一导电类型层的第一导电类型杂质注入第二表面。支撑基座附接到第二表面，并且半导体衬底的厚度从第一表面减小。在半导体衬底的第一表面上形成包括基极区域，发射极区域，多个沟槽，栅极绝缘层，栅极电极和第一电极的元件部分。

10. 发明授权

US07639637B2 Wireless apparatus and method of selecting wireless access point 有权
标题翻译：无线设备和选择无线接入点的方法
公开(公告)号：US07639637B2
公开(公告)日：2009-12-29
申请号：US11545757
申请日：2006-10-11
申请人： Masanori Honjo , Yuji Oie , Yutaka Fukuda
发明人： Masanori Honjo , Yuji Oie , Yutaka Fukuda
IPC分类号： H04B7/00 , H04W4/00
CPC分类号： H04W48/20 , H04W84/12
摘要： PER when a wireless apparatus is connected with a predetermined wireless access point is estimated on the basis of three parameters of the received signal strength, the interference signal strength, and the interference adjacency, which have been transmitted from the wireless access point, then the communication throughput is calculated by using the estimated PER, and the connection with a wireless access point expected to have highest communication efficiency is performed. As a result, it is possible to select a wireless access point having high communication efficiency with good precision, as compared with a method, in the related art, of simply performing a connection with a wireless access point having high received signal strength or a method of simply performing a connection with a wireless access point where an interference wave is strong.
摘要翻译：基于从无线接入点发送的接收信号强度，干扰信号强度和干扰邻接度的三个参数来估计无线设备与预定无线接入点连接的PER，然后通信通过使用估计的PER来计算吞吐量，并且执行与期望具有最高通信效率的无线接入点的连接。结果，与现有技术中简单地执行与具有高接收信号强度的无线接入点的连接或方法的方法相比，可以以高精度选择具有高通信效率的无线接入点简单地执行与干扰波强的无线接入点的连接。

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