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    • 1. 发明申请
    • RADIO TRANSMITTER USING CARTESIAN LOOP
    • 使用卡特彼勒环路的无线电发射机
    • US20090042521A1
    • 2009-02-12
    • US12188022
    • 2008-08-07
    • Shoji OtakaYuta ArakiToru Hashimoto
    • Shoji OtakaYuta ArakiToru Hashimoto
    • H04B1/04
    • H04B1/0475H03F1/34H03F3/24H04B2001/0433
    • A radio transmitter including a combiner which combines input I/Q signals with feedback I/Q signals, a power amplifier which amplifies the quadrature modulated signal, a detector which detects amplitude and phase differences between the input and feedback I/Q signals, a switch to turn on and off the feedback I/Q signals, a generator to generate control signals which minimizes the amplitude difference and the phase difference, in a state where a transmission power is set, during for a period during which the switch is turned off, an amplitude adjuster which adjusts an amplitude of the feedback RF signal, during a period during which the switch is turned on, and a phase adjuster which adjusts a phase of the local signal, during the period during which the switch is turned on.
    • 一种无线电发射机,包括将输入I / Q信号与反馈I / Q信号组合的组合器,放大正交调制信号的功率放大器,检测输入和反馈I / Q信号之间的幅度和相位差的检测器,开关 打开和关闭反馈I / Q信号的发生器,用于产生控制信号,在发送功率被设定的状态下,在关闭开关的时段期间使幅度差和相位差最小化的控制信号, 幅度调节器,其在开关导通的时段期间调整反馈RF信号的幅度;以及相位调节器,其在开关接通期间调节本地信号的相位。
    • 2. 发明授权
    • MOS resistance controlling device and MOS attenuator
    • MOS电阻控制装置和MOS衰减器
    • US07663420B2
    • 2010-02-16
    • US11936214
    • 2007-11-07
    • Yuta ArakiShoji OtakaToru Hashimoto
    • Yuta ArakiShoji OtakaToru Hashimoto
    • H03L5/00
    • H01L27/0802H03H11/245
    • A MOS resistance controlling device includes: a plurality of MOS transistors having a first MOS transistor to N-th (the integer N is larger than 1) MOS transistor being serially connected, the source of the first MOS transistor being set to a first reference potential, the drain the N-th MOS transistor being set to a second reference potential, and the drain of an I-th MOS transistor being connected to the source of an I+1-th MOS transistor, where I is an integer from 1 to N−1; a current source which is electrically disposed at connection node between the drain of the N-th MOS transistors and the second reference potential; and an operational amplifier having a first input terminal being supplied with a third reference potential, a second input terminal connected with the connection node and an output terminal being connected with gates of the MOS transistors.
    • MOS电阻控制装置包括:多个MOS晶体管,其具有串联连接的第一MOS晶体管至第N(整数N大于1)的MOS晶体管,第一MOS晶体管的源极被设置为第一参考电位 ,第N个MOS晶体管的漏极被设置为第二参考电位,并且第一MOS晶体管的漏极连接到第I + 1个MOS晶体管的源极,其中I是从1到 N-1; 电流源,电流配置在第N个MOS晶体管的漏极与第2基准电位之间的连接节点处; 以及具有被提供有第三参考电位的第一输入端的运算放大器,与所述连接节点连接的第二输入端和与所述MOS晶体管的栅极连接的输出端。
    • 3. 发明申请
    • MOS RESISTANCE CONTROLLING DEVICE, MOS ATTENUATOR AND RADIO TRANSMITTER
    • MOS电阻控制装置,MOS衰减器和无线电发射器
    • US20080311867A1
    • 2008-12-18
    • US12025314
    • 2008-02-04
    • Yuta ArakiShoji OtakaToru Hashimoto
    • Yuta ArakiShoji OtakaToru Hashimoto
    • H04B1/04H03L5/00
    • H03L7/08H03D3/007H03F1/56H03F3/245H03F2200/211H03F2200/451H03F2200/453
    • A MOS resistance controlling device includes: a plurality of MOS transistors having a first MOS transistor to N-th (the integer N is larger than 1) MOS transistor being serially connected, the source of the first MOS transistor being set to a first reference potential, the drain the N-th MOS transistor being set to a second reference potential, and the drain of an I-th MOS transistor being connected to the source of an I+1-th MOS transistor, where I is an integer from 1 to N−1; a current source which is electrically disposed at connection node between the drain of the N-th MOS transistors and the second reference potential; and an operational amplifier having a first input terminal being supplied with a third reference potential, a second input terminal connected with the connection node and an output terminal being connected with gates of the MOS transistors.
