会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Wafer dividing method
    • 晶圆分割法
    • US07618878B2
    • 2009-11-17
    • US12071711
    • 2008-02-25
    • Masaru NakamuraYusuke Nagai
    • Masaru NakamuraYusuke Nagai
    • H01L21/46H01L21/78H01L21/301
    • H01L21/78B23K26/40B23K2103/50B28D5/0011H01L21/6836H01L2221/68327
    • A method of dividing a wafer having a plurality of devices, which are formed in a plurality of areas sectioned by streets formed in a lattice pattern on the front surface, and having test metal patterns which are formed on the streets, comprising the steps of: a laser beam application step for carrying out laser processing to form a dividing start point along a street on both sides of the test metal patterns by applying a laser beam along the street on both sides of the test metal patterns in the street formed on the wafer; and a dividing step for dividing the wafer which has been laser processed to form dividing start points along the dividing start points by exerting external force to the wafer, resulting in leaving the streets having the test metal patterns formed thereon behind.
    • 一种分割具有多个装置的晶片的方法,所述晶片形成在由前表面上的格子图案形成的街道划分的多个区域中,并且具有形成在街道上的测试金属图案,包括以下步骤: 激光束施加步骤,用于通过在形成在晶片上的街道中的测试金属图案的两侧沿着街道施加激光束来进行激光处理以在测试金属图案的两侧上沿着街道形成分割起始点 ; 以及分割步骤,通过向晶片施加外力,分割已经被激光处理的晶片沿分割开始点形成分割开始点,导致留下在其上形成有测试金属图案的街道。
    • 2. 发明申请
    • Wafer dividing method
    • 晶圆分割法
    • US20080153264A1
    • 2008-06-26
    • US12071711
    • 2008-02-25
    • Masaru NakamuraYusuke Nagai
    • Masaru NakamuraYusuke Nagai
    • H01L21/00
    • H01L21/78B23K26/40B23K2103/50B28D5/0011H01L21/6836H01L2221/68327
    • A method of dividing a wafer having a plurality of devices, which are formed in a plurality of areas sectioned by streets formed in a lattice pattern on the front surface, and having test metal patterns which are formed on the streets, comprising the steps of: a laser beam application step for carrying out laser processing to form a dividing start point along a street on both sides of the test metal patterns by applying a laser beam along the street on both sides of the test metal patterns in the street formed on the wafer; and a dividing step for dividing the wafer which has been laser processed to form dividing start points along the dividing start points by exerting external force to the wafer, resulting in leaving the streets having the test metal patterns formed thereon behind.
    • 一种分割具有多个装置的晶片的方法,所述晶片形成在由前表面上的格子图案形成的街道划分的多个区域中,并且具有形成在街道上的测试金属图案,包括以下步骤: 激光束施加步骤,用于通过在形成在晶片上的街道中的测试金属图案的两侧沿着街道施加激光束来进行激光处理以在测试金属图案的两侧上沿着街道形成分割起始点 ; 以及分割步骤,通过向晶片施加外力,分割已经被激光处理的晶片沿分割开始点形成分割开始点,导致留下在其上形成有测试金属图案的街道。
    • 3. 发明授权
    • Wafer dividing method
    • 晶圆分割法
    • US07329564B2
    • 2008-02-12
    • US11198137
    • 2005-08-08
    • Masaru NakamuraYusuke NagaiKentaro Iizuka
    • Masaru NakamuraYusuke NagaiKentaro Iizuka
    • H01L21/00H01L21/30H01L21/46
    • H01L21/6836H01L21/78H01L33/0095H01L2221/68327H01L2221/68336
    • A method of dividing a wafer having a plurality of dividing lines formed on the front surface in a lattice pattern and function elements formed in a plurality of areas sectioned by the plurality of dividing lines into individual chips, along the dividing lines, the method comprising the steps of forming a deteriorated layer by applying a laser beam capable of passing through the wafer along the dividing lines; expanding the support tape affixed to the wafer to divide the wafer into individual chips along the dividing lines where the deteriorated layer has been formed and to form a space between adjacent chips; and applying an external stimulus to an area, to which the wafer is affixed, of the support tape in the above state to cure the adhesive layer to maintain the space between adjacent chips.