    • MOS电阻控制装置包括:多个MOS晶体管,其具有串联连接的第一MOS晶体管至第N(整数N大于1)的MOS晶体管,第一MOS晶体管的源极被设置为第一参考电位 ,第N个MOS晶体管的漏极被设置为第二参考电位,并且第一MOS晶体管的漏极连接到第I + 1个MOS晶体管的源极,其中I是从1到 N-1; 电流源,电流配置在第N个MOS晶体管的漏极与第2基准电位之间的连接节点处; 以及具有被提供有第三参考电位的第一输入端的运算放大器,与所述连接节点连接的第二输入端和与所述MOS晶体管的栅极连接的输出端。
    • 4. 发明授权
    • Radio transmitter using Cartesian loop
    • 无线电发射机使用笛卡尔回波
    • US08060038B2
    • 2011-11-15
    • US12188022
    • 2008-08-07
    • Shoji OtakaYuta ArakiToru Hashimoto
    • Shoji OtakaYuta ArakiToru Hashimoto
    • H04B1/04H04B1/02
    • H04B1/0475H03F1/34H03F3/24H04B2001/0433
    • A radio transmitter including a combiner which combines input I/Q signals with feedback I/Q signals, a power amplifier which amplifies the quadrature modulated signal, a detector which detects amplitude and phase differences between the input and feedback I/Q signals, a switch to turn on and off the feedback I/Q signals, a generator to generate control signals which minimizes the amplitude difference and the phase difference, in a state where a transmission power is set, during for a period during which the switch is turned off, an amplitude adjuster which adjusts an amplitude of the feedback RF signal, during a period during which the switch is turned on, and a phase adjuster which adjusts a phase of the local signal, during the period during which the switch is turned on.
    • 一种无线电发射机,包括将输入I / Q信号与反馈I / Q信号组合的组合器,放大正交调制信号的功率放大器,检测输入和反馈I / Q信号之间的幅度和相位差的检测器,开关 打开和关闭反馈I / Q信号的发生器,用于产生控制信号,在发送功率被设定的状态下,在关闭开关的时段期间使幅度差和相位差最小化的控制信号, 幅度调节器,其在开关导通的时段期间调整反馈RF信号的幅度;以及相位调节器,其在开关接通期间调节本地信号的相位。
    • 5. 发明申请
    • MOS RESISTANCE CONTROLLING DEVICE AND MOS ATTENUATOR
    • MOS电阻控制装置和MOS衰减器
    • US20080204107A1
    • 2008-08-28
    • US11936214
    • 2007-11-07
    • Yuta ArakiShoji OtakaToru Hashimoto
    • Yuta ArakiShoji OtakaToru Hashimoto
    • H03L5/00
    • H01L27/0802H03H11/245
    • A MOS resistance controlling device includes: a plurality of MOS transistors having a first MOS transistor to N-th (the integer N is larger than 1) MOS transistor being serially connected, the source of the first MOS transistor being set to a first reference potential, the drain the N-th MOS transistor being set to a second reference potential, and the drain of an I-th MOS transistor being connected to the source of an I+1-th MOS transistor, where I is an integer from 1 to N−1; a current source which is electrically disposed at connection node between the drain of the N-th MOS transistors and the second reference potential; and an operational amplifier having a first input terminal being supplied with a third reference potential, a second input terminal connected with the connection node and an output terminal being connected with gates of the MOS transistors.