    • 一种将沿着划分线将形成在前表面上的多个划分线的晶片和由多个分割线划分成多个区域的功能元件分成单个芯片的方法,该方法包括: 通过施加能够沿分割线穿过晶片的激光束形成劣化层的步骤; 扩展固定在晶片上的支撑胶带,沿着形成了劣化层的分割线将晶片分割成单独的芯片,并在相邻芯片之间形成空间; 并且在上述状态下将外部刺激施加到支撑带的晶片固定的区域上,以固化粘合剂层以保持相邻芯片之间的空间。
    • 4. 发明申请
    • Wafer dividing method
    • 晶圆分割法
    • US20070004179A1
    • 2007-01-04
    • US11472285
    • 2006-06-22
    • Masaru NakamuraYusuke Nagai
    • Masaru NakamuraYusuke Nagai
    • H01L21/78
    • H01L21/78B23K26/40B23K2103/50B28D5/0011
    • A method of dividing a wafer having a plurality of devices, which are formed in a plurality of areas sectioned by streets formed in a lattice pattern on the front surface and test metal patterns which are formed on the streets, comprising: a metal pattern breaking step for forming a break line in the test metal patterns by applying a pulse laser beam having permeability to the wafer to the rear surface of the wafer with its focal point set to a position near the test metal patterns; a deteriorated layer forming step for forming a deteriorated layer along the streets above the break lines in the inside of the wafer by applying a pulse laser beam having permeability to the wafer to the rear surface of the wafer with its focal point set to a position above the break lines in the inside of the wafer; and a dividing step for dividing the wafer into individual chips along the deteriorated layers of the wafer by exerting external force to the wafer having the deteriorated layers formed therein.
    • 一种分割具有多个装置的晶片的方法,所述晶片形成在由正面上的格子图案形成的街道划分的多个区域中,并且测试形成在街道上的金属图案,包括:金属图案断裂步骤 用于通过将其焦点设置在靠近测试金属图案的位置向晶片的后表面施加具有渗透性的脉冲激光束,从而在测试金属图案中形成断裂线; 劣化层形成步骤,用于通过将具有渗透性的脉冲激光束施加到晶片的后表面,使其焦点设置在晶片的上方,沿着晶片内部的断裂线上方的街道形成劣化层 晶片内部的断裂线; 以及分割步骤,通过向其中形成有劣化层的晶片施加外力,将晶片分割成沿晶片的劣化层的各个芯片。
    • 8. 发明申请
    • Wafer processing method
    • 晶圆加工方法
    • US20050282359A1
    • 2005-12-22
    • US11151526
    • 2005-06-14
    • Yusuke NagaiSatoshi KobayashiMasaru Nakamura
    • Yusuke NagaiSatoshi KobayashiMasaru Nakamura
    • B23K26/40B28D5/00H01L21/30H01L21/304H01L21/78
    • H01L21/304B23K26/40B23K26/53B23K2101/40B23K2103/50B28D5/0011H01L21/78H01L2221/6834
    • A wafer processing method for dividing a wafer having function elements in area sectioned by dividing lines formed on the front surface in a lattice pattern into individual chips along the dividing lines, comprising a deteriorated layer forming step for forming a deteriorated layer on the side of the back surface of a position at a distance corresponding to the final thickness of the chip from the front surface of the wafer by applying a laser beam capable of passing through the wafer along the dividing lines from the back surface of the wafer; a dividing step for dividing the wafer into individual chips along the dividing lines by applying external force to the wafer in which the deteriorated layer has been formed along the dividing lines; and a back surface grinding step for grinding the back surface of the wafer divided into individual chips to the final thickness of the chip.
    • 一种晶片处理方法,其特征在于,将沿着划分线将在前表面上形成的划分线的划分线的区域的功能元件分割为各个芯片,所述晶片处理方法包括在劣化层形成步骤中形成劣化层 通过施加能够从晶片的背面沿着划分线穿过晶片的激光束,从与晶片的前表面相对应的与芯片的最终厚度相对应的距离的位置的背面; 分割步骤,通过沿着分割线向已经形成有劣化层的晶片施加外力,沿着分割线将晶片分割成单个芯片; 以及后表面研磨步骤,用于将分成单个芯片的晶片的背面研磨至芯片的最终厚度。