    • MOS电阻控制装置包括:多个MOS晶体管,其具有串联连接的第一MOS晶体管至第N(整数N大于1)的MOS晶体管,第一MOS晶体管的源极被设置为第一参考电位 ,第N个MOS晶体管的漏极被设置为第二参考电位,并且第一MOS晶体管的漏极连接到第I + 1个MOS晶体管的源极,其中I是从1到 N-1; 电流源,电流配置在第N个MOS晶体管的漏极与第2基准电位之间的连接节点处; 以及具有被提供有第三参考电位的第一输入端的运算放大器,与所述连接节点连接的第二输入端和与所述MOS晶体管的栅极连接的输出端。
    • 6. 发明授权
    • Amplifier circuit and communication device
    • 放大器电路和通讯装置
    • US07501892B2
    • 2009-03-10
    • US11755869
    • 2007-05-31
    • Shoji OtakaYuta Araki
    • Shoji OtakaYuta Araki
    • H03F3/45
    • H03F3/45183H03F1/3211H03F3/24H03F2200/357H03F2200/456H03F2203/45288H03F2203/45362H03F2203/45466H03G1/0023
    • An amplifier circuit according to the present invention comprises: a first differential amplifier circuit including a first transistor having a gate terminal forming a first input node, a second transistor having a gate terminal forming a second input node and having a dimensional ratio with respect to the first transistor of K:M (where K>M), and a first current source that supplies a first current to a source terminal of the first transistor and a source terminal of the second transistor; a second differential amplifier circuit including a third transistor having a gate terminal forming a third input node, a fourth transistor having a gate terminal forming a fourth input node and having a dimensional ratio with respect to the third transistor of M:K, and a second current source that supplies a second current to a source terminal of the third transistor and a source terminal of the fourth transistor, the second differential amplifier circuit having a same gain as the first differential amplifier circuit; and a third differential amplifier circuit including a fifth transistor having a gate terminal forming a fifth input node, a sixth transistor having a gate terminal forming a sixth input node and having a dimensional ratio with respect to the fifth transistor of 1:1, and a variable current source that supplies a third current to a source terminal of the fifth transistor and a source terminal of the sixth transistor, wherein the third differential amplifier circuit combines the third current and the fifth transistor so that a gain of the third differential amplifier circuit is greater than a gain of the first differential amplifier circuit when the third current is a first magnitude, and the gain of the third differential amplifier circuit is lower than the gain of the first differential amplifier circuit when the third current is a second magnitude that differs from the first magnitude.
    • 根据本发明的放大器电路包括:第一差分放大器电路,包括具有形成第一输入节点的栅极端子的第一晶体管,第二晶体管,具有形成第二输入节点的栅极端子,并且具有相对于 第一晶体管K:M(其中K> M)和第一电流源,其向第一晶体管的源极端子和第二晶体管的源极端子提供第一电流; 第二差分放大器电路,包括具有形成第三输入节点的栅极端子的第三晶体管,第四晶体管,具有形成第四输入节点的栅极端子,并且具有相对于M:K的第三晶体管的尺寸比,第二晶体管的第二 向第三晶体管的源极端子和第四晶体管的源极端子提供第二电流的电流源,第二差分放大器电路具有与第一差分放大器电路相同的增益; 以及第三差分放大电路,包括具有形成第五输入节点的栅极端子的第五晶体管,第六晶体管,具有形成第六输入节点的栅极端子,并且具有相对于第五晶体管的尺寸比为1:1,以及 向第五晶体管的源极端子和第六晶体管的源极端子提供第三电流的可变电流源,其中第三差分放大器电路组合第三电流和第五晶体管,使得第三差分放大器电路的增益为 大于第三差分放大器电路的增益,当第三电流是第一幅度时,第三差分放大器电路的增益低于第一差分放大器电路的增益, 第一大。
    • 7. 发明申请
    • AMPLIFIER CIRCUIT AND COMMUNICATION DEVICE
    • 放大器电路和通信设备
    • US20080068082A1
    • 2008-03-20
    • US11755869
    • 2007-05-31
    • Shoji OtakaYuta Araki
    • Shoji OtakaYuta Araki
    • H03F3/45
    • H03F3/45183H03F1/3211H03F3/24H03F2200/357H03F2200/456H03F2203/45288H03F2203/45362H03F2203/45466H03G1/0023
    • An amplifier circuit according to the present invention comprises: a first differential amplifier circuit including a first transistor having a gate terminal forming a first input node, a second transistor having a gate terminal forming a second input node and having a dimensional ratio with respect to the first transistor of K:M (where K>M), and a first current source that supplies a first current to a source terminal of the first transistor and a source terminal of the second transistor; a second differential amplifier circuit including a third transistor having a gate terminal forming a third input node, a fourth transistor having a gate terminal forming a fourth input node and having a dimensional ratio with respect to the third transistor of M:K, and a second current source that supplies a second current to a source terminal of the third transistor and a source terminal of the fourth transistor, the second differential amplifier circuit having a same gain as the first differential amplifier circuit; and a third differential amplifier circuit including a fifth transistor having a gate terminal forming a fifth input node, a sixth transistor having a gate terminal forming a sixth input node and having a dimensional ratio with respect to the fifth transistor of 1:1, and a variable current source that supplies a third current to a source terminal of the fifth transistor and a source terminal of the sixth transistor, wherein the third differential amplifier circuit combines the third current and the fifth transistor so that a gain of the third differential amplifier circuit is greater than a gain of the first differential amplifier circuit when the third current is a first magnitude, and the gain of the third differential amplifier circuit is lower than the gain of the first differential amplifier circuit when the third current is a second magnitude that differs from the first magnitude.
    • 根据本发明的放大器电路包括:第一差分放大器电路,包括具有形成第一输入节点的栅极端子的第一晶体管,第二晶体管,具有形成第二输入节点的栅极端子,并且具有相对于 第一晶体管K:M(其中K> M)和第一电流源,其向第一晶体管的源极端子和第二晶体管的源极端子提供第一电流; 第二差分放大器电路,包括具有形成第三输入节点的栅极端子的第三晶体管,第四晶体管,具有形成第四输入节点的栅极端子,并且具有相对于M:K的第三晶体管的尺寸比,第二晶体管的第二 向第三晶体管的源极端子和第四晶体管的源极端子提供第二电流的电流源,第二差分放大器电路具有与第一差分放大器电路相同的增益; 以及第三差分放大电路,包括具有形成第五输入节点的栅极端子的第五晶体管,第六晶体管,具有形成第六输入节点的栅极端子,并且具有相对于第五晶体管的尺寸比为1:1,以及 向第五晶体管的源极端子和第六晶体管的源极端子提供第三电流的可变电流源,其中第三差分放大器电路组合第三电流和第五晶体管,使得第三差分放大器电路的增益为 大于第三差分放大器电路的增益,当第三电流是第一幅度时,第三差分放大器电路的增益低于第一差分放大器电路的增益, 第一大。
    • 10. 发明授权
    • Receiving apparatus
    • 接收装置
    • US08655295B2
    • 2014-02-18
    • US13370535
    • 2012-02-10
    • Tsuyoshi KogawaKoji OguraShoji OtakaHiroaki Ishihara
    • Tsuyoshi KogawaKoji OguraShoji OtakaHiroaki Ishihara
    • H04B1/06
    • H04B17/318
    • According to one embodiment, a receiving apparatus includes a variable gain amplifier, comparator, and signal processor. The comparator compares a signal level of the second signal with a first threshold to generate a third signal, a signal level of the third signal being set to a high signal if the signal level of the second signal is greater than the first threshold. The signal processor determines presence of a signal if a rate of high signals in third signals for a period is greater than a second threshold. The second threshold is set to a first value when the control of the gain is performed and set to a second value when the demodulation processing is performed. The first value is greater than the second value.
    • 根据一个实施例,接收设备包括可变增益放大器,比较器和信号处理器。 比较器将第二信号的信号电平与第一阈值进行比较以产生第三信号,如果第二信号的信号电平大于第一阈值,则将第三信号的信号电平设置为高信号。 如果在一段时间内的第三信号中的高信号的速率大于第二阈值,则信号处理器确定信号的存在。 当执行增益的控制时,第二阈值被设置为第一值,并且当执行解调处理时将其设置为第二值。 第一个值大于第二个值。